臺灣博碩士論文加值系統

隨著半導體科技的進步，銅金屬化製程在高深寬比的積體電路連導線中由於電子平均自由路徑較低，在奈米化連導線將造成電阻過高而不敷使用，故必須找尋新的材料來代替。而傳統的濺鍍技術也無法填充高深寬比之圖案化基板，本實驗利用全濕式電化學製程來沉積鈷及鈷磷薄膜，以其應用於奈米級之積體電路連導線製程。
本研究以Ni及NiSi薄膜做為本實驗之基板，再以電化學共沉積法製備Co及Co(P) 薄膜。藉由改變溶液中H3BO3含量可與改變電化學溶液之pH值得到最佳的沉積參數，再藉由添加NaH2PO2達到在Co薄膜中摻雜微量P之Co(P) 薄膜。將製備Co及Co(P) 薄膜進行四點探針量測片電阻、掃描式電子顯微鏡觀察表面及截面形貌、能量散步光譜儀進行定性分析、X-ray繞射儀進行結構分析、感應耦合電漿質譜儀進行定量分析、原子力顯微鏡量測薄膜表面粗糙度。
由上述的實驗結果可得知，Ni基板上以-1.5 V的沉積電位在 10 mM CoSO4 之電鍍溶液中加入 3 mM H3BO3的Co薄膜，電阻率為14.8 μΩ-cm與晶粒尺寸26.2 nm；NiSi基板上以-1.5 V的沉積電位在10 mM CoSO4 之電鍍溶液中加入5 mM H3BO3的Co薄膜電阻率為24.3 μΩ-cm與晶粒尺寸36.9 nm。由於Co薄膜在-1.5 V時擁有最好的薄膜性質，故發現Co(P)薄膜在-1.5 V之沉積電位下在Ni基板上電阻率為23.6 μΩ-cm與晶粒尺寸24.6 nm；在NiSi基板上電阻率為29.4 μΩ-cm與晶粒尺寸22.3 nm。在兩種基板上沉積Co(P)在-1.5 V可以有最佳的薄膜性質，並可藉由改變沉積電位來控制P在Co薄膜中的摻雜量在0.2 at% ~ 2.45 at%。
最後將本實驗所得到的最佳沉積參數，以圖案化的溝槽試片進行沉積，並可證明全濕式鈷製程的填充能力。

Copper (Cu) has been used as the interconnects material in microelectronics. The interconnects are currently fabricated by damascene process which contains both of vacuum and wet chemical deposition processes. However, for a sub-5-nm technology node, applying Cu is highly problematic because the nano-sized interconnects will increase the grain boundary and surface scattering, during electron transporotation. Cobalt (Co) is a promisiy material to replace Cu as the interconnect material in middle of the line when the feature size of the devices shrinks.
In this work, NiSi/Si was used as a substrate for the electrochemical deposition of Co and Co(P) thin films. The electrical properties of the films were examined by Four Point Probe, the surface images were examined by Field Emission-Scanning Electron Microscope, the concentration of the P was detected by Inductively Couple Plasma Mass Spectrometry, roughness of the films was analyzed by Atomic Force Microscope, and structural changes of the films were examined by X-ray Diffraction.
The result shows that the optinuin deposition potential of Co was -1.5 V. H3BO3 is essential on the deposition both for the Co and Co(P) films. Based on the parameters of Co electrochemical deposition, Co(P) can be deposited by the addition of NaH2PO2. The concentration of the Co(P) examined by ICP-MS reveals that the P concentration increased with the deposition potential ranging from 0.2 at% to 2.45 at%, respectively. The studied Co(P) film has Co(002) (2θ = 44.3o, JCPDS 89-7373) preferred orientation.
Finally, we deposited the films on a pattern substrate that had the high aspect ratio (100 nm – 20 nm). The result to confirmed that the used in this study can employ in the fabrication of Co interconnects.

