臺灣博碩士論文加值系統

本篇論文頻段應用於sub 6G，內容有四個電路分別有，一個振盪器、混頻器與功率放大器使用標準TSMC 0.18 μm製程1P6M技術來設計與實踐，而另一個震盪器使用UMC 0.18 μm製程技術來設計與實踐，經由TSRI國家半導體研究中心進行晶片量測。
第一個電路使用UMC 0.18 μm設計VCO，量測結果調諧範圍為2.57 GHz ~2.89 GHz有11.4%範圍，Phase Noise為-129.35 (dBc/Hz) @ 1 MHz，總消耗功率為-10.88mW。
第二個電路為sub 6 GHz頻段VCO，電路使用N、PMOS使用雙Current Reuse希望降低電路功耗，量測結果調諧範圍為2.85 GHz ~ 3.6 GHz有23.2 %範圍，Phase Noise為 -130.34 (dBc/Hz) @ 1 MHz，總消耗功率為 -7.98 mW，經計算FOM可達-191.5。
第三個電路為28 GHz的升頻混頻器使用ADS momentum做EM模擬分析設計，混頻器IF為3 GHz，LO為25 GHz，RF輸出為28 GHz，實際量測增益為-0.25 dB，1dB增益壓縮輸出功率(P1db)為-10 dBm，電流為4.2mA。
第四個電路為28 GHz的功率放大器一樣使用ADS momentum做EM模擬分析設計，輸入、輸出S參數分別匹配到-20.34 dB、-23.77 dB，Conversion Gain為8.52 dB，(OP1db)為5.07 dBm，IIP3為3 dBm，PAE為8.57 %。

This thesis presents sub-6 GHz and mm-wave bands for wireless applications. There are four circuits including two voltage-controlled oscillators (VCOs), an up-conversion mixer, and a power amplifier (PA) in this thesis. The above circuits are measured from the Taiwan Semiconductor Research Institute (TSRI).
For the first circuit, the proposed VCO is implemented in the UMC 0.18-μm process technology. The measured tuning range is from 2.57 to 2.89 GHz corresponding to 11.4% tuning range. The measured phase noise is -129.35 dBc/Hz at 1-MHz offset. The total power consumption is -10.88 mW.
For the second circuit, the proposed VCO is implemented in the TSMC 0.18-μm process technology. The proposed VCO uses a current-used technology to improve the power consumption. The measured tuning range is from 2.85 to 3.6 GHz corresponding to 23.2 % tuning range. The measured phase noise is -130.34 dBc/Hz at 1-MHz offset. The total power consumption is -10.88 mW. The figure of merit (FOM) is -191.5 dBc/Hz.
For the third circuit, the proposed 28-GHz up-conversion mixer is implemented in the TSMC 0.18-μm process technology. The measured conversion gain is -0.25 dB and the measured P1dB is -10 dBm. Besides, the current is 4.2 mA.
For the fourth circuit, the proposed 28-GHz PA is designed in the TSMC 0.18-μm process technology. The simulated input and output are -20.34 dB and -23.77 dB, respectively. The simulated conversion gain is 8.52 dB, the simulated (OP1db) is 5.07 dBm, the simulated IIP3 is 3 dBm, and the simulated PAE is 8.57 %.

摘要............................................................i
Abstract........................................................ii
誌謝 ........................................................iv
目錄 ........................................................v
表目錄 ........................................................vii
圖目錄 ........................................................viii
第一章 緒論 ................................................1
1.1 研究背景與動機...............................................1
1.2 論文組織 ................................................3
第二章 射頻參數介紹 ........................................4
2.1 發射器設計規格與需求 ........................................4
2.2 電壓控制振盪器的重要規格 .....................................5
2.2.1 相位雜訊 ................................................5
2.2.2 輸出功耗 ................................................6
2.3 混頻器的重要規格 ........................................6
2.3.1 非線性特性 ................................................6
2.3.2 隔離度 ................................................10
2.3.3 雜訊指數 (Noise Figure)....................................10
2.4 功率放大器的重要規格 ........................................11
2.4.1 輸出功率 ................................................11
2.4.2 效率 ................................................11
2.4.3 穩定度 ................................................12
2.4.3 鄰近通道功率比 (Adjacent channel power ratio，ACPR)........14
2.4.4 誤差向量振福 (Error vector magnitude，EVM) ................15
第三章 電壓控制振盪器 ........................................16
3.1 簡介 ................................................16
3.2 U18 VCO ................................................17
3.2.1 電路設計 ................................................17
3.2.2 電路模擬與量測結果 ........................................19
3.2.3 結果與討論 ................................................24
3.3 T18 VCO ................................................25
3.3.1 電路設計 ................................................25
3.3.2 電路模擬與量測結果 ........................................26
3.3.3 結果與討論 ................................................32
第四章 混頻器 ................................................33
4.1 簡介 ................................................33
4.2 電路設計 ................................................35
4.3 電路模擬與量測結果 ........................................36
4.4 結果與討論 ................................................41
第五章 功率放大器 ........................................42
5.1 簡介 ................................................42
功率放大器分類 ................................................42
5.2 電路設計 ................................................45
5.3 電路模擬與量測結果 ........................................46
5.4 結果與討論 ................................................52
第六章 結論 ................................................53
參考文獻 ........................................................54
Extended Abstract ........................................58

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