本論文研究探討藉由氧化鉬及氧化鎳堆疊電洞性選擇接觸層增強單晶矽太陽能電池光電特性研究，由於氧化鉬具備高功函數與較寬的能隙等特性，所以與矽接觸時能使能帶彎曲，因為MoOx與矽接觸無法完全阻擋電子通過，但有助於電洞傳輸，另一方面，氧化鎳具有較大的傳導帶偏移，能夠有效阻擋電子，但氧化鎳與矽接觸會產生少數載子生命週期過低，導致光電轉換效率不佳，因此在氧化鎳與矽中間加一層MoOx緩衝層，可改善元件的效率轉換特性。故本研究將氧化鉬當成緩衝層而氧化鎳當成阻擋層，探討的參數有氧化鉬/氧化鎳堆疊層中氧化鎳厚度效應、氧化鎳置入氧化鉬中不同位置和厚度效應、氧化鉬/氧化鎳堆疊層數效應和氧化鉬與氧化鎳共蒸形成氧化鉬鎳不同厚度效應。
實驗結果顯示，當二氧化鉬與氧化鎳堆疊層層數為1層的條件下，元件有較高的光電轉換效率，和只有二氧化鉬的元件相比，具有MoO2/NiO堆疊層的元件有較高的光電轉換效率，且增加了0.74 %。由實驗結果可得知，元件光電轉換效率會受到兩種電洞選擇性接觸層的厚度太薄或太厚影響，電洞性選擇接觸層堆疊層數越少，元件光電轉換效率會越高，而二氧化鉬與氧化鎳共蒸的效果並不佳。最終結果顯示，當二氧化鉬厚度為6 nm堆疊氧化鎳厚度為1.5 nm，堆疊層數為1層時，有最佳平均光電轉換效率為21.27 %、開路電壓為653 mV、短路電流密度為40.08 mA/cm2、填充因子為81.28 %、串聯電阻為1.55 Ω-cm2。

Enhanced photovoltaic characteristics of monocrystalline silicon solar cells (MSSCs) with molybdenum oxide (MoOx) and nickel oxide (NiOx) stacked hole-selective contact layers (HSCLs) were investigated. The band energy can be bended when MoOx is in contact with silicon due to the MoOx with high work function and wide energy gap. However, the contact between MoOx and silicon cannot completely block the passage of electrons. Thus, the hole transport was enhanced by MoOx and NiOx. On the other hand, NiOx with a large conduction band shift can be effectively block electrons. However, a poor minority carrier lifetime was achieved by the contact between NiOx and silicon, resulting in poor conversion efficiency (CE). Therefore, the CE characteristics of the MSSCs can be improved by adding a layer of MoOx buffer layer between NiOx and silicon. Therefore, in this thesis, MoOx and NiOx were used as a buffer layer and barrier layer, respectively. The parameters, including the thickness effects of NiOx in the MoOx/NiOx stacked layer, the effects of different positions and thicknesses of NiOx in the MoOx, the effects of the number of MoOx/NiOx stacked layers, and the co-evaporation of MoOx and NiOx to form MoNiOx thickness effects, were demonstrated.
The experimental results show that the MSSC with a high CE was demonstrated under the number of MoO2/NiO stacked layers at one. Compared with the MSSC with MoO2 only, the CE increase of 0.74% was demonstrated by the MSSC with MoO2/NiO stacked layer. The results indicate that the CE of MSSC will be affected by the thickness of the two HSCLs being too thin or too thick. The higher CE of MSSC was achieved by the fewer HSCL stack layers. Moreover, the co-evaporation effect of MoO2 and NiO was not good. The result shows that the MSSC with the CE of 21.27 %, Voc of 653 mV, Jsc of 40.08 mA/cm2, fill factor of 81.28 %, series resistance of 1.55 Ω-cm2, was presented by the MoO2 of 6 nm, the NiO of 1.5 nm, and the stacked layers number of 1 layer.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vii
