臺灣博碩士論文加值系統

本研究於室溫下利用電漿增強化學氣相沉積系統在聚甲基丙烯酸甲酯(壓克力)及聚乙烯對苯二甲酸酯(PET)基板上沉積有機矽基薄膜作為緩衝層，目的為增強壓克力基板與功能性薄膜之間的附著度，並減少薄膜沉積後的殘留應力，使薄膜附著度為5B等級，接著利用射頻磁控式共濺鍍系統，選擇氧化鋅作為濺鍍靶材，在緩衝層上沉積未摻雜氧化鋅薄膜，為了分析薄膜附著度改善原因，使用表面輪廓儀量測薄膜沉積前後曲率，再經由Stoney方程式計算出殘留應力，當殘留內應力越小則表示薄膜附著度越好，並透過光學顯微鏡觀察氧化鋅薄膜在不同緩衝層厚度下的百格測試附著度。研究結果顯示，當在氧化鋅與PMMA及PET基板之間加入厚度為300 nm的緩衝層後，與未加入緩衝層的樣品相比，氧化鋅薄膜的附著度分別由0B及2B等級提升至4B及5B等級，且殘餘應力由破裂的薄膜表面下降至-0.58 Gpa，表明緩衝層可以有效改善製程時所產生的熱應力。
因未摻雜氧化鋅薄膜不具備導電特性，為了製作二極體元件，利用射頻磁控式共濺鍍系統，選擇氧化鋅與氮化鋁作為共濺鍍靶材，在緩衝層上沉積電子濃度為1016~ 1017 cm−3之氮化鋁-氧化鋅共濺鍍薄膜後，與氧化銦錫/銀/氧化銦錫透明電極進行歐姆接觸，並使用半導體參數分析儀進行電性量測。研究結果顯示，沉積在Si基板上樣品的特徵電阻值約為2.49*10-1 Ω-cm2，而沉積在PET基板上樣品的特徵電阻值則約為15.5 Ω-cm，是因為薄膜與基板之間熱膨脹係數的差異，在PET基板上沉積薄膜所受到的熱應力比沉積在Si基板上所承受的更高，使得沉積在PET基板上薄膜的特徵電阻值較高。接著以銀金屬作為二極體元件的蕭特基接觸電極，並使用半導體參數分析儀進行電性量測。研究結果顯示，位於PET可撓式基板上二極體元件的電流-電壓圖呈現線性，可以觀察到有較大的漏電流，這是因為薄膜表面態位密度過高，為了抑制漏電流，於是利用氧電漿與雙氧水溶液進行表面改質，當樣品浸泡於雙氧水溶液的時間達到8分鐘時，二極體元件有表現出整流的特性，其蕭特基位障約為0.81 eV，而漏電流則約為-4.28*10-9，表明在經由雙氧水溶液表面改質後，確實可以有效抑制漏電流過大的問題。接著進一步探討利用不同功率的氧電漿對製作於可撓式基板上的二極體元件進行表面改質，並在之後應用於可撓式光檢測器上。

In this study, an organosilicon based film was deposited on poly(methyl methacrylate) (acrylic) and polyethylene terephthalate (PET) substrates as a buffer layer using a plasma enhanced chemical vapor deposition (PECVD) system at room temperature, with the purpose of enhancing the adhesion between the acrylic substrate and the functional film and reducing the residual stress after the film deposition, so that the film adhesion was of 5B grade. In order to analyze the reason for the improvement of film adhesion, a surface profiler was used to measure the curvature of the film before and after deposition, and then the residual stress was calculated by Stoney's equation. The smaller the residual stress was, the better the film adhesion was, and the zinc oxide film's hundred-frame test was observed through an optical microscope under different buffer layer thicknesses. Adhesion of zinc oxide films at different buffer layer thicknesses was observed through an optical microscope. The results showed that when a buffer layer of 300 nm was added between the zinc oxide and the PMMA and PET substrates, the adhesion of the zinc oxide films increased from 0B and 2B to 4B and 5B, respectively, and the residual stress decreased from the ruptured film surface to -0.58 Gpa, indicating that the buffer layer was effective in improving the thermal stress generated during the process. This shows that the buffer layer can effectively improve the heat stress generated during the process.
