臺灣博碩士論文加值系統

全球暖化和能源危機是目前世界面臨的挑戰，尋求再生能源取代石化燃料是改善環境問題的必然趨勢，而太陽能是取之不盡、用之不竭的再生能源。光熱轉換是太陽能的主要應用之一，太陽能選擇性吸收體可有效的收集太陽能來獲得較高的光熱轉換效率，是太陽能集熱系統中關鍵的組件。
本研究使用反應磁控濺鍍系統，以改變Mo、Si的濺鍍功率，濺鍍不同Mo/Si比之MoSi0.3、MoSi0.8、MoSi2.1及MoSi2.8，結構分析顯示，MoSi0.3主要為Cubic-Mo3Si相，MoSi0.8主要為Tetragonal-Mo5Si3相，MoSi2.1為Hexagonal-MoSi2、Tetragonal-Mo5Si3混合相，MoSi2.8主要為Hexagonal-MoSi2相。四種MoSix穿透率均趨近於0，隨著Si含量增加反射率逐漸下降、光學能隙逐漸增加。在大氣300 ℃、400 ℃及500 ℃下進行熱穩定測試。MoSi2.8的光學及抗氧化性最佳，作為吸收層使用。
MoSi基太陽能選擇性吸收體以Al、Cu基板作為IR反射層、MoSi2.8作為吸收層、MoO3作為第一抗反射層、SiO2作為第二抗反射層。Cu/MoSix/MoO3/SiO2之最佳吸收率(α)、熱輻射率(ε)分別為89.8 %、4.2 %，Al/MoSix/MoO3/SiO2之最佳α、ε為90.6 %、4.0 %。根據改變第二抗反射層SiO2厚度以改變吸收體之顏色，厚度66 nm顏色為藍色、厚度106 nm顏色為黃色、厚度166 nm顏色為紫色。將吸收體置於真空400 ℃中持溫2hr，Cu/MoSix/MoO3/SiO2之α下降至79.2 %、ε上升至5.8 %，Al/MoSix/MoO3/SiO2之α及ε分別為80.2 %及8.8 %。XRD分析證實MoO3在真空200 ℃中已轉變為MoO2，導致α、ε改變。

Global warming and the energy crisis are current challenges that the world face to renewable energy sources were seeking to replace fossil fuels is an inevitable trend for improving environmental issues. As we know, solar energy is an inexhaustible renewable energy source, so photothermal conversion is one of the main applications of solar energy. Solar selective absorbers can more effectively collect solar energy to achieve higher photothermal conversion efficiency, making them to be a critical component in solar thermal systems.
This study uses a reactive magnetron sputtering system to vary the sputtering power of Mo and Si, resulting in different Mo/Si ratios of MoSi0.3, which are MoSi0.8, MoSi2.1 and MoSi2.8, respectively. Structural analysis showed that MoSi0.3 mainly a Cubic-Mo3Si phase, MoSi0.8 is primarily a Tetragonal-Mo5Si3 phase, MoSi2.1 is a mixed phase of Hexagonal-MoSi2 and Tetragonal-Mo5Si3, MoSi2.8 is mainly a Hexagonal-MoSi2 phase. The transmittance of all four MoSix films approaches zero, and as the Si content increases, the reflectance gradually decreases while the optical band gap gradually increases. Thermal stability tests were conducted in the atmosphere at 300 °C, 400 °C and 500 °C. MoSi2.8 exhibited the best optical and oxidation resistance properties, making it suitable for use as an absorbing layer.
The MoSi-based solar selective absorbers used Al and Cu substrates as the IR reflective layer, MoSi2.8 as the absorbing layer, MoO3 as the first antireflective layer, and SiO2 as the second antireflective layer. The optimal absorption rate (α) and thermal radiation rate (ε) of Cu/MoSix/MoO3/SiO2 are 89.8 % and 4.2 % respectively, while those of Al/MoSix/MoO3/SiO2 are 90.6 % and 4.0 %, respectively. By varying the thickness of the second antireflective layer, SiO2, the color of the absorber can be changed. A thickness of 66 nm results in a blue color, 106 nm in a yellow color, and 166 nm in a purple color. When the absorber is subjected to a vacuum heating at 400 °C for 2 hours, the α of Cu/MoSix/MoO3/SiO2 decreases to 79.2 % and ε increases to 5.8 %, while the α and ε of Al/MoSix/MoO3/SiO2 are 80.2 % and 8.8 %, respectively. XRD analysis confirms that MoO3 transforms into MoO2 at 200 °C in a vacuum, leading to changes in α and ε.

