臺灣博碩士論文加值系統

自供電感測器與傳統感測器相較之下，不受外部電源限制，具有更長的使用壽命，適用於各種環境和場合。本次研究為退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機(PENG)之自供電深紫外光感測器的製造和特性分析。

氧化鎵（Ga2O3）是一種超寬能隙半導體材料，它在深紫外區（200-400 nm）具有優異的吸收特性，使其成為紫外光感測器的理想材料。本研究的自供電感測元件下電極是在銅基板(Copper substrate)使用水熱法生長氧化鋅奈米柱，再利用射頻磁控濺鍍來濺鍍氧化鎵薄膜於氧化鋅奈米柱上，最後使用高溫退火爐進行高溫退火。Ga2O3薄膜分別在400℃、500℃、600℃和700℃下退火1小時。結果表示，退火溫度到達600℃，紫外光感測器的響應度越高。上電極的製作，使用自定義條狀圖型的遮罩覆蓋在塑膠基板(PET)，利用射頻磁控濺鍍來濺鍍銀薄膜作為上電極。

研究中使用自製敲擊系統驅動PENG，進行電流、電壓和光響應的量測，以利探討數據的變化。

實驗結果得知，製作的PENG在無照光以及254nm波長照射下，輸出電壓分別為154mV和246mV。在254nm波長照射下，輸出電壓上升了60%。代表我們所研發的自供電感測元件對於254nm波長具有出色的響應。

Compared to traditional sensors, self-powered sensors are not constrained by external power sources, offering a longer lifespan and suitability for various environments and applications. This study focuses on the fabrication and characterization of self-powered deep ultraviolet (DUV) photodetectors based on gallium oxide (Ga2O3) thin films/zinc oxide (ZnO) nanorod piezoelectric nanogenerators (PENG), with annealing temperature as the variable.

Gallium oxide (Ga2O3) is an ultra-wide bandgap semiconductor material that exhibits excellent absorption properties in the deep ultraviolet range (200-400 nm), making it an ideal material for ultraviolet photodetectors. In this study, the self-powered sensing device's bottom electrode is fabricated by growing zinc oxide nanorods on a copper substrate using a hydrothermal method, followed by RF magnetron sputtering to deposit a gallium oxide thin film onto the zinc oxide nanorods. Finally, high-temperature annealing is performed using a high-temperature annealing furnace. The Ga2O3 thin film is annealed at 400°C, 500°C, 600°C, and 700°C for 1 hour, respectively. The results indicate that when the annealing temperature reaches 600°C, the responsivity of the ultraviolet sensor increases. For the fabrication of the top electrode, a custom strip-patterned mask is used to cover a plastic substrate (PET), and silver thin film is sputtered using RF magnetron sputtering to serve as the top electrode.
 
A self-made tapping system was employed to drive the PENG for measuring current, voltage, and light response to investigate data variations.

Experimental results revealed that the fabricated PENG exhibited output voltages of 154mV and 246mV under no light and 254nm wavelength illumination, respectively, representing a 60% increase in output voltage under 254nm wavelength illumination. This indicates excellent responsiveness of the developed self-powered sensor to 254nm wavelength light.

摘要…i
Abstract…ii
誌謝…iv
目錄…v
表目錄…viii
圖目錄…x
第一章緒論…1
1.1 前言…1
1.2 研究動機與目的…1
第二章理論基礎與文獻探討…3
2.1 氧化鋅材料特性…3
2.1.1 氧化鋅的不同型態結構…5
2.1.2 氧化鋅的光學特性…5
2.2 氧化鎵材料特性…6
2.2.1 氧化鎵的材料特性…6
2.2.2 氧化鎵的晶體結構介紹…8
2.3 濺鍍原理…8
2.3.1 射頻濺鍍的優點…10
2.4 水熱法合成之氧化鋅奈米柱陣列…11
2.4.1 水熱法的優點…11
2.5 生長氧化鋅奈米柱陣列之化學反應流程…12
2.6 退火…13
2.6.1 退火的優點…13
2.7 雷射雕刻…14
2.8壓電效應…15
2.9氧化鋅奈米柱之壓電原理…15
2.10可調速敲擊系統…17
2.10.1 敲擊系統原理…17
2.10.2 敲擊系統的優點…17
2.11光響應度(Responsivity)…17
2.12紫外光感測原理…18
2.12.1氧化鋅(ZnO)紫外光感測原理…18
2.12.2氧化鎵(Ga2O3) 深紫外光感測原理…18
2.12.3退火後的深紫外光感測原理…19
2.13熱膨脹係數…19
第三章實驗步驟與機台介紹…20
3.1 實驗用品及器材介紹…20
3.2 實驗流程介紹…23
3.3基板的製備…24
3.4上電極製作介紹…25
3.5下電極製作介紹…26
3.5.1氧化鋅奈米柱陣列生長流程…26
3.5.2氧化鎵薄膜生長流程…26
3.6元件製作及特性量測介紹…27
3.7材料之特性分析…28
3.7.1場發射掃描式電子顯微鏡(Field-Emission Scanning Electron Microscope, FE-SEM)…28
3.7.2能量散射光譜儀(Energy Dispersive Spectrometry, EDS)…28
3.7.3高解析穿透電子顯微鏡(High-Resolution Transmission Electron Microscope, HR-TEM)…29
3.7.4X-光繞射分析儀(X-Ray Diffraction, XRD)…30
3.7.5光激發螢光光譜儀(PL)…31
第四章實驗內容與討論…32
4.1不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱之自供電深紫外光感測器製備…32
4.1.1氧化鎵薄膜/氧化鋅奈米柱陣列表面結構與形貌分析(SEM)…33
4.1.2氧化鎵薄膜/氧化鋅奈米柱陣列之晶相分析結晶性討論(XRD)…41
4.1.3 氧化鎵薄膜/氧化鋅奈米柱陣列之光激發螢光光譜儀(PL)…42
4.1.4 氧化鎵薄膜/氧化鋅奈米柱陣列之成份分析(EDS)…43
4.1.5 氧化鎵薄膜/氧化鋅奈米柱陣列之穿透式電子顯微鏡分析(TEM)…45
4.2 氧化鎵薄膜/氧化鋅奈米柱陣列之自供電深紫外光感測器量測分析…48
4.2.1 V-t特性量測分析…48
4.2.2 I-t特性量測分析…70
第五章結論…88
5.1結論…88
5.2未來展望…89
參考文獻…90
Extended Abstract…93

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