Since the undoped ZnO film does not have conductive properties, in order to fabricate the diode devices, a radio frequency magnetron co-sputtering system was used to select ZnO and AlN as the co-sputtering target, and the AlN-ZnO co-sputtering thin film with an electron concentration of 1016~1017 cm-3 was deposited on the buffer layer, then contacted with the alumina/tin/silver/metalumina transparent electrodes for ohmic contacts. The electrical properties were measured using a semiconductor parameter analyzer. The results show that the characteristic resistance of the samples deposited on Si substrate is about 2.49*10-1 Ω-cm2 , while the characteristic resistance of the samples deposited on PET substrate is about 15.5 Ω-cm2 . The reason is that, due to the difference in thermal expansion coefficients between the film and the substrate, the deposited film on the PET substrate suffers from a higher thermal stress than the deposited film on Si substrate, which results in the characteristic resistance of the film on the PET substrate. This results in a higher characteristic resistance of the film deposited on the PET substrate. Next, Schottky contact electrodes with silver metal as the diode element were used, and electrical properties were measured using a semiconductor parameter analyzer. The results showed that the current-voltage diagrams of the diodes on PET flexible substrates were linear, and large leakage currents could be observed, which was due to the high density of states on the surface of the film. In order to suppress the leakage currents, surface modification was carried out by using oxygen plasma and hydrogen peroxide solution, and the diodes showed rectification characteristics when the samples were immersed in hydrogen peroxide solution for 8 min. The fundamental barrier is about 0.81 eV, and the leakage current is about -4.28*10-9, which indicates that the excessive leakage current can be effectively suppressed after surface modification with hydrogen peroxide solution. The surface modification of diode elements on flexible substrates using oxygen plasma with different power levels was further investigated and subsequently applied to flexible photo-detectors.

摘要.................i
Abstract.................ii
誌謝.................iv
目錄.................v
表目錄.................viii
圖目錄.................x
第一章 緒論.................1
1-1 前言.................1
1-2 文獻回顧.................1
1-2-1機械撓曲測試.................1
1-2-2氮化鋁-氧化鋅共濺鍍薄膜.................2
1-2-3可撓式光檢測器.................3
1-3 研究動機與目的.................3
第二章 理論基礎.................5
2-1 電漿理論.................5
2-2 射頻磁控濺鍍原理.................5
2-3 化學氣相沉積之過程.................6
2-4 化學氣相沉積之種類.................6
2-5 薄膜成核理論.................7
2-6 薄膜材料特性簡介.................7
2-6-1 氧化鋅薄膜.................7
2-6-2 金屬薄膜.................8
2-6-3 氧化銦錫薄膜.................8
2-6-4 氮化鋁薄膜.................8
2-7 軟性基板簡介.................9
2-8 薄膜應力原理及機制.................9
2-9 撓曲破壞原理與機制.................10
2-10 金屬與半導體接觸理論.................11
2-10-1 歐姆接觸理論.................12
