臺灣博碩士論文加值系統

本研究論文探討具蒸鍍及濺鍍氧化鎳電子阻擋層之單晶矽太陽能電池光電特性研究，氧化鎳具有高能隙及與矽相接具有較低的價帶偏移等特性，因此可作為電子阻擋層，只允許電洞通過降低載子復合，本實驗分別使用蒸鍍與濺鍍兩種沉積方法形成氧化鎳，在蒸鍍方面，利用蒸鍍各種金屬顆粒(包含Ag, Ni, In, Zn and Cu)，調整氧化鎳中的不同金屬摻雜濃度，並觀察不同金屬材料的影響，最後探討薄膜改變厚度所形成的氧化鎳電子阻擋層特性；在濺鍍方面，利用氧化鎳靶材，研究濺鍍功率、搭配鍍膜時間以及調整腔體工作壓力，接著改變金屬電極探討其對太陽能電池特性的影響，最後利用紫外光光電子光譜儀(UPS)、X射線光電子能譜(XPS)、UV/VIS/IR光譜儀及穿透式電子顯微鏡(TEM) 分析氧化鎳各種材料特性。
實驗結果顯示，蒸鍍方面，以摻雜銀金屬的方式，濃度比例控制在17 %，其光電轉換效率為17.75 %，利用此濃度改變不同金屬材料並將NiO厚度固定為2 nm，發現摻雜鎳金屬後的串聯電阻從1.96 Ω-cm2下降至1.66 Ω-cm2，且光電轉換效率為18.03 %，接續實驗改為濺鍍方式，利用靶材調整濺鍍功率15 W、鍍膜時間為4 min及腔體工作壓力為6 mtorr，固定氬氣流量為12 sccm，接著搭配銀電極之光電轉換效率上升至18.84 %，與只有銀電極的太陽能電池元件相比其轉換效率增加0.71 %，由兩種鍍膜方式得知，氧化鎳電子阻擋層能夠優化轉換效率、降低載子複合及串聯電阻，而搭配電極的金屬也會攸關載子收集且提高傳輸能力。綜合以上結果，當濺鍍氧化鎳靶材時，搭配金屬電極為銀電極有最佳之開路電壓0.63 V、短路電流密度為36.73 mA/cm2、填充因子為81.82 %及串聯電阻為1.48 Ω-cm2與光電轉換效率18.84 %之單晶矽太陽電池元件，也確認NiO能隙為3.18 eV，功函數為4.3 eV，價帶偏移為0.78 eV。

In this work, the photovoltaic characteristics of monocrystalline silicon solar cells with nickel oxide electron-blocking layers deposited by evaporator and sputter were investigated. Electron can be blocked by nickel oxide due to high bandgap of NiO and low valance band offset of NiO/Si interface. Thus, the recombination can be reduced. In this study, two deposited methods, including evaporation and sputtering, were used to form nickel oxide. In evaporation, various metals, including Ag, Ni, In, Zn and Cu, were used to adjust the concentrations in NiO. Moreover, the effects of thicknesses on characteristics of NiO were presented. Furthermore, the nickel oxide target was sputtered to achieve the NiO. The parameters, including the power, time, working pressure, and metal electrode, were investigated. The material properties of NiO were measured by various instruments, including UV Photoelectron Spectroscopy (UPS), X-ray Photoelectron Spectroscopy (XPS), UV/VIS/IR Spectroscopy and Transmission Electron Microscopy (TEM).
The experimental results show that the conversion efficiency (CE) with 17.75 % was demonstrated by the Ag concentration of 17 % doped in NiO. The series resistance was reduced from 1.96 to 1.66 Ω-cm2 by Ni-doped NiO for the 2 nm. Moreover, the CE with 18.03% was presented. Furthermore, the CE with 18.84 % was enhanced at power of 15 W, 4 min, and the working pressure of 6 mtorr. Compared with the solar cells without NiO hole-selective contact layer, the CE was improved by 0.71 % for solar cells with NiO. Furthermore, the CE, recombination, and series resistance can be optimized by NiO. Based on the above results, the devices with 18.84 %, open circuit voltage of 0.63 V, short circuit current density of 36.73 mA/cm2, fill factor of 81.82 %, and series resistance of 1.48 Ω-cm2 were performed by NiO deposited by sputter. The NiO with bandgap of 3.18 eV, work function of 4.3 eV, and valance band offset (VBO) of 0.78 eV, was demonstrated.