摘要.................................................... i
Abstract...............................................iii
誌謝.....................................................v
目錄....................................................vi
表目錄.................................................viii
圖目錄..................................................ix
第一章 緒論..............................................1
1.1 前言................................................1
1.2 研究動機.............................................3
第二章 理論基礎與文獻回顧...................................7
2.1 半導體連導線製程......................................7
2.2 物理氣相沉積 (Physical Vapor Deposition, PVD)........9
2.2.1 濺鍍系統 (Sputtering System)......................9
2.3 電化學沉積原理.......................................12
2.3.1 循環伏安法 (Cyclic Voltammetry, CV)...............12
2.3.2 極化曲線 (Polarization Curve).....................13
2.3.3 電鍍添加劑........................................14
2.4 電化學沉積系統 (Electrochemical Deposition, ECD).....16
2.5 電鍍液pH值對電沉積之影響..............................17
2.6 旋轉電極 (Rotation Disk Electrode, RDE).............18
2.7 鈷金屬 (Cobalt, Co)................................19
2.8 鈷合金.............................................20
第三章 實驗材料、流程與儀器介紹............................26
3.1 實驗材料...........................................26
3.1.1 實驗基板.........................................26
3.1.2 濺鍍靶材.........................................26
3.1.3 製程氣體.........................................26
3.1.4 電化學製程藥品....................................26
3.2 實驗設備...........................................28
3.2.1 磁控濺鍍系統......................................28
3.2.2 pH測定計 (pH meter)..............................28
3.2.3 三極式電化學沉積系統與旋轉電極.......................28
3.2.4 熱處理系統 (Annealing System).....................29
3.3 實驗流程............................................30
3.3.1 試片前處理........................................30
3.3.2 製備鎳 (Ni) 及鎳矽 (NiSi) 基板.....................30
3.3.3 電化學溶液配置.....................................31
3.3.4 電化學製備金屬薄膜..................................31
3.4 分析儀器介紹及原理....................................33
3.4.1 四點探針 (Four-Point Probe, FPP)...................33
3.4.2 X光繞射分析儀 (X-ray Diffraction, XRD)..............33
3.4.3 掃描式電子顯微鏡 (Scanning Electron Microscope, SEM)....34
3.4.4 場發射掃描式電子顯微鏡 (Filed Emission Scanning Electron Microscope, FE-SEM)...35
3.4.5 感應耦合電漿質譜儀 (Inductivity Coupled Plasma Mass Spectrometry, ICP-MS)....36
3.4.6 原子力顯微鏡 (Atomic Force Microscope, AFM).......36
3.4.7 X光光電子能譜儀 (X-ray photoelectron spectroscopy, XPS).......37
3.4.8 穿透式電子顯微鏡 (Transmission Electron Microscope, TEM).......37
第四章 實驗結果與討論........................................51
4.1 鎳及鎳矽基板製作........................................51
4.1.1 鎳基板..............................................51
4.1.2 鎳矽基板............................................51
4.2 Ni基板上電化學沉積Co薄膜特性.............................53
4.2.1 添加不同濃度H3BO3之薄膜特性探討........................53
4.2.2 改變電鍍溶液pH值之薄膜特性.............................57
4.3 NiSi基板上電化學沉積純Co薄膜特性.........................61
4.3.1 添加不同濃度硼酸之薄膜特性探討.........................61
4.3.2 改變電鍍溶液pH值之薄膜特性............................64
4.4 Ni基板上電化學沉積Co(P) 薄膜特性........................65
4.4.1 添加不同濃度NaH2PO2 之薄膜特性探討....................65
4.5 NiSi基板上電化學沉積Co(P)薄膜特性.......................69
4.5.1 添加不同濃度NaH2PO2之薄膜特性探討.....................69
4.6 使用旋轉電極之Co薄膜性質分析............................75
4.7 不同基板之薄膜比較.....................................76
4.7.1 Co薄膜在不同基板沉積之差異比較.........................76
4.7.2 Co(P) 薄膜在不同基板沉積之差異比較.....................77
4.8 Co(P) 薄膜在圖案化基板上之特性探討.......................80
第五章 結論..............................................142
參考文獻.................................................144
Extended Abstract.......................................157

[1]International Roadmap for Devices and System, (2018) 5-17.
[2]Y. L. Chin, B. S. Chiou, Effects of underlayer dielectric on the thermal characteristics and electromigration resistance of copper interconnect, J. Appl. Phys. , 42 (2003) 7502-7509.
[3]S. Sharma, M. Kumar, S. Rani, D. Kumar, Deposition and characterization of 3-aminopropyltrimethoxysilane monolayer diffusion barrier for copper metallization, J. Matt. Res. , 10 (2014) 11663.
[4]H. J. Lee, T. E. Hong, S. H. Kim, Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects, J. Alloys Compd. , 686 (2016) 1025-1031.
[5]M. Lapedus, What Will Replace Dual Damascene?, Semiconductor Engineering, Jan. 2013.
[6]Y. L. Jiang, G. P. Ru, X. P. Qu, B. Z. Li, X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions, Appl. Surf. Sci. , 256 (2009) 698-701.
[7]G. Utlu, N. Artunc, S. Budak, S. Tari, Structural and electrical characterization of the nickel silicide films formed at 850oC by rapid thermal annealing of the Ni/Si(100) films, Appl. Surf. Sci. , 256 (2010) 5069-5075.
[8]P. L. Tam, Y. Cao, U. Jelvestam, L. Nyborg, Corrosion properties of thermally annealed and co-sputtered nickel silicide thin films, Surf. Coat. Technol. , 206 (2011) 1160-1167.
[9]R. Tomita, H. Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tomizawa, Y. Kunimune, H. Nakamura, M. Moritoki, H. Iwai, Formation of high resistivity phases of nickel silicide at small area, Microelectronics Reliability, 53 (2013) 659-664.
[10]G. Tellouche, A. Derafa, K. Hoummada, D. Mangelinck, Reaction paths of Ni rich phases: Effect of Ni thickness, Vacuum, 141 (2017) 259-264.
[11]W. Volksen, R. D. Miller, G. Dubois, Low dielectric constant materials, Chem. Rev. , 110 (2010) 56-110.
[12]L. Chen, D. Ando, Y. Sutou, D. Gall, J. Koike, NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node, Appl. Phys. Lett. , 113 (2018) 183503.
[13]D. Gall, Electron mean free path in elemental metals, J. Appl. Phys. , 119 (2016) 085101.
[14]S. Dutta, S. Beyne, A. Gupta, S. Kundu, H. Bender, S. V. Elshocht, G. Jamieson, W. Vandervorst, J. Bommels, C. J. Wiiiison, Z. Tokei, C. J. Adelmann, Sub-100 nm2 cobalt Interconnects, IEEE Electron Device Lett. , 39 (2018) 731-734.