2-10-2 傳輸線模型[62-64].................12
2-10-3 蕭特基接觸理論.................13
第三章 實驗製程方法與步驟.................25
3-1實驗流程說明.................25
3-2實驗系統.................25
3-2-1 射頻磁控共濺鍍系統[67].................25
3-2-2 電漿增強化學氣相沉積系統.................26
3-3薄膜製作流程.................26
3-1-1 基板清洗................. 26
3-1-2氧化鋅薄膜製作流程................. 27
3-1-3氮化鋁-氧化鋅共濺鍍薄膜製作流程................. 27
3-4 傳輸線模型製程流程................. 28
3-5 二極體元件製作流程................. 28
3-5-1 蕭特基二極體元件之黃光製程................. 28
3-5-2 蕭特基二極體元件之黃光製程並經過表面處理................. 29
3-6 實驗儀器量測原理................. 30
3-6-1 表面輪廓分析儀................. 30
3-6-2 霍爾量測系統................. 30
3-6-3 紫外可見吸收光譜儀(UV-Vis Spectroscopy)................. 30
3-6-4 光激發螢光量測[ 64,68]................. 30
3-6-5 半導體參數分析儀................. 31
3-6-6 附著度測試................. 31
3-6-7 原子力顯微鏡(Atomic force microscope;AFM)................. 31
3-6-8 薄膜撓曲測試(自製撓曲機)................. 32
第四章 結果與討論................. 43
4-1 氧化鋅薄膜沉積在可撓式基板上附著度與機械撓曲特性分析................. 43
4-1-1氧化鋅薄膜沉積在可撓式基板表面之附著度與機械撓曲特性分析................. 43
4-1-2提昇氧化鋅薄膜沉積在可撓式塑膠基板表面機械附著度特性之研究................. 44
4-2 氮化鋁-氧化鋅共濺鍍薄膜沉積在可撓式基板上附著度與機械撓曲特性分析................. 48
4-2-1氮化鋁-氧化鋅共濺鍍薄膜沉積在可撓式基板表面之附著度與機械撓曲特性分析................. 48
4-2-2提昇氮化鋁-氧化鋅薄膜沉積在可撓式塑膠基板表面機械附著度特性之研究................. 50
4-3 可撓式氧化鋅基二極體元件製作與特性分析................. 53
4-3-1可撓式二極體元件的電流-電壓特性分析................. 53
4-3-2 利用氧電漿與雙氧水溶液對薄膜進行表面改質之表面型態分析，及其應用於二極體元件與銀電極進行接觸的電流-電壓特性分析................. 54
4-3-3利用不同時間的雙氧水溶液對薄膜進行表面改質之表面型態分析，及其應用於二極體元件與銀電極進行接觸的電流-電壓特性分析................. 56
第五章 結論與未來工作................. 104
5-1 結論................. 104
5-2 未來工作................. 106
參考文獻................. 107
Extended Abstract................. 112
Abstract................. 112

[1]Y. Zhang, J. He, Z. Y.e, L. Zou, J. Huang, L. Zhu, B. Zhao, 2004, “Structural and photoluminescence properties of Zn0.8Mg0.2O thin films grown on Si substrate by pulsed laser deposition ”, Thin Solid Films 458, pp. 161-164.
[2]S. Cho, J. Ma, Y. Kim, Y. Sun, G.K.L. Wong, and J.B. Ketterson,1999, “Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn”, Appl. Phys .Lett., 75, 18, pp. 2761.
[3]D. C. Look, 2001, “Recent advances in ZnO materials and devices”, Mater. Sci. Eng., A, 80, pp. 383-387.
[4]K. L. Chopra, S. Major, and D. K. Pandya, 1983, “Transparent conductors—A status review”, Thin Solid Films, 102, pp. 1-46.
[5]L. W. Ji, S. M. Peng, Y. K. Su, S. J. Young, C. Z. Wu, and W. B. Cheng, 2009, “Ultraviolet photodetectors based on selectively grown ZnO nanorod arrays”, Appl. Phys. Lett., 94, pp. 203106 .
[6]D. S. Liu, C. Y. Wu, C. S. Sheu, F. C. Tsai, and C. H. Li, 2006, “The Preparation of Piezoelectric ZnO Films by RF Magnetron Sputtering for Layered Surface Acoustic Wave Device Applications”, Jpn. J. Appl. Phys., 45, 4B, pp. 3531-3536.
[7]C.-Y. Liu, C.-F. Chen, and J.-P. Leu, 2009, “Fabrication and CO Sensing Properties of Mesostructured ZnO Gas Sensors”, J. Electrochem. Soc., 156 (1), pp. J16-J19.
[8]X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, 2007, “Planar ZnO ultraviolet modulator”, Appl. Phys. Lett., 91, pp. 071107.
