本研究利用旋塗塗佈法，在矽基板(silicon wafer)上製作具碳氫結構之奈米球做為致孔劑，利用射頻電漿增強化學氣相沉積系統（Plasma-enhanced chemical vapor deposition; PECVD），再分別以室溫、70、100以及120 ℃的溫度下，以四甲基矽烷(Tetramethylsilane; TMS)單體為源氣體在碳氫結構之奈米球表面上沉積非晶氫化碳氧化矽薄膜，再利用高溫退火爐，分別在真空、大氣以及氮氣不同環境下進行分別300、500、700以及900 ℃溫度下進行退火，觀察氫化碳氧化矽薄膜經不同製程溫度下，進行不同環境不同溫度退火後的表面粗糙度、薄膜結構分析、熱穩定性以及電特性分析。
此外，在研究中亦探討氫化碳氧化矽薄膜在加入奈米球做為致孔劑的結構與特性可靠性。研究結果顯示，在加入奈米球做為致孔劑對於氫化碳氧化矽薄膜退火後的鍵結更加強健，並使薄膜熱穩定性變得更佳，氫化碳氧化矽薄膜退火後內部鍵結產生較大反應，造成薄膜性質的大量改變，使得碳氫相關鍵結因退火溫度逐漸升高，使氧原子的取代氫原子缺位，導致薄膜改變為氧化矽薄膜，為了進一步了解奈米球做為致孔劑對於非晶氫化碳氧化矽薄膜結構的影響，本研究更詳細分析，非晶氫化碳氧化矽薄膜結構在不同環境以及不同溫度退火條件下之薄膜特性改變趨勢，並觀察電特性與熱穩定性變化機制。

In this study, hydrocarbon-structured nanospheres were fabricated on a silicon wafer as a porogenic agent by spin-coating. The amorphous hydrogenated silicon carbide films were deposited on the surface of hydrocarbon nanospheres using Tetramethylsilane (TMS) monomer as the source gas at room temperature, 70, 100, and 120 °C. The films were then annealed at 300, 500, 700, and 900 °C in a high-temperature annealing furnace under vacuum, atmosphere, and nitrogen. The surface roughness, film structure analysis, thermal stability and electrical characteristics of the hydrogenated silicon carbide films were observed after annealing at different temperatures under different process temperatures.
In addition, the reliability of the structure and properties of the hydrogenated silicon carbide films were investigated by adding nanospheres as porogenic agents. The results showed that the addition of nanospheres as a porogenic agent resulted in stronger bonding and better thermal stability of the hydrogenated SiC films after annealing, and the internal bonding of the hydrogenated SiC films reacted more after annealing, resulting in a large number of changes in the film properties. To further understand the effect of nanospheres as porogenic agent on the structure of amorphous hydrogenated silicon carbide films, this study analyzed in more detail the trend of changes in the properties of amorphous hydrogenated silicon carbide films under different environments and annealing conditions at different temperatures, and observed the mechanisms of changes in electrical properties and thermal stability.

摘要........i
Abstract........ii
誌謝........iii
目錄........iv
表目錄........vi
圖目錄........vii
第一章 緒論........1
1.1前言........1
1.2文獻回顧........2
1.2.1 非晶氫化碳氧化矽薄膜的材料特性........2
1.2.2 結晶碳化矽的結構以及性質........3
1.2.3 低介電常數材料特性........4
1.2.4 自組裝聚苯乙烯奈米球........5
1.3 研究動機與目的........5
第二章 理論基礎........8
2.1電漿成分及原理........8
2.2化學氣相沉積薄膜之成長機制........9
2.3化學氣相沉積法之種類........9
2.4薄膜成長原理........10
2.4紅外線傅立葉光譜儀分析方法以及原理........11
(1)穿透式傅立葉轉換紅外線光譜分析法(Transmission FTIR)........11
(2)反射式傅立葉轉換紅外線光譜分析法(Reflectance FTIR)........12
(3)衰減式全反射傅立葉轉換紅外線光譜分析法(Attenuated total reflectance FTIR)........12
第三章 實驗方法及步驟........17
3.1實驗流程........17
3.2實驗系統........17
3.2.1電漿增強化學氣相沉積系統........17
3.2.2旋轉塗佈系統(Spin coating)........18
3.2.2紫外光臭氧清洗機系統(UV-Ozne system)........18
3.2.3高溫退火爐(High temperature annealing furnace)........18
3.3薄膜量測分析........18
3.3.1原子力顯微鏡(Atomic force microscope；AFM)........18
3.3.2 α-step表面輪廓儀........19
3.3.3 傅立葉轉換紅外線吸收光光譜儀(Fourier transform infrared spectroscopy；FTIR) ........19
3.3.4X光繞射儀(X-Ray Diffractometer)原理........19
3.3.5 接觸角量測儀........19
3.3.6場發射掃描式電子顯微鏡（Field Emission-Scanning Electron Microscope；FE-SEM） ........20
第四章 結果與討論........36
4.1氫化碳氧化矽薄膜製作與薄膜熱穩定性分析........36
4.1.1高溫熱退火之氫化碳氧化矽薄膜特性分析........37
4.1.2在不同溫度之熱退火條件下的氫化碳氧化矽薄膜材料特性分析........40
4.2不同製程溫度製備之氫化碳氧化矽薄膜特性分析........43
4.2.1 不同製程溫度之氫化碳氧化矽薄膜特性分析........43
4.2.2 不同製程溫度之氫化碳氧化矽薄膜熱穩定性分析........45
4.3氫化碳氧化矽薄膜沉積於奈米球表面的表面特性與熱穩定性分析........49
4.3.1氫化碳氧化矽薄膜沉積於奈米球表面的特性分析........49
4.3.2氫化碳氧化矽沉積於奈米球表面經熱退火後之表面特性分析........53
第五章 結果與未來工作........87
參考文獻........ 89
Extended Abstract........93

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