臺灣博碩士論文加值系統

本論文研究應用於串接太陽能電池之底部具氧化鉬電洞選擇性接觸層單晶矽太陽能電池之研究之光電特性研究，串接太陽能電池結構中，氧化銦錫為其重要的連接層，因此藉由改善連接層與矽基板的介面特性，進一步增加串接太陽能電池底部元件的光電轉換效率，首先探討濺鍍功率及時間對具氧化銦錫太陽能電池的光電特性影響，接著改變預濺鍍時間、前處理方法、工作壓力及氧流量對氧化銦錫與負型矽射極介面特性之影響，同時利用網印與濕式蝕刻技術，改變氮化矽與氧化銦錫不同比率，探討對單晶矽太陽能電池的光電特性影響，最後利用掃描電子顯微鏡、霍爾量測、紫外/可見/紅外光譜儀與紫外光光電子光譜儀量測其ITO厚度、電子移動率、電阻率、穿透率、能隙及功函數等特性。
實驗結果顯示，在元件結構為Ag/ITO/n-Si(100)/p-Si(100)/MoO2/Ag情況下，濺鍍功率由30 W增加至60 W時，其光電轉換效率隨著功率增加而增加，當功率為55 W搭配30分鐘時可獲得最佳光電轉換效率為12.9 %，再增加功率其光電轉換效率會下降，預鍍時間從1分鐘變化至10分鐘，當預鍍時間為5分鐘可獲的最佳轉換效率，兩種前處理為只有BOE及BOE搭配DHF情況下，以只有BOE前處理可獲得最佳光電轉換效率，在3至9 mtorr工作壓力範圍下，以工作壓力7 mtorr為最佳，當氧流量比值O2/(O2+Ar)從0至16.7 %變動時，以無添加氧濺鍍時可獲得最佳效果，當氮化矽與氧化銦錫比率從0至25 %變化時，在完全將氮化矽去除時可獲得最佳結果。綜合上述實驗結果，當濺鍍功率為55 W、濺鍍時間為30 min、預濺鍍時間為5分鐘、前處理為BOE、工作壓力為7 mtorr、無添加氧濺鍍、無氮化矽時，最佳光電轉換效率為12.90 %、開路電壓為601 mV、短路電流密度為28.75 mA/cm2、填充因子為74.64 %及串聯電阻為2.86 Ω-cm2。

In this thesis, photovoltaic characteristics of monocrystalline silicon solar cells (MSSCs) with indium tin oxide (ITO) were presented for tandem solar cell applications. Since ITO is an important interconnecting layer (IL) for tandem solar cells, the enhancement of interface properties between ITO and silicon were used to improve the conversion efficiencies of tandem bottom solar cells. Firstly, the effects of sputtering power and time on photovoltaic characteristics of MSSCs with ITO IL were investigated, Furthermore, the parameters, including sputtering time, pre-treated method, working pressure, and oxygen flow, were achieved for interface improvement of ITO and N-type silicon emitter. Moreover, the ratios of SiNx and ITO were turned by screen-printed and wet etching technology. The thickness, electron mobility, resistivity, transmittance, energy gap, and work function were monitored by scanning electron microscope, hall measurement, UV/VIS/IR spectrometers, ultraviolet photoelectron spectroscopy, respectively.
The results indicated that the conversion efficiency (CE) was enhanced by increasing the power.However,an excess of sputtering power could cause a degradation ofthe CE. The optimum CE with 12.9 % was achieved at power is 55 W for 30 min. The optimum presputtering time with 5 min was demonstrated ranged from 1 to 10 min. The optimum CE was presented at BOE pretreatment,working pressure of 7 mtorr, without oxygen gas ambient and SiNx. The experimental results show that the MSSCs with a CE of 12.90 %, an open-circuit voltage of 601 mV, a short-circuit current density of 28.75 mA/cm2, a fill factor of 74.64 %, a series resistance of 2.86 Ω-cm2 were demonstrated by sputtering power of 55 W, sputtering time of 30 min, pre-sputter time of 5 min, BOE pre-treatment, working pressure of 7 mtorr, without oxygen ambient and SiNx.

