臺灣博碩士論文加值系統

本研究論文探討氧化銦鈰應用於網印式單晶矽太陽能電池光電特性之影響，因氧化銦鈰(ICO)具有高移動率、低載子濃度、在近紅外光的區域有優秀的穿透率、可作為太陽能電池的透明導電層、串接電池之間的連接層，與氧化銦錫(ITO)相比有更好的短路電流與光電轉換效率，因此本論文研究氧化銦鈰沉積在玻璃基板與網印式單晶矽太陽能電池的正面，實驗參數包含低濺鍍功率下，摻氫含量對氧化銦鈰的影響、改變濺鍍功率從45 變化至145 W、高濺鍍功率下，氬氣流量對氧化銦鈰的影響、高濺鍍功率下，濺鍍壓力對氧化銦鈰的影響、預鍍後，用空氣與純氧對氧化銦鈰作後處理，同時，透過霍爾效應分析儀、紫外光/可見光/近紅外光光譜儀、熱電子型場發射掃描式電子顯微鏡以及X射線繞射儀，獲取移動率、載子濃度、穿透率、厚度、表面形貌、晶格方向以及晶粒大小等結果，最後應用至網印式單晶矽太陽能電池上面，探討對光電轉換效率的衰減率。 實驗結果顯示，在55 W的低功率下，且ICO薄膜內氫含量從0 %至5 %時，ICO薄膜沈積在玻璃基板上的電阻率仍高達102 Ω-cm，當靶材的功率增加，其電阻率下降，當靶材超過135W時，靶材表面有放電現象會影響實驗結果，為保護靶材，濺鍍功率的極限值為135 W，可獲得電阻率為8.7 × 10-2 Ω-cm。在高功率下，當氬氣流量增加，其電阻率下降至1.73 × 10-3 Ω-cm，在高功率下，當濺鍍壓力為5 mTorr，可獲得電阻率為1.49 × 10-3 Ω-cm，在高功率下，預鍍後，用空氣與純氧對ICO作後處理，實驗結果顯示，用空氣與純氧對ICO作後處理，可獲得相近的電阻率為1.49 × 10-3 Ω-cm與1.55 × 10-3 Ω-cm，且將ICO沈積於網印式單晶矽太陽能電池上面，其光電轉換效率分別衰減5.24 %與5.09 %，可知微量的純氧對ICO的影響甚微。

Effects of indium cerium oxide (ICO) on photovoltaic characteristics of screen-printed monocrystalline silicon solar cells were achieved in this thesis. The ICO possesses high mobility, low carrier concentration, excellent transparency in the near-infrared region, and can serve as a transparent conductive layer for solar cells, as well as a connecting layer between stacked cells. Compared to indium tin oxide (ITO), it exhibits better short-circuit current and photoelectric conversion efficiency. Therefore, the deposition of ICO on the front side of glass substrates and screen-printed monocrystalline silicon solar cells were investigated in this thesis. The experimental parameters, including the effects of hydrogen doping on indium cerium oxide (ICO) at low sputtering power, varying the sputtering power from 45 to 145 W, the impact of argon gas flow on ICO at high sputtering power, the influence of sputtering pressure on ICO at high sputtering power, and post-deposition treatments of ICO using air and pure oxygen. Additionally, through Hall effect analysis, UV/visible/near-infrared spectrometer, thermionic field emission scanning electron microscopy, and X-ray diffraction, results such as mobility, carrier concentration, transmittance, thickness, surface morphology, crystal orientation, and grain size are obtained. Finally, these