圖目錄...viii
第一章 緒論...1
1.1過渡金屬氧化物電洞傳輸層應用於太陽能電池之文獻回顧...1
1.2氧化鉬應用於光電元件和與矽接觸影響之文獻回顧...1
1.3氧化鎳應用於光電元件和與矽接觸影響之文獻回顧...3
1.4研究動機...4
1.5論文架構...4
第二章 實驗流程與特性量測...5
2.1沉積氧化鉬及氧化鎳堆疊電洞性選擇接觸層之前段實驗流程...5
2.1.1清理矽基板表面及去除自然氧化層...5
2.1.2使用氫氧化鉀混和液對矽基板表面進行糙化...6
2.1.3使用高溫爐管進行磷擴散形成n+射極層...6
2.1.4使用氫氟酸混和液去除磷玻璃及邊緣隔絕...6
2.1.5使用電漿化學氣相沉積法沉積氮化矽抗反射層在矽基板正面...6
2.1.6使用銀膠網印在矽晶片正面的氮化矽上後烤乾並形成銀電極...6
2.1.7使用燒結爐讓銀電極燒結並刺穿氮化矽...7
2.1.8使用雷射切割機使片子切割成2×2 cm2的大小...7
2.1.9旋塗兩層抗蝕刻膠於矽晶片正面並加熱烤乾...7
2.1.10泡氫氟酸去除矽晶片背面的氧化物...7
2.2蒸鍍不同厚度的二氧化鉬對太陽能電池元件的影響...7
2.2.1蒸鍍不同厚度的二氧化鉬對太陽能電池元件的影響...7
2.2.2蒸鍍銀當作太陽能電池元件的電極...7
2.3蒸鍍不同厚度的氧化鎳對太陽能電池元件的影響...8
2.3.1蒸鍍不同厚度的氧化鎳對太陽能電池元件的影響...8
2.3.2蒸鍍銀當作太陽能電池元件的電極...8
2.4氧化鎳與二氧化鉬破真空對太陽能電池元件的影響...8
2.4.1氧化鎳與二氧化鉬破真空對太陽能電池元件的影響...8
2.4.2蒸鍍銀當作太陽能電池元件的電極...9
2.5二氧化鉬/氧化鎳堆疊層中的氧化鎳厚度對太陽能電池元件的影響...9
2.5.1二氧化鉬/氧化鎳堆疊層中的氧化鎳厚度對太陽能電池元件的影響...9
2.5.2蒸鍍銀當作太陽能電池元件的電極...9
2.6固定二氧化鉬及氧化鎳總厚度將氧化鎳置入二氧化鉬不同位置效應...9
2.6.1固定二氧化鉬及氧化鎳總厚度將氧化鎳置入二氧化鉬不同位置效應...10
2.6.2蒸鍍銀當作太陽能電池元件的電極...10
2.7改變二氧化鉬及氧化鎳總厚度將氧化鎳置入二氧化鉬不同位置效應...10
2.7.1改變二氧化鉬及氧化鎳總厚度將氧化鎳置入二氧化鉬不同位置效應...10
2.7.2蒸鍍銀當作太陽能電池元件的電極...11
2.8改變二氧化鉬/氧化鎳堆疊層數對太陽能電池元件的影響...11
2.8.1改變二氧化鉬/氧化鎳堆疊層數對太陽能電池元件的影響...11
2.8.2蒸鍍銀當作太陽能電池元件的電極...12
2.9二氧化鉬與氧化鎳共蒸形成之氧化鉬鎳厚度效應...12
2.9.1二氧化鉬與氧化鎳共蒸形成之氧化鉬鎳厚度效應...12
2.9.2蒸鍍銀當作太陽能電池元件的電極...12
2.10太陽能光伏元件的電性量測...12
2.10.1電流-電壓量測...12
第三章 藉由氧化鉬及氧化鎳堆疊電洞選擇性接觸層增強單晶矽太陽能電池光電特性研究...30
3.1蒸鍍氧化鉬厚度效應之電流-電壓量測分析...30
3.1.1結論...30
3.2蒸鍍氧化鎳厚度效應電流-電壓量測分析...31
3.2.1結論...31
3.3探討氧化鎳與氧化鉬破真空影響之電流-電壓量測分析...31
3.3.1結論...32
3.4探討二氧化鉬/氧化鎳堆疊層中的氧化鎳厚度效應之電流-電壓量測分析...32
3.4.1結論...33
3.5在二氧化鉬及氧化鎳總厚度為7.5 nm時，探討氧化鎳置入二氧化鉬中不同位置效應之電流-電壓量測分析...33
3.5.1結論...34
3.6在二氧化鉬及氧化鎳總厚度改變下，探討氧化鎳置入二氧化鉬中不同位置效應之電流-電壓量測分析...34
3.6.1結論...35
3.7探討二氧化鉬/氧化鎳堆疊層數效應之電流-電壓量測分析...35
3.7.1結論...36
3.8 氧化鉬與氧化鎳共蒸形成之氧化鉬鎳厚度效應之電流-電壓量測分析...36
3.8.1結論...37
第四章 總結論與未來展望...61
4.1 總結論...61
4.2 未來展望...61
參考文獻...62
Extended Abstract...65
Abstract...65
Introduction...66
Experimental...66
Results and Discussion...67
Conclusions...67
References...67

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