臺灣博碩士論文加值系統

本研究利用射頻磁控共濺鍍系統，分別利用ZnO與AlN靶材，製作未摻雜氧化鋅薄膜及共濺鍍氮化鋁-氧化鋅薄膜，經由熱處理活化未摻雜氧化鋅與共濺鍍氮化鋁-氧化鋅薄膜，再利用霍爾量測電特性及光激發螢光光譜圖來了解薄膜堆疊特性，電特性可以發現共濺鍍氮化鋁-氧化鋅呈現p型導電型態，接著製備p型氮化鋁-氧化鋅/本質氧化鋅/n型氮化鎵異質接面結構，利用電流-電壓特性發現，p-i-n異質結構的啟動電壓為0.64V，電流比值為1.8，顯示較差的整流特性且有較明顯的穿隧效應。再進一步探討以不同底層n-ZnO與n-GaN來比較，利用光激發螢光光譜圖可以發現，n-GaN磊晶層相較於n-ZnO有明顯的VN缺陷輻射發光峰值，且當i-ZnO分別沉積在n-GaN與n-ZnO上方時，可以發現i-ZnO沉積在n-ZnO之同質結構上有助於能隙邊緣放射，則當p-ZnO分別沉積在i-ZnO/n-GaN及i-ZnO/n-ZnO時，p-i-n同質結構相較於異質結構有較強的能隙邊緣放射，利用電流-電壓特性發現，p-i-n同質結構小於異質結構的電流，推測為p-i-n同質結構的電阻率大於異質結構的電阻率，因此，氧化鋅同質結構所量測出較小的電流。p-i-n同質結構的啟動電壓為1.16V，電流比值為1.23，兩者結構均皆有明顯的載子穿隧效應，因此，為了提高二極體元件操作時注入電子載子在未摻雜氧化鋅層的侷限能力，將共濺鍍AlN-ZnO/i-ZnO介面間加入雙異質結構(Double Heterojuction;DH)，使電子電洞有更大機率侷限在主動區。利用摻雜不同鋁原子含量(20%、40%)，經由熱處理活化摻雜不同鋁原子含量皆可有效抑制氧相關缺陷並且增強NBE能帶邊緣放射，因鋁原子含量40%無法蝕刻，接著針對不同的主動層厚度來製備出p-DH-n異質及同質接面結構，從元件的電流-電壓曲線可以發現隨著主動層厚度下降，啟動電壓與串聯電阻分別隨之下降，且隨著加入的 DH 雙異質結構使得漏電流逐漸減少，因此相較於無 DH 雙異質結構之p-i-n二極體元件有較好的整流特性。

This study utilized a radio frequency magnetron sputtering system to fabricate undoped zinc oxide (ZnO) thin films and co-sputtered aluminum nitride-zinc oxide (AlN-ZnO) films. The activated undoped ZnO and AlN-ZnO films were characterized using Hall measurements and photoluminescence spectroscopy to understand their film stacking properties. The electrical characteristics revealed that the co-sputtered AlN-ZnO films exhibited p-type conductivity. Subsequently, p-type aluminum nitride-zinc oxide/intrinsic zinc oxide/n-type gallium nitride (p-AlN-ZnO/i-ZnO/n-GaN) heterojunction structures were prepared. Current-voltage characteristics showed that the p-i-n heterojunction structure had a turn-on voltage of 0.64V and a current ratio of 1.8, indicating poor rectifying characteristics and significant tunneling effects. Furthermore, the comparison between n-ZnO and n-GaN as bottom layers was investigated. Photoluminescence spectroscopy revealed distinct VN defect-related emission peaks in the n-GaN epitaxial layer compared to n-ZnO. When an i-ZnO layer was deposited on both n-GaN and n-ZnO, it was found that i-ZnO deposition on n-ZnO homojunction structure enhanced the edge emission of the bandgap. Additionally, when a p-ZnO layer was deposited on both i-ZnO/n-GaN and i-ZnO/n-ZnO, the p-i-n homojunction structure exhibited stronger bandgap-edge emission compared to the heterojunction structure. Current-voltage characteristics showed lower current in the p-i-n homojunction structure compared to the heterojunction structure, suggesting that the resistivity of the ZnO homojunction structure was higher, resulting in smaller current. The turn-on voltage of the p-i-n homojunction structure was 1.16V, with a current ratio of 1.23. Both structures exhibited significant carrier tunneling effects. Therefore, to enhance the confinement of injected electron carriers in the undoped ZnO layer during operation, a double heterojunction (DH) structure was incorporated at the AlN-ZnO/i-ZnO interface, allowing for a higher probability of electron-hole confinement in the active region. By doping different aluminum atomic percentages (20%, 40%) and activating them through heat treatment, the defects related to oxygen were effectively suppressed, and the near-band-edge (NBE) emission was enhanced. However, the 40% aluminum atomic percentage could not be etched. Furthermore, p-DH-n heterojunction and homojunction structures were fabricated with different active layer thicknesses. From the current-voltage characteristics of the devices, it was observed that as the active layer thickness decreased, the turn-on voltage and series resistance decreased. The introduction of the DH double heterojunction structure gradually reduced the leakage current, resulting in better rectifying characteristics compared to p-i-n diode devices without the DH structure.

