臺灣博碩士論文加值系統

目前，白光發光二極體(White light-emitting diode, WLED)在顯示器白光背光源中被廣泛地使用。而量子點(Quantum dots, QDs)是一種具有潛力的螢光材料，可以取代使用於WLED中的螢光粉。量子點中的無機鈣鈦礦量子點(PQD)，因具有窄半高寬和高量子效率，所以顯示器能夠擁有更廣的色域範圍，使得色彩細緻且飽和。因此，PQD在廣色域顯示器的需求上更具有競爭力。
不過，PQD在環境中例如光、熱及長期放置的穩定性並不理想。文獻中有利用矽酸四甲酯(TMOS)水解後在量子點表面包覆SiO2，也有利用相變化使CsPbBr3溶解，再結晶形成Cs4PbBr6晶體。在先前研究中發現12碳的氨基後處理可以促使CsPbX3產生相變化，但是具更短碳鏈的胺基如何影響CsPbX3卻寥寥無幾，此外，由於TMOS水解產生的SiO2包覆讓QY下降且粒徑過大，單純的胺類只能促使相變化，而單純的矽酸四甲酯只能形成SiO2包覆，選擇同時具有胺基和Si-O鍵的3-氨基丙基三乙氧基矽烷(APTES)，能否同時促使相變又有SiO2包覆，一次性提升QY並解決穩定性不佳的問題為本研究的動機。因此，本研究先利用不同碳鏈長度的胺類對PQD進行後處理，探討碳鏈對相變化速率的影響；另外在製程中直接使用3-氨基丙基三乙氧基矽烷(APTES)，利用短碳鏈之胺基鈍化PQD表面缺陷，並將PQD表面包覆SiO2，以提高效率及穩定性。
將合成完後量子點添加不同碳鏈長度之胺類(PA、DA、DDA)，可使量子點的效率與穩定性提升，主因為量子點由CsPbBr3¬部分相變化為高能隙Cs4PbBr6相，而短碳鏈之PA與量子點的反應速度較為快速，相對量子效率由GQD之150 %提高至GQD-PA0.2的199 %；經150 oC加熱30分鐘後，GQD的相對量子效率下降82 %，而GQD-DDA1.4的相對量子效率由下降70 %，經60天放置後，GQD下降33 %，而GQD-DDA1.4僅下降17 %。
此外在合成過程中使用具氨基與矽氧鍵之APTES為表面配體，所得之量子點不僅分散均勻且無沉降現象，經過TEM分析，多數形貌分散包覆而非團聚包覆。GQDO的相對量子效率為138 %，GQDA5相對量子效率達211 %。經熱穩定性、光穩定性與30天常溫暗箱放置穩定測試，GQDO分別為下降73 %、40 % (138降至87 %)與11 % (138降至123 %)，而GQDA7僅下降46 %、17 % (191降至159 %)與5 % (191降至181 %)，顯示此種形貌有助於提升量子效率與具有較佳的穩定性。GQDA5/KSF-LED0.34之元件效率為30 lm/W，NTSC為135 %及Rec. 2020為101 %。與目前文獻上相比具有最佳NTSC，可推進PQD在顯示器領域的應用。

Currently, white light-emitting diodes (WLEDs) are widely used in the backlighting of displays. Quantum dots (QDs) are a promising fluorescent material that can potentially replace the phosphors used in WLEDs. Among them, inorganic perovskite quantum dots (PQDs) stand out due to their narrow emission spectra and high quantum efficiency, allowing displays to achieve a broader color gamut, resulting in more refined and vibrant colors. Consequently, PQDs are more competitive for applications in wide color gamut displays.
