本論文利用射頻磁控濺鍍系統沉積氧化釔(Yttrium oxide, Y2O3)薄膜，並改變沉積時的製程溫度及射頻功率，找出最佳化的沉積條件，接著再利用高密度的六氟化硫(Sulfur fluoride, SF6)進行電漿表面處理，使氧化釔薄膜表面形成氟氧化釔(Yttrium oxyfluoride, YOF)鈍化層。經由原子力顯微鏡分析結果顯示SF6電漿表面處理後的Y2O3薄膜粗糙度為6.51 nm經過四氟化碳/氧(CF4/O2)電漿蝕刻後表面粗糙度為5.35 nm，可以發現並沒有明顯的變化。X-ray光電子能譜儀分析結果顯示電漿表面處理的Y2O3薄膜與電漿蝕刻後表面的氟(F)元素從原子含量40.27變成54.75 %，比起沒經過SF6電漿表面處理的Y2O3薄膜的3.33變成55.09 %，可以證實經過SF6電漿表面處理後表面擁有YOF鈍化層的Y2O3薄膜具有較好的化學穩定性。穿透式電子顯微鏡分析，經過電漿表面處理後表面會形成約20 ~ 40 nm的YOF鈍化層，提供了Y2O3薄膜在CF4/O2電漿蝕刻後結構上有較完整的晶格圖案，有較佳的抗蝕刻特性。

In the study, yttrium oxyfluoride (Y2O3) thin films were deposited on sapphire (0001) substrate by RF magnetron sputtering. And change RF power and substrate temperature to do the best condition. Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. Atomci Force Microscope analysis results show the SF6 plasma-treated Y2O3 film Rms is 6.51 nm, and after CF4/O2 plasma exposure Rms is 5.35 nm. The results can be found that there is no obvious change. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical composition of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Alpha-Step shows SF6 plasma-treated Y2O3 film etch depth is shallow. The SF6 plasma-treated Y2O3 film is more corrosion resistant than without plasma-treated Y2O3 film sample. Transmission electron microscopy confirmed a complete lattice pattern on YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the plasma-treated Y2O3 film, and thus accumulates fewer contamination particles.

中文摘要………………………………………………………..………………………………i
Abstract………………………………………………………..……………………………….ii
誌謝………………………………………………………..…………………………………...iv
目錄………………………………………………………..…………………………………. v
表目錄………………………………………………………..……………………………vii
圖目錄………………………………………………………..………………………………viii
第一章 緒論…..……………………………………………………..………………………...1
1.1前言………………………………………………………..……………………….....1
1.2研究動機………………………………..…………………………………………….3
第二章 理論基礎及文獻回顧…..……..………………..……………………..……………...7
2.1 抗氟氣電漿蝕刻材料的發展…………….…………………..………………….......7
2.2抗氟氣電漿蝕刻塗層製備……..………………………………..…………………...7
2.2.1燒結…..………………………………......................................…………………..8
2.2.2大氣電漿噴塗…………………………………………….…………..……...……8
2.2.3膠凝膠法…..……………………………………………………………………....9
2.2.4離子鍍膜…………...…………………………………………………………..….9
2.2.5電子束蒸鍍……………………..….……………………………………………...9
2.2.6射頻磁控濺鍍………………..…………………………………………………..10
2.3電漿表面處理……………………………………………………………………….11
2.4電漿蝕刻…………………………………………………………………………….11
第三章 實驗流程與儀器介紹………………………………..……………………………...15
3.1實驗流程...…………………………………………..................................................15
3.2試片前處理...…………………………………………..............................................16
3.3實驗樣品製備...………………………………………..............................................16
3.3.1氧化釔(Y2O3)與氟化釔(YF3)薄膜製備…...…………..…….……………..........16
3.3.2六氟化硫(SF6)電漿表面處理……………...……………………….....................17
3.3.3四氟化碳/氧(CF4/O2)電漿蝕刻………………..……...........................................18
3.4分析儀器與原理介紹………………….…………………………............................18
3.4.1 X-ray繞射分析儀…………………………………………….............................18
3.4.2場發射掃描式電子顯微鏡……………...…………………………….................19
3.4.3 X-ray光電子能譜儀……………………………………………….....................20
3.4.4原子力顯微鏡………………………………………...….....................................21
3.4.5穿透式電子顯微鏡…………………………………...……….............................21
3.4.6紫外光/可見光光譜儀……..…………………………………….........................22
3.3.7奈米壓痕測試儀………………………………...………….................................23
第四章 實驗結果與討論………………………………………………….............................31
4.1製程參數對氧化釔(Y2O3)與氟化釔(YF3)薄膜製備特性探討………………...….31
4.2調變電漿表面處理時間對氧化釔(Y2O3)與氟化釔(YF3)薄膜材料特性探討…....37
4.3調變電漿表面處理射頻功率對氧化釔(Y2O3)與氟化釔(YF3)薄膜材料特性探
討………………………………………………………………………….…………42
第五章 結論…………..……………………………………...................................................69
參考文獻………………………………………………...........................................................71
Extended Abstract………………………………………….....................................................75

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