本研究利用射頻磁控共濺鍍系統，在n型氮化鎵(電子載子濃度約為-8.51×1018)磊晶層上沉積未摻雜氧化鋅薄膜，並利用適當熱退火條件優化氧化鋅薄膜的光電特性以及電子載子濃度(~3×1017 cm-3)，接著，再利用氧化鋅與氮化鋁靶材，在未摻雜氧化鋅薄膜表面沉積氮化鋁-氧化鋅共濺鍍薄膜，並經由熱處理製程活化氮化鋁-氧化鋅薄膜中的受體離子(電洞載子濃度約為5×1018 cm-3)，利用光激發光螢光光譜圖可以得知為穩定的p型導電型態，接著製備p型氮化鋁-氧化鋅/本質氧化鋅/n型氮化鎵之p-i-n異質接面結構，利用電流-電壓特性發現，雖然為整流特性，但是因為啟動電壓與串聯電阻很小，很容易造成穿隧效應，位障電位只有0.58 eV，為了改善p-i-n異質接面二極體的元件整流特性，本研究在未摻雜氧化鋅與p型氮化鋁-氧化鋅介面處濺鍍氮化鋁侷限層，提高二極體元件操作時注入電子載子在未摻雜氧化鋅層的侷限能力，並探討不同氮化鋁侷限層厚度對於p-i-n結構的光電與二極體元件特性的影響，研究結果顯示，加入氮化鋁侷限層後利用電流-電壓特性發現因為氮化鋁絕緣特性，使得串聯電阻大幅上升至1.17 V，穿隧電流下降，障壁電位為0.88 eV，更加接近理想值(1.04 eV)，接著利用歐傑電子能譜儀發現，利用高溫爐管之p-i-n二極體，在p-AlN-ZnO與AlN間介面處有明顯的鋁原子擴散現象，造成介面缺陷，使得二極體整流特性受影響。為了避免p型氮化鋁-氧化鋅退火處理的熱擴散效益，造成二極體元件特性的衰退，研究中亦討論p型氮化鋁-氧化鋅活化條件對於p-i-n異質接面二極體元件的影響，結果顯示，降低熱擴散方式之p-AlN-ZnO利用霍爾電特性及光激發光螢光光譜圖發現，並不會影響共濺鍍薄膜特性，接著比較共濺鍍薄膜改善熱運算前後之p-i-n異質接面二極體元件，可以發現啟動電壓為1.42 V，串聯電阻上升為457 Ω，位障電位也提升至0.98 eV，利用歐傑電子能譜儀發現利用降低熱運算時間可以大幅改善鋁原子擴散的情形，接著，利用電激發光螢光光譜量測發現，發光強度相當微弱，CIE座標為(0.36,0.35)，主要發光波長為509 nm之氧缺陷發光峰值。

In this study, a radio frequency magnetron co-sputtering system was used to deposit an undoped zinc oxide film on the n-type gallium nitride (electron carrier concentration is about -8.51×1018) epitaxial layer, and the zinc oxide was optimized by appropriate thermal annealing conditions The photoelectric properties of the film and the electron carrier concentration (~3×1017 cm-3). Then, using zinc oxide and aluminum nitride targets, the aluminum nitride-zinc oxide co-sputtering is deposited on the surface of the undoped zinc oxide film The film is activated by a heat treatment process to activate the acceptor ions in the aluminum nitride-zinc oxide film (the hole carrier concentration is about 5×1018 cm-3). The light-excited fluorescence spectrum can be known as a stable p Type conductivity type, and then prepare a pin heterojunction structure of p-type aluminum nitride-zinc oxide/intrinsic zinc oxide/n-type gallium nitride. Using current-voltage characteristics, it is found that although it is a rectifier characteristic, it is because the starting voltage is connected in series The resistance is very small and it is easy to cause tunneling effect. The barrier potential is only 0.58 eV. In order to improve the device rectification characteristics of the pin heterojunction diode, this study used the undoped zinc oxide and p-type aluminum nitride-zinc oxide interface Sputter the aluminum nitride confined layer at the place to improve the confinement ability of injecting electron carriers in the undoped zinc oxide layer during the operation of the diode device, and discuss the effect of different aluminum nitride confinement layer thickness on pin structure optoelectronic and diode devices The impact of characteristics, the research results show that the current-voltage characteristics of the aluminum nitride confined layer are used to find that due to the insulating properties of aluminum nitride, the series resistance has risen to 1.17 V, the tunneling current drops, and the barrier potential is 0.88 eV, which is closer to the ideal value (1.04 eV), and then use the OJ electronic spectrometer to find that the pin diode of the high temperature furnace tube has obvious aluminum atom diffusion phenomenon at the interface between p-AlN-ZnO and AlN, causing interface defects, making the diode Rectification characteristics are affected. In order to avoid the thermal diffusion benefit of the p-type aluminum nitride-zinc oxide annealing treatment, resulting in the degradation of the characteristics of the diode element, the study also discussed the p-type aluminum nitride-zinc oxide activation condition for the pin heterojunction diode element The results show that the reduction of thermal diffusion of p-AlN-ZnO using Hall electrical characteristics and light-excited fluorescence spectroscopy found that it does not affect the characteristics of the co-sputtered film. Then compare the co-sputtered film to improve the thermal calculation before and after For the pin heterogeneous junction diode element, it can be found that the starting voltage is 1.42 V, the series resistance is increased to 457 Ω, and the barrier potential is also increased to 0.98 eV. It is found that the reduction of thermal operation time can be greatly improved The diffusion of aluminum atoms was followed by measurement of electroluminescence fluorescence spectroscopy and found that the luminous intensity was quite weak. The CIE coordinate was (0.36, 0.35), and the main luminescence wavelength was the oxygen defect luminescence peak at 509 nm.

