臺灣博碩士論文加值系統

本論文分成兩個部分介紹，第一個部分是利用柱狀共振技術量測(1-x)TiO2-xCaTiO3陶瓷材料於不同摻雜比例下之微波介電特性，第二個部分是探討(1-x)TiO2-xCaTiO3薄膜在不同氣體濃度濺鍍下之微波介電特性。
塊體樣品是以固態反應法製作，以二氧化鈦(TiO2)為主體材料摻雜不同比例的鈦酸鈣(CaTiO3)。固定煆燒溫度為 1200℃下分別以燒結溫度為 1200℃及 1300℃製備碟狀樣品。
在1200℃的燒結溫度下，陶瓷體隨著 CaTiO3的摻雜量增加，相對密度有先下降後上升之趨勢，而在燒結溫度為1300℃下陶瓷體隨著CaTiO3的摻雜量增加，相對密度有先上升後飽和之趨勢。並於摻雜 x=0.075及燒結溫度 1300℃時有最高之相對密度，而最大之介電係數出現在摻雜x=0.05及燒結溫度為1300℃。
薄膜樣品是以反應性射頻磁控濺鍍法製備(1-x)TiO2-xCaTiO3 (x=0.075)薄膜。在濺鍍功率、濺鍍壓力、濺鍍時間及基板加熱溫度都固定下，改變通入氣體的氬氣(Ar)和氧(O2)之比例下製備，並以網路分析儀透過共振腔擾動技術量測在不同氣體比例下薄膜樣品的微波介電特性。

This thesis is divided into two parts. The first part adopts the post resonance technology to measure the microwave dielectric properties of (1-x)TiO2-xCaTiO3 ceramic materials at different doping ratios. The second part explores the microwave dielectric properties of (1-x)TiO2-xCaTiO3 films grown under different gas concentrations by sputtering deposition method.
The bulk samples were prepared using solid-state reaction method, where different ratios of CaTiO3 were doped into TiO2 as the main material. With 1200°C calcination temperature, samples were fabricated with the sintering temperatures 1200°C and 1300°C. The relative density of ceramic samples with sintering temperature 1200℃ decreases at first and then increases with increasing samples CaTiO3 doping amount, while the relative density of ceramic samples with sintering temperature 1300℃ increases with increasing CaTiO3 doping amount. The highest relative density exists with doping concentration x=0.075 and sintering temperature 1300 ℃.
The film samples of (1-x)TiO2-xCaTiO3 were prepared using reactive radio frequency magnetron sputtering method. The microwave dielectric properties at different gas ratios were measured using a network analyzer through the cavity perturbation technique. While the sputtering power, pressure, time, and substrate heating temperature were kept constant, the ratio of Ar and O2 gases were varied during the deposition process.

摘要...i
Abstract...ii
誌謝...iv
目錄...v
表目錄...vii
圖目錄...viii
第一章 緒論...1
1-1 前言...1
1-2 研究背景與動機...1
1-3 論文架構簡介...2
第二章 基礎理論...3
2-1 介電理論...3
2-1-1 介電損耗...3
2-1-2 極化現象...3
2-2 品質因數...4
2-3 介電共振器...5
2-4 介電共振模態及理論...6
2-5 微波測量技術...12
2-5-1 柱狀共振技術...12
2-5-2 共振腔擾動技術...14
2-6 塊體製作...16
2-6-1 固態反應法...16
2-6-2 固態反應法之優缺點...17
2-7 燒結機構...17
2-8 薄膜製作...18
2-8-1 物理氣相沉積（PVD）的優缺點...18
2-8-1 化學氣相沉積（CVD）的優缺點...18
2-9薄膜濺鍍...19
2-9-1 電漿理論...19
2-9-2 反應性射頻磁控濺鍍...20
2-9-3 薄膜成長機制...20
第三章 實驗方法...22
3-1陶瓷粉末介紹...22
3-1-1 主體材料(二氧化鈦 TiO2)...22
3-1-2 摻雜材料(鈦酸鈣 CaTiO3)...26
3-2 (1-x)TiO2-xCaTiO3(x=0~0.1)塊體樣品製作...27
3-2-1 塊體樣品實驗介紹...27
3-2-2 塊體樣品製備流程...27
3-2-3 塊體樣品介電量測分析...28
3-3 (1-x)TiO2-xCaTiO3(x=0.075)薄膜樣品製作...30
3-3-1 薄膜樣品實驗方法...30
3-3-2 粉靶製作...30
3-3-3 基板清洗...30
3-3-4 薄膜沉積...31
3-3-5 定義共振頻率...33
3-3-6 樣品校正...35
3-3-7 薄膜介電測量分析...35
3-4結構分析與特性量測...35
3-4-1 密度、孔隙率量測...35
3-4-2 網路分析儀...36
3-4-3 X光繞射分析...37
3-4-4 超高解析熱電子型場發射掃描式電子顯微鏡(FE-SEM)...39
第四章 結果與討論...40
4-1不同燒結溫度對(1-x)TiO2-xCaTiO3 (x=0~0.1)塊體樣品特性之影響...40
4-1-1 XRD分析...40
4-1-2 塊體相對密度與孔隙率分析...42
4-1-3 塊體介電特性分析...44
4-1-4 小結...45
4-2基板加熱在不同氣體比例對(1-x)TiO2-xCaTiO3(x=0.075)薄膜樣品特性之影響...45
4-2-1 XRD分析...45
4-2-2 SEM分析...47
4-2-3 薄膜介電特性分析...51
4-2-4 小結...68
第五章 結論及未來研究...69
5-1 (1-x)TiO2-xCaTiO3(x=0~0.1)塊體樣品之結論...69
5-2 (1-x)TiO2-xCaTiO3(x=0.075)薄膜樣品之結論...69
5-3未來研究...70
參考文獻 ...71

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