臺灣博碩士論文加值系統

本研究利用射頻磁控共濺鍍系統沉積厚度為300 nm氧化鋅薄膜，利用氮氣環境快速熱處理製程改善氧化鋅電子濃度至7.15×1018 cm-3 ，之後再以不同莫爾濃度之稀釋鹽酸(HCl)溶液(濃度分別為20 mM、35 mM、50 mM)進行濕式蝕刻(蝕刻深度100 nm)用以製備粗糙化氧化鋅。為了氧化鋅有著更好的結構表面，將PS 奈米球以轉速1000 rpm，旋塗時間3分鐘的方式應用在矽基板、氮化鎵基板及氧化鋅薄膜上，觀察其旋塗後的表面形貌，最後以氮化鎵基板上旋塗奈米球後，沉積厚度為200 nm氧化鋅薄膜，再利用快速熱處理製程改善氧化鋅載子濃度並使奈米球縮小，使氧化鋅/氮化鎵可以形成有效的pn接面，研究中透過α-step表面輪廓儀、紫外光-可見光光譜儀(UV-Vis spectrum)、霍爾量測(Hall)、原子力顯微鏡(AFM)等儀器進行量測及分析不同表面形貌薄膜材料的特性。再以氧化銦錫/銀/氧化銦錫(37.5 nm/8 nm/37.5 nm)作為氧化鋅上的n型透明電極，鎳/氧化銦錫(20 nm/50 nm)作為p型電極，研究其不同表面形貌氧化鋅的光萃取效果。

In this study, a radio frequency magnetron co-sputtering system was used to deposit a zinc oxide film with a thickness of 300 nm, and a rapid heat treatment process in a nitrogen atmosphere was used to improve the electron concentration of zinc oxide to 7.15×1018cm-3, and then dilute hydrochloric acid (HCl) with different molar concentrations The solutions (concentrations of 20 mM, 35 mM, and 50 mM, respectively) were subjected to wet etching (etching depth 100 nm) to prepare roughened zinc oxide. In order for zinc oxide to have a better structured surface, PS nanospheres were applied to silicon substrates, gallium nitride substrates and zinc oxide films at a rotational speed of 1000 rpm and spin coating time of 3 minutes, and the surface morphology after spin coating was observed. Finally, after spin-coating nanospheres on the gallium nitride substrate, deposit a zinc oxide film with a thickness of 200 nm, and then use a rapid heat treatment process to improve the carrier concentration of zinc oxide and shrink the nanospheres, so that the zinc oxide/gallium nitride Effective pn junctions can be formed, which are measured and analyzed by α-step surface profiler, UV-Vis spectrum (UV-Vis spectrum), Hall measurement (Hall), atomic force microscope (AFM) and other instruments in the research Properties of thin film materials with different surface topography. Then use indium tin oxide/silver/indium tin oxide (37.5 nm/8 nm/37.5 nm) as the n-type transparent electrode on zinc oxide, and nickel/indium tin oxide (20 nm/50 nm) as the p-type electrode to study its Light extraction effect of ZnO with different surface topography.

摘要...........i
Abstract...........ii
誌謝...........iii
目錄...........iv
表目錄...........vi
圖目錄...........vii
第一章 緒論...........1
1.1 前言...........1
1.2 文獻回顧...........1
1.2.1 氧化鋅不同表面薄膜結構特性...........1
1.2.2 傳統氧化鋅/粗糙化氧化鋅/結構化氧化鋅異質結構發光二極體 ...........2
1.3 研究動機與目的...........3
第二章 理論基礎...........6
2.1 電漿理論...........6
2.2 射頻磁控濺鍍原理...........6
2.3 薄膜成核理論...........7
2.4材料特性簡介...........7
2.4.1氧化鋅薄膜...........7
2.4.2氮化鎵薄膜...........8
2.4.3氧化銦錫薄膜...........8
2.5 LED發光機制...........9
2.5.1直接發光與間接發光...........9
2.5.2載子注入...........9
2.6金屬與半導體接觸理論...........10
2.6.1 歐姆接觸理論...........11
2.7傳輸線模型...........11
第三章 實驗製程方法與步驟...........22
3.1 實驗流程說明...........22
3.2 共濺鍍薄膜製作流程...........22
3.2.1 共濺鍍系統...........22
3.2.2 電漿增強化學氣相沉積系統...........23
3.2.3 旋轉塗佈系統(Spin coating)...........23
3.3 傳輸線模型製程...........23
3.4 二極體製程...........24
3.5 實驗儀器量測原理...........25
3.5.1 接觸角量測儀...........25
3.5.2 表面輪廓分析儀...........25
3.5.3 霍爾效應量測系統...........25
3.5.4 原子力顯微鏡(Atomic force microscope；AFM)...........26
3.5.5 半導體參數分析儀...........26
3.5.6 光激發螢光量測系統...........26
3.5.7 電激發螢光量測系統...........27
第四章 結果與討論...........38
4.1 以濕式蝕刻製備具有不同表面形貌之氧化鋅薄膜特性分析...........38
4.1.1 不同濕式蝕刻濃度對於氧化鋅薄膜蝕刻表面形貌之影響...........38
4.1.2濕式蝕刻製程對於氧化鋅薄膜蝕刻光電特性之影響...........39
4.2具表面粗糙化氧化鋅薄膜與 P 型氮化鎵異質接面二極體元件製作與特性分析...........40
4.2.1不同表面形貌氧化鋅之歐姆接觸特性分析...........41
4.2.2不同表面形貌氧化鋅之發光二極體特性分析...........43
4.3氧化鋅薄膜沉積於單層陣列奈米球及其應用於提升二極體元件輻射效率之研究...........45
4.3.1單層奈米球應用於不同基板表面之影響...........45
4.3.2結構化氧化鋅之發光二極體特性分析...........47
第五章 結論與未來工作...........91
參考文獻...........93
Extended Abstract...........98
Abstract...........98

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