電子封裝技術為應用多種異質材料結合形成封裝體，而結構中材料之熱膨脹係數有所差異，故在封裝製程中受到溫度變化時會在相異材料之界面處產生熱應力，且因封裝材料多為高分子材料，如環氧樹脂與底部填充膠等，使其封裝體較易吸收潮濕環境中之濕氣，導致在迴焊過程時水氣在相異材料接合處膨脹進而造成脫層或爆米花失效。為了防止上述問題產生，本研究分為兩部分，第一部分為透過雙懸臂樑實驗探討溫度與濕度對於銅導線架與環氧樹脂封膠之界面接合強度，並觀察不同溫-濕度條件下對其界面強度之影響；由雙懸臂樑實驗中得知當雙材料試片施加負載至臨界力時，裂紋會開始擴展，研究中進一步結合理論公式求解張裂型破壞之臨界應變能釋放率，第二部分則以超薄四方平面無引腳電子封裝作為分析載具，建立其有限元素模型並將分析結果與數位影像相關法量測之實際封裝翹曲進行比對，以驗證有元素分析之準確性，後續將此模型應用於探討封裝載體受溫-濕度環境下之耦合應力，並結合虛擬裂紋閉合技術探討銅導線架與環氧樹脂封膠界面裂紋尖端之張裂型能量，進而評估其界面產生脫層之風險。再者文中亦結合基因遺傳演算法以幾何結構設計探討環氧樹脂封膠厚度、晶片厚度、黏晶膠厚度與黏晶膠尺寸對於裂紋尖端之應變能釋放率影響，由研究結果顯示：
1.越嚴苛之溫-濕度測試條件對於臨界應變能釋放率影響越顯著。
2.應變能釋放率隨會隨吸濕時間增加而下降，而其下降幅度隨吸濕飽和而減少。
3.根據濕氣擴散分析得知當WQFN置於85℃/ 85%RH環境168小時後接近完全飽和狀態。
4.晶片2之黏晶膠尺寸為影響顯著之權重因子，其應變能釋放率會隨黏晶膠尺寸增加而降低，進而降低脫層失效之風險。
5.基因遺傳演算法優化結果顯示，封裝結構優化設計參數為：封膠厚度836 μm、晶片1之黏晶膠厚度19 μm、晶片2之黏晶膠厚度10 μm、晶片1厚度203 μm、晶片2厚度216 μm與晶片2之黏晶膠尺寸4042*3861 μm2，其應變能釋放率與原設計相比降低52 %。

Electronic Packaging technology forms IC packages by applying various heterogeneous materials. The material of the package structure has different coefficients of thermal expansion. Hence, the interface of dissimilar materials will produce thermal stress when the temperature changes in the packaging process. In addition, most of the materials in the IC package are Polymers, such as Epoxy molding compound(EMC) and Underfill. It will be much easier to absorb moisture in a humid environment. Moisture will swell when the reflow process on the joint interface of dissimilar material and produce delamination or popcorn failure. To prevent the above problems, this research is divided into two parts. The first section uses the double cantilever beam experiment to explore the interfacial adhesion strength between copper lead-frame and Epoxy molding compound under the effect of thermal-moisture and observe the influence of different MSL test conditions. According to the double cantilever beam experiment, the crack will propagate when the bi-material specimen has applied the load and increases to the critical force. Furthermore, the strain energy release rate is solved by the theoretical formula. In the second section, a very very thin quad flat no-lead(WQFN) is used as an analysis vehicle and modeling by finite element method. The simulation results are compared with the warpage of the actual package measured by digital image correlation to Verify the accuracy of the finite element method. Additionally, applying this model to discuss coupled stress under hygro-thermal environment and combined with virtual crack closure technique to discuss the energy of opening mode at the crack tip of the interface between copper lead-frame/Epoxy molding compound and evaluates the risk of interfacial delamination. In addition, this research combined with genetic algorithm by structure design discusses the influence of strain energy release rate at the crack tip by EMC thickness, die thickness, die bonding size, and die bonding thickness. the results have illustrated：
1.The more strict thermal-humidity test conditions have a more significant influence on the critical strain energy release rate.
2.The strain energy release rate will decrease with the increase of moisture absorption time, and the decline rate will decrease when the moisture absorption reaches saturation .
3.According to the moisture diffusion analysis, WQFN is close to the completely saturated state of moisture absorption when WQFN is placed in the environment of 85℃/85 %RH for 168 hours.
4.The size of the die 2 bonding is a significant factor in affecting the energy of the crack tip, and the strain energy release rate will decrease as it increases, thereby it can reduce the risk of delamination failure.
5.The genetic algorithm optimization results show that the packaging structure optimization design parameters are : 836 μm the thickness of EMC, 19 μm the thickness of die 1 bonding thickness, 10 μm the thickness of die 2 bonding thickness, 203 μm the thickness of die 1 thickness, 216 μm the thickness of die 2 thickness and 4042*3861 μm2 the size of die 2 bonding, and the strain energy release rate of this design is reduced by 52 % compared with the original design.

中文摘要 .....i
英文摘要 .....ii
誌謝 .....iv
目錄 .....v
表目錄 .....vii
圖目錄 .....viii
符號說明 .....xi
第一章 緒論 .....1
1.1 前言 .....1
1.2 文獻回顧 .....2
1.2.1 雙材料界面強度量測實驗 .....2
1.2.2 電子封裝脫層失效分析 .....5
1.3 研究動機與目的 .....8
1.4 研究流程 .....9
第二章 電子封裝概論 .....10
2.1 封裝發展趨勢 .....10
2.1.1 金屬導線架封裝 .....10
2.1.2 塑膠載板封裝 .....11
2.2 QFN封裝製程概論 .....12
2.2.1 晶圓背面研磨 .....12
2.2.2 晶圓切割 .....13
2.2.3 晶片黏著 .....14
2.2.4 銲線 .....14
2.2.5 封膠 .....15
2.2.6 蓋印 .....15
2.2.7 剪切與成形 .....16
2.2.8 檢測 .....16
第三章 模擬理論基礎與實驗 .....17
3.1 濕氣擴散理論 .....17
3.2 破壞力學理論 .....18
3.3 虛擬裂紋閉合技術 .....21
3.4 JEDEC測試標準 .....22
3.5 基因遺傳演算法 .....23
3.5.1 複製 .....24
3.5.2 交配 .....24
3.5.3 突變 .....24
第四章 雙層材料界面強度量測 .....25
4.1 實驗試片製作 .....25
4.2 雙懸臂樑實驗方法與步驟 .....27
4.2.1 溫-濕度測試 .....28
4.2.2 雙懸臂樑實驗 .....29
4.3 實驗結果與討論 .....30
4.3.1 雙懸臂樑實驗模擬分析 .....31
4.3.2 張裂型破壞之臨界應變能釋放率 .....32
第五章 WQFN濕熱耦合效應裂紋模擬分析 .....34
5.1 WQFN有限元素模型建立 .....34
5.2 WQFN有限元素模型驗證 .....35
5.3 WQFN封裝結構之吸濕擴散分析 .....36
5.4 濕熱耦合效應裂紋分析 .....37
第六章 WQFN優化設計分析 .....39
6.1 優化分析方法 .....39
6.2 控制因子與參數設計 .....40
6.3 WQFN優化結果與討論 .....41
6.3.1 因子顯著性分析 .....42
6.3.2 優化參數裂紋分析結果 .....43
第七章 結論與未來展望 .....44
7.1 結論 .....44
7.2 未來展望 .....45
參考文獻 .....46
Extended Abstract .....49

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