However, the PQD exhibit suboptimal stability in environmental conditions such as light, heat, and prolonged exposure. In the literature, approaches have been explored to address this issue, including the encapsulation of PQD surfaces with SiO2 through the hydrolysis of tetramethyl orthosilicate (TMOS), as well as the dissolution of CsPbBr3 QDs through a phase transition, followed by recrystallization to form Cs4PbBr6 crystals. Previous research has demonstrated that post-treatment with a 12-carbon amino compound can induce a phase transition in CsPbX3 QDs. However, the impact of amino compounds with shorter carbon chains on CsPbX3 remains scarcely investigated. Additionally, the SiO2 encapsulation generated from the hydrolysis of TMOS leads to reduced quantum yield (QY) and excessively large particles. While pure amine compounds only facilitate the phase transition, and pure tetramethyl orthosilicate exclusively forms SiO2, the utilization of 3-aminopropyltriethoxysilane (APTES), which possesses both amino and Si-O functional groups, raises the question of whether it can simultaneously induce a phase transition and facilitate SiO2 encapsulation. This dual-action approach aims to enhance QY and address the issue of poor stability. Therefore, in this study, various amine compounds with differing carbon chain lengths were employed for post-treatment of PQD to investigate the influence of carbon chain length on the phase transition rate. Additionally, APTES was directly employed in the process to employ the short carbon chain amine groups in passivating PQD surface defects and encapsulating the PQD surface with SiO2, thereby enhancing efficiency and stability.
Furthermore, employing APTES as a surface ligand during the synthesis process led to QDs that exhibited not only uniform dispersion but also remained free from sedimentation. TEM analysis revealed predominantly dispersed encapsulation rather than agglomerated encapsulation. The relative quantum efficiency of GQDO reached 138 %, while GQDA5 achieved an impressive 211 % relative quantum efficiency. Following thermal stability tests, photostability assessments, and a 30-day ambient storage stability test in a dark chamber, GQDO experienced decreases of 73 %, 40 % (from 138% to 87%), and 11% (from 138 % to 123 %), respectively. In contrast, GQDA7 only saw reductions of 46 %, 17 % (from 191 % to 159 %), and 5 % (from 191 % to 181 %), respectively, highlighting that this morphology contributes to enhanced quantum efficiency and improved stability. The device efficiency of GQDA5/KSF-LED0.34 reached 30 lm/W, with an NTSC value of 135 % and Rec. 2020 at 101 %. Compared to existing literature, it exhibited the optimal NTSC performance, which can advance the application of PQDs in the field of displays.

摘要..................................i
Abstract..........................iii
誌謝.................................v
目錄................................vi
表目錄................................ viii
圖目錄............................... ix
第一章 前言..........................1
1.1 LED發展史.............................1
1.2 白光LED背光顯示器.........................4
第二章 文獻回顧...........................7
2.1 量子點........................7
2.1.1 量子侷限效應......................7
2.1.2 量子點表面鈍化..............................7
2.2 鈣鈦礦...............................11
2.2.1 全無機鈣鈦礦........................11
2.2.2 放光機制.........................12
2.2.3 相變化.........................12
2.3 鈣鈦礦之表面鈍化和包覆................26
2.3.1 表面鈍化..............26
2.3.2 表面包覆................27
2.4 研究動機..............35
第三章 實驗方法與步驟...................36
3.1 實驗藥品.........................36
3.2 無機鈣鈦礦量子點製備 .................38
3.2.1 製備Cs-oleate前驅物................38
3.2.2 CsPbBr3量子點(GQD)製備...................38
3.2.3 CsPbBrxI3-x量子點(RQD)製備 ................38
3.2.4 CsPbX3後處理表面改質.............38
3.2.5 APTES表面配體..............38
3.3 SMD白光元件製備...................42
3.4 量子點與元件特性分析...............44
第四章 結果與討論.....................47
4.1 CsPbBrxI3-x量子點表面改質..............47
4.1.1 CsPbBr3胺類後處理之光學性質 ............47
4.1.2 胺類後處理之表面形貌與晶體結構分析................59
4.1.3 胺類後處理之穩定性測試.................63
4.1.4 CsPbBr1.3I1.7胺類後處理之光學性質 ................68
4.1.5 CsPbBr1.3I1.7胺類後處理之表面形貌與晶體結構分析.................74
4.1.6 CsPbBr1.3I1.7胺類後處理之穩定性分析............................ 78
4.2 CsPbBrxI3-x量子點更換表面配體......................... 83
4.2.1 CsPbBr3更換表面配體之光學性質 ......................83
4.2.2 CsPbBr3更換表面配體之表面形貌、晶體結構與表面官能基分析...........86
4.2.3 CsPbBr3更換表面配體之穩定性測試........91
4.2.4 CsPbBrxI1-x更換表面配體之光學性質.................................99
4.3 PQD之白光發光二極體......102
第五章 結論............108
參考文獻....................109
Extended Abstract..............117

[1]H. V. Han, H. Y. Lin, C. C. Lin, W. C. Chong, J. R. Li, K. J. Chen, P. Yu, T. M. Chen, H. M. Chen, K. M. Lau, and H. C. Kuo, 2015, "Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology", Optics Express, 23, 32504-32515.