摘要……i
Abstract……ii
誌謝……iv
目錄…v
表目錄……viii
圖目錄……ix
第一章 緒論……1
1-1 前言……1
1-2 文獻回顧……1
1-2-1氧化鋅/氮化鎵異質結構……1
1-2-2鋁摻雜氧化鋅與p型氧化鋅之研究 ……1
1-2-3電子侷限層應用於二極體元件之研究……3
1-3 研究動機與目的……3
第二章 理論基礎……7
2-1 電漿理論……7
2-2 射頻磁控濺鍍原理……8
2-3 薄膜成核理論……8
2-4 薄膜材料特性簡介……8
2-4-1 氧化鋅薄膜……9
2-4-2 金屬薄膜……9
2-4-3 氧化銦錫薄膜……9
2-4-4 氮化鋁薄膜……10
2-5 金屬與半導體接觸理論……11
2-5-1 歐姆接觸理論……11
2-5-2 傳輸線模型【55-57】……11
第三章 實驗製程方法與步驟……21
3-1共濺鍍薄膜製作流程……21
3-1-1 基板清洗……21
3-1-2 濺鍍系統【56】……21
3-1-3鍍膜製作流程……22
3-2 傳輸線模型製程流程……22
3-3 二極體製程流程……23
3-3-1未摻雜氧化鋅為底層的二極體同質結構……23
3-3-2 n型氮化鎵為底層的二極體異質結構……24
3-3-3 p型氮化鎵為底層的二極體異質結構……24
3-4 實驗儀器量測原理……25
3-4-1 表面輪廓分析儀……25
3-4-2 霍爾量測系統……25
3-4-3 光學穿透率量測……26
3-4-4 光激發螢光量測【57】【58】……26
3-4-5 半導體參數分析儀……27
3-4-6 歐傑能譜儀(AES)……27
4-1 n-GaN/i-ZnO/p-AlN-ZnO二極體元件之特性分析……36
4-1-1 i-ZnO薄膜特性分析……36
4-1-2共濺鍍AlN-ZnO薄膜特性分析……37
4-1-3 Ni/ITO/p-ZnO歐姆接觸以及Ti/Al/n-GaN歐姆接觸特性……38
4-1-4 n-GaN/i-ZnO/p-AlN-ZnO二極體元件特性分析……38
4-2在p-AlN-ZnO/i-ZnO/n-GaN結構中加入AlN侷限層對於二極體元件特性影響之研究……40
4-2-1共濺鍍AlN-ZnO沉積在氮化鋁侷限層之薄膜特性及應用於n-i-p二極體元件特性分析……41
4-2-2共濺鍍AlN-ZnO沉積在不同厚度AlN侷限層之薄膜特性及其應用於n/i/p二極體元件特性分析……43
4-3 p-AlN-ZnO熱處理製程對p-AlN-ZnO/i-ZnO/n-GaN元件特性影響之研究……45
4-3-1 p-AlN-ZnO改變熱處理製程薄膜特性分析……45
4-3-2以快速熱退火活化p-AlN-ZnO薄膜應用於p-AlN-ZnO/AlN/i-ZnO/n-GaN之二極體元件製作之特性分析……47
第五章 結論與未來工作……74
參考文獻……76
Extended Abstract……81

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