本研究論文探討應用於串接太陽能電池之氧化銦錫與負型矽介面特性提升研究，由
於氧化銦錫與負型矽的功函數差，使得氧化銦錫與負型矽介面間存在著較高的蕭基能障，
因此造成很大的串聯電阻，故本研究擬導入各種金屬於氧化銦錫與負型矽介面降低串聯
電阻，導入的金屬有銦、銀、鋁與鋁 /氟化鋰堆疊層，首先，透過 Transfer Length Method (TLM)量測技術，探討各種金屬對接觸電阻的影響，金屬厚度效應亦同時探討，接著利
用逆偏電容 -電壓量測及順偏電流 -電壓量測，計算各種介面的蕭基能障高度，最後將前
述實驗的最佳參數導入單晶 矽太陽能電池元件，透過不同參數的調整，比較太陽能電池
的各種光電特性如光電轉換效率、開路電壓、短路電流、填充因子與串聯電阻等。
實驗結果顯示，對於各種金屬導入氧化銦錫與負型矽介面，
金屬鋁 /氟化鋰堆疊層與
負型矽介面的結構下，其氟化鋰與金屬鋁厚度分別為 3 nm與 200 nm，負型矽片電阻為
123.98  /sq，可得到最佳的接觸電阻為 9.76 × 10-4  -cm2，蕭基能障高度實驗結果顯示
當導入氟化鋰與金屬鋁於氧化銦錫與負型矽介面時其蕭基能障高度降為 0.423 eV，最後
將各種最佳參數導入太陽能電池的製作， 實驗結果顯示，在金屬銀 /氧化銦錫 /堆疊層與
負型矽介面結構下，其光電轉換效率為 11.57 %、開路電壓為 588 mV、短路電流為 28.5 mA/cm2、填充因子為 68.88 %及串聯電阻為 4.06  -cm2。當導入金屬銀於氧化銦錫與負
型矽介面時，其光電轉換效率最佳增加至 13.26 %、開路電壓為 607 mV、短路電流為
28.92 mA/cm2、填充因子為 76.12 %及串聯電阻為 2.3  -cm2。

In this thesis, enhancement of indium tin oxide (ITO) and n-type silicon interface characteristics for tandem solar cells applications were investigated. Since the different of work function between ITO and n-type silicon, there is a high Schottky barrier between ITO and n-type silicon, resulting in a large series resistance. Thus, the series resistances between ITO and n-type silicon were reduced by the incorporation of various metals. The metals include indium (In), silver (Ag), aluminum (Al) and aluminum/lithium fluoride (Al/LiF) stacks. Firstly, the contact resistances were monitored through the transfer length method (TLM) measurement technology, Effects of the thicknesses on contact resistance were presented. Furthermore, the Schottky barrier heights of various interfaces were calculated by capacitance-voltage measurement (C-V) under reverse biasing under forward biasing. Finally, the optimal parameters of the previous experiments are introduced into the mono-crystalline silicon solar cells. The device properties, including conversion efficiencies (CE), open-circuit voltages, short-circuit currents, fill factors, and series resistances, were demonstrated.
The results indicate that the optimum contact resistance was demonstrated around 9.76 × 10-4  -cm2 by Al/LiF stacked films with the Al/LiF of 200/3 nm and the n-type silicon of 123.98  /sq. The Schottky barrier height was reduced to be around 0.423 eV by incorporation of Al/LiF between the ITO and n-type Si substrate. The results indicate that the device with a CE of 11.57 %, an open-circuit voltage of 588 mV, a short-circuit current of 28.5 mA/cm2, a fill factor of 68.88 %, and a series resistance of 4.06  -cm2 were achieved by Ag/ITO/n-Si structure. The enhanced characteristics of the cells with a CE of 13.36 %, an open-circuit voltage of 607 mV, a short-circuit current of 28.92 mA/cm2, a fill factor of 76.12 %, and a series resistance of 2.3  -cm2, were demonstrated by the Ag/ITO/Ag/n-Si structure.

