臺灣博碩士論文加值系統

傳統感測器需要使用外部電力系統作為供電來源，若將感測器與自供電系統結合，自供電感測器可擁有不需依靠外加電力系統仍可繼續運作的能力。因不需依靠外加電力系統，使自供電感測器擁有更加廣泛的應用範圍。
本研究自供電元件下電極(底部電極)的製作，是通過水熱法成長氧化鋅奈米柱陣列(NR arrays)，形成壓電式奈米發電機(PENG)的主結構，再使用射頻磁控濺鍍系統沉積氧化鎵薄膜於奈米柱之上，作為紫外光C波段感測器的光感測層。掃描式電子顯微鏡(SEM)以及穿透式電子顯微鏡(TEM)的測量分析表明，氧化鎵薄膜的確成長於氧化鋅奈米柱陣列之上，而X-光繞射分析(XRD)的分析結果顯示，氧化鎵薄膜具有非晶結構，其中氧化鋅奈米柱具有六方纖鋅礦結構。此外，有關上電極(頂電極)的製作，是藉由射頻磁控濺鍍系統及自行設計的圖案遮罩在石英玻璃(Quartz-glass)基板上沉積銀薄膜作為上電極。
最後將上、下電極結合成壓電式奈米發電機(PENGs)，同時也是自供電深紫外光感測器元件，我們使用自製的敲擊系統驅動PENG產生壓電勢以及電流。
結果可以發現，製作的PENG在無照光以及UVC的照射下，輸出電壓分別為136mV和102mV。在UVC照射下，輸出電壓下降了25%。顯然，我們所製備的自供電感測元件對於UVC波段具有良好的響應。

Traditional sensors need to use the external power system as the power supply source. If the sensor is combined with the self-powered system, the self-powered sensor can still operate without relying on the external power system. Because it does not depend on the external power system, the self-powered sensor has a wider range of applications.
In this study, the fabrication of the bottom electrode of the self-powered device involves the growth of zinc oxide nanorod arrays (NR arrays) using a hydrothermal method to form the main structure of a piezoelectric nanogenerator (PENG). A gallium oxide thin film is then deposited on the nanorods using a radio frequency magnetron sputtering system to serve as the light sensing layer for ultraviolet-C (UVC) band detection. Measurement and analysis using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) confirm the growth of the gallium oxide thin film on the zinc oxide nanorod arrays. X-ray diffraction analysis (XRD) reveals that the gallium oxide thin film has an amorphous structure, while the zinc oxide nanorods possess a hexagonal wurtzite structure.

The fabrication of the top electrode involves depositing a silver thin film on a quartz glass substrate using a radio frequency magnetron sputtering system and a self-designed patterned mask.
Finally, the top and bottom electrodes are combined to form piezoelectric nanogenerators (PENGs), which also function as self-powered deep ultraviolet (UV) sensors. A self-developed tapping system is used to drive the PENGs to generate piezoelectric potential and current.
The results show that the fabricated PENGs produce output voltages of 136mV and 102mV under no light and UVC irradiation, respectively. The output voltage decreases by 25% under UVC irradiation. Clearly, the self-powered sensing device we have developed exhibits good responsiveness to the UVC wavelength.

摘要...i
Abstract...ii
誌謝...iv
目錄...v
表目錄...viii
圖目錄...ix
第一章緒論...1
1.1 前言...1
1.2 研究動機與目的...2
第二章理論基礎與文獻探討...3
2.1 氧化鋅之基本材料特性介紹...3
2.1.1 氧化鋅材料的不同型態結構...4
2.1.2 氧化鋅的光學特性...5
2.2 氧化鎵之基本材料特性介紹...6
2.2.1 氧化鎵的材料特性...6
2.2.2 氧化鎵的晶體結構介紹...7
2.3 濺鍍製程的原理...8
2.3.1 射頻濺鍍的優點...10
2.4 水熱法合成氧化鋅奈米柱陣列...11
2.4.1 水熱法的優點...11
2.5 成長氧化鋅奈米柱陣列之化學反應流程...11
2.6 遮罩介紹...12
2.7 壓電效應原理介紹...12
2.8氧化鋅奈米柱壓電原理...13
2.9可調速敲擊系統...16
2.9.1 敲擊系統原理...16
2.9.2 敲擊系統的優點...16
2.9.3 敲擊系統相關參數...16
2.10光響應度(Responsivity)...16
2.11內部增益(Internal gain)...17
2.12紫外光感測原理...18
2.12.1 氧化鋅(ZnO)紫外光感測原理...18
2.12.2氧化鎵(Ga2O3) 深紫外光感測原理...19
第三章實驗步驟與機台介紹...20
3.1 實驗用品及器材介紹...20
3.2 實驗流程介紹...22
3.3基板的製備...23
3.4上電極製作介紹...24
3.5下電極製作介紹...25
3.4.2氧化鋅奈米柱陣列生長流程...25
3.5.2非晶氧化鎵薄膜生長流程...25
3.6元件製作及特性量測介紹...26
3.7材料之特性分析...28
3.7.1場發射掃描式電子顯微鏡(Field-Emission Scanning Electron Microscope, FE-SEM)...28
3.7.2能量散射光譜儀(Energy Dispersive Spectrometry, EDS)...29
3.7.3高解析穿透電子顯微鏡(High-Resolution Transmission Electron Microscope, HR-TEM)...29
3.7.4X-光繞射分析儀(X-Ray Diffraction, XRD)...30
3.7.5光激發螢光光譜儀(PL)...32
第四章實驗內容與討論...32
4.1非晶氧化鎵薄膜/氧化鋅奈米柱之自供電深紫外光感測器製備...33
4.1.1非晶氧化鎵薄膜/氧化鋅奈米柱陣列表面結構與形貌分析(SEM)...34
4.1.2非晶氧化鎵薄膜/氧化鋅奈米柱陣列之晶相分析結晶性討論(XRD)...41
4.1.3 非晶氧化鎵薄膜/氧化鋅奈米柱陣列之光激發螢光光譜儀(PL)...42
4.1.4 非晶氧化鎵薄膜/氧化鋅奈米柱陣列之成份分析(EDS)...43
4.1.5 非晶氧化鎵薄膜/氧化鋅奈米柱陣列之穿透式電子顯微鏡分析(TEM)...45
4.2 非晶氧化鎵薄膜/氧化鋅奈米柱陣列之自供電深紫外光感測器量測分析...49
4.2.1 V-t特性量測分析...49
4.2.2 I-t特性量測分析...66
第五章結論...69
5.1結論...69
5.2未來展望...71
參考文獻...72
Extended Abstract...75

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