近幾年來，切換式電源的發展趨勢朝向效率高、重量輕、體積小的設備來發展，系統設計者及產品製造商均特別以輕、薄、短、小來做為產品的特色。然而，傳統矽開關元件因為製程材料關係，在切換速度上有它的物理限制，導致產品在設計上有相對限制。有了氮化鎵功率元件出現後，因為材料及製程的改變，突破了傳統矽開關100kHz切換頻率限制，甚至能高達1MHz切換頻率，為電力電子產品帶來新領域的設計挑戰。為了實現高效率、切換速度快、高效率的目標。本論文利用Transphorm氮化鎵功率元件設計一個200VDC/48VDC，最大輸出電流10A且切換頻率250kHz的隔離型半橋轉換器。

隨著切換頻率提高，PCB電路板上的寄生電感(Parasitic inductance)和寄生電容(Parasitic Capacitance)會產生振鈴現象(Ringing)，不良的PCB布局會增加振鈴現象對氮化鎵造成損壞以及高dv/dt切換帶來米勒效應(Miller Affect)。而米勒效應是透過氮化鎵開關的寄生電容在閘極(Gate)腳位上產生電壓，造成氮化鎵該關閉時卻導通，使得電路誤導通因而損毀。此外高切換頻率的電路也更考驗量測儀器，因為不同儀器的寄生電容對實測結果會有誤差。本論文會以模擬及實際電路波型來驗證電路在高頻切換下的米勒效應，以及不同的探棒對實際電路的量測誤差值。

In recent years, the development trend of switching power supplies has evolved toward high-efficiency, light-weight, and small-sized devices. System designers and product manufacturers have particularly adopted light, thin, short, and small products as their features. However, traditional silicon switching elements have their physical limitations in switching speed due to the process material relationship, resulting in relatively limited product design. After the emergence of gallium nitride devices, because of changes in materials and processes, it has broken the 100kHz switching frequency limit of traditional silicon switches, and can even reach a switching frequency of 1MHz, bringing new areas of design challenges to power electronics products. This paper uses Transphorm GaN power components to design an isolated half-bridge converter with 200VDC/48VDC, maximum output current of 10A and switching frequency of 250kHz.

As the switching frequency increases, parasitic inductance and parasitic capacitance on the PCB circuit board will cause ringing, and poor PCB layout will increase the ringing damage to gallium nitride and the Miller effect caused by high dv/dt switching. The Miller effect is to generate a voltage on the gate pin through the parasitic capacitance of the gallium nitride switch, which causes the gallium nitride to be turned on when it is turned off, causing the circuit to be mistakenly turned on and damaged. In addition, the circuit with high switching frequency also tests the measuring instrument, because the parasitic capacitance of different instruments will have errors on the actual measurement results. This paper will use simulation and actual circuit waveforms to verify the Miller effect of the circuit under high-frequency switching, and the measurement error value of different probes on the actual circuit.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vi
圖目錄...vii
第一章 緒論...1
1.1研究動機與目的...1
1.2研究方法...1
1.3本論文之貢獻...1
1.4論文大綱...1
第二章 氮化種類及驅動注意...2
2.1 氮化鎵介紹...2
2.2 氮化鎵種類...3
2.2.1 Transphorm...3
2.2.2 GaN Systems...4
2.2.3 EPC...6
2.2.4 Navitas...6
2.3 自舉式驅動電路...8
2.4 驅動電路上的米勒效應...10
2.5 被動探棒與主動探棒比較...12
第三章 隔離型半橋轉換器架構及分析...14
3.1 隔離型半橋轉換器基本架構...14
3.2 隔離型半橋轉換器參數設計...16
3.2.1 變壓器參數設計...16
3.2.2 輸出電感設計...17
3.2.3 輸出二極體設計...20
3.2.4 輸出電容CF設計...20
3.2.5 隔直電容C3設計...21
3.2.6 隔直電容C3與輸出電感LF共振設計...21
第四章 實驗結果與分析...22
4.1 隔離型半橋電路模擬分析...22
4.1.1 25%負載率模擬波形...22
4.1.2 50%負載率模擬波形...24
4.1.3 75%負載率模擬波形...25
4.1.4 100%負載率模擬波形...26
4.2 隔離型半橋電路實測結果...28
4.2.1 25%負載率波形...28
4.2.2 50%負載率波形...29
4.2.3 75%負載率波形...30
4.2.4 100%負載率波形...31
4.3 隔離型半橋電路效率...33
第五章 結論與未來展望...35
5.1 結論...35
5.2 未來展望...35
參考文獻...36
Extended Abstract...39

[1]H.-Z. Xu, "氮化鎵異質結構場效電晶體製作與特性分析," National Central University, 2001.