[2]J. Cho, Y. K. Jung, and J. K. Lee, 2017, "Surface Coating of Gradient Alloy Quantum Dots with Oxide Layer in White-Light-Emitting Diodes for Display Backlights", Langmuir, 33, 13040-13050.
[3]P. D. Cunningham, J. B. Souza, and I. Fedin, 2016, "Assessment of Anisotropic Semiconductor Nanorod and Nanoplatelet Heterostructures with Polarized Emission for Liquid Crystal Display Technology", ACS Nano, 10, 5769-5781.
[4]J. Schneider, T. Dudka, and Y. Xiong, 2018, "Aqueous-Based Cadmium Telluride Quantum Dot/Polyurethane/Polyhedral Oligomeric Silsesquioxane Composites for Color Enhancement in Display Backlights", J. Phys. Chem. C, 122, 13391-13398.
[5]X. Li, Y. Wu, and S. Zhang, 2016, "CsPbX3 Quantum Dots for Lighting and Displays: Roomerature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light-Emitting Diodes", Adv. Funct. Mater., 26, 2435-2445.
[6]T. Taguchi, 2007, "Present Status of Energy Saving Technologies and Future Prospect in White LED Lighting", IEEJ Trans., 3, 21-26.
[7]G. Lozano, S. R. Rodriguez, M. A Verschuuren, and J. G. Rivas, 2016, "Metallic nanostructures for efficient LED lighting", Science & Applications, 5, 16080.
[8]H. J. Round, 1907, "Light-emitting diodes hit the centenary milestone", Electr. World, 19, 309-310.
[9]N. Holonyak, S. W. Ing, R. C. Thomas, and S. F. Bevacqua, 1962, "Double Injection with Negative Resistance in Semi-Insulators", Phys. Rev. Lett., 8, 426.
[10]R. A. Logan, H. G. White, and W. Wiegmann, 1968, "Efficient Green Electroluminescence in Nitrogen‐doped GaP p‐n Junctions", Appl. Phys. Lett., 13, 139-141.
[11]S. Nakamura, T. Mukai, and M. Senoh, 1994, "Candela-class high-brightness InGaN/AIGaN double-heterostructure blue-light-emitting diodes", Appl. Phys. Lett., 64, 1687-1689.
[12]S. Nakamura and T. Mukai, 1997, "Present performance of InGaN-based blue/green/yellow LEDs", SPIE, Vol. 3002.
[13]劉如熹、林群哲，2008，“高演色性白光LED螢光粉材料近況發展”，工業材料雜誌，258期。
[14]J. Cho, J. H. Park, J. K. Kim, and E. F. Schubert, 2017, "White light-emitting diodes: History, progress, and future", Laser Photonics Rev., 11, 1600147.
[15]Y. Ohno, 2005, "Spectral design considerations for white LED color rendering", Opt. Eng., 44, 1-9.
[16]H. S. Jang, Y. H. Won, and D. Y. Jeon, 2009, "Improvement of electroluminescent property of blue LED coated with highly luminescent yellow-emitting phosphors", Appl. Phys. B., 95, 715-720.
[17]J. K. Park, C. H. Kim, and S. H. Park, 2004, "Application of strontium silicate yellow phosphor for white light-emitting diodes", Appl. Phys. Lett., 84, 1647-1649.
[18]Z. Lin, H. Lin, and J. Xu, 2015, "Highly thermal-stable warm W-LED based on Ce:YAG PiG stacked with a red phosphor layer", J. Alloys Compd., 649, 661-665.
[19]J. S. Kim, P. E. Jeon, and Y. H. Park, 2004, "White-light generation through ultraviolet-emitting diode and white-emitting phosphor", Appl. Phys. Lett., 85, 3696-3698.
