臺灣博碩士論文加值系統

本論文探討摻雜奈米銀之氧化銦錫堆疊層應用於網印式單晶矽太陽能電池光電特性之影響，由於氧化銦錫(ITO)的高穿透率、低電阻率特性及奈米銀的高散射效率，因此適合做為串接太陽能電池連接層，本實驗探討沉積摻雜奈米銀之氧化銦錫堆疊層於網印式單晶矽太陽能電池正面，並透過改變銀直流濺鍍功率、摻雜方式、堆疊層工作壓力、ITO:Ag工作壓力、ITO工作壓力及太陽能電池背面結構來改善連接層與底部網印式單晶矽太陽能電池的接觸特性及光電轉換效率，並使用霍爾效應分析儀、紫外光/可見光/近紅外光光譜儀、熱電子型場發射掃描式電子顯微鏡及紫外光光電子光譜儀探討摻雜奈米銀之氧化銦錫堆疊層的電阻率、載子移動率、穿透率、能隙、厚度、奈米銀直徑及功函數等材料特性。
實驗結果顯示，當銀直流濺鍍功率越高時，堆疊層穿透率越低，以銀直流濺鍍功率為4W時的光電轉換效率衰減最小，跟ITO/Ag堆疊結構比較，以共濺的ITO:Ag的結構，其穿透率最佳，因此後續實驗將固定在4 W的銀直流濺鍍功率情況下，利用共濺鍍的方式摻雜奈米銀至ITO。當ITO工作壓力上升時，堆疊層厚度越薄且其ITO:Ag/ITO能隙越小，當ITO:Ag工作壓力8 mtorr搭配ITO工作壓力10 mtorr時，光電轉換效率衰減最小，接續實驗為探討不同太陽能電池背面結構之影響，背氧化鉬搭配銀電極的光電轉換效率衰減比鋁背表面電場更小。綜合以上實驗可得知，當銀直流濺鍍功率為4 W時，搭配ITO射頻濺鍍功率為55 W且結構為ITO:Ag/ITO堆疊層情況下，ITO 的工作壓力為10 mtorr及ITO:Ag的工作壓力為8 mtorr、背面結構為氧化鉬搭配銀電極時，其元件光電轉換效率衰減最小，從20.56 %衰減至20.20 %，光電轉換效率衰減百分比為-1.78 %。其堆疊層的平均穿透率為84.74 %、能隙為3.5 eV、厚度為46 nm、電阻率為3.97 ×10-4 Ω-cm及移動率為44.9 cm2/vꞏs。