results are applied to screen-printed monocrystalline silicon solar cells to investigate the decay rate of the conversion efficiency. The experimental results indicate that as at a low power of 55 W, and with hydrogen content within the ICO film ranging from 0 % to 5 %, the resistivity of the ICO film deposited on the glass substrate remains as high as 102 Ω-cm. the power of the target increases, its resistivity decreases. However, when the target exceeds 135 W, there is a phenomenon of discharge on the target surface that affects the experimental results. To protect the target, the upper limit of the sputtering power is 135 W, at which a resistivity of 8.7 × 10-2 Ω-cm can be obtained. At high power, when the argon gas flow rate increases, the resistivity decreases to 1.73 × 10-3 Ω-cm. At high power, when the sputtering pressure is 5 mTorr, a resistivity of 1.49 × 10-3 Ω-cm can be achieved. At high power, post-deposition treatment of ICO with air and pure oxygen resulted in similar resistivities of 1.49 × 10-3 Ω-cm and 1.55 × 10-3 Ω-cm, respectively. When ICO was deposited on screen-printed monocrystalline silicon solar cells, the photoelectric conversion efficiency decreased by 5.24 % and 5.09 %, respectively, indicating minimal impact from trace amounts of pure oxygen on ICO.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...viii
圖目錄...ix
第一章 緒論...1
1.1 鈣鈦礦與矽串接太陽能電池之文獻回顧...1
1.2 透明導電氧化物(TCO)用於矽基太陽能光電元件之文獻回顧...1
1.3 氧化銦鈰(ICO)用於光電元件之文獻回顧...3
1.4 研究動機...4
1.5 論文架構...4
第二章 實驗流程與特性量測...5
2.1 氫摻雜氧化銦鈰之前段實驗流程...5
2.1.1使用RCA流程清洗P-Si晶片表面自然氧化層與表面的灰塵...5
2.1.2使用KOH、IPA以及DIW混合溶液糙化P-Si晶片表面...6
2.1.3透過高溫爐管將磷在P-Si晶片表面進行擴散形成P-Si/N+-Si接面...6
2.1.4透過熱退火使N+射極層的晶粒重組並消除應力...6
2.1.5透過氫氟酸混合溶液將P-Si晶片擴散時生長出的磷玻璃去除並使P-Si晶片邊緣隔絕...6
2.1.6在N+射極上透過PECVD沉積一層氮化矽為抗反射層...6
2.1.7透過網印機在氮化矽上網印銀膠並利用Hot Plate烤乾銀膠...7
2.1.8透過網印機在P-Si晶片的背面先網印鋁膠再網印銀膠並利用Hot Plate烤乾...7
2.1.9透過高溫燒結爐使P-Si晶片正面的銀膠穿過抗反射層與N+-Si接觸以及背面的鋁膠與P-Si晶片背面接觸...7
2.2在低功率條件下，改變氫含量之ICO:H對網印式單晶矽太陽能電池光電特性影響...7
2.2.1 在腔體內無試片之下，預鍍ICO靶材...8
2.2.2 將P-Si晶片透過雷射切割機切至20 × 20 mm2的試片大小...8
2.2.3 鍍薄膜前，進行太陽能電池I-V量測，得知試片效率...8
2.2.4 在P-Si晶片正面以不同含量的氫氣濺鍍ICO:H薄膜...8
2.2.5 鍍薄膜後，進行太陽能電池I-V量測，得知試片效率後，進行衰減率的計算...8