摘要.................i
Abstract.................ii
誌謝................. iv
目錄................. v
表目錄................. vii
圖目錄................. viii
第一章 緒論................. 11
1-1 前言................. 11
1-2 文獻回顧................. 11
1-2-1 氮化鋁-氧化鋅共濺鍍之p型氧化鋅................. 11
1-2-2 異質/同質結構發光二極體................. 2
1-2-3 氧化鋅雙異質結構發光二極體................. 2
1-3 研究動機與目的................. 3
第二章 理論基礎................. 6
2-1 電漿理論................. 6
2-2 射頻磁控濺鍍原理................. 6
2-3 薄膜成核理論................. 7
2-4 薄膜材料特性簡介................. 7
2-4-1 氧化鋅薄膜................. 7
2-4-2 金屬薄膜................. 8
2-4-3 氧化銦錫薄膜................. 8
2-4-4 氮化鋁薄膜................. 8
2-5 金屬與半導體接觸理論................. 9
2-5-1 歐姆接觸理論................. 9
2-5-2 傳輸線模型【56-58】................. 10
第三章 實驗製程方法與步驟................. 19
3-1共濺鍍薄膜製作流程................. 19
3-1-1 基板清洗................. 19
3-1-2 濺鍍系統【57】................. 19
3-1-3鍍膜製作流程................. 20
3-2 傳輸線模型製程流程................. 20
3-3 二極體製程流程................. 21
3-3-1 n型氮化鎵為底層的二極體異質結構................. 22
3-3-2未摻雜氧化鋅為底層的二極體同質結構................. 22
3-4 實驗儀器量測原理................. 22
3-4-1 表面輪廓分析儀................. 22
3-4-2 霍爾量測系統................. 22
3-4-3 光學穿透率量測................. 23
3-4-4 光激發螢光量測【58】【59】................. 23
3-4-5 半導體參數分析儀................. 24
第四章結果與討論................. 34
4-1氧化鋅與氮化鎵異質接面二極體元件製作與特性分析................. 34
4-1-1氧化鋅異質接面結構特性分析................. 34
4-1-2 氧化鋅異質接面二極體元件特性分析................. 36
4-2氧化鋅同質接面二極體元件製作與分析................. 39
4-2-1氧化鋅同質接面之結構特性分析................. 39
4-2-2氧化鋅同質接面二極體元件特性分析................. 40
4-3具雙異質結構之氧化鋅異質與同質二極體元件製作與分析................. 41
4-3-1不同鋁含量之氮化鋁-氧化鋅與雙異質結構光電特性分析................. 42
4-3-2具有不同主動層厚度之氧化鋅雙異質接面結構光電特性分析................. 43
4-3-3 n-GaN/DH/p-AlN-ZnO異質接面之二極體元件特性分析................. 44
4-3-4 n-ZnO/DH/p-AlN-ZnO同質接面之二極體元件特性分析................. 46
第五章 結論與未來工作................. 82
參考文獻 .................84
Extended Abstract................. 90

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