臺灣博碩士論文加值系統

本論文分為兩個部分，第一部分是以(1-x)TiO2-SrTiO3(x=0~0.1)之陶瓷 材料製作塊體樣品進行分析，探討在不同摻雜比例下(1-x)TiO2-SrTiO3之微 波介電特性，樣品製作之煆燒升溫速率10℃/min，燒結溫度為兩組1200℃ 及1300℃燒結2小時，使用網路分析儀以微波柱狀共振技術來量測塊體樣 品之微波介電特性，結果顯示摻雜比例5mol 在1300℃燒結2小時，樣品具 有最佳之密度。其介電常數會隨著摻雜比例而增加有逐漸增加之趨勢。

第二部分之薄膜材料則是以 TiO2與 SrTiO3粉末以固態反應法製備 (1-x)TiO2-SrTiO3(x=0.05)3吋靶材，作為射頻磁控濺鍍法(RF megenetron sputtering)的靶材，以固定參數、濺鍍壓力、濺鍍時間、濺鍍功率和玻璃基 板加熱的溫度，製備不同比例下的氬氣與氧氣濃度比例的薄膜材料，並使 用網路分析儀以共振腔擾動技術來量測微波介電特性。

This thesis is divided into two parts, The first part adopted on (1-x)TiO2- SrTiO3(x=0~0.1) ceramic material to make bulk sample for analysis. This study investigated the microwave dielectric properties of (1-x)TiO2-SrTiO3 under different doping ratios. The sintering temperature is divided into two groups of 1200 °C and 1300 °C with sintering the for 2 hours and heating rate 10°C/min. The network analyzer was used to measure the microwave dielectric properties of the bulk samples by the post resonance technology. The results show that 5 mol dopant concentration and sintered at 1300 °C for 2 hours has the best sample density. The dielectric constant tends to increase gradually with increasing of the doping ratio the values.

The second part is the study of thin film material of (1-x)TiO2-SrTiO3 (x=0.05). The 3-inch powder target is prepared by a solid-state reaction method with TiO2 and SrTiO3 powders. The target is used as the target of the RF magnetron sputtering system. The reactive RF magnetron sputtering system has fixed parameters of sputtering pressure, sputtering time, sputtering power, and heating temperature for thin film growth on glass substrate. Thin film materials were prepared with different ratios of argon and oxygen concentration ratios. The network analyzer was used to measure the microwave dielectric properties of thin film materials with the resonant cavity perturbation technique.

摘要.....i
Abstract......ii
誌謝.....iii
目錄.....iv
表目錄.....vi
圖目錄.....vii
第一章 緒論.....1
1-1 前言.....1
1-2 研究動機與目的.....1
1-3 論文架構.....1
第二章 基礎理論.....2
2-1 介電理論.....2
2-1-1介電損失.....2
2-1-2極化現象.....2
2-2 介質共振器.....6
2-3 品質因數.....14
2-4 微波量測技術.....17
2-4-1柱狀共振技術.....17
2-4-2共振腔擾動技術.....19
2-5 塊體樣品製作.....15
2-5-1固態反應法.....21
2-5-2固態反應法優缺點.....21
2-5-3燒結.....21
2-6 薄膜材料製作.....22
2-6-1濺鍍原理.....22
2-6-2電漿.....23
2-6-3薄膜成長機制.....23
第三章 實驗方法.....24
3-1 陶瓷粉末介紹.....24
3-1-1二氧化鈦.....24
3-1-2鈦酸鍶.....26
3-2 (1-x)TiO2-xSrTiO3塊體樣品製作.....27
3-2-1塊體樣品實驗方法.....27
3-2-2塊體樣品製備流程......27
3-2-3塊體樣品介電測量分析......27
3-3 (1-x)TiO2-xSrTiO3薄膜材料製作.....30
3-3-1薄膜材料實驗方法.....30
3-3-2靶材製作.....30
3-3-3清洗基板.....30
3-3-4薄膜沉積.....31
3-3-5定義共振頻率.....33
3-3-6校正樣品.....35
3-3-7薄膜介電測量分析.....35
3-4 量測儀器介紹.....36
3-4-1超高解析熱電子型場發射掃描式電子顯微鏡 FE-SEM.....36
3-4-2密度和空隙率量測.....36
3-4-3網路分析儀.....37
第四章 結果與討論.....38
4-1 (1-x)TiO2-xSrTiO3(x=0~0.1)塊體樣品.....38
4-1-1密度與孔隙率分析.....38
4-1-2介電特性分析.....40
4-2 (1-x)TiO2-xSrTiO3(x=0.05)薄膜材料.....42
4-2-1薄膜材料表面與截面SEM分析.....42
4-2-2薄膜材料介電特性分析.....46
第五章 結論.....63
5-1 (1-x)TiO2-SrTiO3(x=0~0.1)塊體樣品.....63
5-2 (1-x)TiO2-SrTiO3(x=0.05)薄膜材料.....63
參考文獻.....64
Extended Abstract.....66

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