臺灣博碩士論文加值系統

本研究製作之上發光有機發光二極體元件結構為金屬(底部陽極)-有機-金屬(頂部陰極)的架構製作在矽基板上，陽極的部分以鋁(Al)當底部陽極，相較於銀(Ag)可獲得良好的電壓-電流密度，HATCN當電洞注入層(HIL)，TAPC當電洞傳輸層，Alq3做發光層(EML)，電子傳輸層(ETL)用TPBi，電子注入層(EIL)用LiF，陰極為鋁(Al)。
由於上發光的發光面及下發光的發光面不同，所以陰極選用薄薄的鋁，形成一種透明陰極，可提供良好的穿透率及電子注入效率。
本實驗完整元件結構及厚度為:
Al (100 nm)/HATCN (10 nm)/NPB (30 nm)/Alq3 (60 nm)/TPBi (50 nm)/LiF (3 nm)/Al (20.3 nm)，當電壓8V時元件之電流密度為64.3 mA/cm2，亮度為258.7 cd/m2，電流效率為0.4 cd/A。

In this study, the structure of the light-emitting organic light-emitting diode device fabricated is a metal (bottom anode)-organic-metal (top cathode) structure fabricated on a silicon substrate, and the anode part uses aluminum (Al) as the bottom anode, compared with Silver (Ag) can obtain good voltage-current density, HATCN as hole injection layer (HIL), TAPC as hole transport layer, Alq3 as light emitting layer (EML), electron transport layer (ETL) with TPBi, electron injection layer (EIL) uses LiF, and the cathode is aluminum (Al).
Since the upper light-emitting surface and the lower light-emitting surface are different, the cathode is made of thin aluminum to form a transparent cathode, which can provide good transmittance and electron injection efficiency.
The complete component structure and thickness of this experiment are:
Al (100 nm)/HATCN (10 nm)/NPB (30 nm)/Alq3 (60 nm)/TPBi (50 nm)/LiF (3 nm)/Al (20.3 nm), the current density of the device when the voltage is 8V It is 64.3 mA/cm2, the brightness is 258.7 cd/m2, and the current efficiency is 0.4 cd/A.

摘要……………………………………………………………………………………………i
Abstract………………………………………………………………………………………ii
誌謝…………………………………………………………………………………………iii
目錄…………………………………………………………………………………………… iv
表目錄………………………………………………………………………………………… vi
圖目錄………………………………………………………………………………………vii
第一章、緒論…………………………………………………………………………………1
1.1 上發光型有機發光二極體簡介………………………………………………………1
1.2研究動機………………………………………………………………………………3
第二章、有機發光二極體結構………………………………………………………………4
2.1 有機發光二極體原理…………………………………………………………………4
2.1.1 有機發光二極體發光機制………………………………………………………4
2.1.2電流注入理論………………………………………………………………………5
2.1.3有機發光二極體各層結構介紹……………………………………………………6
2.1.4上發光、下發光、穿透式OLED結構…………………………………………7
2.1.5微共振腔效應………………………………………………………………………9
第三章、實驗方法與步驟…………………………………………………………………11
3.1 實驗流程………………………………………………………………………………11
3.2實驗前準備……………………………………………………………………………12
3.2.1 矽基板表面清潔…………………………………………………………………12
3.3反射陽極與電極製作…………………………………………………………………14
3.3.1金屬層蒸鍍步驟……………………………………………………………………14
3.4熱蒸鍍有機材料………………………………………………………………………16
3.4.1有機層蒸鍍步驟…………………………………………………………………… 16
3.4.2熱蒸鍍有基層材料選用…………………………………………………………… 19
3.5熱蒸鍍頂部半透明陰極金屬…………………………………………………………22
3.6元件蒸鍍圖案流程……………………………………………………………………23
3.7元件封裝………………………………………………………………………………24
3.8元件特性量測…………………………………………………………………………26
第四章、結果與討論………………………………………………………………………28
4.1調變元件陰極厚度對穿透性及導電性影響…………………………………………28
4.2調變反射陽極厚度對TEOLED於ITO之元件特性影響…………………………31
4.3在不同基板、底部陽極厚度對元件光電特性之影響……………………………… 36
4.4調變底部反射陽極材料對元件光電特性之影響…………………………………… 40
4.5比較Hole only及Electron only之電流密度-電壓特性曲線圖……………………44
4.6比較元件中TAPC、Alq3、TPBi三層厚度對元件特性影響………………………46
4.7調變發光層及電子傳輸層厚度對元件光電特性影響……………………………… 50
4.8調變電洞傳輸層對元件光電特性影響……………………………………………… 54
第五章、結論………………………………………………………………………………58
參考文獻……………………………………………………………………………………59
Extended Abstract……………………………………………………………………………61

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