本論文使用黃光微影製程製作線寬為10μm之金屬指叉狀電極並以射頻磁控濺鍍系統沉積氧化鋅薄膜於41°Y-X鈮酸鋰基板上並進行熱退火處理應用於表面聲波紫外光感測器。為了增強元件對紫外光的靈敏度，本文於氧化鋅薄膜上以低溫水熱法成長氧化鋅奈米柱，並比較薄膜及奈米結構對於紫外光感測器特性的影響，本文奈米柱主要變數為生長時間，元件製作完成後分別利用向量式網路分析儀(VNA)測量元件之插入損耗、中心頻率、相位等，並分析出元件之紫外光響應；利用場發射掃描電子顯微鏡(FE-SEM)及X光繞射分析儀(XRD)觀察薄膜和奈米結構之表面型態、晶體結構，並探討薄膜結構及奈米結構分別以紫外光波段254nm和365nm照射下，元件對紫外光的靈敏度之影響。

This paper utilizes photolithography process to fabricate interdigital transducer(IDT) with a linewidth of 10μm. It deposits zinc oxide (ZnO) thin film on a 41°Y-X LiNbO3 substrate using a radio frequency magnetron sputtering system, followed by a thermal annealing process. The fabricated structure is applied as a surface acoustic wave ultraviolet (UV) photodetector. To enhance the device sensitivity to UV light, ZnO nanorods are grown on the ZnO thin film using a low-temperature hydrothermal method. The paper compares the effects of the thin film and nanorod structures on the characteristics of the UV photodetector. The main variable of the nanorods is the growth time. After completing the device fabrication, the insertion loss, center frequency, phase, and UV light response of the devices are measured using a vector network analyzer (VNA). The surface morphology and crystal structure of the thin film and nanorod structures are observed using field emission scanning electron microscopy (FE-SEM) and X-ray diffraction analysis (XRD).The paper primarily investigates the influence of the thin film structure and nanorod structure on the sensitivity of the devices to UV light at wavelengths of 254nm and 365nm.

摘要.......i
Abstract.......ii
誌謝.......iii
目錄.......iv
表目錄.......vii
圖目錄.......viii
第一章 緒論.......1
1.1 前言.......1
1.2 研究動機.......1
第二章 基礎理論.......2
2.1 壓電理論.......2
2.1.1 壓電效應.......2
2.1.2 正壓電效應.......2
2.1.3 逆壓電效應.......3
2.2 壓電材料.......4
2.2.1 壓電材料種類.......4
2.2.2 壓電基板特性.......4
2.3 表面聲波.......6
2.3.1 雷利波(Rayleigh Waves).......7
2.3.2 水平剪切聲波(Shear Horizontal Acoustic Waves).......7
2.3.3 表面飄移塊體波(Surface Skimming Bulk Waves).......7
2.3.4 拉福表面聲波(Love Surface Acoustic Wave).......7
2.4 表面聲波元件概論與設計.......8
2.4.1 表面聲波元件.......8
2.4.2 指叉狀電極設計.......9
2.4.3 插入損耗(Insertion Loss).......10
2.4.4 波速及中心頻率.......10
2.4.5 機電耦合係數(Electronmechanical Coupling Coefficient, k2).......11
2.4.6 溫度頻率係數(Temperature Coefficients of Frequency).......12
2.5 氧化鋅結構及特性.......13
2.6 薄膜沉積.......14
2.6.1 沉積方式.......14
2.6.2 磁控濺鍍原理.......14
2.6.3 電漿原理.......16
2.6.4 薄膜成長機制.......17
2.7 熱退火處理.......19
2.8 氧化鋅奈米結構製備方法.......21
2.8.1 水熱法.......21
2.9 紫外光感測.......22
2.9.1 聲電效應(Acoustoelectric effect).......23
2.9.2 質量負載效應(Mass-loading effect).......25
2.9.3 光吸收.......26
2.9.4 紫外光元件感測.......27
第三章 實驗步驟與分析.......28
3.1 實驗流程架構.......28
3.2 表面波元件製作.......29
3.2.1 黃光微影製程.......29
3.2.2 氧化鋅粉靶製作.......32
3.2.3 氧化鋅薄膜濺鍍.......33
3.2.4 氧化鋅奈米柱生長.......34
3.3 分析與量測儀器介紹.......36
3.3.1 場發射掃描電子顯微鏡 (Field Emission Scanning Electron Microscopy, FE-SEM).......36
3.3.2 X光繞射儀(X-ray Diffraction, XRD).......36
3.3.3 網路分析儀(Network Analyzer).......38
3.3.4 電源電錶（Source Meter Unit, SMU）.......39
3.4 表面聲波元件紫外光感測.......40
3.5 實驗藥品、耗材及儀器介紹.......41
3.5.1 實驗藥品及耗材.......41
3.5.2 實驗儀器.......42
第四章 結果與討論.......43
4.1 氧化鋅物理特性分析.......43
4.1.1 氧化鋅薄膜及奈米結構XRD分析.......43
4.1.2 不同膜厚之氧化鋅薄膜形貌分析.......45
4.1.3 不同成長時間之氧化鋅奈米柱形貌分析.......50
4.2 表面聲波元件頻率響應分析.......55
4.2.1 不同氧化鋅薄膜厚度沉積於41°Y-X鈮酸鋰基板之頻率響應.......55
4.2.2 不同成長時間之氧化鋅奈米柱/氧化鋅薄膜0.94μm/41°Y-X鈮酸鋰基板之頻率響應.......60
4.3 溫度頻率係數(TCF)之量測分析.......65
4.4 表面聲波元件之紫外光感測器特性分析.......66
4.4.1 不同紫外光波段對氧化鋅薄膜之插入損耗影響.......67
4.4.2 不同紫外光波段對氧化鋅奈米柱之插入損耗影響.......68
4.4.3 不同紫外光波段對氧化鋅薄膜之頻率影響.......69
4.4.4 不同紫外光波段對氧化鋅奈米柱之頻率影響.......70
4.4.5 不同紫外光波段對氧化鋅薄膜之相位影響.......71
4.4.6 不同紫外光波段對氧化鋅奈米柱之相位影響.......72
4.4.7 氧化鋅薄膜與氧化鋅奈米柱之靈敏度比較.......73
4.4.8 奈米柱元件於不同光功率密度照射下之頻率偏移變化量比較.......74
4.5 I-V特性.......76
4.5.1 氧化鋅薄膜照射不同紫外光波段之I-V特性曲線.......77
4.5.2 氧化鋅奈米柱照射不同紫外光波段之I-V特性曲線.......78
4.5.3 氧化鋅薄膜照射不同紫外光波段之I-T特性曲線.......79
4.5.4 氧化鋅奈米柱照射不同紫外光波段之I-T特性曲線.......80
第五章 結論.......81
參考文獻.......83
Extended Abstract.......91

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