[15]K. Barmak, X. Liu, A. Darbal, N. T. Nuher, D. Choi, T. Sun, A. P. Warren, K. R. Coffey, M. F. Toney, On twin density and resistivity of nanometric Cu thin films, J. Appl. Phys. , 120 (2016) 065106.
[16]R. Saeki, T. Ohgai, Determination of cathode current efficiency for electrodeposition of ferromagnetic cobalt nanowire arrays in nanochannels with extremely large aspect ratio, Results Phys. , 15 (2019) 102658.
[17]S. P. Murarka, Multilevel interconnections for ULSI and GSI era, Mater. Sci. Eng. , R19 (1997) 87-151.
[18]O. V. Pedreira, K. Croes, A. Lesniewska, C. Wu, M. H. Veen, J. Messemaeker, K. Vandermissen, N. Jourdan, L.G. Wen, C. Adelmann, B. Briggs, V. V. Gonzalez, J. Bommels, Z. Tokei, Reliability study on cobalt and ruthenium as alternative metals for advanced interconnects, IEEE, 6B (2018) 21-28.
[19]F. Griggio, J. Palmer, F. Pan, N. Toledo, A. Schmitz, R. Kasim, G. Leatherman, J. Hicks, A. Madhavan, J. Shin, J. Steigerwald, A. Yeoh, C. Auth, Reliability of dual-damascene local interconnects feauring cobalt on 10 nm logic technology, IEEE, 6E (2018) 31-35.
[20]E. Gomez, A. Labarta, A. Llorente, E. Valles, Electrodeposited cobalt + copper thin film on ITO Substrata, J. Electroanal. Chem. , 517 (2001) 63-68.
[21]C. J. Liu, J. S. Chen, Influence of Zr additives on the microstructure and oxidation resistance of Cu(Zr) thin films, Mater. Res. Soc. , 20 (2005) 496-503.
[22]J. S. Fang, Y. S. Liu, T. S. Chin, Atomic layer deposition of copper and copper silver films using an electrochemical process, Thin Solid Films, 580 (2015) 1-5.
[23]L. C. K. Liua, T. Y. Tung, Fabrication of compositions of Cu-Cu2O crystal films by electrochemical deposition with potential pulse settings, Electrochim. Acta, 282 (2018) 395-401.
[24]L. Caillard, J. Vignreon, M. Thiam, A. Lakhdari, F. Raynal, and A. Etcheberry, Investigation of Cu/TaN and Co/TaN Barrier-Seed Oxidation by Acidic and Alkaline Copper Electroplating Chemistry for Damascene Applications, J. Electrochem. Soc. , 165 (2018) D439-D443.
[25]K. Venkatramam, R. Gusley, A. Lesak, and R. Akolkar, Electrochemistry-enabled atomic layer deposition of copper: Investigation of the deposit growth rate roughness, J. Vac. Sci. Technol. , A37 (2019) 020901.
[26]J. S. Fang, T. F. Sie, Y. L. Cheng, G. S. Chen, A new alternative Electrochemical process for a pre-deposited UPD-Mn mediated the growth of Cu(Mn) film by controlling the time during the Cu-SLRR, Coatings, 10 (2020) 1-13.
[27]W. Volksen, R. D. Miller, G. Dubois, Low Dielectric Constant Materials, Chem. Rev. , 110 (2010) 56-110.
[28]J. C. Chuang, S. L. Tu, M. C. Chen, Sputter-deposited Mo and reactively sputter-deposited Mo-N films as barrier layer against Cu diffusion, Thin Solid Films, 346 (1999) 299-306.
[29]Y. Liu, S. Song, D. Mac, H. Ling, M. Li, Diffusion barrier performance of reactively sputtered Ta-W-N between Cu and Si, Microelectron. Eng. , 75 (2004) 309-315.
[30]Y. Wang, B. H. Tang, F. Y. Li, The properties of self-formed diffusion barrier layer in Cu(Cr) alloy, Vacuum, 126 (2016) 51-54.
[31]M. Wu, S. Yu, Y. Sun, L. Ge, Highly performance of flexible transparent conductive Cu-based ZnO multilayer thin films via BS barrier layer, Ceram. Int. , 44 (2018) 14318-14322.
[32]Y. B. Ou, T. L. Yang, W. C. Wu, B. T. Chen, K. Y. Lee H. L. Huang, P. Pang, E. Chen, K. C. Liu, M. Liao, H. Ku, Study of interface micro-voids between sputter Cu & plating Cu : the role of photoresist, IEEE, 114 (2018) 735-740.
[33]S. Esmaeili, K. Lilienthal, N. Nagy, L. Gerlich, R. Krause, B. Uklig, Co-MOCVD processed seed layer for through silicon via copper metallization, Microelectron. Eng. , 211 (2019) 55-59.
[34]Y. Oh, E. J. Kim, Y. Kim, K. Cuoi, W. B. Han, H. S. Kim, C. S. Yoon, Adhesion of sputter-deposited Cu/Ti film on plasma- treated polymer substrate, Thin Solid Films, 600 (2016) 90-97.
[35]J. Weichart, J. Weichart, A. Erhart, K. Viehweger, Preconditioning Technologies for sputtered seed layers in FOPLP, IEEE, 282 (2019) 1833-1842.
[36]M. Wislicenus, R. Liske, L. Gerlich, B. Vasilev, A. Preusse, Cobalt advanced barrier metallization: A resistivity composition analysis, Microelectron. Eng. , 137 (2015) 11-15.