[2]AN018 GaN Integration for Higher DC-DC Efficiency and Power Density-tw
https://epc-co.com/epc/Portals/0/epc/documents/product-training/AN018
[3]王御旬-探討電容之等效串聯電阻及電感對切換式電源供應器的影響。國立虎尾科技大學電機工程系碩士班碩士論文（2017）。
[4]AN-0003 Printed Circuit Board Layout and Probing for GaN Power Switche
https://www.transphormusa.com/en/document/printed-circuit-board-layout-probing-gan-fets
[5]D. Reusch and J. Strydom, "Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter," in IEEE Transactions on Power Electronics, vol. 29, no. 4, pp. 2008-2015, April 2014.
[6]W. Kangping et al., "An optimized layout with low parasitic inductances for GaN HEMTs based DC-DC converter," 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), Charlotte, NC, 2015, pp. 948-951.
[7]K. Wang, L. Wang, X. Yang, X. Zeng, W. Chen and H. Li, "A Multiloop Method for Minimization of Parasitic Inductance in GaN-Based High-Frequency DC–DC Converter," in IEEE Transactions on Power Electronics, vol. 32, no. 6, pp. 4728-4740, June 2017.
[8]F. Luo, Z. Chen, L. Xue, P. Mattavelli, D. Boroyevich and B. Hughes, "Design considerations for GaN HEMT multichip halfbridge module for high-frequency power converters," 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014, Fort Worth, TX, 2014, pp. 537-544.
[9]D. J. N. a. I. Graovac, "Parasitic Turn-on of Power MOSFET–How to avoid it," 2008
[10]F. Semiconductor, "Active Miller Clamp Technology," ed, 2013.
[11]J. Boehmer, J. Schumann and H. Eckel, "Effect of the miller-capacitance during switching transients of IGBT and MOSFET," 2012 15th International Power Electronics and Motion Control Conference (EPE/PEMC), Novi Sad, 2012.
[12]F. Xue, W. Zhang and C. Zhou Ryan, "Gate Driver Design Consideration and Optimization for Noninverting Buck-Boost Converters," PCIM Asia 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Shanghai, China, 2019, pp. 1-7.
[13]Z. Huang, F. Recht, and Y. J. T. I. Wu, Goleta, CA, USA, Appl. Note AN-003, "Printed Circuit Board Layout and Probing for GaN Power Switches," 2014.
[14]GN003 Measurement Techniques for High-Speed GaN E-HEMTs
https://gansystems.com/design-center/application-notes/,2019
[15]A. Sarnowska and J. Rąbkowski, "Hard and soft switching operation of the half-bridge based on 900V SiC MOSFETs," IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, Florence, 2016, pp. 7167-7172
[16]M. Zdanowski and J. Rąbkowski, "Operation modes of the GaN HEMT in high-frequency half-bridge converter," 2016 Progress in Applied Electrical Engineering (PAEE), Koscielisko-Zakopane, 2016, pp. 1-6.