摘要......i
Abstract......ii
誌謝......iii
目錄......iv
表目錄......vii
圖目錄......viii
第一章 緒論......1
1.1氧化銦錫透明導電薄膜應用於矽基太陽能電池之文獻回顧......1
1.2二氧化鉬載子選擇性薄膜應用於太陽能電池之文獻回顧......2
1.3氮化矽鈍化堆疊對太陽能電池的影響之文獻回顧......3
1.4研究動機......5
1.5論文架構......5
第二章 實驗流程與特性量測......6
2.1 改變氧化銦錫濺鍍參數之前段實驗製程......6
2.1.1 利用RCA (Radio Corporation of America)清洗法清洗矽基板表面......6
2.1.2 藉由鹼性氫氧化鉀(KOH)對矽基板表面濕式蝕刻形成糙化(Textured)......7
2.1.3 用高溫爐管在矽基板上磷擴散(Diffusion)以形成射極(n+)層......7
2.1.4 去除磷玻璃(PSG)與邊緣隔絕(Edge isolation)......7
2.1.5 利用電漿增強化學氣相沉積(Plasma Enhanced Chemical Vapor Deposition；PECVD)技術沉積氮化矽(SiNx)層......7
2.1.6 使用雷射切割機將單晶矽基板切割成大小為2 cm × 2 cm......8
2.2 氧化銦錫(ITO)濺鍍功率及時間對單晶矽太陽能電池之影響......8
2.2.1 利用二氧化矽蝕刻液(BOE)去除正面氮化矽(SiNx)......8
2.2.2 濺鍍氧化銦錫(ITO)於矽基板正面......8
2.2.3 利用硬遮罩(Hard mask)黏貼於正面ITO之上......8
2.2.4 熱蒸鍍銀(Ag)電極......8
2.2.5 熱蒸鍍氧化鉬(MoO2)......9
2.2.6 熱蒸鍍銀(Ag)電極......9
2.3 ITO濺鍍預鍍時間對單晶矽太陽能電池之影響......9
2.3.1 利用二氧化矽蝕刻液(BOE)去除正面氮化矽(SiNx)......9
2.3.2 濺鍍氧化銦錫(ITO)於矽基板正面......9
2.3.3 利用硬遮罩(Hard mask)黏貼於正面ITO之上......9
2.3.4 熱蒸鍍銀(Ag)電極......10
2.3.5 熱蒸鍍氧化鉬(MoO2)......10
2.3.6 熱蒸鍍銀(Ag)電極......10
2.4 ITO濺鍍前處理對單晶矽太陽能電池之影響......10
2.4.1 利用二氧化矽蝕刻液(BOE)去除正面氮化矽(SiNx)......10
2.4.2 利用氫氟酸溶液(DHF)去除表面氧化物及微粒......10
2.4.3 濺鍍氧化銦錫(ITO)於矽基板正面......11
2.4.4 利用硬遮罩(Hard mask)黏貼於正面ITO之上......11
2.4.5 熱蒸鍍銀(Ag)電極......11
2.4.6 熱蒸鍍氧化鉬(MoO2)......11
2.4.7 熱蒸鍍銀(Ag)電極......11
2.5 ITO濺鍍於氬流量與氧流量比例對單晶矽太陽能電池之影響......12
2.5.1 利用二氧化矽蝕刻液(BOE)去除正面氮化矽(SiNx)......12
2.5.2 濺鍍氧化銦錫(ITO)於矽基板正面......12
2.5.3 利用硬遮罩(Hard mask)黏貼於正面ITO之上......12
2.5.4 熱蒸鍍銀(Ag)電極......12
2.5.5 熱蒸鍍氧化鉬(MoO2)......12
2.5.6 熱蒸鍍銀(Ag)電極......13
2.6 ITO與氮化矽(SiNx)比例對單晶矽太陽能電池之影響......13
2.6.1 藉由網印技術將聚合物膠(polymer)塗於正面氮化矽(SiNx)之上......13
2.6.2 利用二氧化矽蝕刻液(BOE)去除正面氮化矽(SiNx)......13
2.6.3 濺鍍氧化銦錫(ITO)於矽基板正面......13