[37]M. Hosseini, D. Ando, Y. Sutou, J. Koike, Co and CoTix for contact plug and barrier layer in integrated circuits, Microelectron. Eng. , 189 (2018) 78-84.
[38]W. Kozlowski, J. Balcerski, W. Szmaja, I. Piwonski, D. Batory, E. Miekos, M. Cichomski, Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates, J. Magn. Magn. Mater. , 426 (2017) 107-113.
[39]S. M. Thalluri, B. Wei, K. Welter, R. Thomas, V. Smirnov, L. Qiao, Z. Wang, F. Finger, L. Liu, Inverted pyramid textured p-silicon covered with Co2P as an efficient and stable solar hydrogen evolution photocathode, Am. Chem. Soc. , 4 (2019) 1755-1762.
[40]D. Benetti, R. Nechache, H. Pepin, J. Macleod, F. Rosei, R. Nouar, A. Sarkissian, Thin film coating and method of fabrication thereof, Patent Application Publication, 15 (2019) 177834.
[41]C. Yang, B. Jiang, Z. Liu, J. Hao, L. Feng, Structure and properties of Ti films deposited by DC magnetron sputtering, pulsed DC magnetron sputtering and cathodic arc evaporation, Surf. Coat. Technol. , 304 (2016) 51-56.
[42]L. Lina, Reactive Sputter deposition of functional thin films, Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, 945 (2012) 175666.
[43]A. J. Bard, L. R. Faulkner, Electrochemical methods fundamentals and applications, John Wiley & Sons, (2001).
[44]F. Brusciotti, P. Duby, Cyclic voltammetry study of arsenic in acidic solutions, Electrochim. Acta, 52 (2007) 6644-6649.
[45]J. Zhang, M. An, L. Chang, Study of the electrochemical deposition of Sn-Ag-Cu alloy by cyclic voltammetry and chronoamperometry, Electrochim. Acta, 54 (2009) 2883-2889.
[46]T. Hezard, K. Fajerwerg, D. Evrard, V. Colliere, P. Behra, P. Gros, Gold nanoparticles electrodeposited on glassy carbon using cyclic voltammetry: application to Hg(II) trace analysis, J. Electroanal. Chem. , 664 (2012) 46-52.
[47]P. Allongue, L. Cagnon, C. Gomes, A Gundel, V. Costa, Electrodeposition of Co and Ni/Au(111) ultrathin layers. Part I: nucleation and growth mechanisms from in situ STM, Surf. Sci. , 557 (2004) 41-56.
[48]T. M. Manhabosco, G. Englert, I. L. Muller, Characterization of cobalt thin films electrodeposited on to silicon with two different resistivities, Surf. Coat. Technol. , 200 (2006) 5203-5209.
[49]Y. Yao, L. Zhang, X. Duan, J. Xu, W. Zhou, Y. Wen, Differential pulse striping voltammetric determination of molluscicide niclosamide using three different carbon nanomaterials modified electrodes, Electrochim. Acta, 127 (2014) 86-94.
[50]D. A. Jones, Localized surface plasticity during stress corrosion cracking, Corro. Sci. , 5 (1996) 356-362.
[51]A. C. Frank, P. T. A. Sumogjo, Electrodeposition of cobalt from citrate containing baths, Electrochem. Acta, 132 (2014) 75-82.
[52]Y. T. Hsieh, M. C. Lai, H. L. Huang, I. W. Sun, Speciation of cobalt-chloride-based ionic liquids and electrodeposition of Co wires, Electrochim. Acta, 117 (2014) 217-223.
[53]S. Mahdavi, S. R. Allahkaram, Effect of bath composition and pulse electrodeposition condition on characteristics and microhandness of cobalt coatings, Trans. Nonferrous Met. Soc. China, 28 (2018) 2017-2027.
[54]G. Panzeri, A. Accogli, E. Gibertini, S. Varotto, C. Rinaldi, L. Nobili, L. Magagnin, Electrodeposition of cobalt thin films and nanowires from ethylene glycol-based solution, Electrochem. Commun. , 103 (2019) 31-36.
[55]B. Pan, Q. Zhang, Z. Liu, Y. Yang, Influence of butynediol and tetrabutylammonium bromide on the morphology and structure of electrodeposited cobalt in the presence of saccharin, Mater. Chem. Phys. , 228 (2019) 37-44.
[56]P. G. Schiavi, P. Altimari, R. Zanoni, F. Pagnanelli, Morphology-controlled synthesis of cobalt nanostructures by facile electrodeposition: transition from hexagonal nanoplatelets to nanoflakes, Electrochim. Acta, 220 (2016) 405-416.
[57]P. Altimari, P. C. Schiavi, A. Rubino, F. Pagnanelli, Electrodeposition of cobalt nanoparticles: An analysis of the mechanisms behind the deviation from three-dimensional diffusion-control, J. Electroanal. Chem. , 851 (2019) 113413.
[58]M. L. Munford, L. Seligman, M. L. Sartorelli, E. Voltolini,L. F. O. Martins, Electrodeposition of magnetic thin films of cobalt silicon, J. Magn. Magn. Mater. , 226 (2001) 1613-1615.
[59]X. Cao, L. Xu, Y. Shi, Y. Wang, X. Xue, Electrochemical behavior and electrodeposition cobalt from choline chloride-urea deep eutectic solvent, Electrochim. Acta 295 (2019) 550-557.
