臺灣博碩士論文加值系統

本論文研究蒸鍍銦摻雜二氧化鉬及濺鍍氧化銅銦對網印式單晶矽太陽能電池光電特性之影響。第一個主題利用銦摻雜二氧化鉬形成氧化銦保護層，用來避免二氧化鉬與水氣結合，導致光電轉換效率大幅的下降，分別用銦堆疊與銦摻雜二氧化鉬兩種方式形成薄膜對太陽能電池光電特性之影響，同時觀察改變銦濃度對二氧化鉬暴露大氣退化之影響，再以X射線光電子能譜儀(XPS)分析銦摻雜二氧化鉬薄膜組成。而第二個主題藉由氧化銅銦有著與p型矽匹配的功函數及寬能隙，形成電子阻擋層來避免電子與電洞在矽表面復合，藉由改變射頻濺鍍功率、時間、工作壓力及電極材料，探討氧化銅銦薄膜對太陽能電池的光電特性影響，最後使用XPS、紫外光電子能譜儀(UPS)、UV/VIS/IR光譜儀、穿透式電子顯微鏡(TEM)來分析氧化銅銦的材料特性。
第一個主題實驗結果顯示，薄膜在二氧化鉬上堆疊銦的方式下暴露於大氣中，其光電轉換效率隨著銦厚度增加而下降，當蒸鍍銦摻雜二氧化鉬且暴露大氣10分鐘時其光電轉換效率為20.52 %，與二氧化鉬未暴露於大氣中的轉換效率相同，證明有效改善二氧化鉬與水氣接觸退化的問題，第二個主題實驗結果顯示，當濺鍍氧化銦銅功率為20 W、濺鍍時間1分鐘、工作壓力為5 mTorr並搭配濺鍍銀電極時，其光電轉換效率為19.02 %，開路電壓0.629 V、短路電流密度36.5 mA/cm2、串聯電阻1.56 Ω-cm2、填充因子82.76 %，經由材料分析獲得氧化銦銅的能隙3.5 eV，功函數4.1 eV，價帶偏移為0.94 eV。