摘要.....i
Abstract.....ii
誌謝.....iii
目錄.....iv
表目錄.....vii
圖目錄.....viii
第一章 緒論.....1
1.1電子與電洞傳輸層應用於太陽能電池之文獻回顧.....1
1.2氧化鎳材料應用於光電元件之文獻回顧.....1
1.3氧化鎳以不同沉積方式形成薄膜之文獻回顧.....2
1.4研究動機.....4
1.5論文架構.....5
第二章 實驗流程與特性量測.....6
2.1沉積電子阻擋層薄膜之前段實驗流程.....6
2.1.1通過RCA Clean清潔矽晶圓表面附著物及去除自然氧化層.....6
2.1.2利用鹼性蝕刻溶液(KOH)對矽基板表面進行糙化(Texture).....7
2.1.3藉由高溫爐管進行磷擴散(Phosphorus diffusion)形成n+射極層.....7
2.1.4利用氫氟酸(HF)混合溶液去除磷玻璃(PSG)及邊緣隔絕.....7
2.1.5藉由電漿增強化學氣相沉積(PECVD)沉積氮化矽(SiNx)作為抗反射層(ARC)於正表面n+射極層上.....8
2.1.6利用網印機將銀電極網印(Screen-printing)至抗反射層上.....8
2.1.7經由燒結爐對網印銀電極進行烤乾(Firing)使其刺穿抗反射層.....8
2.1.8使用雷射切割機(Laser Cutting)將試片切割成為2×2 cm2的大小.....8
2.2不同濃度之銀摻雜氧化鎳對太陽能電池元件特性影響.....8
2.2.1正面旋塗兩層抗蝕刻阻擋膠(Polymer)並以加熱器(Hot Plate)烤乾.....9
2.2.2浸泡氫氟酸蝕刻背表面自然氧化層後移除抗蝕刻阻擋層.....9
2.2.3不同濃度之銀摻雜氧化鎳對太陽能電池元件特性影響.....9
2.2.4蒸鍍銀金屬電極於載子選擇性傳輸層上.....9
2.3各種金屬(Ag, In, Ni, Zn及Cu)摻雜氧化鎳之影響.....10
2.3.1正面旋塗兩層抗蝕刻阻擋膠(Polymer)並以加熱器(Hot Plate)烤乾.....10
2.3.2浸泡氫氟酸蝕刻背表面自然氧化層後移除抗蝕刻阻擋層.....10
2.3.3各種金屬(Ag, In, Ni, Zn及Cu)摻雜氧化鎳之影響.....10
2.3.4蒸鍍銀金屬電極於載子選擇性傳輸層上.....10
2.4調整不同鎳濃度之氧化鎳對太陽能電池元件特性影響.....11
2.4.1正面旋塗兩層抗蝕刻阻擋膠(Polymer)並以加熱器(Hot Plate)烤乾.....11
2.4.2浸泡氫氟酸蝕刻背表面自然氧化層後移除抗蝕刻阻擋層.....11
2.4.3調整不同鎳濃度之氧化鎳對太陽能電池元件特性影響.....11
2.4.4蒸鍍銀金屬電極於載子選擇性傳輸層上.....12
2.5改變氧化鎳薄膜厚度對元件光電特性之影響.....12
2.5.1正面旋塗兩層抗蝕刻阻擋膠(Polymer)並以加熱器(Hot Plate)烤乾.....12
2.5.2浸泡氫氟酸蝕刻背表面自然氧化層後移除抗蝕刻阻擋層.....12
2.5.3改變氧化鎳薄膜厚度對元件光電特性之影響.....13
2.5.4蒸鍍銀金屬電極於載子選擇性傳輸層上.....13
2.6改變濺鍍功率與鍍膜時間對濺鍍氧化鎳電子阻擋層影響.....13
2.6.1正面旋塗兩層抗蝕刻阻擋膠(Polymer)並以加熱器(Hot Plate)烤乾.....13
2.6.2浸泡氫氟酸蝕刻背表面自然氧化層後移除抗蝕刻阻擋層.....14
2.6.3改變濺鍍功率與鍍膜時間對濺鍍氧化鎳電子阻擋層影響.....14
2.6.4濺鍍銀金屬電極於載子選擇性傳輸層上.....14
2.7探討濺鍍腔體工作壓力所形成的氧化鎳電子阻擋層之影響.....14
2.7.1正面旋塗兩層抗蝕刻阻擋膠(Polymer)並以加熱器(Hot Plate)烤乾.....15
