臺灣博碩士論文加值系統

本論文主要為研究並設計一個低雜訊放大器(Low Noise Amplifier , LNA),設計的頻
段為 X-band(8GHz~12GHz)。低雜訊放大器位於射頻接收機前端的位置,因此低雜訊放
大器在此系統中扮演極為重要的角色,接收訊號時必須將雜訊抑制,並且要兼具良好的
增益及不錯的穩定度。本論文的電路設計使用了串接式架構、疊接式架構、源級退化式
電感、迴授式架構和電流再利用架構來完成,並將模擬數值及量測結果進行比較與分析。
本研究採用的 0.15μm pHEMT 製程是由穩懋半導體公司(WIN Semiconductors Corp.)所提
供。

論文的第一部份為 X-Band 之串接式低雜訊放大器,使用電感及電容來做輸入及輸
出的匹配,並利用串接架構來提高電路平坦度及增益。此電路模擬增益為 12.16~17.46dB,

輸入反射係數為-10.62~-23.08dB,輸出反射係數為-10.01~-11.55 dB,反向隔離度為-
27.31~-34.48 dB,雜訊指數為 1.62~1.87dB。

第二部份為 X-Band 之疊接式低雜訊放大器,主要使用疊接式架構和電流再利用架
構,利用疊接式架構的降低米勒效應,並使用電流再利用架構將增益提高。此電路模擬
增益為 11.40~12.80dB,輸入反射係數為-10.11~-25.67dB,輸出反射係數為-10.88~-13.42
dB,反向隔離度為-20.76~-21.90 dB,雜訊指數為 1.05~1.33 dB。

This thesis focuses on the research and design of Low Noise Amplifiers (LNA) in the X-
band frequency range (8GHz~12GHz). The LNA is a critical component located at the front-
end of the RF receiver, which must suppress noise and provide a good gain and stability. The

circuit designs in this paper utilize the cascade structure, cascode structure, source inductance
degeneration, feedback structure, and current reuse method to achieve the circuit specs .The
simulated values and measurement results are compare and analyzed. The 0.15μm pHEMT
process provided by WIN Semiconductors Corp. is adopted in this study to realize the circuit.

The first part of this thesis is a cascade low noise amplifier located at the X-band frequency,
which uses inductors and capacitors for input and output matching and employs a cascade
structure to enhance circuit flatness and gain. The simulated gain is 12.16 ~ 17.46dB, input
return loss is -10.62 ~ -23.08dB, output return loss is -10.01 ~ -11.55dB, isolation is -27.31 ~ -
34.48dB, and noise figure is 1.62 ~ 1.87dB.

The second part is a low noise amplifier with cascode structure for the X-band, which also
utilizes a current reused design to reduce the Miller effect and increase the gain. The simulated
gain is 11.40 ~ 12.80dB, input reture loss is -10.11 ~ -25.67dB, output reture loss is -10.88 ~ -
13.42dB, isolation is -20.76 ~ -21.90dB, and noise figure is 1.05 ~ 1.33dB.

摘要.............................................................................................................................................i
Abstract.......................................................................................................................................ii
誌謝...........................................................................................................................................iv
目錄............................................................................................................................................v
表目錄......................................................................................................................................vii
圖目錄.....................................................................................................................................viii
第一章 緒論..............................................................................................................................1
1.1 研究背景.........................................................................................................................1
1.2 研究目的.........................................................................................................................2
1.3 章節介紹.........................................................................................................................3
第二章 基本原理......................................................................................................................4
2.1 簡介.................................................................................................................................4
2.2 散射參數(Scattering parameters)....................................................................................4
2.3 雜訊指數(Noise Figure; NF) ..........................................................................................6
2.3.1 雜訊因子(Noise Factor; F)........................................................................................6
2.3.2 熱雜訊(Thermal Noise).............................................................................................7
2.3.3 散射雜訊(Shot Noise)..............................................................................................8
2.3.4 閃爍雜訊(Flicker Noise)..........................................................................................9
2.3.5 高電場擴散雜訊(High-Field Diffusion Noise) ..................................................... 11
2.3.6 等效雜訊溫度(Equivalent Noise Temperature).....................................................12
2.3.7 多級放大器雜訊計算............................................................................................14
2.4 線性度(Linearity)..........................................................................................................15
2.4.1 1dB 增益壓縮點 .....................................................................................................15
2.4.2 第三階截止點(Input 3rd-Order Intercept point,IIP3) ............................................17
2.5 穩定度(Stability)...........................................................................................................18
2.6 0.15μm pHEMT 小訊號模型.........................................................................................21
2.7 低雜訊放大器架構.......................................................................................................21
2.7.1 串接式架構(Cascade Architecture) .......................................................................22
2.7.2 回授式放大器(Feedback Amplifer).......................................................................22
2.7.3 源極電感退化式寬頻放大器(Inductive Source Degeneration)............................23
2.7.4 疊接式架構(Cascode Construction) ......................................................................24
2.7.5 電流再利用架構(Current-Reuse Construction).....................................................25
第三章 X-band 頻段之串接型低雜訊放大器設計..............................................................27
3.1 設計目的.......................................................................................................................27
3.2 設計流程.......................................................................................................................27
3.3 電路設計.......................................................................................................................29
3.4 模擬結果.......................................................................................................................32
3.5 量測結果.......................................................................................................................38
3.6 結論與討論...................................................................................................................43
第四章 X-Band 之疊接式低雜訊放大器設計 ......................................................................44
4.1 設計目的.......................................................................................................................44
4.2 電路設計.......................................................................................................................44
4.3 模擬結果.......................................................................................................................47
4.4 量測結果.......................................................................................................................52
4.5 結論與討論...................................................................................................................57
第五章 結論與未來展望........................................................................................................58
參考資料..................................................................................................................................59
Extended Abstract.....................................................................................................................61

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