臺灣博碩士論文加值系統

本論文探討負型單晶矽與氧化銦錫之介面特性研究。氧化銦錫具有低電阻率及高穿透率，因此可作為串接太陽能電池之連接層及電極等，當氧化銦錫沉積在負型矽上，由於氧化銦錫及負型矽的功函數不同會產生高蕭基能障，使介面電性有較高的串聯電阻特性。為了解薄膜結構與蕭基能障之間的關聯，實驗參數包含不同的濺鍍功率和靶材氧化效應，薄膜特性利用Transfer Length Method (TLM)技術分析量測濺鍍功率對接觸電阻之影響，透過變溫順偏電流-電壓量測計算得出蕭基能障高度，經由霍爾效應分析儀獲得薄膜電阻率、載子移動率及濃度等薄膜電性，並藉由熱電子型場發射掃描式電子顯微鏡及X光繞射儀分別獲取薄膜厚度、晶粒大小、晶格方向等薄膜特性。
實驗結果顯示，氧化銦錫濺鍍在透明玻璃基板上，其濺鍍功率從50 W提升到200 W，可從霍爾效應分析儀之量測結果發現電阻率由9.51*10^-1 Ω-cm下降到1.60*10^-3 Ω-cm，若濺鍍功率超過200 W，靶材表面有放電現象影響實驗結果，為保護靶材不受損，第二階段實驗使用200 W為主要濺鍍功率，在真空中通入高純度氧氣使靶材表面氧化可將電阻率從1.60*10^-3 Ω-cm降至9.56*10^-4 Ω-cm，最後研究氧化銦錫濺鍍功率在100 W、150 W以及200 W下與負型矽介面之接觸電阻及蕭基能障的影響。實驗結果顯示，在功率為200 W及靶材通入純氧氧化下可獲得最佳接觸電阻為2.30*10^-4 Ω-cm^2及蕭基能障高度為0.319 eV及晶粒大小為4.98 nm。

Schottky barrier (SB) characteristics at the interface of N-type monocrystalline silicon and indium tin oxide (ITO) were investigated in this thesis. ITO has low electrical resistance and high transparency, making it suitable for use as the connecting layer and electrodes in serially connected solar cells. When ITO is deposited on n-type silicon, the different work functions of indium tin oxide and n-type silicon will result in a high SB, leading to higher serial resistance characteristics in the interface electrical properties. In order to understand the relationship between ITO thin film structure and SB, experimental parameters include varying sputtering power and the oxidation effect of the target material. The thin film characteristics are analyzed using the transfer length method technique to measure the effect of sputtering power on the contact resistance. The height of the SB is calculated through temperature-dependent forward current-voltage measurements. The thin film resistivity, carrier mobility, and concentration, among other thin film electrical properties, are obtained through Hall effect analysis. Furthermore, the thin film thickness, grain size, and crystallographic orientation characteristics are obtained through scanning electron microscopy and X-ray diffraction analysis, respectively.
The experimental results indicate that when ITO is sputtered onto a transparent glass substrate, increasing the sputtering power from 50 W to 200 W results in a decrease in resistivity from 9.51 × 10-1 Ω-cm to 1.60 × 10-3 Ω-cm, as observed from measurements obtained via the Hall effect analysis. If the sputtering power exceeds 200 W, there is a discharge phenomenon on the target surface that affects the experimental results. To protect the target from damage, in the second stage of the experiment, a primary sputtering power of 200 W was used, and high-purity oxygen was introduced into the vacuum to oxidize the target surface. This oxidation reduced the resistivity from 1.60 × 10-3 Ω-cm to 9.56 × 10-4 Ω-cm. Finally, the study investigated the influence of ITO sputtering power at 100 W, 150 W, and 200 W on the contact resistance and SB at the interface with n-type silicon. The experimental results demonstrate that the optimal contact resistance of 2.30 × 10-4 Ω-cm2 and a SB height of 0.319 eV, along with a grain size of 4.98 nm, are achieved at a power of 200 W with the introduction of pure oxygen for target oxidation.