[9]M. Saito, and S. Fujihara, 2008, “Large photocurrent generation in dye-sensitized ZnO solar cells”, Energy Environ. Sci., 1, pp. 280-283.
[10]A. Tsukazaki, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, 2005, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO”, Nat. Mater., 4, pp. 42-46.
[11]E. S. P. Leong, S. F. Yu, and S. P. Lau, 2006, “Directional edge-emitting UV random laser diodes”, Appl. Phys. Lett., 89, pp. 221109.
[12]S. J. Young, L.-W. Ji, S. J. Chang, Y. P. Chen, and S.-M. Peng, 2008, “ZnO Schottky diodes with iridium contact electrodes”, Semicond. Sci. Technol., 23, pp. 085016.
[13]Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. Asif Khan, D. Kuksenkov, and H. Temkin, 1997, “Schottky barrier detectors on GaN for visible–blind ultraviolet detection”, Appl. Phys. Lett., 70, pp. 2277.
[14]Z. C. Huang, J. C. Chen, and D. Wickenden, 1997, “Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors”, J. Cryst. Growth, 170, pp. 362.
[15]C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, and J. F. Chen, 2001, “GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts ”, IEEE Photonics Technol. Lett., 13, pp. 848.
[16]D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, 1999, “High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN”, Appl. Phys. Lett., 74, pp. 762.
[17]A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, and I. Adesida, 1997, “Metal contacts to n-type GaN”, J. Electron. Mater., 27, pp. 255.
[18]E. V. Kalinina, N. I. Kuznetsov, V. A. Dmiteiev, K. G. Irvine, and C. H. Carter, 1995, “Schottky barriers on n-GaN grown on SiC”, J. Electron. Mater., 25, pp. 831.
[19]T. U. Kampen and W. Mönch, 1997, “Barrier heights of GaN Schottky contacts”, Appl. Surf. Sci., 117, pp. 388.
[20]陳帝鴻, “電子書的下一波”, http://edm.itri.org.tw/enews/epaper/9901/a01.htm, (2010).
[21]XinAn Zhang, JunXia Zhai, XianKun Yu, LingHong Ding, WeiFeng Zhang, “Fabrication and characterization of flexible Ag/ZnO Schottky diodes on polyimide substrates”, Thin Solid Films Volume 548, 2 December 2013, Pages 623-626
[22] S. Utsunomiya, T. Kamakura, M. Kasuga, M. Kimura, W. Miyazawa, S. Inoue, and T. Shimoda, “Flexible color AM-OLED display fabricated using surface free technology by laser ablation/annealing(SUFTLAR) and ink-jet printing technology”, SID International Symposium Digest of Technical Papers 34(1), 864-867(2003).
[23]B. M. Henry, A. R. Roberts, C. R. M. Grovenor, A. P. Sutton, and G. A. D. Briggs, “Microstructural characterization of transparent SiO2 permeation barrier coatings on PET”, Soc. Vac. Coat. 41st Annu. Tech. Conf. Proc. 434(1998).
[24]M. Hong, J. H. Seo, W. J. Lee, S. G. Rho, W. Hong, T. Y. Choi, H. Jeon, S. Kim, B. S. Kim, Y. U. Lee, J. H. Oh, J. H. Cho, and K. H. Chung, “Large area full color transmissive a-Si TFT-LCD using low temperature processes on plastic substrate”, SID International Symposium Digest of Technical Papers 36(1), 14-17(2005).
[25]Jian-Zhi Chen, A Study of the Adhesion Improvement on a Thin Film Deposited on the PMMA Substrate Using Buffer-Layered Structure, July, 2016
[26]D.S. Liu,C.S. Sheu, “Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system.”, J. Appl. Phys. , 102,(2007).
[27]R.K.Shukla,A.Srivastava,A.Srivastava,and K.C.Dubey,“Growth of transparent conducting nanocrystalline Al doped ZnO thin films by pulsed laser deposition”,J.Cryst.Growth,294,p.427(2006).
