本研究探討蒸鍍鋅摻雜二氧化鉬及濺鍍氧化鍶銅對網印式單晶矽太陽能電池光電特性之影響，蒸鍍鋅摻雜二氧化鉬用來改善二氧化鉬與空氣接觸的退化特性，其變數包含二氧化鉬上堆疊不同鋅之厚度、曝露大氣時間、二氧化鉬上堆疊不同鋅/銀比率、不同厚度的摻鋅氧化鉬及氧化鉬/摻鋅氧化鉬之各種堆疊方式，至於濺鍍氧化鍶銅是利用其能帶特性讓電洞通過並阻擋電子用來降低電子電洞對在矽介面復合，其參數為調整濺鍍功率及時間、改變濺鍍工作壓力、研究濺鍍氬氣流量與濺鍍電極效應，最後利用X射線光電子能譜(XPS)、紫外光光電子光譜儀(UPS)、UV/VIS/IR光譜儀、穿透式電子顯微鏡(TEM)及能量色散X射線譜(EDX)分析氧化鍶銅各種材料特性。
蒸鍍鋅摻雜二氧化鉬的實驗結果顯示，在結構為氧化鉬/摻鋅氧化鉬且氧化鉬厚度為4.4 nm、摻鋅氧化鉬的厚度為0.6 nm、破真空時間為10分鐘與銀的厚度為500 nm，有最佳的開路電壓0.64 mV、短路電流38.98 mA/cm2、填充因子79.58 %、串聯電阻1.83 Ω-cm2及光電轉換效率 20.00 %，濺鍍氧化鍶銅的實驗結果顯示，當濺鍍氧化鍶銅時，其濺鍍功率為12 W、濺鍍時間為1.5 min、工作壓力為12 mtorr、氬氣流量12 sccm及銀電極厚度為660 nm，有最佳的開路電壓0.62 mV、短路電流36.55 mA/cm2、填充因子82.49 %、串聯電阻1.52 Ω-cm2及光電轉換效率18.67%。

In this work, the effects of evaporated zinc-doped molybdenum oxide (MoO2)and sputtered strontium copper oxide on photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SMSSCs)were investigated. The degraded properties of air ambient for MoO2 were by evaporated zinc-doped MoO2. The parameters, including various thicknesses of Zn and MoO2 stacked films, air ambient effects, ratio of Zn/Ag deposited on MoO2, stacked ratio of MoO2/MoO2:Zn, were addressed. Regarding to the study of SrCuO2, the recombination of electron-hole pairs at silicon surface was reduced by the energy band properties of SrCuO2. The parameters, including power, time, working pressure, argon flow, and electrode, were investigated. Finally, the material characteristics of SrCuO2 were analyzed by the X-ray Photoelectron Spectroscopy (XPS), UV photoelectron spectroscopy (UPS), UV/VIS-IR Spectroscopy, Transmission Electron Microscopy (TEM) and Energy-Dispersive X-ray Spectroscopy (EDS), respectively.
The results indicate that the SMSSCs with the conversion efficiency (CE)of 20.0%, open circuit voltage of 640 mV, short circuit current of 38.98 mA/cm2, fill factor of 79.58%, series resistance of 1.83 Ω-cm2, were demonstrated by MoO2/MoO2:Zn at a ratio of 4.4/0.6 nm, breaking vacuum time of 10 mins, and silver electrode of 500 nm. Furthermore, the experimental results show that the SMSSCs with the CE of 18.67%, open circuit voltage of 620 mV, short circuit current of 36.55 mA/cm2, fill factor of 82.49%, and series resistance of 1.52 Ω-cm2, were presented by the plasma power of 12 W, sputtering time of 1.5 min, the working pressure of 12 mtorr, the argon flow rate of 12 sccm, and the silver electrode of 660 nm.

