本研究是利用溶膠凝膠法搭配靜電紡絲法制備金屬氧化物半導體感測薄膜，搭配指叉式金電極基板製作成為元件，應用於氣體感測器上。第一部分使用靜電紡絲法制備一維奈米纖維紡絲結構，藉由紡絲控制器控制各項製程參數，進一步達到奈米等級之尺度，將蒐集好的ZnO紡纖維收集好，經過鍛燒後除去高分子後使材料形成多晶結構，形成感測薄膜並對不同目標氣體做氣體感測，在工作溫度200℃狀態下，感測膜材料對於硫化氫的響應狀況良好，並且有著良好的再現性與恢復性，對於濃度也有著不錯的分辨力。第二部分使用靜電紡絲法透過不同濃度氯化銅摻雜製作金屬氧化物半導體複合材料，找出最佳摻雜比例濃度，形成ZnO-CuO異質結構，探討不同鍛燒溫度溫度對於材料之影響，並且發現在摻雜1:0.15比例後對於硫化氫響應有著較高的增強效果，在200℃下有著83.98%的響應值，相較於為摻雜前提升了約25%的響應值。

In this study, a metal oxide semiconductor sensing film was prepared by a sol-gel method and an electrospinning method, and was fabricated into a component using a finger-forked gold electrode substrate for use in a gas sensor. The first part uses the electrospinning method to prepare the one-dimensional nanofiber spinning structure. The spinning controller controls the various process parameters to further reach the nanometer scale. The collected ZnO raw textile fibers are collected and forged. After the polymer is removed, the polymer is formed into a polycrystalline structure to form a sensing film and gas sensing is performed on different target gases. At a working temperature of 200 ° C, the sensing film material has a good response to hydrogen sulfide and has a good response. Reproducibility and recovery, also has a good resolution for concentration The second part uses the electrospinning method to make metal oxide semiconductor composites through different concentrations of copper chloride doping, find the optimal concentration ratio of the doping, form the ZnO-CuO heterostructure, and explore the effects of different calcination temperature on the material. It was found that the reaction with hydrogen sulfide had a higher enhancement effect after the 1:0.15 ratio, and had a response value of 83.98% at 200 °C, which was about 25% higher than that before the doping..

摘要 i
ABSTRACT ii
誌謝 iii
表目錄 vi
圖目錄 1
第一章 緒論 3
1.1前言 3
1.2 研究動機與目的 5
第二章 基礎原理介紹與文獻回顧 7
2.1 氧化鋅(ZnO) 7
2.2氧化銅(CuO) 8
2.3 靜電紡絲 9
2.3.1 靜電紡絲簡介 9
2.3.2 靜電紡絲影響因素 11
2.4 氣體感測器 13
2.4.1 氣體感測器簡介 13
2.4.2半導體氣體感測器 15
2.4.3半導體氣體感測器工作原理 16
2.4.4 氣體感測器響應值 21
第三章 實驗架構方法與實驗分析設備 22
3.1實驗架構 22
3.2實驗藥品 23
3.3實驗方法與流程 24
3.3.1第一部分ZnO靜電紡絲纖維製備 24
3.3.2第二部分ZnO-CuO靜電紡絲纖維製備 26
3.4 氣體感測器元件製程 28
3.4.1 晶圓清潔 28
3.4.2 加熱氧化製程 30
3.4.3 感測電極製程 30
3.4.4試片清潔 33
3.5 實驗製程設備 34
3.5.1 Wet bench 34
3.5.2自動光阻塗佈及顯影系統 34
3.5.3光罩對準曝光機 (Mask aligner) 35
3.5.4電子槍蒸鍍系統 (EB + RH Deposition System) 35
3.5.6磁石攪拌器 36
3.5.7高溫爐 37
3.5.8離子濺鍍機 37
3.5.9超音波洗淨機 38
3.5.10 旋轉塗佈機 38
3.6 實驗分析儀器 39
3.6.1 高解析穿透電子顯微鏡(HR-AEM) 39
3.6.2 高解析場發射掃描式電子顯微鏡(Ultrahigh Resolution Scanning Electron Microscope, UHRFE-SEM) 39
3.6.3多功能X光薄膜繞射儀(Mutiourpose X-Ray Thin-Film Diffractiometer, XRD) 40
3.6.4熱分析儀(Thermal analyzers, TGA) 40
3.6.5氣體感測系統 41
第四章 結果與討論 42
4.1 靜電紡絲法製備ZnO奈米纖維應用於氣體感測器 42
4.1.1 靜電紡絲製備ZnO奈米纖維在不同工作電壓之影響 42
4.1.2 ZnO紡絲纖維熱重分析 44
4.1.3 ZnO紡絲纖維X光薄膜繞射分析 45
4.1.4 ZnO紡絲纖維之掃描式電子顯微鏡分析 46
4.1.5 ZnO紡絲纖維之穿透式電子顯微鏡分析 48
4.1.6.ZnO紡絲纖維對不同氣體感測 49
4.1.7 ZnO感測器在不同工作溫度下對於H2S響應 50
4.1.8 ZnO纖維對H2S 在1~5 ppm下氣氣體響應比較 51
4.1.9 ZnO對於H2S 在1 ppm下 連續量測氣體響應比較 52
4.1.10 ZnO紡絲纖維對硫化氫反應機制 53
4.2靜電紡絲製備ZnO-CuO奈米纖維應用於氣體感測器 54
4.2.1 ZnO-CuO摻雜參數 54
4.2.2 ZnO-CuO纖維X光薄膜繞射分析 54
4.2.3 ZnO-CuO紡絲纖維之掃描式電子顯微鏡分析 56
4.2.4 ZnO-CuO紡絲纖維之穿透式電子顯微鏡分析 63
4.2.5.ZnO-CuO紡絲纖維對不同氣體感測 65
4.2.6 ZnO-CuO感測器不同工作溫度下對於H2S響應 68
4.2.7 ZnO-CuO不同摻雜濃度之氣體響應比較 69
4.2.8 ZnO-CuO對H2S 在1~5 ppm下氣氣體響應比較 70
4.2.9 ZnO與ZnO-CuO對於H2S 在1 ppm下連續量測氣體響應比較 71
4.2.10 ZnO與ZnO-CuO對硫化氫反應機制 72
第五章 結論與未來展望 75
5.1 結論 75
5.2 未來展望 76
參考文獻 77
個人簡歷 87

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