臺灣博碩士論文加值系統

本論文以量子點作為發光材料，分別製作下發光與上發光量子點發光二極體，藉由元件結果分別調整元件結構之參數，使元件達到最佳厚度以呈現最佳光學特性。下發光量子點發光二極體結構為Glass/ITO/PEDOT:PSS/Poly-TPD/QD/TPBi/LiF/Al，透過改變電子注入層、電洞傳輸層及電子傳輸層之厚度，以此降低啟動電壓及提升光學特性，元件電流可降至29.08mA並保持良好的發光表現1393 cd/m2及效率4.78 cd/A。
上發光量子點發光二極體導入無機材料ZnO及替代有機材料TmPyPB作為電子傳輸層，兩者皆有高載子遷移率之特性，其結構為Glass/Al/ZnO/QD/TCTA/MoO3/Ag和Glass/Al/LiF/TmPyPB/QD/TCTA/MoO3/Ag，分別表現出301.8 cd/m2與757.3 cd/m2之亮度，而由於其高電流，因此透過改變MoO3之厚度，降低電洞注入能力進而降低電流，實驗結果顯示成功地將電流降低至10.9 mA且亮度仍保持在702.2 cd/m2，使得效率提升至6.43 cd/A。
最後使用具表面粗化結構之基板製作上發光元件，由於其表面粗化結構周圍的TiO2溶膠-凝膠過厚，元件中的載子不易傳輸，因此在高電壓下無法表現出較高的亮度，而在低電壓下其具有基板表面粗化結構之元件之亮度明顯高於為具有粗化結構之元件。

This paper utilizes quantum dots as the luminescent material to fabricate both bottom-emitting and top-emitting quantum dot light-emitting diodes (QLEDs). By adjusting the parameters of the device structure based on the device results, optimal thicknesses are achieved to exhibit the best optical properties.
The structure of the bottom-emitting QLED is Glass/ITO/PEDOT:PSS/Poly-TPD/QD/TPBi/LiF/Al. By varying the thickness of the electron injection layer, hole transport layer, and electron transport layer, the operating voltage is reduced and optical properties are enhanced. The device current can be reduced to 29.08 mA while maintaining good luminance performance of 1393 cd/m² and an efficiency of 4.78 cd/A.
For the top-emitting QLED, inorganic material ZnO and the alternative organic material TmPyPB are introduced as the electron transport layer, both possessing high carrier mobility characteristics. The structures are Glass/Al/ZnO/QD/TCTA/MoO3/Ag and Glass/Al/LiF/TmPyPB/QD/TCTA/MoO3/Ag, exhibiting luminance of 301.8 cd/m² and 757.3 cd/m² respectively. Due to high current, the thickness of MoO3 is adjusted to reduce hole injection capability and consequently decrease the current. Experimental results successfully lower the current to 10.9 mA while maintaining luminance at 702.2 cd/m², leading to an efficiency improvement to 6.43 cd/A.
The light-emitting device was fabricated on a substrate with a roughened surface structure. Due to the excessive thickness of the TiO2 sol-gel surrounding the roughened surface structure, carrier transport within the device is impeded. Consequently, the device cannot achieve higher brightness at high voltages. However, at lower voltages, the brightness of the device with the roughened substrate surface structure is significantly higher compared to the device without the roughened structure.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vi
圖目錄...vii
第一章、緒論...1
1.1量子點發光二極體簡介...1
1.2研究動機...2
第二章、量子點發光二極體、粗化原理及文獻探討...3
2.1量子點...3
2.1.1量子點發光原理...3
2.1.2電致發光量子點發光二極體(QLED)結構類型...4
2.1.3量子點電致發光原理...5
2.1.4 量子點發光二極體結構介紹...7
2.2表面粗化...8
2.2.1表面粗化結構原理...8
2.3文獻探討...9
第三章、實驗方法與步驟...10
3.1實驗流程...10
下發光...10
上發光...10
表面粗化結構...11
3.2陽極與陰極圖案化定義...12
3.3基板清潔...15
3.4元件材料之選用...17
3.5元件製備流程...18
下發光元件...18
3.5.1有機層及QD旋轉塗佈流程...18
3.5.2有機層熱蒸鍍流程...21
3.5.3金屬陰極熱蒸鍍流程...24
上發光元件...25
3.5.4 延伸電極金屬熱蒸鍍流程...25
3.5.5 電子傳輸層製備流程...27
ZnO...27
TmPyPB...28
3.5.5 QD旋轉塗佈流程...30
3.5.6有機層熱蒸鍍流程...31
3.5.7金屬陽極熱蒸鍍流程...32
表面粗化結構...33
3.5.8 表面粗化結構元件製作流程...33
3.6元件封裝...34
3.7元件I-V-L量測...36
第四章、結果與討論...38
4.1下發光量子點發光二極體元件之研究...38
4.1.1 改變Poly-TPD層數之元件比較...38
4.1.2 改變PEDOT:PSS層數之元件比較...42
4.1.3 改變TPBi厚度之元件比較...45
4.2上發光量子點發光二極體元件之研究...48
4.2.1 ZnO電子傳輸層之元件表現...48
4.2.2 TmPyPB電子傳輸層之元件表現...51
4.2.3 ZnO與TmPyPB電子傳輸層之元件比較...54
4.2.4 改變MoO3厚度之元件比較...56
4.2.5具有基板表面粗化結構之 QLED 元件表現...58
第五章、結論...60
參考文獻...61
EXTENDED ABSTRACT...63

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