臺灣博碩士論文加值系統

本論文使用液相沉積法在成長溫度為90度的條件下，以硫酸銅溶液做為銅源材料，而氧源材料則為氫氧化鈉溶液，並加入葡萄糖粉末做為還原劑，成長的氧化亞銅（Cu2O）薄膜。利用X射線繞射儀(XRD)、場發掃描式電子顯微鏡(SEM)、能量色散X-射線光譜(EDX)、紫外線-可見光-紅外線光譜儀、原子力顯微鏡(AFM)及霍爾量測系統去分析不同莫耳數之硫酸銅及氫氧化鈉所成長氧化亞銅薄膜特性。在氫氧化鈉溶液莫耳數為40毫莫耳配上硫酸銅溶液為20毫莫耳的條件下有較強的XRD頻譜，由EDX分析發現當氫氧化鈉莫耳數增加會使氧化亞銅薄膜中的銅的原子百分率降低，由AFM量測發現在此條件下的氧化亞銅薄膜較為平坦，較適合作為太陽能電池，由霍爾量測的觀察在此條件下呈現N型導電特性。在氫氧化鈉溶液莫耳數為40毫莫耳配上硫酸銅溶液莫耳數為25毫莫耳的條件下，從AFM及霍爾量測觀察下，粗糙度相對的小，並且呈現P型導電特性。

In this thesis, we used liquid phase deposition method to grow cuprous oxide (Cu2O) thin films at deposition temperature of 90 oC. The treatment solution includes copper sulfate, sodium hydroxide, and glucose (reduction). The crystalline structure, content of elements, surface morphology, optical and electrical properties were measured by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), scan electron microscope (SEM),atomic force microscope (AFM), transmitted measurement, and hall measurement. A strongest preferential XRD spectrum of Cu2O thin film deposited at the treatment solution of 40 x10-3 mole sodium hydroxide and 20 x10-3 mole copper sulfide as comparing to those of treatment solutions with varied mole number of sodium hydroxide. The EDX analysis exhibits that the content of copper decreases with increasing the mole number of sodium hydroxide. The hall measurement shows a n-type conduction for Cu2O film under this deposition condition. As mole number of copper sulfate reduced to 25 x10-3 mole, while the sodium hydroxide maintained 40 x10-3 mole, The hall measurement represents a p-type conduction for Cu2O thin film.

摘要……………………………………………………………………….i
英文摘要………………………………………………………………ii
誌謝…………………………………………………………………………iii
目錄…………………………………………………………………………iv
表目錄………………………………………………………………vi
圖目錄………………………………………………………vii
第一章 導論…………………………………………………………………….1
1.1 前言……………………………………………………… 1
1.2 簡介……………………………………………………… 2
1.2.1氧化亞銅特性……………………………………………………… 2
1.2.2文獻探討……………………………………………………… 3
1.3 研究動機……………………………………………………… 4
第二章 實驗流程……………………………………………………… 5
2.1 實驗流程……………………………………………………… 5
2.2 量測分析……………………………………………………… 6
2.2.1 α-step膜厚量測儀……………………………………………………… 6
2.2.2霍爾量測原理與量測……………………………………………………… 7
2.2.3 X射線繞射儀(X-ray diffraction，XRD)……………………………………………………… 8
2.2.4紫外線-可見光-紅外線光譜儀(UV-Vis Spectrum)……………………………………………………… 9
2.2.5場發掃描式電子顯微鏡(FE-SEM)……………………………………………………… 9
2.2.6能量色散X-射線光譜(EDX)……………………………………………………… 9
第三章 實驗結果與討論……………………………………………………… 10
3.1氧化亞銅薄膜在硫酸銅12.5毫莫耳下不同氫氧化鈉莫耳數的分析…………………………………………… 10
3.1.1氧化亞銅薄膜在硫酸銅12.5毫莫耳下不同氫氧化鈉莫耳數的XRD分析……………………………………………………………………………….10
3.1.2氧化亞銅薄膜在硫酸銅12.5毫莫耳下不同氫氧化鈉莫耳數的EDX分析……………………………………………………………………………….11
3.1.3氧化亞銅薄膜在硫酸銅12.5毫莫耳下不同氫氧化鈉莫耳數的SEM、晶粒尺寸及(111)峰值分析……………………………………………………….12
3.1.4氧化亞銅薄膜在硫酸銅12.5毫莫耳下不同氫氧化鈉莫耳數霍爾分析……………………………………………………………………………….13
3.2氧化亞銅薄膜在硫酸銅20毫莫耳下不同氫氧化鈉莫耳數的分析 14
3.2.1氧化亞銅薄膜在硫酸銅20毫莫耳下不同氫氧化鈉莫耳數的XRD分析……………………………………………………………………………….14
3.2.2氧化亞銅薄膜在硫酸銅20毫莫耳下不同氫氧化鈉莫耳數的EDX分析……………………………………………………………………………….15
3.2.3氧化亞銅薄膜在硫酸銅20毫莫耳下不同氫氧化鈉莫耳數的SEM、晶粒尺寸及(111)峰值分析……………………………………………………….17
3.2.4氧化亞銅薄膜在硫酸銅20毫莫耳下不同氫氧化鈉莫耳數霍爾分析……………………………………………………………………………….18
3.3氧化亞銅薄膜在硫酸銅25毫莫耳下不同氫氧化鈉莫耳數的分析 18
3.3.1氧化亞銅薄膜在硫酸銅25毫莫耳下不同氫氧化鈉莫耳數的XRD分析……………………………………………………………………………….18
3.3.2氧化亞銅薄膜在硫酸銅25毫莫耳下不同氫氧化鈉莫耳數的EDX分析……………………………………………………………………………….20
3.3.3氧化亞銅薄膜在硫酸銅25毫莫耳下不同氫氧化鈉莫耳數的SEM、晶粒尺寸及(111)峰值分析……………………………………………………….21
3.3.4氧化亞銅薄膜在硫酸銅25毫莫耳下不同氫氧化鈉莫耳數霍爾分析……………………………………………………………………………….22
3.4氧化亞銅薄膜成長速率及表面粗糙度分析…..………………………….22
第四章 結論……………………………………………………… 24
參考文獻……………………………………………………… 25
Extended Abstract……………………………………………………… 27

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