臺灣博碩士論文加值系統

本研究論文探討氫摻雜氧化銦錫堆疊層對具氧化鉬電洞選擇性接觸層及背鋁表面電場之單晶矽太陽能電池光電特性研究，藉由改變氬與氫氬氣(Ar 95 % + H2 5 %)混合氣體之比率調控氫氣的含量，在固定總氣體流量下，改變氫氣濃度分別為0~5%沉積氧化銦錫(ITO:H)，以獲得ITO:H內更好的載子移動率與電阻率。同時藉由不同氫含量ITO:H堆疊層改善長波段之穿透率，進而提升串接太陽能電池之底部元件的光電效率。使用霍爾量測分析儀、紫外光/可見光/紅外光分光光譜儀、場發射掃描式電子顯微鏡、傅立葉轉換紅外光譜儀及橢圓偏振儀分析ITO:H薄膜特性，後續實驗將最佳參數之堆疊層氧化銦錫(ITO:H)濺鍍在具氧化鉬電洞選擇性接觸層之太陽能電池正面上，研究其元件之光電轉換效率(PCE)與比較衰減率變化。
實驗結果顯示，不同氫含量的氧化銦錫(ITO:H)薄膜沉積速度不同，氫氣含量越高其鍍率越小，因此濺鍍相同厚度薄膜所需時間更久。在相同薄膜厚度80 nm，濺鍍氫含量H2 (1%)之氧化銦錫薄膜具有高開路電壓Voc、高短路電流密度Jsc及優異的長波段之穿透率，故與其他單層ITO:H薄膜比較，氫含量H2 (1%)有最佳之衰減百分比為-3.00%。接著探討氫摻雜氧化銦錫(ITO:H)堆疊層之影響，實驗結果顯示，在相同薄膜厚度80 nm，堆疊三層氫濃度分別為0%、1%、2%具有最佳的長波段之穿透率，此堆疊結構平均穿透度為85.93 %，高於其他單層薄膜。後續實驗將三層堆疊結構氧化銦錫(ITO:H)濺鍍在具氧化鉬電洞選擇性接觸層之太陽能電池正面上，其實驗結果顯示，具背氧化鉬/銀之元件其光電轉換效率衰減最低，濺鍍前後的光電效率分別為20.27 % 與19.88 %，僅衰減0.39 %，衰減百分比為最小為-1.93 %。

The effects of hydrogen-doped indium tin oxide (ITO:H) stacked films on photovoltaic characteristics of mono-crystalline silicon solar cells with molybdenum oxides as hole-selective contact layers (HSCLs) and Al back surface field were presented. The hydrogen content was adjusted by changing the ratio of argon and hydrogen-argon (Ar 95 % + H2 5 %) mixed gas. Under a fixed total gas flow rate, ITO:H was deposited by varying the hydrogen concentration from 0% to 5%, to obtain better carrier mobility and resistivity in ITO:H. At the same time, the transmittance of the long-wavelength was improved by the ITO:H stacked layers with different hydrogen contents. Therefore, the conversion efficiency (CE) of the bottom element of the tandem solar cell was enhanced. The ITO:H film properties were analyzed using a hall measurement, UV/VIS/IR spectrometers, field emission-scanning electron microscope, Fourier transforms infrared spectrometer and ellipsometry, respectively. Subsequently, stacked layers of the ITO:H with best parameters were deposited on the front side of the solar cells with MoOx HSCLs. The CEs and the degradation of CE percentage were studied.
The results indicated that different deposition rates of ITO:H films were changed by different hydrogen contents. The deposited rate decreases with increasing hydrogen content. Thus, it takes longer time when sputtering the same thickness of film. Moreover, high open circuit voltage, high short circuit current density, and excellent transmittance of long-wavelength were demonstrated by the sputtered ITO film with hydrogen content H2 (1%) at thickness of 80 nm. Compared with other single-layer ITO:H films, the low reduction percentage of -3.00% was presented by the hydrogen content H2 (1%). The best long-wavelength transmittance of 85.93% was improved by stacking three layers with hydrogen concentrations of 0%, 1%, and 2% at the thickness of 80 nm. The lowest degradation of CE was demonstrated by the cell with MoOx/Ag. The CEs of the cells with before and after sputtering were 20.27 % and 19.88 %, respectively. The reduction and the reduced percentage are measured to be around 0.39% and -1.93 %, respectively.