[20]F. M. Steranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. M. Mach, S. Rudaz, Y. C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, 2002, "High Power LEDs-Technology Status and Market Applications", Phys. Stat. Sol., 194, 380-388.
[21]黃英哲、鄭安茹，2018，“當新印象派大師看到現代顯示器(三)－液晶顯示器(LCD)(二)”，科技大觀園。
[22]黃素真，2002，“液晶顯示器”，科學發展，349期，30-37頁。
[23]李光榮，2017，“2017光電膜材料寧波峰會-量子點膜演講”，三治光電科技。
[24]K. Kalyanasundaram, E. Borgarello, D. Duonghong, and M. Grätzel, 1981, "Cleavage of Water by Visible-Light Irradiation of Colloidal CdS Solutions; Inhibition of Photocorrosion by RuO2", Angew Chem. Inr Ed. Engl., 20, 987-988.
[25]R. Rossetti, S. Nakahara, and L. E. Brus, 1983, "Quantum size effects in the redox potentials, resonance Raman spectra, and electronic spectra of CdS crystallites in aqueous solution", J. Chem. Phys., 79, 1086-1088.
[26]C. B. Murray, D. J. Norris, and M. G. Bawendi, 1993, "Synthesis and characterization of nearly monodisperse CdE (E=sulfur, selenium, tellurium) semiconductor nanocrystallites", J. Am. Chem. Soc., 115, 8706-8715.
[27]M. A. Hines and P. G. Sionnest, 1996, "Synthesis and Characterization of Strongly Luminescing ZnS-Capped CdSe Nanocrystals", J. Phys. Chem., 100, 468-471.
[28]J. H. Oh, H. Kang, M. Ko, and Y. R. Do, 2015, "Analysis of wide color gamut of green/red bilayered freestanding phosphor film-capped white LEDs for LCD backlight", Optics Express, 23, A791-A804.
[29]L. Wang, X. Wang, T. Kohsei, K. I. Yoshimura, M. Izumi, N. Hirosaki, and R. J. Xie, 2015, "Highly efficient narrow-band green and red phosphors enabling wider color-gamut LED backlight for more brilliant displays", Optics Express, 23, 28707-28717.
[30]M. A. Hines and P. G. Sionnest, 1996, "Synthesis and Characterization of Strongly Luminescing ZnS-Capped CdSe Nanocrystals", J. Phys. Chem., 100, 468-471.
[31]L. Piveteau, T. C. Ong, B. J. Walder, D. N. Dirin, D. Moscheni, B. Schneider, J. Bar, L. Protesescu, N. Masciocchi, A. Guagliardi, L. Emsley, C. Coperet, and M. V. Kovalenko, 2018, "Resolving the Core and the Surface of CdSe Quantum Dots and Nanoplatelets Using Dynamic Nuclear Polarization Enhanced PASS-PIETA NMR Spectroscopy", ACS Cent. Sci., 4, 1113-1125.
[32]C. R. Huang and S. R. Chung, 2019, "Improving the quantum yield of ultrasmall size CdSe quantum dots through Zn doping and silica coating", Proc. SPIE, 11089, 110890G-1-8.
[33]J. L. Stein, W. M. Holden, A. Venkatesh, M. E. Mundy, A. J. Rossini, G. T. Seidler, and B. M. Cossairt, 2018, "Probing Surface Defects of InP Quantum Dots Using Phosphorus Kα and Kβ X-ray Emission Spectroscopy", Chem. Mater., 30, 6377-6388.
[34]S. Fuhr, H. J. Yun, N. S. Makarov, H. Li, H. McDaniel, and V. I. Klimov, 2017, "Light Emission Mechanisms in CuInS2 Quantum Dots Evaluated by Spectral Electrochemistry", ACS Photonics, 4, 2425-2435.
[35]V. Wood and V. Bulovic, 2010, "Colloidal quantum dot light-emitting devices", Nano Rev., 1, 1-7.
[36]J. Chatten, K. W. Barnham, B. F. Buxton, N. J. E. Daukes, and M. A. Malik, 2003, "The quantum dot concentrator theory and results", Conf. Phorovolfoic Ener. Conv., 2657-2660.
[37]Y. Yuan, F. S. Riehle, and R. Nitschke, and M. Krüger, 2012, "Highly photoluminescent and photostable CdSe quantum dot-nylon hybrid composites for efficient light conversion applications", Mater. Sci. Eng. B, 177, 245-250.
