臺灣博碩士論文加值系統

本論文利用射頻磁控濺鍍系統沉積氧化鋅鎵(Zinc gallate, ZnGa2O4)薄膜，探討退火與摻雜製程對ZnGa2O4薄膜特性的影響。首先透過退火處理消除薄膜沉積過程產生的缺陷。將ZnGa2O4薄膜退火溫度到900oC時，ZnGa2O4薄膜的晶粒尺寸達最大為27.05 nm，且薄膜應力由壓縮轉變為伸張應力。結果顯示，適當的退火處理能改善ZnGa2O4薄膜的結晶性，降低薄膜中的應力、提升元件效能。進一步在沉積ZnGa2O4薄膜製程中導入反應性氣體氨氣，氨氣中氮原子的摻雜可以降低薄膜內的氧空缺，有助於提升ZnGa2O4薄膜結晶性。最後將ZnGa2O4薄膜在氨氣氣氛下進行退火處理，透過氨氣退火處理將氮原子擴散進ZnGa2O4薄膜，可將其能隙從4.6降至2.1 eV並提升氧化鋅鎵(ZnGa2O4)材料從深紫外到可見光波段的利用率。

Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 films were annealed at a temperature ranging from 500 to 900oC at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900oC. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures. Moreover, the deposited ZnGa2O4 thin films as a function of NH3 flow rate were investigated. From the XRD analysis results, all the N-doped deposited ZnGa2O4 films can be indexed polycrystalline nature of cubic crystal planes. The plane-view SEM picture showed that the NH3 gas flux increasing the ZnGa2O4 films grains densely packed. TEM analysis revealed that the ZnGa2O4 films exhibited nano crystalline grains with an average size of 10~20 nm. The regular ring-like electron diffraction pattern of a selected area implied a polycrystalline structure of ZnGa2O4 film, consistent with the XRD results. These results indicated that the annealing process and N-doping are the effective methods for the improvement of ZnGa2O4 thin films crystallinity.

中文摘要…………………………………………………………………………………i
Abstract…………………………………………………………………………………ii
誌謝……………………………………………………………………………………………iv
目錄……………………………………………………………………………………………v
表目錄………………………………………………………………………………………vii
圖目錄………………………………………………………………………………………viii
第一章 緒論……………………………………………………………………………1
1.1 前言……………………………………………………………………………………1
1.2 研究動機…………………………………………………………………………2
第二章 理論基礎及文獻回顧…………………………………………4
2.1物理氣相沉積…………………………………………………………………4
2.2磁控濺鍍沉積…………………………………………………………………4
2.3薄膜沉積原理…………………………………………………………………6
2.4文獻評論……………………………………………………………………………8
第三章 實驗流程與儀器介紹…………………………………………13
3.1 實驗材料…………………………………………………………………………13
3.1.1實驗基板………………………………………………………………………13
3.1.2 濺鍍靶材……………………………………………………………………13
3.1.3 製程氣體……………………………………………………………………13
3.1.4 化學藥品……………………………………………………………………13
3.2試片前處理………………………………………………………………………14
3.3實驗設備……………………………………………………………………………14
3.3.1射頻磁控濺鍍系統……………………………………………………14
3.3.1熱處理系統……………………………………………………………………15
3.4實驗流程………………………………………………………………………………15
3.5 分析儀器及原理……………………………………………………………17
3.5.1紫外光/可見光光譜儀……………………………………………17
3.5.2穿透式電子顯微鏡……………………………………………………17
3.5.3場發射掃描式電子顯微鏡………………………………………18
3.5.4原子力顯微鏡………………………………………………………………19
3.5.5 X-ray繞射分析儀……………………………………………………20
3.5.6光激發螢光光譜儀……………………………………………………22
3.5.7 X-ray光電子能譜儀………………………………………………23
第四章 實驗結果與討論……………………………………………………31
4.1 氧化鋅鎵薄膜特性影響之探討………………………………31
4.2 退火溫度對氧化鋅鎵薄膜結構之影響………………36
4.3摻雜氮原子對氧化鋅鎵薄膜特性影響之探討……41
4.4氨氣退火對氧化鋅鎵薄膜特性影響之探討…………45
第五章 結論………………………………………………………………………………76
參考文獻………………………………………………………………………………………78
Extended Abstract……………………………………………………………84
 

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