摘要......i
Abstract......ii
誌謝......iii
目錄......iv
表目錄......vii
圖目錄......viii
第一章 緒論......1
1.1氧化銦錫(ITO)的蕭基接觸之文獻回顧......1
1.2 利用Transfer Length Method (TLM)的方法求得接觸電阻之文獻回顧......1
1.3氧化銦錫(ITO)連接層應用於串接太陽能電池文獻回顧......3
1.4各種金屬特性之文獻回顧......4
1.5研究動機......5
1.6論文架構......5
第二章 實驗流程、製程參數與量測......6
2.1前段實驗流程......6
2.1.1清洗矽晶片表面與去除自然氧化層(RCA clean)......6
2.1.2使用氫氧化鉀鹼性溶液(KOH)對矽晶片進行糙化(Textured)......7
2.1.3用高溫爐管對矽晶片進行磷擴散以形成n+射極(Diffusion)......7
2.1.4退火使擴散後的晶格重新排列(Annealing)......7
2.1.5擴散後將磷玻璃去除(PSG Removed)......7
2.1.6進行邊緣隔絕與背表面拋光(Edge Isolation)......7
2.1.7使用電漿增強型化學氣相沉積法(Plasma-enhanced chemical vapor deposition, PECVD)沉積氮化矽(SiNx)抗反射層(ARC)......7
2.1.8使用雷射切割矽晶片大小(Laser Cutting)......8
2.1.9浸泡二氧化矽蝕刻液(BOE)去除正表面的氮化矽(SiNx)與浸泡稀釋後的氫氟酸(DHF)去除自然氧化層......8
2.2探討氧化銦錫(ITO)及氧化銦錫/銦堆疊層(ITO/In)與負型矽介面(N-Si)之接觸電阻......8
2.2.1黏貼不鏽鋼硬遮罩(Mask)於正面n+射極上......8
2.2.2改變蒸鍍金屬銦(In)的厚度於正面不鏽鋼硬遮罩(Mask)上......8
2.2.3濺鍍透明導電電極氧化銦錫(ITO)於正面金屬銦(In)上......8
2.2.4蒸鍍金屬銀(Ag)於正面透明導電電極氧化銦錫(ITO)上......9
2.2.5去除不鏽鋼硬遮罩(Mask)......9
2.3氟化鋰(LiF)厚度效應對串聯電阻特性研究......9
2.3.1黏貼不鏽鋼硬遮罩(Mask)於正面n+射極上......9
2.3.2改變蒸鍍氧化物氟化鋰(LiF)的厚度於正面不鏽鋼硬遮罩(Mask)上......9
2.3.3蒸鍍金屬鋁(Al)於正面氧化物氟化鋰(LiF)上......10
2.3.4去除不鏽鋼硬遮罩(Mask)......10
2.4鋁(Al)厚度效應對氧化銦錫/鋁/氟化鋰堆疊層(ITO/Al/LiF)特性影響......10
2.4.1黏貼不鏽鋼硬遮罩(Mask)於正面n+射極上......10
2.4.2蒸鍍氧化物氟化鋰(LiF)於正面不鏽鋼硬遮罩(Mask)上......10
2.4.3蒸鍍金屬鋁(Al)於正面氧化物氟化鋰(LiF)上......11
2.4.4濺鍍透明導電電極氧化銦錫(ITO)於正面金屬鋁(Al)上......11
2.4.5蒸鍍金屬銀(Ag)於正面透明導電電極氧化銦錫(ITO)上......11
2.4.6去除不鏽鋼硬遮罩(Mask)......11
2.5金屬銀(Ag)及鋁(Al)對氧化銦錫(ITO)與負型矽介面(N-Si)之接觸電阻特性影響之研究......11
2.5.1黏貼不鏽鋼硬遮罩(Mask)於正面n+射極上......12
2.5.2改變蒸鍍材料金屬銀(Ag)與金屬鋁(Al)於正面不鏽鋼硬遮罩(Mask)上......12
2.5.3濺鍍透明導電電極氧化銦錫(ITO)於正面金屬銀(Ag)或金屬鋁(Al)上......12
2.5.4蒸鍍金屬銀(Ag)於正面透明導電電極氧化銦錫(ITO)上......12
2.5.5去除不鏽鋼硬遮罩(Mask)......13
2.6氧化銦錫(ITO)搭配各種金屬之堆疊層與負型矽介面(N-Si)之蕭基接面特性研究與C-V量測......13
2.6.1使用雷射切割矽晶片大小(Laser Cutting)......13
2.6.2浸泡稀釋氫氟酸蝕刻液(DHF)去除表面的自然氧化層......13
2.6.3網版印刷銀膠於背面形成金屬銀(Ag)電極(Screen-Printed Ag)......13
2.6.4燒結背面金屬銀(Ag)電極(Fire)......13
2.6.5旋塗抗蝕刻阻擋可剝膠(Spin coated polymer)......14
2.6.6浸泡稀釋氫氟酸蝕刻液(DHF)去除表面的自然氧化層與去除抗蝕刻阻擋可剝膠......14
2.6.7黏貼不鏽鋼硬遮罩(Mask)於正面......14
2.6.8改變蒸鍍材料於正面不鏽鋼硬遮罩(Mask)上......14
2.6.9濺鍍透明導電電極氧化銦錫(ITO)於正面蒸鍍材料上......14