[60]A. Foyet, A. Hauser, W. Schafer, Electrochemical deposition the cobalt nanostructure by double template and pulse current methods, Mater. Sci. Eng. C, 27 (2007) 100-104.
[61]A. Sahari, A. Azizi, N. Fenineche, G. Schmerber, A. Dinia, Elcctrochemical study of cobalt nucleation mechanisms on different metallic substrate, Mater. Chem. Phys. , 108 (2008) 345-352.
[62]A. Damian, F. Maroun, P. Allongue, Electrochemical growth and dissolution of Ni on bimetallic Pd/Au(111) substrates, Electeochem. Acta, 55 (2010) 8087-8099.
[63]T. Z. Luo, L. Guo, R. C. Cammarata, Real-time intrinsic stress generation during Volmer-Weber growth of Co by electrochemical deposition, J. Cryst. Growth, 312 (2010) 1267-1270.
[64]H. Harti, J. L. Bubendorff, A. Florentin, C. Pirri, J. Ebothe, Analysis of substrate effect on nucleation and growth mode of electrodepodsited cobalt on copper and graphite electrodes, J. Cryst. Growth, 319 (2011) 79-87.
[65]J. Y. Zheng, Z. L. Quan, G. Song, C. W. Kim, H. G. Cha, T. W. Kim, W. Shin, K. J. Lee, M. H. Jung, Y. S. Kang, Vertical cobalt dendrite array films: electrochemical deposition and characterization, glucose oxidation and magnetic properties, J. Mater. Chem. , 22 (2012) 12296.
[66]M. P. Pardave, J. A. Gonzalez, L. E. Botello, E. M. A. Estrada, M. T. R. Silva, J. Mostany, M. R. Romo, Influence of temperature on thermodynamics and kinetics of cobalt electrochemical nucleation and growth, Elcetrochim. Acta, 241 (2017) 162-169.
[67]Y. Hu, T. Lyons, Q. Huang, Influence of furil dioxime on cobalt electrochemical nucleation and growth, J. Electrochem. Soc. , 167 (2020) 022509.
[68]J. M. Fisher, L. E. A. Berlouis, B. N. Rospendowski, P. J. Hall, M. G. Astles, In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride, Semicond. Sci. Technol. , 8 (1993) 1459-1464.
[69]H. Kockar, M. Alper, T. Sahin, O. Karaagac, Role of electrolyte pH on structural and magnetic properties of Co-Fe films, J. Magn. Magn. Mater. , 322 (2010) 1095-1097.
[70]L. Tian, J. Xu, S. Xiao, The influence of pH and bath composition on properties of Ni-Co coatings synthesized by electrodeposition, Vacuum, 86 (2011) 27-33.
[71]A. Franczak, A. Levesque, F. Bohr, J. Douglade, J. P. Chopart, Structural and morphological modifications of Co-thin films caused by magnetic field and Ph variation, Appl. Surf. Sci. , 258 (2012) 8683-8688.
[72]R. A. J. Critelli, P. T. A. Sumodjo, M. Bertotti, R. M. Torresi, Influence of glycine on Co electrodeposition: IR spectroscopy and near-surface pH investigations, Electrochim. Atca, 260 (2018) 762-771.
[73]I. Stankeviciene, A. Jaminiene, L. T. Tamasaiunaite, Z. Sukackiene, M Gedvilas, E. Norkus, Investigation of electroless deposition of cobalt films by EQCM in the presence of different amines, Mater. Sci. Eng. B, 241 (2019) 9-12.
[74]J. Wu, F. Wafula, S. Branagan, H. Suzuki, and J. V. Eisden, Mechanism of Cobalt Bottom-Up Filling for Advanced Node Interconnect Metallization, J. Electrochem. Soc. , 166 (2019) D3136-D3141.
[75]M. A. Rigsby, L. J. Brogan, N. V. Doubina, Y. Liu, E. C. Opocensky, T. A. Spurlin, J. Zhou, and J. D. Reid, The Critical Role of pH Gradient Formation in Driving Superconformal Cobalt Deposition, J. Electrochem. Soc. , 166 (2019) D3167-D3174.
[76]D. Wu, D. J. Solanki, A. Joi, Y. Dordi, N. Dole, D. Litvnov, and S. R. Brankovic, Pb Monolayer Mediated Thin Film Growth of Cu and Co: Exploring Different Concepts, J. Electrochem. Soc. , 166 (2019) D3013-3021.
[77]J. T. Matsushima, F. Trivinho-Strixino, E. C. Pereira, Investigation of cobalt deposition using the electrochemical quartz crystal microbalance, Electrochim. Acta, 51 (2006)1960-1996.
[78]R. Saravanakumar, P .Pirabaharan, L. Rajendran, The theory of steady state current for chronoamperometric and cyclic voltammetry on rotation disk electrodes for Ec’ and ECE’ reactions, Electrochim. Acta, 313 (2019) 441-456.
[79]J. Seo, S. Sankarasubramanian, N. Singh, F. Mizuno, K. Takechi, J. Prakash, Effect of cathode porosity on the litjium-air oxygen reduction reaction – a rotation ring-disk electrode investigation, Electrochim. Acta, 248 (2017) 570-577.
[80]H. G. Schmitt, M. Bakalli, Flow assisted corrosion, Shreir’s Corrosion, 2 (2010) 954-987.
[81]J. E. Baur, Diffusion Coefficients, Handbook of Electrochemistry, 19 (2007) 829-848.
