臺灣博碩士論文加值系統

本研究在室溫下、以反應式射頻磁控共濺鍍系統製備具有不同理論鈦原子含量之鈦摻雜氮化鋁光學硬化膜。研究中，首先探討，在不同氬氣及氮氣混合氣體比例分別條件下，單獨以鋁靶材製備之氮化鋁薄膜，並分析在不同熱退火條件下的光學、材料以及硬度特性，研究結果顯示，當製程環境中加入氮氣(2 sccm)參與反應性濺鍍時，氮化鋁薄膜成長取向為以AlN(100)之多晶結構為主，在可見光波段平均穿透率超過90%且光學能隙約為5.49 eV，當此薄膜在氮氣環境下、不同溫度退火後，薄膜的晶粒尺寸有逐漸縮小且結晶性也有劣化的趨勢，此外，由於奈米尺寸效應與鋁-氧鍵結的形成，使得光學能隙增加至約5.87 eV，而針對薄膜的硬度量測結果，則可以發現氮化鋁薄膜在氮氣環境、600oC溫度退火後，其平均硬度可以從9.85 GPa略為上升至10.05 GPa，進一步將退火溫度提升至800oC其硬度僅略微下降至10.01 GPa，顯示氮化鋁薄膜在不同溫度下有優異的機械硬度可靠，且在600oC溫度下、不同環境退火後之氮化鋁薄膜的平均硬度均過10 GPa。進一步利用鈦靶以及鋁靶為共濺鍍靶材，以射頻磁控反應性共濺鍍技術製備具有不同理論鈦原子含量之鈦摻雜氮化鋁薄膜，研究結果顯示，當鈦原子摻雜在氮化鋁薄膜中，將導致薄膜的光學能隙邊界有顯著紅移的現象，且隨著理論摻雜濃度上升至6%時(Ti/(Al + Ti) at.%)其光學能隙大幅下降至4.49 eV，而根據硬度的量測結果則顯示，將鈦原子摻雜在氮化鋁薄膜中，有助於提升薄膜的機械硬度，當薄膜中的鈦原子理論摻雜濃度為2 at.%時，薄膜的機械硬度可達11.86 GPa，且表面能有下降的趨勢，進一步增加薄膜中的理論鈦原子含量，由於薄膜中鈦原子的析出，硬度有逐漸下降的趨勢，此外，研究中亦顯示，鈦摻雜之氮化鋁薄膜的機械硬度，經過氮氣環境、600oC退火後有劣化的趨勢。最終，本研究將氮化鋁光學硬膜分別沉積在PC以及PMMA可撓式塑膠基板上，觀察並探討薄膜的附著度、機械撓曲特性以及與應力累積情形，研究結果顯示，將氮化鋁薄膜直接沉積在可撓式塑膠基板上，經百格測試後薄膜完全自塑膠基板脫落，而將氮化鋁薄膜沉積在具有特定厚度之有機矽基緩衝層表面時，由於此時結構具有較大的殘留壓應力，雖然薄膜有較明顯破裂的現象，然而附著度仍可以大幅提升至4B等級。

In this study, titanium-doped aluminum nitride was deposited using radio frequency magnetron reactive sputtering system at room temperature. The hardness of Aluminum Nitride (AlN) and Titanium Nitride (TiN) was compared by preparing Aluminum (Al) and Titanium (Ti) targets in different argon and nirogen flow ratios which was doped which enhance its hardness. The hardness of AlN and TiN is similar (9.85 and 9.86 GPa respectively) because the stoichiometry of TiN thin film is 0.53. In order to enhance hardness, we choose to dope Ti (2、4、6 %) on AlN thin film. In this study, it was found that 2% Ti-doped AlN thin films has the highest hardness with 11.86 GPa. The hardness of the thin film did not increase when the Titanium content was increased, since hardness decreased when Ti precipitated. In order to further understand the thermal stability of the film, the film is them annealed at 600, 800 ℃ for one hour. The result show that structural, hardness, and surface energy did not change much at 600 ℃ annealing, but did become oxidize at 800 ℃ annealing. At the same time, this study explored deposition of AlN on Polymethylmethacrylate (PMMA) and Polyethylene terephthalate (PET) to improve the surface hardness of flexible substrates. The adhesion was increased to 5 B by depositing 1500 nm Tetramethylsilane (TMS), while inhibiting crack when compressive stress increased.

摘要.................i
Abstract............ii
目錄................iii
表目錄................v
圖目錄...............vi
第1章 緒論............1
1.1 前言..............1
1.2 文獻回顧..........1
1.2.1 氮化鋁材料特性...1
1.3 研究動機..........1
第2章 理論基礎.........1
2.1 薄膜成核理論.......1
2.2 電漿理論...........2
2.3 射頻磁控濺射原理....2
2.4 薄膜應力的原理和機制.3
2.5 撓曲破壞原理與機制...4
第3章 實驗製成方法與步驟.9
3.1 實驗流程說明........9
3.2 薄膜製備流程........9
3.2.1 共濺鍍系統........9
3.2.2 基板清洗..........9
3.2.3 薄膜沉積..........9
3.2.4 薄膜撓曲測試.......9
3.2.5 表面輪廓分析儀(α-step)...........................................9
3.2.6 紫外/可見吸收光譜儀(UV-Vis Spectroscopy)..........................9
3.2.7 金相顯微鏡.......................................................9
3.2.8 附著度測試.......................................................9
3.2.9 場發射掃描式電子顯微鏡(Scanning Electron Microscope；SEM)..........9
3.2.10 X射線繞射儀(X-ray diffiactometer； XRD).........................9
3.2.11 微小維式硬度計...................................................9
3.2.12 傅立葉轉換紅外線吸收光光譜儀(Fourier transform Infrared；FTIR)....9
3.2.13 接觸角量測儀....................................................9
3.2.14 原子力顯微鏡(Atomic force microscope；AFM).......................9
第4章 結果與討論........................................................9
4.1 以反應性射頻磁控濺鍍系統製備氮化鋁薄膜之特性研究.......................9
4.1.1 在不同混合氣體比例下以反應性射頻磁控濺鍍系統製備氮化鋁薄膜............9
4.1.2 熱退火處理之氮化鋁薄膜之特性分析...................................10
4.1.3 氮化鋁薄膜表面與硬度特性分析 ......................................12
4.2 以反應性射頻磁控共濺鍍製備鈦摻雜氮化鋁之特性分析......................13
4.2.1 不同濃度鈦摻雜氮化鋁薄膜之特性分析.................................13
4.2.2 不同濃度鈦摻雜氮化鋁薄膜之硬度及表面特性分析........................15
4.3 以反應性射頻磁控濺鍍系統製備氮化鋁薄膜沉積於塑膠基板附著度.............15
4.3.1 氮化鋁薄膜附著度及撓曲............................................16
4.3.2 氮化鋁薄膜應力分析................................................17
第5章 結論.............................................................51
參考文獻 ...............................................................52
Extended Abstract ...............................................55

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