2.6.4 利用硬遮罩(Hard mask)黏貼於正面ITO之上......13
2.6.5 熱蒸鍍銀(Ag)電極......14
2.6.6 熱蒸鍍氧化鉬(MoO2)......14
2.6.7 熱蒸鍍銀(Ag)電極......14
2.7 ITO表面材料分析及其特性......14
2.7.1 太陽能電池光伏元件電流-電壓曲線量測(I-V curve measurement)......14
2.7.2 掃描式電子顯微鏡(Scanning electron microscope, SEM)厚度量測......14
2.7.3 紫外光電子能譜儀(Ultraviolet photoelectron spectroscopy, UPS)......14
2.7.4 紫外光/可見光/紅外光分光光譜儀(UV/VIS/IR spectrometers)......15
2.7.5 霍爾量測(Hall measurement)......15
2.7.6 外部量子效率量測系統(External quantum efficiency, EQE)......15
第三章 應用於串接太陽能電池之底部具氧化鉬電洞選擇性接觸層單晶矽太陽能電池之研究...... 32
3.1 氧化銦錫(ITO)濺鍍功率及時間對單晶矽太陽能電池之影響......32
3.1.1 氧化銦錫(ITO)濺鍍功率及時間對單晶矽太陽能電池影響之電流-電壓量測(I-V measurement)分析......32
3.1.2 氧化銦錫(ITO)濺鍍功率及時間對單晶矽太陽能電池影響之外部量子效率(External Quantum Efficiency, EQE)分析......33
3.1.3 結果與討論......34
3.2 氧化銦錫(ITO)濺鍍預鍍時間對單晶矽太陽能電池之影響......34
3.2.1 氧化銦錫(ITO)濺鍍預鍍時間對單晶矽太陽能電池影響之電流-電壓量測(I-V measurement)分析......34
3.2.2 結果與討論......35
3.3 氧化銦錫(ITO)濺鍍前處理對單晶矽太陽能電池之影響......35
3.3.1 氧化銦錫(ITO)濺鍍前處理對單晶矽太陽能電池影響之電流-電壓量測(I-V measurement)分析......35
3.3.2 結果與討論......36
3.4 氧化銦錫(ITO)濺鍍於氬流量與氧流量比例對單晶矽太陽能電池之影響......36
3.4.1 氧化銦錫(ITO)濺鍍於氬流量與氧流量比例對單晶矽太陽能電池影響之電流-電壓量測(I-V measurement)分析......36
3.4.2 結果與討論......37
3.5 氧化銦錫(ITO)與氮化矽(SiNx)比例對單晶矽太陽能電池之影響......37
3.5.1 氧化銦錫(ITO) 與氮化矽(SiNx)比例對單晶矽太陽能電池影響之電流-電壓量測(I-V measurement)分析......37
3.5.2 結果與討論......38
3.6 應用於串接太陽能電池之底部具氧化鉬電洞選擇性接觸層單晶矽太陽能電池之材料分析...... 38
3.6.1 霍爾量測(Hall measurement)......38
3.6.2 紫外光電子能譜儀(UPS)量測......38
3.6.3 掃描式電子顯微鏡(SEM)厚度量測......39
3.6.4 紫外光/可見光/紅外光分光光譜儀(UV/VIS/IR)量測......39
第四章 總結論與未來展望......69
4.1 總結論......69
4.2 未來展望......69
參考文獻......70
Extended Abstract......73
Abstract......73
Introduction......74
Experimental......74
Results and discussion......75
Conclusions......75
References......76

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