[38]“量子點科技-了解量子點”, 2022, SAMSUNG display.
[39]J. D. Levine and P. Mark, 1966, "Theory and Observation of Intrinsic Surface States on Ionic Crystals", Phys. Rev., 144, 751.
[40]D. V. Talapin, I. Mekis, and S. Götzinger, 2004, "CdSe/CdS/ZnS and CdSe/ZnSe/ZnS core-shell-shell nanocrystals", J. Phys. Chem. B, 108, 18826-18831.
[41]W. W. Yu, Y. A. Wang, and X. Peng, 2003, "Formation and Stability of Size-, Shape-, and Structure-Controlled CdTe Nanocrystals: Ligand Effects on Monomers and Nanocrystals", Chem. Mater., 15, 4300-4308.
[42]J. S. Owen, E. M. Chan, and H. Liu, 2010, "Precursor conversion kinetics and the nucleation of 117 cadmium selenide nanocrystals", J. Am. Chem. Soc., 132, 18206-18213.
[43]X. Peng, L. Manna, and W. Yang, 2000, "Shape control of CdSe nanocrystals", Nature, 404, 59- 61.
[44]K. Nosea, H. Fujitaa, T. Omataa, S. O. Y. Matsuoa, H. Nakamurab, and H. Maeda, 2007, "Chemical role of amines in the colloidal synthesis of CdSe quantum dots and their luminescence properties", J. Lumin., 126, 21-26.
[45]M. Shekhirev, J. Goza, and J. D. Teeter, 2017, "Synthesis of Cesium Lead Halide Perovskite Quantum Dots", J. Chem. Educ., 94, 1150-1156.
[46]唐立權、黃中垚、張振雄、李明憲，2005，“第一原理計算鈣鈦礦結構三元鹵化物之二階非線性光學係數”，物理雙月刊，卷74, 572-577頁。
[47]M. V. Kovalenko, L. Protesescu, and M. I. Bodnarchuk, 2017, "Properties and potential optoelectronic applications of lead halide perovskite nanocrystals", Science, 358, 745-750.
[48]D. Sapori, M. Kepenekian, and L. Pedesseau, 2016, "Quantum confinement and dielectric profiles of colloidal nanoplatelets of halide inorganic and hybrid organic-inorganic perovskites", Nanoscale, 8, 6369-6378.
[49]H. Huang, L. Polavarapu, and J. A. Sichert, 2016, "Colloidal lead halide perovskite nanocrystals: synthesis, optical properties an applications", NPG Asia Mater., 8, 1-15.
[50]C. K. Moller, 1958, "Crystal Structure and Photoconductivity of Cæsium Plumbohalides", Nature, 182, 1436-1436.
[51]L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, 2015, "Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut", Nano Lett., 15, 3692-3696.
[52]J. Z. Song, J. H. Li, X. M. Li, L. M. Xu, Y. H. Dong, and H. H. Zeng, 2015, " All-Inorganic Perovskite Nanocrystals for High-Efficiency Light Emitting Diodes: Dual-Phase CsPbBr3-CsPb2Br5 Composites ", Adv. Mater., 27, 7162-7167.
[53]X. Zhang, B. Xu, J. Zhang, Y. Gao, Y. Zheng, K. Wang, and X. W. Sun, 2016, " Quantum Dot Light-Emitting Diodes Based on Inorganic Perovskite Cesium Lead Halides (CsPbX3)", Adv. Funct. Mater., 26, 4595-4600.
[54]Q. S. Ma, S. J. Huang, X. M. Wen, M. A. Green, and W. Y. Ho-Baillie, 2016, "Hole Transport Layer Free Inorganic CsPbIBr2 Perovskite Solar Cell by Dual Source Thermal Evaporation", Adv. Energy Mater., 6, 1502202.
[55]Y. Xu, Q. Chen, C. Zhang, R. Wang, H. Wu, X. Zhang, G. Xing, W. Yu, X. Wang, Y. Zhang, and M. Xiao, 2016, "Two-Photon-Pumped Perovskite Semiconductor Nanocrystal Lasers", J. Am. Chem. Soc., 138, 3761-3768.