In this study, the effects of evaporated indium-doped molybdenum oxide and sputtered copper indium oxide on photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPMSSCs) were investigated. In the first topic, the protected layer was formed by In-doped into MoO2. The combination of MoO2 and moisture was avoided by this protected layer to enhance the conversion efficiency (CE). The effects of films formed by indium/MoO2 stacked and In-doped MoO2 on photovoltaic characteristics of the SPMSSCs were presented. Moreover, air ambient degradation of MoO2 was observed by tuning the concentration of indium in MoO2. The composition of In-doped MoO2 was analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, CuInO2 with a wide bandgap and low valance band offset (VBO) can be used as electron-blocking layers (EBLs) to prevent the recombination of electron-hole pairs on silicon surface. The effects of CuInO2 EBLs on photovoltaic characteristics of SPMSSCs were investigated by various parameters, including power, time, working pressure, and electrode materials. Finally, the material properties of CuInO2 were analyzed by XPS, ultraviolet photoelectron spectroscopy (UPS), UV/VIS-IR spectroscopy, Transmission Electron Microscopy (TEM).
The results indicate that the CE decreases with increasing the thicknesses of indium in MoO2. Compared with the MoO2 without In-doping, the degradation of the CE was slightly for In-doped MoO2 under air ambient for 10 min. According to optimum conditions, the open-circuit voltage of 0.629 V, short-circuit current density of 36.5 mA/cm2, series resistance of 1.56 Ω-cm2, fill factor of 82.76 % and the CE of 19.02 % were achieved at power of 20 W for 1 min, working pressure of 5 mTorr, argon flow of 12 sccm and silver electrode. The CuInO2 with bandgap of 3.5 eV, work function of 4.1 eV, and VBO of 0.94 eV, was demonstrated.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vii
圖目錄...viii
第一章 緒論...1
1.1 載子選擇性接觸材料應用於太陽能電池之文獻回顧...1
1.2 銦摻雜氧化物及金屬之相關論文...2
1.3 氧化銅銦之相關論文...3
1.4 研究動機...4
1.5論文架構...4
第二章 實驗流程與特性量測...6
2.1 大氣氛圍對蒸鍍銦摻雜二氧化鉬(MoO2)效應之前段實驗流程...6
2.1.1 清洗矽晶片及去除自然氧化層(Native oxide)...6
2.1.2 使用氫氧化鉀(KOH)混和溶液對矽晶片表面進行糙化(Texture)...7
2.1.3 使用高溫爐管對矽晶片進行磷擴散(Diffusion)及趨入(Drive-in)以形成n+射極層...7
2.1.4 利用氫氟酸(HF)去除因磷擴散而形成之磷玻璃(PSG)...7
2.1.5 藉由以氫氟酸(HF)、硝酸(HNO3)和硫酸(H2SO4)等混和溶液進行邊緣絕緣(Edge isolation)及背表面拋光(Polished)...8
2.1.6 使用電漿增強化學氣相沉積系統(Plasma-enhanced chemical vapor deposition, PECVD)沉積氮化矽(SiNx)抗反射層(ARC)於矽晶片正表面的n+射極層上...8
2.1.7 利用網印機將銀膠網印(Screen-printing)至正表面的氮化矽(SiNx)上並烤乾形成銀電極...8
2.1.8 藉由燒結爐的高溫將銀電極燒結並刺穿氮化矽(SiNx)...8
2.1.9 使用雷射切割機將矽晶片切割成2 cm × 2 cm大小的試片...9
2.1.10 利用旋轉塗佈的方式旋塗兩層抗蝕刻阻擋層(Polymer)於正表面並加熱烤乾...9
2.1.11 浸泡氫氟酸(HF)去除背表面的自然氧化層(Native oxide)...9
2.2 改變二氧化鉬(MoO2)上堆疊不同銦(In)之厚度、暴露大氣時間與蒸鍍銀電極厚度...9
2.2.1 蒸鍍二氧化鉬(MoO2)於矽晶片背表面作為電洞選擇性接觸層...10
2.2.2 蒸鍍不同厚度之銦(In)於背表面二氧化鉬(MoO2)層上...10
2.2.3 將腔體破真空讓試片暴露於空氣中並改變破真空環境及時間...10
2.2.4 蒸鍍不同厚度之銀(Ag)電極於背表面銦(In)上...10
2.3改變二氧化鉬(MoO2)內摻雜銦(In)之濃度及暴露大氣時間...11
2.4改變射頻濺鍍氧化銅銦(CuInO2)之功率與時間...11
2.4.1 以不同射頻濺鍍功率與時間濺鍍氧化銅銦(CuInO2)於矽晶片背表面作為電子阻擋層...11
2.4.2 直流濺鍍銀電極於背表面氧化銅銦(CuInO2)層上...11
2.5 以最佳射頻濺鍍功率及時間，改變射頻濺鍍氧化銅銦(CuInO2)之工作壓力...12
2.6 在最佳射頻濺鍍功率、時間及工作壓力，改變直流濺鍍銀及銅金屬電極...12
2.7太陽能光伏元件電性量測與表面材料分析...12
2.7.1 電流-電壓量測(I-V measurement)...12
2.7.2 穿透式電子顯微鏡(Transmission electron microscopy, TEM)分析...12
2.7.3 X射線光電子能譜儀(X-Ray Photoelectron Spectroscopy, XPS)與紫外光電子能譜儀(Ultraviolet photoelectron spectroscopy, UPS)分析...13
2.7.4 紫外光/可見光/近紅外光(UV/VIS/IR)分光光譜儀量測...13
第三章 大氣氛圍對蒸鍍銦(In)摻雜二氧化鉬(MoO2)效應於網印式單晶矽太陽能電池光電特性之影響...29
3.1 改變二氧化鉬(MoO2)上堆疊不同銦(In)之厚度、暴露大氣時間與蒸鍍銀(Ag)電極厚度之電流-電壓量測(I-V Measurement)結果分析...29
3.1.1 結論...30
3.2 改變二氧化鉬(MoO2)內摻雜銦(In)之濃度及暴露大氣時間之電流-電壓量測(I-V Measurement)及XPS量測結果分析...30
3.2.1 結論...32
第四章 射頻濺鍍氧化銅銦(CuInO2)對網印式單晶矽太陽能電池光電特性之影響...42
4.1 改變射頻濺鍍氧化銅銦功率與時間之電流-電壓量測(I-V Measurement)結果分析...42
4.1.1 結論...43
4.2 以最佳射頻濺鍍功率及時間，改變射頻濺鍍氧化銅銦工作壓力之電流-電壓量測(I-V Measurement)結果分析...43
4.2.1 結論...44
4.3 在最佳射頻濺鍍功率、時間及工作壓力，改變直流濺鍍銀及銅金屬電極之電流-電壓量測(I-V Measurement)結果分析...44
4.3.1 結論...45
4.4 濺鍍氧化銅銦之穿透式電子顯微鏡(TEM)、X射線光電子能譜儀(XPS)、紫外光電子能譜儀(UPS)及紫外光/可見光/近紅外光(UV/VIS/IR)分光光譜儀量測結果分析...45
4.4.1 穿透式電子顯微鏡(TEM)量測...45
4.4.2 X射線光電子能譜儀(XPS)量測...45
4.4.3 紫外光電子能譜儀(UPS)量測...46
4.4.4 紫外光/可見光/近紅外光(UV/VIS/IR)分光光譜儀量測...46
第五章 總結論與未來展望...58
5.1 總結論...58
5.2 未來展望...58
參考文獻...59
Extended Abstract...63
Abstract...63
Introduction...64
Experimental...64
Results and Discussion...65
Conclusions...65
References...66

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