[82]T. Maruyama, T. Nakai, Cobalt thin films prepared by chemical vapor deposition from cobaltous acetate, Appl. Phys. Lett. , 59 (1991) 1443.
[83]A. R. Londergan, G. Nuesca, C. Goldberg, G. Peterson, A. E. Kaloyeros, B. Arkles, J. J. Sullivan, Intermediated epitaxy of cobalt silicide on silicon (100) from loe temperature chemical vapor deposition of cobalt, J. Electrochem. Soc. , 148 (2001) C21-C27.
[84]B. S. Lim, A. Rahtu, R. G. Gordon, Atomic layer deposition transition metal, Nat. Mater. , 2 (2003) 749-754.
[85]H. Shimizu, K. Sakoda, T. Momose, M. Koshi, Y. Shimogaki, Hot-wire-assisted atomic layer deposition oh high quality cobalt film using cobaltocene : elementary reaction analysis on NH x radical formation, J. Vac. Sci. Technol. , A30 (2012) 01A144.
[86]S. L. Cheng, T. L. Hsu, T. Lee, S. W. Lee, J. C. Hu, L. T. Chen, Characterization and kinetic of electroless deposition of pure cobalt thin films on silicon substrate, Appl. Surf. Sci. , 264 (2013) 732-736.
[87]K. Venkatraman, Y. Dordi, R. Akolkar, Electrochemical atomic layer deposition of cobalt enabled by the surface-limited redox replacement of underpotentially, J. Electrochem. Soc. , 164 (2017) D104-D109.
[88]S. Jung, D. K. Nandi, S. Yeo, H. Kim, Y. Jang, J. S. Bae, T. E. Hong, S. H. Kim, Phase-controlled growth of cobalt oxide thin films by atomic layer deposition, Surf. Coat. Technol. 337 (2018) 404-410.
[89]T. Thuening, J. Walker, H. Adams, O. Furlong, W. T. Tysoe, Kinetics of low-temperature CO oxidation on Au(111), Surf. Sci. , 648 (2016) 236-241.
[90]M. R. Khelladi, L. Mentar, M. Boubatra, A. Azizi, A. Kahoul, Early stages of cobalt electrodeposition on FTO and n-type Si substrates in sulfate medium, Mater. Chem. Phys. , 122 (2010) 449-453.
[91]A. Subramanian, C. Shunmuganathan, T. Vasudevan, V. S. Murlidharan, Amorphous Cobalt-Boron alloy electrodeposition and dissolution, Trans IMF, 79 (2001) 119-122.
[92]Y. Sverdlov, V. Bogush, H. Einati, Y. S. Diamand, Electrochemical study of electroless deposition of Co(W, B) alloys, J. Electrochem. Soc. , 152 (2005) C631-C638.
[93]Y. N. Bekish, S. S. Grabchilov, L. S. Tsybulskaya, V. A. Kukareko, and S. S. Perevoznikov, Electroplated cobalt-boron alloys: formation and structure features, Protection of Metal and Physical Chemistry of Surfaces, 49 (2013) 319-324.
[94]U. Admon, A. Baror, and D. Treves, Microstructure of cobalt and cobaltphosphorous, thin films, J. Appl. Phys. , 44 (1973) 1662553.
[95]K. Huller, M. Sydow, G. Dietz, Magnetic anisotropy, magnetostriction and intermediate order in Co-P alloys, J. Magn. Magn. Mater. , 53 (1985) 269-274.
[96]C. W. Chiu, I. W. Sun, P. Y. Chen, Electrodeposition and characterization of CoP compounds produced from the hydrophilic room-temperature ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide, J. Electrochem. Soc. , 164 (2017) H5018-H5025.
[97]Y. H. Su, T. C. Kuo, W. H. Lee, Y. S. Wang, C. C. Hung, W. H. Tseng, K. H. Wei, Y. L. Wang, Effect of tungsten incorporation in cobalt tungsten alloys as seedless diffusion barrier materials, Microelectron. Eng. , 171 (2017) 25-30.
[98]J. G. Torres, E. Valles, E. Gomez, Giant magnetoresistance in electrodeposited Co-Ag granular films, Mater. Lett. , 65 (2011) 1865-1867.
[99]Y. B. Cho, S. Moon, C. Lee, Y. Lee, One-pot electrodeposition of cobalt fiower-decorated silver nanotrees for oxygen reduction reaction, Appl. Surf. Sci. , 394 (2017) 267-274.
[100]K. Z. Rozman, J. Kovac, P. J. McGuiness, Z. Samardzija, Microstructural compositional and magnetic characterization of electrodeposited and annealed Co-Pt-based thin films, Thin Solid Film, 518 (2010) 1751-1755.
[101]Q. F. Zhou, L. Y. Lu, L. N. Yu, X. G. Xu, Y. Jiang, Multifunctional Co-Mo films fabricated by electrochemical deposition, Electrochem. Acta, 106 (2013) 258-263.
[102]L. Shi, C. Sun, P. Gao, F. Zhou, W. Liu, Mechanical properties and wear and corrosion resistance of electrodeposited Ni-Co/SiC nanocomposite coating, Appl. Surf. Sci. , 252 (2006) 3591-3599.
[103]L. D. Rafailovic, H. P. Karnthaler, T. Trisovic, D. M. Minic, Microstructure and mechanical properties of disperse Ni-Co alloys electrodeposited on Cu substrates, Mater. Chem. Phys. , 120 (2010) 409-416.
