臺灣博碩士論文加值系統

此篇論文分為兩大部份，第一部分為塊體樣品，第二部分為薄膜陶瓷樣品。塊體樣品部分為分析(1-x)TiO2-xSrTiO3 (x=0~0.1)在不同摻雜比例下的微波介電特性與物理特性，薄膜樣品部分則為(1-x)TiO2-xSrTiO3 (x=0.025)在不同的氧氣濃度比例下長成薄膜，分析其微波共振介電特性。
塊體樣品以固態反應法製作(1-x)TiO2-xSrTiO3 (x=0~0.1)陶瓷。煆燒升溫速率10℃/min，溫度定為1200℃，燒結溫度分為兩組1300℃與1350℃，燒結2小時。樣品利用柱狀共振技術並以網路分析儀(Vector Network Analyzers, VNA)測量微波介電常數與損耗。從X光繞射儀(X-ray Diffraction, XRD)測量可以觀察到隨者SrTiO3摻雜量提升，其繞射峰強度也隨之提高並在1350℃時有較強的峰值，並在摻雜x=0.1及燒結溫度1350℃有時者較高的介電常數138.37，其介電損耗為6.45x10-4。以阿基米德量測法可以觀察到最佳介電常數樣品密度為99.92，孔隙率為1.7x10-3。從實驗結果來看可以發現樣品密度與介電常數成正比例關係，與陶瓷介電材料需要高密度，避免空氣相的產生而導致降低介電常數相符。
薄膜則以射頻磁控濺鍍法(RF magnetron sputtering)製作(1-x)TiO2-xSrTiO3 (x=0.025)薄膜陶瓷樣品。在不同氬氣(Ar)與氧(O2)的氣體濃度比，以固定濺鍍時間、壓力及基板加熱溫度下沉積至玻璃基板長成薄膜樣品。並以矩形共振擾動技術配合網路分析儀(VNA)探討氣體濃度比下之薄膜微波介電特性。並使用場發射掃描式電子顯微鏡(Field-Emission Scanning Electron Microscope, FE-SEM)對薄膜樣品表面進行結構分析。

This paper is divided into two parts, The first part is for the bulk samples and the second part is a thin film sample. In the first part the microwave dielectric characteristics and physical characteristics of (1-x)TiO2-xSrTiO3(x=0~0.1) at different doping ratios, were analyzed The thin film sample of (1-x)TiO2-xSrTiO3(x=0.025) were grow into film at different oxygen concentration ratios and its microwave resonance dielectric properties were analyzed.
The bulk samples were made of (1-x)TiO2-xSrTiO3(x=0~0.1) ceramics sample by a solid state reaction method. The temperature increasing rate of sintering is 10℃/mins, to the set temperature 1200℃, The sintering temperature is divided into two groups of 1300℃and 1350℃, and the sintering time is 2 hours. The sample is measured by in the Post Resonance Method to find the microwave dielectric constant and loss with a Vector Network Analyzers (VNA). From the X-ray Diffraction (XRD) analysis, it can be observed that if the doping amount of the accompanying SrTiO3 is increased, the diffraction peak intensity is also increased, and the diffraction peak intensity has the strongest peak at 1350℃ for x = 0.1 and sintering temperature 1350 ℃. The highest the dielectric constant is 138.37 and the dielectric loss is 6.45x10-4.From the Archimedes' measurement method, this sample’s density is 99.92 and the porosity is 1.7x10-3. From the experimental results, it can be found that the density of the sample is proportional to the dielectric constant, which is in accordance with the need for high density of ceramic dielectric materials to avoid the generation of the air phase and reduce the dielectric constant.
The thin film ceramic samples of (1-x) TiO2-xSrTiO3 (x = 0.025) was prepared by RF magnetron sputtering. A thin film sample was deposited on a glass substrate at a fixed sputtering time, pressure and substrate heating temperature at different gas concentration ratios of argon (Ar) and oxygen (O2).The Extended Cavity Perturbation Technique was used in conjunction with a Vector Network Analyzer (VNA) to investigate the dielectric properties at microwave frequency of thin-film for various gas concentration ratios. A field emission scanning electron microscope (Field-Emission Scanning Electron Microscope, FE-SEM) was used to analyze the structure of the film surface.

摘要………i
Abstract………ii
誌謝………iv
目錄………v
表目錄………viii
圖目錄………ix
第一章 緒論………1
1-1前言………1
1-2研究動機與目的………1
1-3論文架構………2
第二章 基礎理論………3
2-1介電理論………3
2-1-1介電原理………3
2-1-2 介電損失………7
2-2介質共振器………8
2-2-1介質共振模態………9
2-2-2介質共振模態及理論………13
2-3 品質因數………15
2-4 微波測量技術………18
2-4-1 柱狀共振技術………18
2-4-2 共振腔擾動技術………21
2-5 塊體製作………24
2-5-1 固態反應法(Solid State Reaction Process)………24
2-5-2 固態反應法之優缺點………25
2-5-3 燒結機構………25
2-6 薄膜樣品製作………26
2-6-1 濺鍍原理………26
2-6-2 PVD濺鍍製程技術的優點………26
2-6-3 電漿原理………27
2-6-4 薄膜成長機制………27
第三章 實驗方法………29
3-1陶瓷粉末簡介………29
3-1-1 二氧化鈦(TiO2)………29
3-1-2 鈦酸鍶(SrTiO3)………33
3-2 (1-x)TiO2-xSrTiO3塊體樣品製作………35
3-2-1 塊體樣品實驗介紹………35
3-2-2 塊體樣品製備流程………35
3-2-3 塊體樣品介電量測分析………35
3-3 (1-x)TiO2-xSrTiO3薄膜樣品製作………39
3-3-1 薄膜樣品實驗方法………39
3-3-2 基板清洗………39
3-3-3 濺鍍靶材製作方法………40
3-3-4 薄膜樣品濺鍍沉積流程………40
3-3-5 定義共真頻率………43
3-3-6 薄膜校正樣品………44
3-3-7 薄膜樣品之介電特性分析………44
3-4 結構分析與特性量測方式………45
3-4-1 密度、空隙率量測………45
3-4-2 微波介電特性量測-網路分析儀………46
3-4-3 FE-SEM場發射掃描式電子顯微鏡分析………47
3-4-4 X光繞射分析………47
第四章 結果與討論………49
4-1 (1-x)TiO2-xSrTiO3(x=0~0.1)不同燒結溫度對塊體的影響………49
4-1-1晶體的結構及表面分析………49
4-1-2晶體的相對密度與空隙率分析………51
4-1-3介電特性分析………52
4-1-4小結………53
4-2 (1-x)TiO2-xSrTiO3(x=0.025)不同氣體比例對薄膜的影響………55
4-2-1晶體的結構與表面微結構分析………55
4-2-2介電特性分析………63
4-2-3小結………63
第五章 結論與未來研究………80
5-1 塊體樣品(1-x)TiO2-xSrTiO3(x=0~0.1)………80
5-2 薄膜樣品(1-x)TiO2-xSrTiO3(x=0.025)………80
5-3 未來研究………81
參考文獻………82
Extended Abstract………85

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