[28]Z.Z.Ye,Q.Qian,G.D.Yuan,B.H.Zhao,D.W.Ma,“Effect of oxygen partial ratios on the properties of Al-N co-doped ZnO thin films”,J.Cryst. Growth,274,pp. 178-182(2005).
[29]K.P. Bhuvana, J. Elanchezhiyan, N. Gopalakrishnan, T. Balasubramanian, “Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: Acomparative study”, Applied Surface Science ,255,2026-2029(2008).
[30]Day-Shan Liu, Chia-Sheng Sheu, Ching-Ting Lee, “Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system”, JOURNAL OF APPLIED PHYSICS, 102, 033516(2007).
[31]Li-Wen Lai, Jheng-Tai Yan, Chia-Hsun Chen, Li-Ren Lou, Ching-Ting Lee, “Nitrogen function of aluminum codoped ZnOfilms deposited using coputter system”, J. Mater. Res., 24,No.7(2009).
[32]Min Wei, Hong Deng , Xueran Deng, Chunrong Yang, Jinju Chen, “Structure and optical properties of AlxZn1-xO alloys sol-gel technique”, Materials Research Bulletin, 46,755-759(2011).
[33]Jianfeng Sua, Chunhe Zang, Chunxiao Cheng, Qiang Niu, Yongsheng Zhang, Ke Yu, “Structural , optical and electrical properties of Al-N codoped ZnOfilms by RF-assisted MOCVD method”, Applied Surface Science, 257,160-164(2010).
[34]L.J. Li, H. Deng , L.P. Dai, J.J. Chen, Q.L. Yuan, Y. Li. , “Properties of Al heavy-doped ZnO thin films by RF magnetron sputter”, Materials Research Bulletin，43 ,1456-1462(2008).
[35]Bhupendra K. Sharma, Neeraj Khare , D. Haranath, “Photoluminescence lifetime of Al-doped ZnOfilms in visible region”, Solid State Communications , 150, 2341-2345(2010).
[36]M. Razeghi, A. Rogalski Semiconductor ultraviolet detectors J. Appl. Phys., 79 (1996), pp. 7433-7473
[37]E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, P. Gibart III nitrides and UV detection J. Phys.: Cond. Matt., 13 (2001), p. 7115
[38]C. Soci, A. Zhang, B. Xiang, S.A. Dayeh, D. Aplin, J. Park, X. Bao, Y.-H. Lo, D. Wang ZnO nanowire UV photodetectors with high internal gain Nano Lett., 7 (2007), pp. 1003-1009
[39]L. Dong, R. Yue, L. Liu Fabrication and characterization of integrated uncooled Infrared sensor arrays using a-Si thin-film transistors as active elements J. Micro Syst., 14 (2005), pp. 1167-1177
[40]S. Yang, P. Liu, M. Yang, Q. Wang, J. Song, L. Dong From flexible and stretchable meta-atom to metamaterial: a wearable microwave meta-skin with tunable frequency selective and cloaking effects Sci. Rep., 6 (2016), p. 21921
[41]Omar F. Farhat a, M. Husham b, M. Bououdina c, A.A. Abuelsamen d, Ammar A. Oglat e, Nyan J. Mohammed f, Tape-based novel ZnO nanoaggregates photodetector, Volume 332, Part 2, 1 December 2021, 113210
[42]H. Wang, J. Ma, L. Cong, H. Zhou, P. Li, L. Fei, B. Li, H. Xu, Y. Liu, Piezoelectric effect enhanced flexible UV photodetector based on Ga2O3/ZnO heterojunction, Volume 20, September 2021, 100464
[43]H. Xiao, 2003, Introduction to Semiconductor Manufacturing Technology, Prentice-Hall Inc.
[44]J. R. Roth, 1995, Industrial Plasma Engineering, Volume 1： Principles, Institute of Physics Publishing
[45]Michael Quirk、Julian Serda 著., 2005, 羅文雄、蔡榮輝、鄭岫盈譯,“半導體製造技術”, 滄海書局, chap. 11,8 月。
[46]Sematech., 1994, “Deposition Processes”, in Furnace Processes and Related Topics ”, Austin, TX : SEMATECH., p.6.
