本研究利用簡易的低溫水熱法合成，在95C下製備鎵摻雜氧化鋅奈米結構，並且用於製造紫外光感測器。本研究以改變鎵摻雜濃度，探討其結構變化及特性穩定性，主要研究可分為以下兩部分：

第一部分：首先使用射頻磁控濺鍍機在玻璃基板上濺鍍100nm氧化鋅薄膜作為晶種層，再利用水熱法配置硝酸鋅、四氮六甲圜(HMTA)以及不同濃度之硝酸鎵，生長鎵摻雜氧化鋅奈米結構，最後使用快速熱退火在400C下進行熱處理。將試片透過場發射掃描式電子顯微鏡(FE-SEM)、能量散佈分析儀(EDS)、穿透式電子顯微鏡(TEM)、X光繞射頻譜圖分析(XRD)及螢光光譜儀(PL)，進行生長結構、材料成分、晶格缺陷、結晶度以及光學等等分析。

第二部分：使用黃光微影技術，在玻璃基板上定義成長區塊並且鍍上金屬銀作為電極，再以水熱法在具有氧化鋅晶種層試片上生長銀摻雜氧化鋅奈米結構，而後進行熱退火處理。最後將元件透過量測分析光暗電流比以及光響應值分析。

In this study, Gallium (Ga) doped zinc oxide (ZnO) nanostructures were synthesized by a simple and inexpensive hydrothermal method at 95 C, and used to UV sensor. In order to change the concentration of Ga doping and to explore its structural changes and characteristics of stability, the main research can be divided into the following two parts:

Part I: First, 100 nm ZnO film was deposited on glass substrates by radio frequency magnetron sputtering (RF) machine as seed layer. The nanostructures of Ga-doped ZnO were grown by hydrothermal method with zinc acetate, C₆H₁₂N₄ (HMTA) and Ga acetate at different concentrations. Finally, the nanostructures were annealed at 400 C by rapid thermal annealing. The growth structure, material composition, lattice defects, crystallinity and optics of the samples were analyzed by FE-SEM, EDS, TEM, XRD and PL.

Part II: The patterens were defined on glass substrates by photolithography, and titanium was deposited as electrodes. Then the Ga doped ZnO nanostructures were grown on the samples with ZnO seed layer by hydrothermal method, and then heat-treated. Finally, the light-dark current ratio and the light response value are analyzed by measuring a TRlAX 180 system with a 300W xenon arc lamp light source and a Keithley 2400 semiconductor system

摘要...i
Abstract....... ii
誌謝... iii
目錄... iv
表目錄... vi
圖目錄... vii
第一章 緒論... 1
1-1研究背景... 1
1-2研究動機... 1
1-3文獻回顧... 2
第二章 理論基礎... 3
2-1 電漿(plasma)成分及原理... 3
2-2 薄膜成長原理... 5
2-3 半導體(Semiconductor)簡介... 6
2-3-1 氧化鋅(Zinc oxide)材料結構與特性... 6
2-3-2 氧化鋅應用領域... 7
2-3-3 氧化鋅發光機制... 8
2-3-4 氧化鋅光感測器原理... 8
2-4 物理氣相沉積(Physical Vapor Desposition)... 10
2-4-1 物理氣相沉積機制... 10
2-4-2 濺鍍(Sputtering)原理... 10
2-4-3 射頻磁控濺鍍（RF magnetron Sputter）優點... 10
2-5 水熱法... 11
2-5-1 水熱法原理... 11
2-5-2 水熱合成優點... 11
2-6 氧化鋅奈米結構製備... 11
2-7成長鎵摻雜氧化鋅奈米結構之反應流程... 12
第三章 實驗步驟及方法... 13
3-1 實驗基本架構與流程... 13
3-1-1 實驗架構... 13
3-1-2 實驗流程... 13
3-2 實驗儀器與藥品... 15
3-3 實驗設備... 17
3-3-1 射頻磁控濺鍍系統(Radio frequency magnetron sputtering)... 17
3-3-2 場發射掃描式電子顯微鏡(FE-SEM)... 18
3-3-3 穿透式電子顯微鏡(TEM)... 19
3-3-4 X光繞射分析儀(XRD)... 20
3-3-5 光激發螢光光譜儀(PL)... 21
第四章 結果與討論... 22
4-1 鎵摻雜氧化鋅製備方法... 22
4-2 鎵摻雜氧化鋅SEM分析... 23
4-3 鎵摻雜氧化鋅EDX分析... 28
4-4 鎵摻雜氧化鋅TEM分析... 32
4-5 鎵摻雜氧化鋅XRD分析... 35
4-6 鎵摻雜氧化鋅奈米PL分析... 37
4-7 鎵摻雜氧化鋅元件量測... 39
第五章 實驗結論... 46
5-1 結論... 46
5-2 未來展望... 46
參考文獻... 47
Extended Abstract... 49
Abstract... 49

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