摘要.....i
Abstract.....ii
誌謝.....iii
目錄.....iv
表目綠.....vii
圖目綠.....viii
第一章 緒論.....1
1.1摻雜氫氣濺鍍氧化銦錫(ITO)之文獻回顧.....1
1.2氧化銦錫應用於鈣鈦礦/單晶矽串接太陽能電池之文獻回顧.....2
1.3 氧化鉬電洞選擇性接觸層應用於太陽能電池之文獻回顧.....3
1.4 研究動機.....4
1.5 論文架構.....4
第二章 實驗流程與特性量測.....5
2.1氫摻雜氧化銦錫之前段實驗流程.....5
2.1.1利用RCA (Radio Corporation of America)清洗矽基板表面自然氧化層.....5
2.1.2藉由鹼性氫氧化鉀(KOH)對矽基板表面濕式蝕刻形成糙化(Textured).....6
2.1.3使用高溫爐管在矽晶片上磷擴散(Diffusion)以形成射極(n+)層.....6
2.1.4擴散後磷玻璃去除(PSG removed)及邊緣隔絕(Edge isolation)和背表面拋光(Polished).....7
2.1.5利用電漿增強化學氣相沉積(Plasma Enhanced Chemical Vapor Deposition；PECVD)正面沉積氮化矽(SiNX)抗反射層.....7
2.1.6藉由網印機將銀膠網印(Screen printing)至抗反射層上並烤乾.....7
2.2氫摻雜氧化銦錫(ITO:H)對背鋁表面電場之太陽能電池光電特性之影響.....7
2.2.1藉由網印機將鋁膠網印(Screen printing)至矽基板的背表面並烤乾.....8
2.2.2使用燒結製程將銀電極刺穿氮化矽(SiNX).....8
2.2.3使用雷射切割機將試片切割為面積2 × 2 cm2.....8
2.2.4太陽能光伏元件電流-電壓量測系統(I-V measurement).....8
2.2.5正面濺鍍不同氫含量單層氧化銦錫(ITO:H)薄膜.....9
2.2.6各種氫摻雜單層ITO:H對具背鋁電場單晶矽太陽能電池光電特性之影響.....9
2.3 具不同氫含量之濺鍍單層ITO:H薄膜的材料分析.....9
2.3.1 Hall量測:電阻率、移動率.....10
2.3.2 UV/VIS/IR分析:穿透率.....10
2.3.3 FE-SEM分析:ITO:H厚度量測.....10
2.3.4 FTIR分析:氫含量分析.....10
2.3.5 橢圓偏振儀分析: ITO:H之折射率n之量測.....10
2.4氫摻雜氧化銦錫(ITO:H)堆疊層對具背鋁電場單晶矽太陽能電池光電特性之影響.....10
2.4.1藉由網印機將鋁膠網印(Screen printing)至矽基板的背表面並烤乾.....11
2.4.2使用燒結製程將銀電極刺穿氮化矽(SiNX).....11
2.4.3使用雷射切割機將試片切割為面積2 × 2 cm2.....11
2.4.4太陽能光伏元件電流-電壓量測系統(I-V measurement).....12
2.4.5正面濺鍍不同氫含量的氧化銦錫(ITO:H)堆疊層薄膜.....12
2.4.6不同氫摻雜ITO:H堆疊層對具背鋁電場單晶矽太陽能電池光電特性之影響.....12
2.5具不同氫含量堆疊層之ITO:H膜的材料分析.....12
2.5.1 Hall量測:電阻率、移動率.....13
2.5.2 UV/VIS/IR分析:穿透率.....13
2.6氫摻雜氧化銦錫(ITO:H)堆疊層對具氧化鉬電洞選擇性接觸層或背鋁電場單晶矽太陽能電池光電特性之比較.....13
2.5.1使用燒結製程將銀電極刺穿氮化矽(SiNX).....13
2.5.2使用雷射切割機將試片切割為面積2 × 2 cm2.....14
2.5.3旋塗兩層抗蝕刻阻擋層(Polymer)於正面並烤乾.....14
2.5.4使用氫氟酸蝕刻液去除矽基板表面自然氧化層.....14
2.5.5蒸鍍氧化鉬於背面作為電洞傳輸層.....14
2.5.6蒸鍍銀金屬於氧化鉬上作為表面電極.....15
2.5.7太陽能光伏元件電流-電壓量測(I-V measurement).....15
2.5.8正面濺鍍不同氫含量的氧化銦錫(ITO:H)堆疊層薄膜.....15
2.5.9不同氫含量ITO:H堆疊層對具氧化鉬電洞選擇性接觸層或背鋁電場單晶矽太陽能電池光電特性之比較.....16
第三章 氫摻雜氧化銦錫堆疊層對單晶矽太陽能電池之光電特性研究.....31
3.1 氫摻雜氧化銦錫(ITO:H)對背鋁表面電場之太陽能電池光電特性之影響.....31
3.1.1 各種氫摻雜單層ITO:H對具背鋁電場單晶矽太陽能電池光電特性之影響.....31
3.1.2 結論.....32
3.2 具不同氫含量之濺鍍單層ITO:H薄膜的材料分析.....32
3.2.1 Hall量測:電阻率、移動率.....33
3.2.2 UV/VIS/IR分析:穿透率.....33
3.2.3 FE-SEM分析:ITO:H厚度量測.....33
3.2.4 FTIR分析:氫含量分析.....33
3.2.5 橢圓偏振儀分析:ITO:H之折射率n之量測.....33
3.2.2 結論.....34
3.3 氫摻雜氧化銦錫(ITO:H)堆疊層對具背鋁電場單晶矽太陽能電池光電特性之影響.....34
3.3.1 不同氫摻雜ITO:H堆疊層對具背鋁電場單晶矽太陽能電池光電特性之影響.....34
3.3.2 結論.....35
3.4 具不同氫含量堆疊層之ITO:H膜的材料分析.....35
3.4.1 Hall量測:電阻率、移動率.....35
3.4.2 UV/VIS/IR分析:穿透率.....35
3.4.3 結論.....36
3.5 氫摻雜氧化銦錫(ITO:H)堆疊層對具氧化鉬電洞選擇性接觸層或背鋁電場單晶矽太陽能電池光電特性之比較.....36
3.5.1 不同氫含量ITO:H堆疊層對具氧化鉬電洞選擇性接觸層或背鋁電場單晶矽太陽能電池光電特性之比較.....36
3.5.2 結論.....37
第四章 總結論與未來展望.....55
4.1總結論.....55
4.2未來展望.....55
參考文獻.....56
Extended Abstract.....59
Abstract.....59
Introduction.....60
Experimental.....61
Results and Discussion.....61
Conclusions.....62
Results and Discussion.....63

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