2.3在低功率條件下，改變氫含量之ICO:H薄膜特性分析...9
2.3.1 在腔體內無試片之下，預鍍ICO靶材...9
2.3.2將P-Si晶片透過雷射切割機切至實驗所需的試片大小...9
2.3.3在P-Si晶片與玻璃基板的正面以不同的氫含量濺鍍ICO:H薄膜...9
2.3.4鍍薄膜後，分別透過Hall量測、UV/VIS/NIR量測薄膜特性...9
2.4不同濺鍍功率對ICO薄膜特性分析...10
2.4.1 在腔體內無試片之下，預鍍ICO靶材...10
2.4.2將P-Si晶片透過雷射切割機切至實驗所需的試片大小...10
2.4.3在P-Si晶片與玻璃基板的正面以不同的濺鍍功率濺鍍ICO薄膜...10
2.4.4鍍薄膜後，分別透過Hall量測、FE-SEM、XRD量測薄膜特性...10
2.5高濺鍍功率條件之下，不同氬氣流量以及濺鍍壓力對ICO薄膜特性分析...11
2.5.1 在腔體內無試片之下，預鍍ICO靶材...11
2.5.2將P-Si晶片透過雷射切割機切至實驗所需的試片大小...11
2.5.3在P-Si晶片與玻璃基板的正面以不同的氬氣流量以及濺鍍壓力濺鍍ICO薄膜...11
2.5.4鍍薄膜後，分別透過Hall量測、FE-SEM、XRD、UV/VIS/NIR量測薄膜特性...12
2.6預鍍後，用空氣與純氧對靶材後處理之ICO對網印式單晶矽太陽能電池光電特性影響...12
2.6.1 在腔體內無試片之下，預鍍ICO靶材...12
2.6.2 將P-Si晶片透過雷射切割機切至20 × 20 mm2的試片大小...13
2.6.3 鍍薄膜前，進行太陽能電池I-V量測，得知試片效率...13
2.6.4 用空氣與純氧使靶材氧化並濺鍍ICO薄膜於P-Si晶片之上...13
2.6.5 鍍薄膜後，進行太陽能電池I-V量測，得知試片效率後，進行衰減率的計算...13
2.7用空氣與純氧使靶材氧化對ICO的薄膜特性分析...13
2.7.1 在腔體內無試片之下，預鍍ICO靶材...14
2.7.2將P-Si晶片透過雷射切割機切至實驗所需的試片大小...14
2.7.3在P-Si晶片與玻璃基板的正面用空氣與純氧使靶材氧化並濺鍍ICO薄膜...14
2.7.4鍍薄膜後，分別透過Hall量測、FE-SEM、XRD、UV/VIS/NIR量測薄膜特性...14
第三章 氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究...32
3.1在低濺鍍功率的條件之下，氫摻雜氧化銦鈰(ICO:H)對網印式單晶矽太陽能電池光電特性研究...32
3.1.1 在低濺鍍功率的條件之下，改變氫含量之ICO:H對網印式單晶矽太陽能電池光電特性影響...32
3.1.2 結論...33
3.2在低濺鍍功率的條件之下，改變氫含量之ICO:H薄膜特性分析...33
3.2.1 Hall 量測...33
3.2.2 UV/VIS/NIR 量測...33
3.2.3 結論...34
3.3不同濺鍍功率之ICO薄膜特性分析...34
3.3.1 Hall 量測...34
3.3.2 XRD 量測...34
3.3.3 FE-SEM 量測...35
3.3.4 結論...35
3.4不同氬氣流量之ICO薄膜特性分析...35
3.4.1 Hall 量測...36
3.4.2 UV/VIS/NIR 量測...36
3.4.3 XRD 量測...36
3.4.4 FE-SEM 量測...36
3.4.5結論...36
3.5不同濺鍍壓力之ICO薄膜特性分析...37
3.5.1 Hall 量測...37
3.5.2 UV/VIS/NIR 量測...37
3.5.3 XRD 量測...38
3.5.4 FE-SEM 量測...38
3.5.5結論...38
3.6在高濺鍍功率的條件之下，空氣與純氧對氧化銦鈰預鍍後處理對網印式單晶矽太陽能電池光電特性研究...38
3.6.1 在高濺鍍功率的條件之下，空氣與純氧對氧化銦鈰預鍍後處理對網印式單晶矽太陽能電池光電特性...39
3.6.2 結論...39
3.7在高濺鍍功率的條件之下，空氣與純氧對氧化銦鈰預鍍後處理之ICO薄膜特性分析...39
3.7.1 Hall 量測...40
3.7.2 UV/VIS/NIR 量測...40
3.7.3 XRD 量測...40
3.7.4 FE-SEM 量測...40
3.7.5結論...41
第四章 總結論與未來展望...72
4.1 總結論...72
4.2未來展望...72
參考文獻...73
Extended Abstract...76
Abstract...76
Introduction...77
Experimental...78
Results and Discussion...78
Conclusions...79
References...80

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