2.6.10蒸鍍金屬銀(Ag)於正面透明導電電極氧化銦錫(ITO)上......15
2.6.11去除不鏽鋼硬遮罩(Mask)......15
2.6.12退火(Annealed)......15
2-7各種金屬對氧化銦錫(ITO)與負型矽介面(N-Si)特性提升之太陽能電池光電特性研究......15
2.7.1黏貼不鏽鋼硬遮罩(Mask)與矽晶片於正面n+射極上及對準方法......15
2.7.2改變蒸鍍材料於正面不鏽鋼硬遮罩(Mask)上......16
2.7.3去除不鏽鋼硬遮罩(Mask)與遮擋用矽晶片......16
2.7.4濺鍍透明導電電極氧化銦錫(ITO)於正面......16
2.7.5黏貼不鏽鋼硬遮罩(Mask)與對準方法......16
2.7.6蒸鍍金屬銀(Ag)於正面透明導電電極氧化銦錫(ITO)上......16
2.7.7去除不鏽鋼硬遮罩(Mask)與對準用矽晶片......17
2.7.8蒸鍍氧化物二氧化鉬(MoO2)於背面作為電子阻擋層......17
2.7.9蒸鍍金屬銀(Ag)於背面氧化物二氧化鉬(MoO2)上......17
2.8 TLM(Transfer Length Method)量測、太陽能電池元件光電電性量測與表面材料分析......17
2.8.1太陽能電池電流-電壓量測(I-V measurement)與TLM(Transfer Length Method)計算......17
2.8.2太陽能電池電壓-電容量測(C-V measurement)與能障高度計算(BN)......18
2.8.3掃描式電子顯微鏡(Scanning electron microscope, SEM)材料分析......18
2.8.4紫外光/可見光/近紅外光(UV/VIS/IR)光譜儀量測......18
2.8.5紫外光光電子光譜儀(UPS)量測結果分析與計算功函數......18
2.8.6外部量子效率(EQE)量測結果分析與計算......18
第三章 應用於串接太陽能電池之氧化銦錫與負型矽介面特性提升研究......35
3.1 探討銦(In)置入氧化銦錫(ITO)與負型矽介面(N-Si)之影響......35
3.1.1 銦厚度(In)效應之Transfer Length Method (TLM)量測接觸電阻結果 分析......35
3.1.2 總結與討論......37
3.2探討鋁/氟化鋰堆疊層(Al/LiF)置入氧化銦錫(ITO)與負型矽介面(N-Si)之影響......37
3.2.1 氟化鋰厚度(LiF)效應之Transfer Length Method (TLM)量測接觸電 阻結果分析......37
3.2.2 鋁厚度(Al)效應之Transfer Length Method (TLM)量測接觸電阻結果分析......37
3.2.3 總結與討論......40
3.3金屬銀(Ag)及鋁(Al)對氧化銦錫(ITO)與負型矽介面(N-Si)之影響......40
3.3.1 金屬銀(Ag)及鋁(Al)之Transfer Length Method (TLM)量測接觸電阻 結果分析......40
3.3.2 總結與討論......40
3.4 氧化銦錫(ITO)搭配各種金屬(Ag, Al, Al/LiF, In)之堆疊層與負型矽介面(N-Si)之蕭基接面特性研究......41
3.4.1 熱處理之電容-電壓(C-V Measurement)量測蕭基能障結果分析......41
3.4.2 總結與討論......42
3.5 各種金屬(Ag, Al, Al/LiF, In)對氧化銦錫(ITO)與負型矽介面(N-Si)特性提升之太陽能電池光電特性研究......42
3.5.1 各種金屬(Ag, Al, Al/LiF, In)對氧化銦錫(ITO)與負型矽介面(N-Si)之電流-電壓(I-V Measurement)量測光電特性結果分析......42
3.5.2 探討各種金屬(Ag, Al, Al/LiF, In)對氧化銦錫(ITO)與負型矽介面(N-Si)之外部量子效率量測分析......43
3.5.3 總結與討論......44
3.6 應用於串接太陽能電池之氧化銦錫(ITO)與負型矽介面(N-Si) 特性提升研究之光電特性影響......44
3.6.1 探討氧化銦錫(ITO)之SEM材料分析......44
3.6.2 探討氧化銦錫(ITO)之UV/VIS/IR材料分析......44
3.6.3 探討氧化銦錫(ITO)與金屬之UPS材料分析......44
3.6.4 總結與討論......44
第四章 總結論與未來展望......66
4.1 總結論......66
4.2 未來展望......66
參考文獻......67
Extended Abstract......70

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