[104]B. Bahadormanesh, A. Dolati, M. R. Ahmadi, Electrodeposition and characterization of Ni-Co/SiC nanocomposite coatings, J. Alloys Compd. , 509 (2011) 9406-9412.
[105]L. Tian, J. Xu, C. Qiang, The electrodeposition behaviors and magnetic properties of Ni-Co films, Appl. Surf. Sci. , 257 (2011) 4689-4694.
[106]C. Lupi, A. DellEra, M. Pasquali, P. Imperatori, Composition, morphology, structural aspects and electrochemical properties of Ni-Co alloy coating, Surf. Coat. Technol. , 205 (2011) 5394-5399.
[107]A. Karpuz, H. Kockar, M. Alper, O. Karaagac, M. Haciismailoglu, Electrodeposited Ni-Co films from electrolytes with different Co contents, Appl. Surf. Sci. , 258 (2012) 4005-4010.
[108]F. Z. Bouzit, A. Nemancha, H. Moumeni, J. L. Rehspringer, Morphology and Rietveld analysis of nanostructured Co-Ni electrodeposited thin films obtained at current densities, Surf. Coat. Technol. , 315 (2017) 172-180.
[109]A. K. Chaudhari, V. B. Singh, A review of fundamential aspects, characterization amd applications of electrodeposition nanocrystalline iron group metals, Ni-Fe alloy and oxide ceramics reinforced nanocomposite coating, J. Alloys compd. , 751 (2018) 194-214.
[110]M. A. Raj, S. Arumainathan, Comparative study of hydrogen evolution behavior of Nickel Cobalt and Nickel Cobalt Magnesium alloy film prepared by pulsed electrodeposition, Vacuum, 160 (2019) 461-466.
[111]C. D. Lokhande, S. S Kulkarni, R. S. Mane, K. C. Nandi, S. H. Han , Structural and magnetic properties of single-step electrochemically deposited nanocrystalline cobalt ferrite thin films, Current Appl. Phys. , 8 (2008) 612-615.
[112]Y. Chen, Q. P. Wang, C. Cai, Y. N. Yuan, F. H. Cao, Z. Zhang, J. Q. Zhang, Electrodeposition and characterization of nanocrystalline CoNiFe films, Thin Solid Films, 520 (2012) 3553-3557.
[113]X. Yang, J. Q. Wei, X. H. Li, L. Q. Gong, T. Wang, F. S. Li, Thickness dependence of microwave magnetic properties in electrodeposited Fe-Co soft magnetic films with in-plane anisotropy, Physic B 407 (2012) 555-559.
[114]Y. Zhang, D. G. Ivey, Electrodeposition of nanocrystalline CoFe soft magnetic thin films from citrate-stabilized baths, Mater. Chem. Phys. , 204 (2018) 171-178.
[115]E. Vernickaite, N. Tsyntsaru, K. Sobczak, H. Cesiulis, Electrodeposited tungsten-rich Ni-W, Co-W and Fe-W cathodes for efficient hydrogen evolution in alkaline medium, Electrochim. Acta, 318 (2019) 597-606.
[116]C. Liu, F. Su, J. Liang, Producing cobalt-graphene composite coating by pulse electrodeposition with excellent wear and corrosion resistance, Appl. Surf. Sci. , 351 (2015) 889-896.
[117]N. M. Pereira, O. Brincoveanu, A. G. Pantazi, C. M. Pereira, J. P. Araujo, A. F. Silva, M. Enachescu, L. Anicai, Electrodeposition of Co and Co composites with carbon nanotubes using choline chloride-based ionic liquids, Surf. Coat. Technol. , 324 (2017) 451-462.
[118]A. M. Kwiecinska, D. Kutyla, K. K. Siedlecka, K. Skibnska, P. Zabinski, R. Kowalik, Electrochemical analysis of co-deposition cobalt and selenium, J. Electroanal. Chem. , 848 (2019) 113278.
[119]G. Bulai, V. Trandafir, S. A. Irimiciuc, L. Ursu, C. Focsa, S. Gurlui, Influence of rare earth addition in cobalt ferrite thin films obtained by pulsed laser deposition, Ceram. Int. , 45 (2019) 20165-20171.
[120]C. S. Fadley, X-ray photoelectron spectroscopy: progress and perspectives, J. Electron Spectros. Relat. Phenomena, 178-179 (2012) 2-32.
[121]F. Cubadda, Chapter 19 – Inductively coupled plasma mass spectrometry, Food Toxicants Analysis, 19 (2007) 697-751.
[122]M. K. Rahman, F. Nemouchi, T. Chevolleau, P. Gergaud, K. Yckache, Ni and Ti silicide oxidation for CMOS applications investigated by XRD, XPS, and FPP, Mater. Sci. Semicond. Process, 71 (2017) 470-476.
[123]A. D. Luca, A. Portavoce, M. Texier, N. Burle, D. Mangelinck , G. Isella, First stage of Ni reaction with the Si(Ge) Alloy, J. Alloys Compd. , 695 (2017) 2799-2811.
[124]D. Hamulic, I. Milosev, D. L. Hecht, The effect the deposition conditions on structure, composition and morphology of electrodeposited cobalt materials, Thin Solid Films, 667 (2018) 11-20.