[56]P. Ramasamy, D. H. Lim, B. Kim, S. H. Lee, M. S. Lee, and J. S. Lee, 2016, "All-inorganic cesium lead halide perovskite nanocrystals for photodetector applications", Chem. Commun., 52, 2067-2070.
[57]G. Nedelcu, L. Protesescu, and S. Yakunin, 2015, "Fast Anion-Exchange in Highly Luminescent Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I)", Nano Lett., 15, 5635-5640.
[58]S. Sun, D. Yuan, Y. Xu, A. Wang, and Z. Deng, 2016, "Ligand-Mediated Synthesis of Shape-Controlled Cesium Lead Halide Perovskite Nanocrystals via Reprecipitation Process at Room Temperature", ACS Nano, 10, 3648-3657.
[59]J. Shamsi, A. S. Urban, M. Imran, L. D. Trizio, and L. Manna, 2019, "Metal Halide Perovskite Nanocrystals: Synthesis, Post-Synthesis Modifications, and Their Optical Properties", Chem. Rev., 119, 3296-3348.
[60]L. Zhang, W. Liang, L. Xu, M. Zhu, X. Wang, J. Su, L. Li, N. Liu, Z. Zhang, and Y. Gao, 2021, "Room-temperature quaternary alkylammonium passivation toward morphology-controllable CsPbBr3 nanocrystals with excellent luminescence and stability for white LEDs", Chem. Engineering J., 417, 129349.
[61]G. Almeida, L. Goldoni, Q. Akkerman, Z. Dang, A. H. Khan, S. Marras, I. Moreels, and L. Manna, 2018, "Role of Acid-Base Equilibria in the Size, Shape, and Phase Control of Cesium Lead BromideNanocrystals", ACS Nano, 12, 1704-1711.
[62]Pan, B. He, X. Fan, Z. Liu, J. J. Urban, A. P. Alivisatos, L. He, and Yi Liu, 2016, "Insight into the Ligand-Mediated Synthesis of Colloidal CsPbBr3 Perovskite Nanocrystals: The Role of Organic Acid, Base, and Cesium Precursors", ACS Nano, 10, 7943-7954.
[63]D. Sapori, M. Kepenekian, and L. Pedesseau, 2016, "Quantum confinement and dielectric profiles of colloidal nanoplatelets of halide inorganic and hybrid organic-inorganic perovskites", Nanoscale, 8, 6369-6378.
[64]H. Huang, L. Polavarapu, and J. A. Sichert, 2016, "Colloidal lead halide perovskite nanocrystals: synthesis, optical properties an applications", NPG Asia Mater., 8, 1-15.
[65]V. K. Ravi, G. B. Markad, and A. Nag, 2016, "Band Edge Energies and Excitonic Transition Probabilities of Colloidal CsPbX3 (X=Cl, Br, I) Perovskite Nanocrystals", ACS Energy Lett., 1, 665-671.
[66]Z. Liu, Y. Bekenstein, X. Ye, S. C. Nguyen, J. Swabeck, D. Zhang, S. T. Lee, P. Yang, W. Ma, and A. P. Alivisatos, 2017, "Ligand Mediated Transformation of Cesium Lead Bromide Perovskite Nanocrystals to Lead Depleted Cs4PbBr6 Nanocrystals", J. Am. Chem. Soc., 139, 5309-5312.
[67]F. Palazon, G. Almeida, Q. A. Akkerman, L. D. Trizio, Z. Dang, M. Prato, and L. Manna, 2017, "Changing the Dimensionality of Cesium Lead Bromide Nanocrystals by Reversible Postsynthesis Transformations with Amines", Chem. Mater., 29, 4167-4171.
[68]Q. A. Akkerman, S. Park, E. Radicchi, F. Nunzi, E. Mosconi, F. D. Angelis, R. Brescia, P. Rastogi, M. Prato, and L. Manna, 2017, "Nearly Monodisperse Insulator Cs4PbX6 (X=Cl, Br, I) Nanocrystals, Their Mixed Halide Compositions, and Their Transformation into CsPbX3 Nanocrystals", Nano Lett., 17, 1924-1930.