[47]吳東權等., 2005, “微機電系統之技術現況與發展”, 工業技術研究院機械工業研究所.
[48]D. S. Liu, F. C. Tsai, C. T. Lee, and C. W. Sheu, 2008,“Properties of Zinc Oxide Films Cosputtered with Aluminum at Room Temperature”, Jpn. J. Appl. Phys., 47, No. 4, pp. 3056-3062.
[49]D. S. Liu, C. C. Wu, and C. T. Lee, 2005,“A Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System at Room Temperature”, Jpn. J. Appl. Phys., 44, No. 7, pp. 5119-5121.
[50]T. Minami, 2005, “Transparent conducting oxide semiconductors for transparent electrodes”, Semicond. Sci. Technol., 20, pp. S35-S44.
[51]D.J. Leary, J. O. Barnes, and A. G. Jordan, 1982, “Calculation of carrier concentration in polycrystalline films as a function of surface acceptor state density： application for ZnO gas sensors”, J. Electrochem. Soc., 29, pp. 1382-1386.
[52]C. Caliendo, G. Saggio, P. Verardi and E. Verona, 1993, “Piezoelectric AlN Film for SAW Devices Application”, IEEE, Ultrasonics symposium, pp. 249-252.
[53]E. Janczak-Bienk, H. Jensen and G. Sorensen, Mater. Sci and Eng. A140, p. 696, (1991)
[54]S. M. Sze, and K. K. Ng, 2006, Physics of Semiconductor Devices, 3rd Edition, John Wiley & Sons, Inc.
[55]陳鼎堯，2008， “氧化鎂鋅鋁薄膜應用於氮化鋁鎵接觸之特性研究”，國立虎尾科技大學光電與材料科技研究所碩士論文。
[56]徐政維，氧化鎂鋅鋁箔膜應用於氮化鋁鎵接觸之特性研究，國立虎尾科技大學光電與材料科技研究所碩士論文，2008年。
[57]田宏隆, 2004, “可撓式平面顯示器用基板材料”, 工業材料雜誌., 234期, pp. 144-152
[58]R.W. Hoffman, C.H.S. Dupuy and A. Cachard., 1976, “Physics of nonmetallic Thin Films“, Plenum Press: New York, pp. 273.
[59]Y.C. Zhou, T. Tonomori, A. Yoshida, L. Liu, G. Bignall, T. Hashida., 2002, “Fracture characteristics of thermal barrier coatings after tensile and bending tests”, Surface and Coatings Technology., 157, pp. 118–127.
[60]吳俊慶，“以射頻共濺鍍系統於室溫下沉積透明導電膜研究”國立虎尾科技大學光電與材料科技研究所碩士論文 (2005).
[61]林俊興，“共濺鍍氧化銦鋅透明導電膜熱穩定性之研究”，國立虎尾科技大學光電與材料科技研究所碩士論文(2006).
[62]莊翔鈞，“不同氣體環境熱處理氧化鋅緩衝層對共濺鍍薄膜特性影響之研究”，國立虎尾科技大學光電與材料科技研究所碩士論文(2008).
[63]施敏、伍國玨，“半導體元件物理學 ” 第三版-上冊(2011).
[64]汪建民，“材料分析”，中國材料科學學會 (2005) .
[65]S. M. Sze, and K. K. Ng, 2006, Physics of Semiconductor Devices, 3rd Edition, John Wiley & Sons, Inc.
[66]徐政維，2008，“氧化鋅薄膜與金屬電極接觸特性之研究”, 國立虎尾科技大學光電與材料科技研究所碩士論文。
[67]施敏、伍國玨，“半導體元件物理學 ” 第三版-上冊(2011).