摘要.....i
ABSTRACT.....iii
誌謝.....v
目錄.....vi
表目錄.....xi
圖目錄.....xiii
第一章、緒論.....1
1.1 前言.....1
1.2 研究動機.....2
第二章、文獻探討.....4
2.1 太陽能選擇性吸收體.....4
2.2 太陽能選擇性吸收體之介紹.....6
2.2.1 金屬基材（IR反射層）.....7
2.2.2 光譜選擇性吸收膜.....7
2.2.2.1 本質型吸收膜.....8
2.2.2.2 半導體吸收膜.....9
2.2.2.3 金屬陶瓷複合吸收膜.....10
2.2.2.4表面結構型吸收膜.....10
2.2.2.5 電介質-金屬-電介質(DMD)吸收膜.....11
2.2.3抗反射層(AR).....11
2.3 太陽能選擇性吸收體之光學性質.....12
2.4 鍍層材料之介紹.....13
2.4.1 過渡金屬.....13
2.4.2 過渡金屬矽化鉬.....14
2.4.3 過渡金屬氧化鉬.....16
2.4.4 二氧化矽.....18
2.5物理氣相沉積 ( PVD ).....18
2.5.1濺鍍 (Sputtering).....19
2.5.2直流濺鍍（Direct Current Sputtering , DC）.....21
2.5.3射頻濺鍍（Radio-Frequency Sputtering, RF）.....21
2.5.4磁控濺鍍系統 (Magnetron Sputtering System, MS).....21
2.6 光學能隙.....22
第三章、實驗材料、流程與儀器介紹.....23
3.1 實驗材料.....23
3.1.1 實驗基板.....23
3.1.2 濺鍍靶材.....23
3.1.3 製程氣體.....23
3.1.4 化學藥品.....23
3.2 實驗流程.....24
3.2.1 試片前處理.....25
3.2.2 MoSix、MoO3、SiO2薄膜製備.....26
3.2.3太陽能選擇性吸收體的製備.....28
3.2.4 太陽能選擇性吸收體真空熱穩定測試.....28
3.3 實驗儀器介紹、原理.....29
3.3.1 反應式磁控濺鍍系統.....29
3.3.2 熱處理系統.....29
3.3.3 X光繞射分析儀.....30
3.3.4 紫外光/可見光/近紅外光光譜儀.....32
3.3.5 傅立葉轉換紅外光譜.....33
3.3.6掃描式電子顯微鏡.....33
3.3.7 場發射掃描式電子顯微鏡.....35
3.3.8能量散射光譜儀.....36
3.3.9 霍爾量測.....37
3.3.10 四點探針.....37
3.3.11雷射拉曼散射光譜儀.....38
3.3.12薄膜厚度輪廓測量儀.....39
3.3.13橢圓偏光儀.....40
3.3.14薄膜光學軟體.....41
第四章、結果與討論.....42
4.1 MOSIX單層膜之製備與分析.....42
4.1.1 MoSix之成分分析.....42
4.1.2 MoSix之XRD結構分析.....43
4.1.3 MoSix之光電性質.....48
4.1.4 MoSix大氣熱穩定性之性能探討.....52
4.2 MOO3單層膜之製備與分析.....59
4.2.1 MoO3之成分分析、結構分析.....59
4.2.2 MoO3之光學性質.....62
4.2.3 MoO3真空熱穩定性之性能探討.....64
4.3 SIO2單層膜之製備與分析.....66
4.3.1 SiO2之成分分析、結構分析、光學性質.....66
4.3.2 SiO2之光學性質.....67
4.4 太陽能選擇性吸收體之光學性質.....68
4.4.1單層膜之光學常數.....68
4.4.2 MoSi2.8/MoO3/SiO2吸收體.....69
4.5 太陽能選擇性吸收體之真空熱穩定測試.....82
第五章、結論.....89
參考文獻.....90
EXTENDED ABSTRACT.....105

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