[69]S. Kondo, T. Sakai, H. Tanaka, and T. Saito, 1998, "AmorphizationInduced Strong Localization of Electronic States in CsPbBr3 and CsPbCl3 Studied by Optical Absorption Measurements", Phys. Rev. B, 58, 11401-11407.
[70]S. Kondo, K. Amaya, S. Higuchi, T. Saito, H. Asada, and M. Ishikane, 2001, "Fundamental Optical Absorption of Cs4PbCl6", Solid State Commun., 120, 141-144.
[71]S. Kondo, A. Masaki, T. Saito, and H. Asada, 2002, "Fundamental Optical Absorption of CsPbI3 and Cs4PbI6", Solid State Commun., 124, 211-214.
[72]S. Kondo, M. Kakuchi, A. Masaki, and T. Saito, 2003, "Strongly Enhanced Free-Exciton Luminescence in Microcrystalline CsPbBr3 Films", J. Phys. Soc. Jpn., 72, 1789-1791.
[73]S. Kondo, H. Nakagawa, T. Saito, and H. Asada, 2004, "Extremely PhotoLuminescent Microcrystalline CsPbX3 (X=Cl, Br) Films Obtained by Amorphous-to-Crystalline Transformation", Curr. Appl. Phys., 4, 439-444.
[74]S. Kondo, T. Saito, H. Asada, and H. Nakagawa, 2007, "Stimulated Emission from Microcrystalline CsPbBr3 Films: Edge Emission Versus Surface Emission", Mater. Sci. Eng. B, 137, 156-161.
[75]S. Kondo, K. Takahashi, T. Nakanish, T. Saito, H. Asada, and H. Nakagawa, 2007, "High Intensity Photoluminescence of Microcrystalline CsPbBr3 Films: Evidence for Enhanced Stimulated Emission at Room Temperature", Curr. Appl. Phys., 7, 1-5.
[76]Y. M. Chen, Y. Zhou, Q. Zhao, J. Y. Zhang, J. P. Ma, T. T. Xuan, S. Q. Guo, Z.J. Yong, J. Wang, Y. Kuroiwa, C. Moriyoshi, and H. T. Sun, 2018, "Cs4PbBr6/CsPbBr3 Perovskite Composites with Near-Unity Luminescence Quantum Yield: Large-Scale Synthesis, Luminescence and Formation Mechanism, and White Light-Emitting Diode Application", ACS Appl. Mater. Interfaces, 10, 15905-15912.
[77]S. Bhaumik, A. Bruno, and S Mhaisalkar, 2020, "Broadband emission from zero-dimensional Cs4PbI6 perovskite nanocrystals", RSC Adv., 10, 13431.
[78]L. Cao, B. Liu, L. Huang, Z. Zhou, C. G. Ma, J. Zhang, and J. Wang, 2022, "Bright and tunable emissive moodisperse CsPbI3@Cs4PbI6 nanocomposite via a precise and controllable dissolution-recrystallization method", Nano Research, 16, 1586-1594.
[79]S. R, V. Nayak, M. S. Jyothi, and R. G. Balakrishna, 2020, "Review on recent advances of core-shell structured lead halide perovskites quantum dots", J. Alloys and Compounds, 834, 155246.
[80]J. Shamsi, A. S. Urban, M. Imran, L. D. Trizio, and L Manna, 2019, "Metal Halide Perovskite Nanocrystals: Synthesis, Post-Synthesis Modifications, and Their Optical Properties", Chem. Rev., 119, 3296-3348.
[81]J. Pan, Y. Shang, J. Yin, M. De Bastiani, W. Peng, I. Dursun, L. Sinatra, A. M. E. Zohry, M. N. Hedhili, A. H. Emwas, O. F. Mohammed, Z. Ning, and O. M. Bakr, 2018, "Bidentate Ligand-Passivated CsPbI3 Perovskite Nanocrystals for Stable Near-Unity Photoluminescence Quantum Yield and Efficient Red Light-Emitting Diodes", J. Am. Chem. Soc., 140, 562-565.
[82]H. Huang, B. Chen, Z. Wang, T. F Hung, A. S. Susha, H. Zhong, and A. L. Rogach, 2013, "Water resistant CsPbX3 nanocrysals coated by polyhedral oligomeric silsesquioxane and their use as solid state luminophores in all-perovskite white light emitting devices", Chem. Sci., 7, 5699-5703.