摘要...........................................................................i
Abstract......................................................................ii
誌謝.........................................................................iii
目錄..........................................................................iv
表目錄.......................................................................vii
圖目錄......................................................................viii
第一章 緒論.....................................................................1
1.1氧化銦錫效能提升之回顧文獻....................................................1
1.2 氧化銦錫的蕭基能障之回顧文獻.................................................1
1.3接觸電阻量測之回顧文獻........................................................2
1.4研究動機....................................................................3
1.5論文架構....................................................................4
第二章 實驗流程及製程參數與特性量測...............................................5
2.1 改變濺鍍功率對氧化銦錫薄膜特性的影響之實驗製程.................................5
2.1.1 由雷射分割N-type wafer大小................................................5
2.1.2 將試片浸入DHF(稀釋後之氫氟酸溶液)移除表面自然氧化沉積物......................5
2.1.3 試片放入反應腔前預鍍......................................................5
2.1.4 濺鍍氧化銦錫(ITO)層.......................................................6
2.2 空氣與純氧對ITO後處理的影響之實驗製程.........................................6
2.2.1 由雷射分割N-type wafer大小................................................6
2.2.2 將試片浸入DHF(稀釋後之氫氟酸溶液)移除表面自然氧化沉積物......................6
2.2.3 試片放入反應腔前預鍍......................................................7
2.2.4 試片放入反應腔後預鍍......................................................7
2.2.5 以純氧氧化靶材表面........................................................7
2.2.6 濺鍍氧化銦錫(ITO)層.......................................................7
2.3 不同濺鍍功率對氧化銦錫與負型矽的介面接觸電阻影響之實驗製程......................8
2.3.1 藉由標準溼式清潔步驟(RCA清潔法)移除P-Si表面極微小粒子與自然生成氧化物.........8
2.3.2利用糙化混和液(DIW+IPA+KOH)對P-Si進行糙化流程...............................9
2.3.3 採用高溫度的爐管在糙化後的P-Si上利用磷擴散生成N+射極.........................9
2.3.4 RAT(快速熱退火)操作退火，使晶格重新組合排列並釋放應力........................9
2.3.5 移除P-Si基板上的磷玻璃並將邊緣隔絕處理......................................9
2.3.6 利用PECVD(電漿增強型化學氣相沉積法)沉積出抗反射層..........................10
2.3.8 將試片浸入BOE(二氧化矽蝕刻液)移除表面SiNx.................................10
2.3.9 試片放入反應腔前預鍍.....................................................10
2.3.10在P-Si上貼上Mask(不鏽鋼遮罩).............................................10
2.3.11 試片放入反應腔後預鍍....................................................11
2.3.12 以純氧氧化靶材表面......................................................11
2.3.13 濺鍍氧化銦錫(ITO)層.....................................................11
2.3.14 蒸鍍Ag層作為電極並移除Mask..............................................11
2.4 不同濺鍍功率對氧化銦錫與負型矽的介面蕭基能障影響之實驗製程.....................12
2.4.1 由雷射分割N-type wafer大小...............................................12
2.4.2 將試片浸入DHF(稀釋後之氫氟酸溶液)移除表面自然氧化沉積物.....................12
2.4.3 試片放入反應腔前預鍍.....................................................12
2.4.4在P-Si上貼上Mask(不鏽鋼遮罩)..............................................13
2.4.5 試片放入反應腔後預鍍.....................................................13
2.4.6 以純氧氧化靶材表面.......................................................13
2.4.7 濺鍍氧化銦錫(ITO)層......................................................13
2.4.8 蒸鍍Ag層作為電極並移除Mask...............................................14
2.5 在負型矽基版上的ITO薄膜特性剖析.............................................14
2.5.1 霍爾效應量測儀...........................................................14
2.5.2 場發射掃描式電子顯微儀(FE-SEM)............................................14
2.5.3 X光繞射儀(XRD).........................................................14
2.5.4 紫外光/可見光/紅外光光譜量測系統(UV/VIS/IR)...............................14
2.6 TLM接觸電阻量測及順偏變溫I-V量測...........................................15
2.6.1 TLM接觸電阻計算與太陽能I-V量測...........................................15
2.6.2 藉由順偏變溫I-V量測求得蕭基能障(BN)......................................15
第三章 負型單晶矽與氧化銦錫之介面特性研究........................................28
3.1 改變濺鍍功率對氧化銦錫薄膜特性的影響及材料分析...............................28
3.1.1 改變濺鍍功率對氧化銦錫薄膜特性之SEM與XRD量測...............................28
3.1.2 改變濺鍍功率對氧化銦錫薄膜特性之霍爾效應量測................................29
3.1.3 結論....................................................................30
3.2 高濺鍍功率下，探討使用空氣及純氧對氧化銦錫(ITO)預鍍後處理之特性影響及材料分析...30
3.2.1 高濺鍍功率下，探討使用空氣及純氧對氧化銦錫(ITO)預鍍後處理之特性之SEM與XRD量測.30
3.2.2 高濺鍍功率下，探討使用空氣及純氧對氧化銦錫(ITO)預鍍後處理之特性之霍爾效應量測與紫外光/可見光/紅外光量測........................................................31
3.2.3 結論....................................................................32
3.3 在純氧對氧化銦錫(ITO)預鍍後處理下，探討不同濺鍍功率對氧化銦錫與負型矽的接觸電阻之影響............................................................................32
3.3.1 在純氧對氧化銦錫(ITO)預鍍後處理下，探討不同濺鍍功率對氧化銦錫與負型矽的介面之接觸電阻影響.....................................................................32
3.3.2結論.....................................................................33
3.4 在純氧對氧化銦錫(ITO)預鍍後處理下，探討不同濺鍍功率對氧化銦錫與負型矽的介面之變溫順偏I-V影響.....................................................................33
3.4.1 在純氧對氧化銦錫(ITO)預鍍後處理下，探討不同濺鍍功率對氧化銦錫與負型矽的介面之變溫順偏I-V影響..................................................................33
3.4.2結論.....................................................................34
3.5在純氧對氧化銦錫(ITO)預鍍後處理下，探討不同濺鍍功率對氧化銦錫薄膜特性的影響及材料分析............................................................................34
3.5.1在純氧對氧化銦錫(ITO)預鍍後處理下，探討不同濺鍍功率對氧化銦錫薄膜特性之SEM與XRD量測............................................................................34
3.5.2結論.....................................................................35
第四章 結論總結及未來之展望.....................................................54
4.1 總結論....................................................................54
4.2 未來之展望................................................................54
參考文獻......................................................................55
Extended Abstract.............................................................58
Abstract......................................................................58
Introduction..................................................................59
Experimental..................................................................59
Results and Discussion........................................................60
Conclusions...................................................................61
References....................................................................61

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