[68]Y. J. Zeng, Z. Z. Ye, J. G. Lu, L. P. Zhu, D. Y. Li, B. H. Zhao and J. Y. Huang, 2005, “Effects of Al content on properties of Al–N codoped ZnO films”, Appl. Surf. Sci. 249, pp. 203-207.
[69]In Soo Kim, Eun-Kyung Jeong, Do Yun Kim, Manoj Kumar, Se-Young Choi, “Investigation of p-type behavior in Ag-doped ZnO thin films by E-beam evaporation”, Applied Surface Science 255 (2009) 4011–4014.
[70]R. Vinodkumar,“Highly conductive and transparent laser ablated nanostructured Al：ZnO thin films.”,Appl.phys.Lett.,257,pp.708-716 (2010).
[71]徐爵民, 2015, ”高度整合晶片技術發展藍圖”,台灣產業科技前瞻研究計畫, 頁 50.
[72]傅仁達，2020， “具厚膜修飾圖案化水氣阻障層撓曲及照光可靠性之研究”，國立虎尾科技大學光電與材料科技研究所碩士論文。
[73]Wu, Cheng-yang; Liao, Ren-mao; Lai, Li-wen; Jeng, Ming-shium; Liu, Day-shan; “Organic/Inorganic Multilayered Barrier Structure Deposited onto the Flexible Plastic Substrate Using Plasma-enhanced Chemical Vapor Deposition”, Journal of the Vacuum Society of the R.O.C. 25:1 2012.03.
[74]Chan Kim a, Sungwook Hong b, “Band gap shift of Cu2ZnSnS4 thin film by residual stress”, Journal of Alloys and Compounds, Volume 799, 30 August 2019, Pages 247-255
[75]Anthony E. Ennos., 1966, “Stresses Developed in Optical Film Coatings”, Applied Optics., 5, pp. 51.
[76]許加昇，2007， “利用射頻磁控共濺鍍系統沉積鋁+氮共摻雜之氧化鋅薄膜” ，國立虎尾科技大學光電與材料科技研究所碩士論文。
[77]TWLMA Taiwan Light Metals Association, https://www.twlma.org.tw/Profile/Detail?id=12
[78]Dieter K. Schroder “Semiconductor Material and Device Characterization”,John Wiley & Sons Inc.
[79]Y. Chen, L. Wang, C. Mo, Y. Pu, W. Fang, F. Jiang, 2005, “Study of structural and luminescent properties of high-quality ZnO thin films treatment with hydrogen peroxide solution” Materials Science in Semiconductor Processing, 8, pp. 569–575.
[80]Y. J. Lin, S. S. Chang, H. C. Chang and Y. C. Liu, 2009, “High-barrier rectifying contacts on undoped ZnO films with (NH4)2SX treatment owing to Fermi-level pinning” J. Phys. D: Appl. Phys., 42, pp. 075308.
[81]Y. G. Wang, S. P. Lau, H. W. Lee, S. F. Yu, B. K. Tay, X. H. Zhang, and H. H. Hng, 2003, “Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air”, J. Appl. Phys., 94, pp. 354 .
[82]C. H. Tsaia, C. I. Hungb, C. F. Yangc, M. P. Hounga, 2010, “Hydrogen peroxide treatment on ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts”, Appl. Surf. Sci., 257, pp. 610-615.
[83]M. L. Cui, X. M. Wu, L. J. Zhuge and Y.D. Meng, 2007, “Effects of annealing temperature on the structure and photoluminescence properties of ZnO films”, Vacuum, 81, pp.899–903.
[84]姚筱茹，2007，“不同表面處理對於氧化鋅蕭特基二極體 電特性影響之研究” ，國立虎尾科技大學光電與材料科技研究所碩士論文。
[85]Yufeng Chen, Li Wang, Chunlan Mo, Yong Pu, Wenqing Fang, Fengyi Jiang,Available online 15 November 2005., “Study of structural and luminescent properties of high-quality ZnO thin films treatment with hydrogen peroxide solution”, Materials Science in Semiconductor Processing , Volume 8, Issue 5, October 2005, Pages 569-575.