臺灣博碩士論文加值系統

本論文是以反應性射頻磁控濺鍍法(Reactive Radio Frequency Magnetron Sputtering)沉積氧化鋅(Zinc Oxide, ZnO)薄膜於玻璃基板上，以鋅作為濺鍍靶材，並通入氬氣(Argon, Ar)及反應性氣體氧氣(Oxygen, O2)進行反應性濺鍍沉積氧化鋅薄膜，藉由調整氣體總流量、氧氣比例、基板溫度、濺鍍功率、腔體壓力等參數探討反應性濺鍍製程對氧化鋅薄膜之影響，並針對氧化鋅薄膜之結構做深入探討、研究。
藉由調整以上濺鍍參數可以獲得C軸(0 0 2)為最優先取向的氧化鋅薄膜。並使用X光繞射儀、場發射掃描式電子顯微鏡、原子力顯微鏡、表面輪廓儀等儀器對氧化鋅薄膜進行結構分析。
由實驗結果得知，沉積氧化鋅薄膜於玻璃基板之最佳化的濺鍍參數為氣體總流量30sccm、氧氣比例25 %、基板溫度50 °C、濺鍍功率230 W、腔體工作壓力21 mTorr。

In this study, zinc oxide thin film was deposited on glass substrate by reactive Radio Frequency magnetron sputtering. Zinc material was used as the sputtering target. Argon and Oxygen were infused to deposit zinc oxide thin film through reactive Radio Frequency magnetron sputtering.
Then, we discussed the influences of the reactive sputtering process to the zinc oxide thin film by adjusting the total gas flow, oxygen concentration, substrate temperature, sputtering power, and pressure. And finally, we made a deeper discussion and study to the structure of the zinc oxide film.
By adjusting the sputtering parameters above, we could get the preferred orientation of C-axis, which is zinc oxide thin film. We also used X-ray Diffractometer, Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscope (AFM), Alpha step, and other instruments to analyze the structure of zinc oxide thin film.
According to the experimental results, the optimized sputtering parameters for depositing zinc oxide thin films on glass substrates should be 30 sccm of the total gas flow rate, oxygen concentration of 25 %, 50 °C of substrate temperature, 230 W of sputtering power, and 21 mTorr of pressure.

摘 要 I
ABSTRACT II
誌謝 III
目錄 IV
圖目錄 VII
表目錄 X
第一章 緒論 1
1.1 前言 1
1.2 研究動機 2
第二章 理論基礎 3
2.1 氧化鋅的性質 3
2.2 濺鍍技術 6
2.2.1 電漿原理 6
2.2.2 平均自由路徑(Mean Free Path, MFP) 9
2.2.3 磁控濺鍍原理 10
2.2.4 反應性磁控濺鍍法（Reactive Magnetron Sputtering） 11
2.2.5 薄膜沉積過程 12
2.3 X光繞射儀(X-ray Diffractometer) 13
2.3.1 低掠角X光繞射儀(Grazing Incidence X-Ray Diffraction) 14
2.4 場發射掃描式電子顯微鏡 15
2.5 原子力顯微鏡(Atomic Force Microscope, AFM) 17
2.6 表面輪廓儀(Alpha Step） 19
2.7 紫外光/可見光光譜儀(UV-Vis Spectrophotometer) 20
第三章 實驗方法與步驟 21
3.1 實驗流程 21
3.2 基板清洗 22
3.3 濺鍍薄膜 24
3.4 薄膜品質分析 25
3.4.1 場發射掃描式電子顯微鏡 25
3.4.2 X光繞射儀 26
3.4.3 原子力顯微鏡 26
3.4.4 表面輪廓儀 26
3.4.5 紫外光/可見光光譜儀 27
第四章 結果與討論 28
4.1 氣體總流量調整 28
4.1.1 氣體總流量與薄膜沉積速率關係 29
4.1.2 薄膜表面粗糙度分析 30
4.1.3 表、剖面形貌變化分析 32
4.1.4 XRD繞射分析 35
4.2 氧氣比例調整 36
4.2.1 氧氣比例與薄膜沉積速率關係 37
4.2.2 薄膜表面粗糙度分析 38
4.2.3 表、剖面形貌變化分析 40
4.2.4 XRD繞射分析 43
4.3 基板溫度 44
4.3.1 薄膜表面粗糙度分析 45
4.3.2 表、剖面形貌變化分析 48
4.3.3 XRD繞射分析 53
4.4 濺鍍功率 54
4.4.1 濺鍍功率與薄膜沉積速率關係 55
4.4.2 薄膜表面粗糙度分析 56
4.4.3 表、剖面形貌變化分析 59
4.4.4 XRD繞射分析 62
4.5 腔體工作壓力 63
4.5.1 腔體工作壓力與薄膜沉積速率關係 64
4.5.2 薄膜表面粗糙度分析 65
4.5.3 表、剖面形貌變化分析 68
4.5.4 XRD繞射分析 71
4.6 氧化鋅薄膜光學特性分析 73
第五章 結論 74
第六章 參考文獻 75

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