[125]S. M. Youssry, I. S. E. Hallag, R. Kumar, G. Kawamura, A. Matsuda, M. N. E. Nahass, Synthesis of mesoporous Co(OH)2 nanostructure film via electrochemical deposition using lyotropic crystal template as improved electrode materials for supercapacitors application, J. Electroanal. Chem. , 857 (2020) 113728.
[126]D. Grujicic, B. Pesic, Electrochemical and AFM study of cobalt nucleation mechanisms on glassy carbon from ammomium sulfate solutions, Electrochim. Acta, 49 (2004) 4719-4732.
[127]S. S. Zumdahl, S. A. Zumdahl, H. F. Hus, General Chemical, 8th Edition (2015).
[128]M. Boubatra, A. Azizi, G. Schmerber, The influence of pH value electrolyte on the electrochemical deposition and properties of nickel thin films, Ionics, 18 (2012) 425-432.
[129]M. A. Rigsby, L. J. Brogan, N. V. Doubina, Y. Liu, E. C. Opocensky, T. A. Spurlin, J. Zhou, J. D. Reid, The critical role of pH gradient formation in driving superconformal cobalt deposition, J. Electrochem. Soc. , 166 (2019) D3167-D3174.
[130]K. Ignatova, Y. Marcheva, Kinetics of electrodeposition of NiP, CoP and NiCoP coatings depending on sodium hypophosphite concentration, J. Chem. Technol. Metall. , 53 (2018) 549-555.
[131]S. Bilgic, A. A. Aksut, Effect of acids on corrosion of cobalt in H2SO4, British Corrosion Journal, 28 (1993) 59-62.
[132]S. B. Pawlowska, K. Mech, R. Kowalik, P. Zabinski, Analysis of electrodeposition parameters influence on cobalt deposit roughness, Appl. Surf. Sci. , 388 (2016) 805-808.
[133]P. Patnaik, S. K. Padhy, B. C. Tripathy, Electrodeposition of cobalt from aqueous sulphate solutions in the presence of tetra ethyl ammonium bromide, Trans. Nonferrous Met. Soc. China, 25 (2015) 2047-2053.
[134]Y. Zhong, L. Yin, P. He, W. Liu, Z. Wu, H. Wang, Surface chemistry in cobalt phosphide-stabilized lithium-sulfur batteries, J. Am. Chem. Soc. , 10 (2018) 11434.
[135]M. C. Biesinger, B. P. Payne, A. P. Grosvenor, L W. M. Lay, A. R. Gerson, R. S. C. Smart, Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Cr, Mn, Fe, Co and Ni, Appl. Surf. Sci. , 257 (2011) 2717-2730.
[136]Y. Li, Z. Mao, Q. Wang, D. Li, R. Wang, B. He, Y. Gong, H. Wang, Hollow nanosheet array of phosphorus-anion-decorated cobalt disulfide as an efficient electrocatalyst for overall water splitting, Chem. Eng. J. , 390 (2020) 124556.
[137]A.J. Bard, L.R. Faulkner, Electrochemical Methods Fundamentals and Applications, 2nd, John Wiley & Sons, Inc. (2001).
[138]C. Du, Q. Tan, G. Yin, J. Zhang, Rotation disk electrode method, Rotating Electrode Methods and Oxygen Reduction Electrocatalysts, 5 (2014) 171-198.
[139]H. Jung, N. V. Myung, Electrodeposition of antimony telluride thin films from acidic nitrate- tartrate baths, Electrochim. Acta, 56 (2011) 5611-5615.
[140]J. D. Lee, T. H. An, H. G. Noh, S. G. Kim, Y. R. Choi, Growth Kinetics and properties of thin cobalt films electrodeposited on n-Si(100), Jpn. J. Appl. Phys. , 49 (2010) 085802.
[141]D. Spoddig, R. Meckenstock, J. P. Bucher, J. Pelzl, Studies of ferrmagnetic resonance line width during electrochemical deposition of Co films on Au(111), J. Magn. Magn. Mater. , 286 (2005) 286-290.
[142]Y. Chen, L. Wang, A. Pradel, M. Ribes, M. C. Record, A voltammetric study of the underpotential deposition of cobalt and antimony on gold, J. Electroanal. Chem. , 724 (2014) 55-61.
[143]N. Tournerie, A. Engelhardt, F. Maroun, P. Allongue, Probing the electrochemical interface with in situ magnetic characterizations: A case study of Co/Au(111) layers, Surf. Sci. , 631 (2015) 88-95.
[144]F. Pagnanelli, P. Alyimari, M. Bellagamba, G. Granata, E. Moscardini, P. G. Schiavi, L. Toro, Pulsed electrodeposition of cobalt nanoparticles on copper: influence of the operating parameters on size distribution and morphology, Electrochim. Acta, 155 (2015) 228-235.
[145]W. Kozlowski, I. Piwonski, W. Szmaja, M. Zielinski, Quantitative study of the effect of current density on the morphological and magnetic domain structures of electrodeposited nanocrystalline cobalt films, J. Electroanal. Chem. , 769 (2016) 42-47.
[146]A. Sahari, A. Azizi, N. Fenineche, G. Schmerber, A. Dinia, Nucleation and surface morphology of cobalt films electrodeposited on Pt/Si substrate, Surf. Rev. Lett. , 12 (2005) 391-396.
[147]Y. D. Yu, M. G. Li, G. Y. Wei, H. L. Ge, Effects of pH values on electroless deposition of CoP films, Surf. Eng. , 29 (2013) 767-771.