摘要.....i
Abstract.....ii
謝誌.....iii
目錄.....iv
表目錄.....vii
圖目錄.....viii
第一章 緒論.....1
1-1 射極鈍化背接觸太陽能電池之文獻回顧.....1
1-2 氧化鉬電洞選擇性材料應用於太陽能電池之文獻回顧.....1
1-3 氧化鉬摻鋅之文獻回顧.....2
1-4 氧化鍶銅之文獻回顧.....4
1-5 研究動機.....5
1-6 論文架構.....5
第二章 實驗流程與特性量測.....6
2-1 蒸鍍鋅摻雜二氧化鉬及濺鍍氧化鍶銅對網印式單晶矽太陽能電池光電特性之影響之前段實驗流程.....6
2-1-1 對矽晶圓進行RCA清洗以及將自然氧化層(Native oxide)去除.....6
2-1-2 使用鹼性的蝕刻液對矽晶圓表面進行糙化(Texture).....7
2-1-3 使用高溫爐管對糙化完的矽晶圓基板進行磷擴散形成n+射極層.....7
2-1-4 使用混合酸蝕刻液去除掉擴散完所形成的磷玻璃(PSG)同時做邊緣去除(Edge isolation)和背表面拋光(Polished).....7
2-1-5 利用電漿增強型化學氣相沉積系統(Plasma Enhance Chemical Vapor Deposition, PECVD)將氮化矽(SiNx)沉積在n+射極層上.....7
2-1-6 使用網印機將銀膠網印 (Screen-printing)至正表面.....7
2-1-7 使用燒結爐將銀電極刺穿氮化矽(SiNx).....8
2-1-8 使用雷射機將矽晶圓切割成面積為20 × 20 mm2.....8
2-1-9 在正面旋塗兩層抗蝕刻阻擋層(Spin coated polymer)且分別烤乾.....8
2-1-10 浸泡氫氟酸水溶液蝕刻背表面的自然氧化層(Removed native oxide by DHF).....8
2-2 蒸鍍鋅摻雜或堆疊二氧化鉬太陽能電池光電特性之研究之後段製程.....8
2-2-1 熱蒸鍍背面二氧化鉬顆粒.....8
2-2-2 熱蒸鍍背面鋅金屬顆粒.....9
2-2-3 熱蒸鍍背面摻鋅二氧化鉬.....9
2-2-4 破真空(Break Vacuum, BV).....9
2-2-5 熱蒸鍍背面銀電極.....10
2-2-6 二氧化鉬上堆疊不同鋅之厚度與曝露大氣時間對網印式單晶矽太陽能電池光電特性之影響.....10
2-2-7 二氧化鉬上堆疊不同鋅/銀比率與曝露大氣時間對網印式單晶矽太陽能電池光電特性之影響.....10
2-2-8 不同厚度的摻鋅氧化鉬對網印式單晶矽太陽能電池光電特性之影響.....10
2-2-9 探討氧化鉬與摻鋅氧化鉬之各種堆疊方式對網印式單晶矽太陽能電池光電特性之影響.....10
2-3 濺鍍氧化鍶銅對網印式單晶矽太陽能電池光電特性之研究之後段製程 11
2-3-1 背面濺鍍氧化鍶銅.....11
2-3-2 背面濺鍍銅電極.....11
2-3-3 背面濺鍍銀電極.....11
2-3-4 調整濺鍍功率及時間對具氧化鍶銅網印式太陽能電池光電轉換效率影響.....11
2-3-6 改變濺鍍工作壓力對具氧化鍶銅網印式太陽能電池光電轉換效率之影響.....12
2-3-7 研究濺鍍氬氣流量對具氧化鍶銅網印式太陽能電池光電轉換效率之影響.....12
2-3-8 濺鍍銀及銅電極對具氧化鍶銅網印式太陽能電池光電轉換效率之影響.....12
2-4 光伏元件的電性及物性量測.....12
2-4-1 太陽能電池電流-電壓特性量測( I-V measure ).....12
2-4-2 X射線光電子能譜(X-ray Photoelectron Spectroscopy, XPS).....12
2-4-3 紫外光光電子光譜儀(UV Photoelectron Spectroscopy, UPS).....13
2-4-4 紫外光/可見光/近紅外光 分光光譜儀(UV/Visible/IR Spectrophotometer, UV/VIS/IR).....13
2-4-5 穿透式電子顯微鏡 (Transmission Electron Microscope, TEM).....13
2-4-6 外部量子效率 (External Quantum Efficiency, EQE)量測.....13
第三章 蒸鍍鋅摻雜或堆疊二氧化鉬太陽能電池光電特性之研究.....31
3-1 二氧化鉬上堆疊不同鋅之厚度與曝露大氣時間對網印式單晶矽太陽能電池光電特性之影響.....31
3-1-1 二氧化鉬上堆疊不同鋅之厚度與曝露大氣時間對網印式單晶矽太陽能電池光電特性之影響之電流-電壓量測之分析.....31
3-1-2 結論.....32
3-2 二氧化鉬上堆疊不同鋅/銀比率與曝露大氣時間對網印式單晶矽太陽能電池光電特性之影響.....33
3-2-1 二氧化鉬上堆疊不同鋅/銀比率與曝露大氣時間對網印式單晶矽太陽能電池光電特性之影響之電流-電壓量測之分析.....33
3-2-2 結論.....34
3-3 不同厚度的摻鋅氧化鉬對網印式單晶矽太陽能電池光電特性之影響.....34
3-3-1不同厚度的摻鋅氧化鉬對網印式單晶矽太陽能電池光電特性之影響之電流-電壓量測之分析.....34
3-3-2 結論.....35
3-4 探討氧化鉬與摻鋅氧化鉬之各種堆疊方式對網印式單晶矽太陽能電池光電特性之影響.....35
3-4-1 探討氧化鉬與摻鋅氧化鉬之各種堆疊方式對網印式單晶矽太陽能電池光電特性之影響之電流-電壓量測之分析.....35
3-4-2 結論.....36
第四章 濺鍍氧化鍶銅對網印式單晶矽太陽能電池光電特性之研究.....49
4-1 調整濺鍍功率及時間對具氧化鍶銅網印式太陽能電池光電轉換效率影響.....49
4-1-1調整濺鍍功率及時間對具氧化鍶銅網印式太陽能電池光電轉換效率影響之電流-電壓量測之分析.....49
4-1-2 結論.....51
4-2 改變濺鍍工作壓力對具氧化鍶銅網印式太陽能電池光電轉換效率之影響.....51
4-2-1改變濺鍍工作壓力對具氧化鍶銅網印式太陽能電池光電轉換效率之影響之電流-電壓量測之分析.....51
4-2-2 結論.....52
4-3 研究濺鍍氬氣流量對具氧化鍶銅網印式太陽能電池光電轉換效率之影響.....52
4-3-1研究濺鍍氬氣流量對具氧化鍶銅網印式太陽能電池光電轉換效率之影響之電流-電壓量測之分析.....52
4-3-2 結論.....53
4-4 濺鍍銀及銅電極對具氧化鍶銅網印式太陽能電池光電轉換效率之影響.....53
4-4-1濺鍍銀及銅電極對具氧化鍶銅網印式太陽能電池光電轉換效率之影響之電流-電壓量測之分析.....53
4-4-2 結論.....54
4-5氧化鍶銅的材料分析.....54
4-5-1 XPS.....54
4-5-2 UPS.....54
4-5-3 UV/VIS/NIR.....54
4-5-4 TEM.....54
4-5-5 EQE.....54
第五章 總結論與未來展望.....71
5-1 總結論.....71
5-2 未來展望.....71
參考文獻.....72
Extended Abstract.....75

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