[17]F. Xue, R. Yu and A. Q. Huang, "A 98.3% Efficient GaN Isolated Bidirectional DC–DC Converter for DC Microgrid Energy Storage System Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 11, pp. 9094-9103, Nov. 2017.
[18]Y. Guan, X. Hu, Y. Wang, W. Wang and D. Xu, "A High Performance Isolated High Frequency Converter Based on GaN HEMT," 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 2018, pp. 276-280.
[19]M. Zdanowski, K. Kozdroj and J. Rabkowski, "High-frequency isolated DC-DC converter with GaN HEMTs," 2017 Progress in Applied Electrical Engineering (PAEE), Koscielisko, 2017, pp. 1-6.
[20]Chellappan, Salil. "Design considerations of GaN devices for improving power-converter efficiency and density." Application Notes (2017).
[21]F. Recht, Z. Huang, and Y. J. N. a. Wu, "Characteristics of Transphorm GaN Power Switches," 2019
[22]AN004 Designing Hard-switched Bridges with GaN
https://www.transphormusa.com/en/design-resources/2019
[23]AN008 Drain Voltage and Avalanche Ratings for GaN FETs
https://www.transphormusa.com/en/design-resources/2019
[24]AN011 PQFN GaN FETs Paralleling PCB Application Note
https://www.transphormusa.com/en/design-resources/2019
[25]GN001 How to drive GaN Enhancement mode HEMT
https://gansystems.com/design-center/application-notes/2019
[26]GN006 SPICE model for GaN HEMT usage guidelines and example
https://gansystems.com/design-center/application-notes/2019
[27]GN004 Design considerations of paralleled GaN HEMT
https://gansystems.com/design-center/application-notes/2019
[28]A. Lidow, J. B. Witcher, and K. J. P. G. T. Smalley, "Enhancement Mode Gallium Nitride (eGaN TM) FET Characteristics under Long Term Stress," 2011
[29]WP007-eGaN® FET Electrical Characteristics
https://epc-co.com/epc/DesignSupport,2019
[30]U. E. M. GaN-on-Silicon, "Using Enhancement Mode GaN-on-Silicon Power FETs (eGaN® FETs),"2019
[31]M. de Rooij and J. J. E. a. n. A. I. Strydom, "Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications," 2014.
[32]M. J. Mnati, A. Van den Bossche and J. M. V. Bikorimana, "Design of a half-bridge bootstrap circuit for grid inverter application controled by PIC24FJ128GA010," 2016 IEEE International Conference on Renewable Energy Research and Applications (ICRERA), Birmingham, 2016, pp. 85-89,
[33]A. N. AN and F. Semiconductor, "Design and Application Guide of Bootstrap Circuit for High-Voltage Gate-Drive IC," September, 2018.
[34]E. P. CONVERSION, "Accurately Measuring High Speed GaN Transistors,"2019
[35]Tom Neville, "以隔離方式解決差動式量測誤差的常見來源",2019
https://tw.tek.com/document/technical-brief/isolation-addresses-common-sources-differential-measurement-error
[36]C. W. T. McLyman and H. B. C. T. D. Specification, "Designing a Half Bridge Converter Using a CoreMaster E2000Q Core," ed, 2009.
[37]H. Choi, "Analysis and Design of LLC Resonant Converter with Integrated Transformer," APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition, Anaheim, CA, USA, 2007, pp. 1630-1635.
[38]H. de Groot, E. Janssen, R. Pagano and K. Schetters, "Design of a 1-MHz LLC Resonant Converter Based on a DSP-Driven SOI Half-Bridge Power MOS Module," in IEEE Transactions on Power Electronics, vol. 22, no. 6, pp. 2307-2320, Nov. 2007,
[39]吳義利，” 切換式電源轉換器：原理與實用設計技術（實例設計導向）” 文笙書局，中華民國107年10月
[40]梁適安，’’交換式電源供給器之理論與實務設計’’ 全華書局，中華民國108年08月