本研究利用射頻磁控共濺鍍系統(RF magnetron co-sputteing system)，沉積未摻雜氧化鋅薄膜，分別利用霍爾量測及光激發螢光光譜量測，分析薄膜在不同熱退火環境以及溫度下的光電特性，研究結果顯示，氧化鋅薄膜經過氮氣環境600 ℃熱退火處理後具有較佳的結晶性，而從氧化鋅/p-Si之異質接面二極體元件的電流-電壓特性也可以發現，在氮氣環境600度熱處理氧化鋅薄膜的異質結構，具有最佳的整流特性；為了改善氧化鋅薄膜的內部缺陷，研究中接著改變氧化鋅薄膜厚度，研究結果顯示，氧化鋅薄膜中的載子濃度表現出隨著厚度下降而下降，且從不同厚度氧化鋅薄膜沉積於p型矽基板之異質接面二極體，可以發現整流比隨著厚度下降而上升；為了進一步改善ZnO/p-Si異質結構二極體特性，抑制元件操作時的穿隧電流，本研究討論在沉積氧化鋅薄膜前，預先沉積電子侷限層，以增加電子侷限能力，研究結果顯示，加入侷限層後，能有效抑制氧化鋅的本質缺陷，並改善氧化鋅的結晶性，獲得更優秀的元件整流特性。

In this study, an RF magnetron co-sputtering system was used to deposit undoped ZnO thin films. Hall measurement and photoexcitation fluorescence spectroscopy were used to analyze the films in different thermal annealing environments and The photoelectric characteristics at temperature, the research results show that the zinc oxide film has better crystallinity after thermal annealing at 600 ℃ in nitrogen environment, and the current-voltage characteristics of the ZnO/p-Si heterojunction diode element It can also be found that the heterostructure of the zinc oxide film heat treated at 600 degrees in a nitrogen environment has the best rectification characteristics; in order to improve the internal defects of the zinc oxide film, the thickness of the zinc oxide film was changed in the study. The carrier concentration of ZnO decreases with decreasing thickness, and from heterojunction diodes deposited on p-type silicon substrates from ZnO films of different thicknesses, it can be found that the rectification ratio increases with decreasing thickness; in order to further improve the ZnO/ The diode characteristic of p-Si heterostructure can suppress the tunneling current during the operation of the device. In this study, the electron confinement layer is pre-deposited before the deposition of the zinc oxide film to increase the electron confinement ability. The research results show that after adding the confinement layer, the It can effectively inhibit the essential defects of zinc oxide, improve the crystallinity of zinc oxide, and obtain better rectification characteristics of components.

摘要......i
Abstract......ii
誌謝......iii
目錄......iv
表目錄......vii
圖目錄......viii
第一章 緒論......1
1.1 前言......1
1.2 文獻回顧......1
1.2.1 氧化鋅/p型矽基板異質接面二極體......1
1.2.2電子侷限層應用於二極體元件之研究......2
1.3 研究動機與目的......2
第二章 理論基礎......4
2.1 電漿理論......4
2.2 射頻磁控濺鍍原理......5
2.3 薄膜成核理論......5
2.4薄膜材料特性簡介......6
2.4.1氧化鋅薄膜......6
2.4.2氧化銦錫薄膜......6
2.4.3金屬薄膜......6
2.4.4氮化鋁薄膜......7
2.4.5氧化鎂薄膜......7
2.5 金屬與半導體接觸理論......7
2.5.1歐姆接觸理論......7
2.5.2傳輸線模型......8
第三章 實驗製程方法與步驟......17
3.1 薄膜製作流程......17
3.1.1 基板清洗......17
3.1.2 濺鍍系統......17
3.1.3 鍍膜製作流程......18
3.2 傳輸線模型製程流程......18
3.3 二極體製程流程......19
3.3.1 不同環境氧化鋅薄膜異質結構二極體......19
3.3.2 不同溫度氧化鋅薄膜異質結構二極體......19
3.3.3 不同厚度氧化鋅薄膜異質結構二極體......20
3.3.4加入電子侷限層後，氧化鋅薄膜異質結構二極體......20
3.4 實驗儀器量測原理......21
3.4.1 表面輪廓分析儀......21
3.4.2 霍爾效應量測系統......21
3.4.3光學穿透率量測......22
3.4.4 光激發螢光量測系統......22
3.4.5 半導體參數分析儀......22
3.4.6 低掠角X光繞射儀(Grazingincident X-ray diffractionpattern；GIXRD)......22
第四章 結果與討論......31
4.1不同環境經快速熱退火處理氧化鋅薄膜特性分析......31
4.1.1不同環境快速熱退火處理氧化鋅薄膜之光電特性分析......31
4.1.2不同溫度快速熱退火處理氧化鋅薄膜光電特性及氧化鋅異質接面二極體元件特性分析......34
4.2不同厚度經快速熱退火處理氧化鋅薄膜異質結構接面二極體特性分析......35
4.2.1不同厚度經快速熱退火處理氧化鋅薄膜異質結構之電特性及結晶性分析......35
4.2.2不同厚度經快速熱退火處理氧化鋅異質結構接面二極體特性分析......36
4.3 在n-ZnO/p-Si結構中加入不同侷限層對於二極體元件特性影響之研究......37
4.3.1在n-ZnO/p-Si結構中加入不同侷限層之薄膜光電特性分析......38
4.3.2在n-ZnO/p-Si結構中加入不同侷限層之異質接面二極體元件特性分析......39
第五章 結論與未來工作......66
參考文獻......68

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