The effects of silver nanoparticles (Ag NPs) doped indium tin oxide (ITO) stacked layers (SLs) on the photovoltaics of screen-printed monocrystalline silicon solar cells (SPMSSCs) were discussed. Due to the high transmittance and low resistivity of ITO and high scattering efficiency of Ag NPs, ITO:Ag is suitable as an interconnected layers (ICLs) for tandem solar cells. Therefore, in this thesis, a SLs of Ag NPs doped ITO was deposited on the front of the SPMSSCs. The contact characteristics and conversion efficiency (CE) of the ICLs and the bottom SPMSSCs were investigated by changing the silver DC sputtering power, doping method, SLs working pressure, ITO:Ag and ITO working pressure and back structures. Hall effects analyzer, UV/VIS/IR spectrometer, field emission scanning electron microscope, and ultraviolet photoelectron spectrometer were used to investigate the SLs properties such as resistivity, carrier mobility, transmittance, energy gap, thickness, diameter, and work function.
The results show that the transmittance of the SLs is decreases with increasing silver DC power. The CE degradation is the smallest for silver DC sputtering power at 4 W. Compared with the ITO/Ag SLs, the co-sputtered ITO:Ag layers has the best transmittance. Therefore, the follow-up experiments will be fixed at the silver DC sputtering power of 4 W, and the co-sputtering method will be used to dope Ag NPs into ITO. When the working pressure of ITO increases, the thickness of the SLs is reduced and its ITO:Ag/ITO energy gap is decreased. Combined the working pressure of ITO:Ag at 8 mtorr and the working pressure of ITO at 10 mtorr, the degradation of CE is the smallest. The attenuation of CE of MoO2 with silver electrode is smaller than that of aluminum back surface field. The CE degradation from 20.56 % to 20.20 % and the CE decay percentage of -1.78 % were achieved by the DC sputtering power of silver at 4 W, the working pressure of ITO at 10 mtorr and the working pressure of ITO:Ag at 8 mtorr, and the back structure of the MoO2/Ag. The SL with the average transmittance of 84.74 %, the energy gap of 3.5 eV, the thickness of 46 nm, the resistivity of 3.97 × 10-4 Ω-cm, and the mobility of 44.9 cm2/vꞏs were demonstrated.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vii
圖目錄...viii
第一章 緒論...1
1.1 奈米銀應用於矽基太陽能電池之文獻回顧...1
1.2 濺鍍氧化銦錫之文獻回顧...2
1.3 氧化鉬電洞選擇性接觸層應用於太陽能電池之文獻回顧...4
1.4 研究動機...5
1.5 論文架構...6
第二章 實驗流程與特性測量...7
2.1 實驗前段製程...7
2.1.1 透過標準濕式清洗矽基板將表面的微塵粒子以及自然氧化層...7
2.1.2藉由氫氧化鉀混合液對矽基板進行糙化...8
2.1.3使用高溫爐管對矽基板進行磷擴散形成p/n+接面...8
2.1.4使用快速熱退火進行退火，藉著加熱來細化晶粒，釋放應力...8
2.1.5利用酸性混合液清洗矽基板去除擴散時產生的磷玻璃以及邊緣隔絕...8
2.1.6沉積氮化矽在n+射極上作為抗反射層...9
2.1.7藉由網印機將銀膠網印至氮化矽上並烤乾...9
2.2 改變銀濺鍍功率及工作壓力之ITO:Ag/ITO堆疊層對網印式單晶矽太陽能電池光電特性之影響...9
2.2.1藉由網印機將鋁膠及銀膠網印到矽基板的背表面並將其烤乾...9
2.2.2透過燒結爐進行燒結使銀膠刺穿氮化矽與射極接觸...10
2.2.3使用雷射切割機將矽基板裁切成20×20 mm2...10
2.2.4太陽能電池電流-電壓特性量測...10
2.2.5正面濺鍍ITO:Ag/ITO堆疊層...10
2.2.6 太陽能電池電流-電壓特性量測...11
2.2.7 改變Ag濺鍍功率及工作壓力之ITO:Ag/ITO堆疊層對網印式單晶矽太陽能電池光電特性之影響...11
2.3 改變銀摻雜結構之ITO:Ag/ITO堆疊層對網印式單晶矽太陽能電池光電特性之影響...11
2.3.1藉由網印機將鋁膠及銀膠網印到矽基板的背表面並將其烤乾...11
2.3.2透過燒結爐進行燒結使銀膠刺穿氮化矽與射極接觸...12
2.3.3使用雷射切割機將矽基板裁切成20×20 mm2...12
2.3.4太陽能電池電流-電壓特性量測...12
2.3.5正面濺鍍ITO:Ag/ITO堆疊層...12
2.3.6 太陽能電池電流-電壓特性量測...13
2.3.7 改變銀摻雜結構之ITO:Ag/ITO堆疊層對網印式單晶矽太陽能電池光電特性之影響...13
2.4 ITO:Ag/ITO薄膜特性分析...13
2.4.1霍爾效應分析儀...13
2.4.2 紫外光∕可見光∕近紅外光分光光譜儀...14
2.4.3 紫外光光電子光譜儀...14
2.4.4 場發射掃描式電子顯微鏡...14
2.5 比較ITO:Ag/ITO堆疊層對鋁背表面電場及背氧化鉬銀之網印式單晶矽太陽能電池之光電特性影響...14
2.5.1藉由網印機將鋁膠及銀膠網印到矽基板的背表面並將其烤乾...15
2.5.2透過燒結爐進行燒結使銀膠刺穿氮化矽與射極接觸...15
2.5.3使用雷射切割機將矽基板裁切成20×20 mm2...15
2.5.4太陽能電池電流-電壓特性量測鋁背表面電場之單晶矽太陽能電池...15
2.5.5使用旋轉塗佈機旋塗兩層抗蝕刻膠並烤乾保護正面氮化矽及電極...16
2.5.6浸泡氫氟酸蝕刻背表面的自然氧化層...16
2.5.7背面熱蒸鍍氧化鉬...16
2.5.8背面熱蒸鍍銀金屬...16
2.5.9太陽能電池電流-電壓特性量測...16
2.5.10正面濺鍍ITO:Ag/ITO堆疊層...17
2.5.11 太陽能電池電流-電壓特性量測...17
2.5.12 比較ITO:Ag/ITO堆疊層對鋁背表面電場及背氧化鉬銀之網印式單晶矽太陽能電池之光電特性影響...17
第三章 摻雜奈米銀之氧化銦錫堆疊層應用於網印式單晶矽太陽能電池光電特性之影響...32
3.1 改變銀直流濺鍍功率之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響及材料分析...32
3.1.1 改變銀直流濺鍍功率之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響...32
3.1.2改變銀濺鍍功率之ITO:Ag/ITO堆疊層材料分析...33
3.1.3結論...33
3.2 改變ITO:Ag/ITO堆疊層摻雜結構對鋁背表面電場太陽能電池光電特性之影響及材料分析...33
3.2.1 改變ITO:Ag/ITO堆疊層摻雜結構對鋁背表面電場太陽能電池光電特性之影響...33
3.2.2改變ITO:Ag/ITO堆疊層摻雜結構材料分析...34
3.2.3 結論...34
3.3 改變濺鍍壓力之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響及材料分析...35
3.3.1 改變濺鍍壓力之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響...35
3.3.2改變濺鍍壓力之ITO:Ag/ITO堆疊層材料分析...35
3.3.3 結論...36
3.4 固定ITO改變ITO:Ag濺鍍壓力之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響及材料分析...36
3.4.1 固定ITO改變ITO:Ag濺鍍壓力之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響...36
3.4.2固定ITO改變ITO:Ag濺鍍壓力之ITO:Ag/ITO堆疊層材料分析...37
3.4.3 結論...37
3.5 固定ITO:Ag改變ITO濺鍍壓力之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響及材料分析...37
3.5.1 固定ITO:Ag改變ITO濺鍍壓力之ITO:Ag/ITO堆疊層對鋁背表面電場太陽能電池光電特性之影響...37
3.5.2固定ITO:Ag改變ITO濺鍍壓力之ITO:Ag/ITO堆疊層材料分析...38
3.5.3 結論...38
3.6 ITO:Ag/ITO堆疊層對鋁背表面電場及背氧化鉬銀之網印式單晶矽太陽能電池之光電特性之影響...38
3.6.1 ITO:Ag/ITO堆疊層對鋁背表面電場及背氧化鉬銀之網印式單晶矽太陽能電池之光電特性之影響...39
3.6.2結論...39
第四章 總結論與未來展望...67
4.1總結論...67
4.2未來展望...67
參考文獻...68
Extended Abstract...72
Abstract...72
Introduction...73
Experimental...73
Results and Discussion...74
Conclusions...74
References...75

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