2.7.2浸泡氫氟酸蝕刻背表面自然氧化層後移除抗蝕刻阻擋層.....15
2.7.3探討濺鍍腔體工作壓力所形成的氧化鎳電子阻擋層之影響.....15
2.7.4濺鍍銀金屬電極於載子選擇性傳輸層上.....15
2.8銀及銅電極對具濺鍍氧化鎳電子阻擋層之太陽能電池元件特性影響.....16
2.8.1正面旋塗兩層抗蝕刻阻擋膠(Polymer)並以加熱器(Hot Plate)烤乾.....16
2.8.2浸泡氫氟酸蝕刻背表面自然氧化層後移除抗蝕刻阻擋層.....16
2.8.3濺鍍氧化鎳電子阻擋性材料於矽背表面作為載子傳輸層.....16
2.8.4銀及銅電極對具濺鍍氧化鎳電子阻擋層之太陽能電池元件特性影響.....17
2.9太陽能光伏元件的電性與物性量測.....17
2.9.1太陽能電池電流-電壓特性量測(I-V measurement)系統.....17
2.9.2 X射線光電子能譜(XPS)及紫外光光電子光譜儀(UPS)量測分析.....17
2.9.3 UV/VIS/IR光譜儀量測結果分析.....18
2.9.4穿透式電子顯微鏡(TEM)量測結果分析.....18
2.9.5外部量子效率(EQE)量測結果分析.....18
第三章 利用蒸鍍技術探討氧化鎳電子阻擋層對單晶矽太陽能電池光電特性研究.....35
3.1不同濃度之銀摻雜氧化鎳對太陽能電池元件特性影響.....35
3.1.1不同濃度之銀摻雜氧化鎳之電流-電壓（I-V Measurement）量測結果分析.....35
3.1.2結論.....36
3.2各種金屬(Ag, In, Ni, Zn及Cu)摻雜氧化鎳之影響.....37
3.2.1各種金屬(Ag, In, Ni, Zn及Cu)摻雜氧化鎳之電流-電壓（I-V Measurement）量測結果分析.....37
3.2.2結論.....39
3.3調整不同鎳濃度之氧化鎳對太陽能電池元件特性影響.....39
3.3.1調整不同鎳濃度之氧化鎳對太陽能電池元件之電流-電壓（I-V Measurement）量測結果分析.....39
3.3.2結論.....41
3.4改變氧化鎳薄膜厚度對元件光電特性之影響.....41
3.4.1改變氧化鎳薄膜厚度對元件光電特性之電流-電壓（I-V Measurement）量測結果分析.....41
3.4.2結論.....43
第四章 藉由濺鍍技術探討氧化鎳電子阻擋層對單晶矽太陽能電池光電特性研究.....53
4.1改變濺鍍功率與鍍膜時間對濺鍍氧化鎳電子阻擋層影響.....53
4.1.1 改變濺鍍功率與鍍膜時間對濺鍍氧化鎳電子阻擋層之電流-電壓（I-V Measurement）量測、外部量子效率(EQE)結果分析.....53
4.1.2結論.....55
4.2探討濺鍍腔體工作壓力所形成的氧化鎳電子阻擋層之影響.....55
4.2.1探討濺鍍腔體工作壓力所形成的氧化鎳電子阻擋層之電流-電壓（I-V Measurement）量測以及穿透式電子顯微鏡(TEM)結果分析.....55
4.2.2結論.....57
4.3銀及銅電極對具濺鍍氧化鎳電子阻擋層之太陽能電池元件特性影響.....57
4.3.1銀及銅電極對具濺鍍氧化鎳電子阻擋層之太陽能電池元件特性影響之電流-電壓（I-V Measurement）量測、X射線光電子能譜(XPS)、紫外光光電子光譜儀(UPS)及UV/VIS/IR光譜儀結果分析.....57
4.3.2結論.....59
第五章 總結論與未來展望.....74
5.1總結論.....74
5.2未來展望.....74
參考文獻.....75
Extended Abstract.....78

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