[83]J. Pan, L. N. Quan, Y. Zhao, W. Peng, B. Murali, S. P. Sarmah, M. Yuan, L. Sinatra, N. M. Alyami, J. Liu, E. Yassitepe, Z. Yang, O. Voznyy, R. Comin, M. N. Hedhili, O. F. Mohammed, Z. H. Lu, D. H. Kim, E. H. Sargent, and O. M. Bakr, 2016, "Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering", Adv. Mater., 28, 8718-8725.
[84]E. Yassitepe, Z. Yang, O. Voznyy, Y. Kim, G. Walters, J. A. Castañeda, P. Kanjanaboos, M. Yuan, X. Gong, F. Fan, J. Pan, S. Hoogland, R. Comin, O. M. Bakr, L. A. Padilha, A. F. Nogueira, and E. H. Sargent, 2016, "Amine-Free Synthesis of Cesium Lead Halide Perovskite Quantum Dots for Efficient Light-Emitting Diodes", Adv. Funct. Mater., 26, 8757-8763.
[85]J. Zhang, A. Wang, L. Kong, L Zhang, and Z. Deng, 2019, "Controlled synthesis of zero-dimensional phase-pure Cs4PbBr6 perovskites crystals with high photoluminescence quantum yield", J. Alloys and Compounds, 797, 1151-1156.
[86]F. Chun, B. Zhang, Y. Li, W. Li, M. Xie, X. Peng, C. Yan, Z. Chen, H. Zhang, and W. Yang, 2020, "Internally-externally defects-tailored MAPbI3 perovskites with highly enhanced air stability and quantum yield", Chemical Engineering J., 399, 125715.
[87]H. Li, Y. Li, and J. Chen, 2010 “Highly Selective and Sensitive Optosensing of Pyrethroids", Chem. Mater., 22, 2451-2457.
[88]E. P. Jang, J. H. Jo, and M. S. Kim, 2018, "Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes", RSC Adv., 8, 10057-10063.
[89]F. Zhang, Z. F. Shi, Z. Z. Ma, Y. Li, S. Li, D. Wu, T. T. Xu, X. J. Li, C. X. Shana, and G. T. Du, 2018, "Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices", Nanoscale, 10, 20131-20139.
[90]W. Chen, T. Shi, J. Du, Z. Zang, Z. Yao, M. Li, K. Sun, W. Hu, Y. Leng, and X. Tang, 2018, "Highly Stable Silica-Wrapped Mn-Doped CsPbCl3 Quantum Dots for Bright White Light-Emitting Devices", ACS Appl. Mater. Interfaces, 10, 43978-43986.
[91]P. Cao, B. Yang, F. Zheng, L. Wang, and J. Zou, 2020, "High stability of silica-wrapped CsPbBr3 perovskite quantum dots for light emitting application", Ceramics International, 46, 3882-3888.
[92]S. Huang, S. Yang, Q. Wang, R. Wu, Q. Hanb, and W. Wu, 2019, "Cs4PbBr6/CsPbBr3 perovskite composites for WLEDs: pure white, high luminous efficiency and tunable color temperature", RSC Adv., 9, 42430-42437.
[93]X. Zhang, H. C. Wang, and A. C. Tang, 2016, "Robust and Stable Narrow-Band Green Emitter: An Option for Advanced Wide-Color-Gamut Backlight Display", Chem. Mater., 28, 8493-8497.
[94]Q. He, E. Mei, X. Liang, and W. Xiang, 2021, "Ultrastable PVB films-protected CsPbBr3/Cs4PbBr6 perovskites with high color purity for nearing Rec. 2020 standard", Chemical Engineering J., 419, 129529.
[95]Z. Chen, J. Zhao, R. Zeng, X. Liu, B. Zou, and W. Xiang, 2022, "High efficiency fluorescent perovskite quantum dots encapsulated in superhydrophobic silica aerogel for wide color gamut backlight displays", Chemical Engineering J., 433, 133195.
[96]P. L. Chu, W. L Huang, and S. Y Chu, 2023, "Effect of silica encapsulation on the stability and photoluminescence emission of FAxCs1-xPbX3 quantum dots for white mini light emitting diodes", J. Lumin., 263, 12009.