本研究以常壓電漿製程製備的氮化鉻薄膜。先將硝酸鉻、螯合劑與溶劑配製成溶膠前驅液，再以旋轉塗佈法將前驅液均勻塗佈於石英基板上並乾燥形成凝膠，之後再以常壓電漿以800-1100 W不同氣氛下處理10分鐘。試片經過1100 W氮氣(99.9%)電漿處理後，主要會生成Cr2O3及CrN的混合相；而在氮氣(99.995%)電漿處理10分鐘後，於會形成CrN薄膜，而在N2/H2=9電漿處理10分鐘後會形成Cr2N薄膜。再來去尋找最快生成之時間，氮氣(99.995%)電漿處理5分鐘即可形成CrN薄膜，而在N2/H2=9電漿處理3分鐘即可形成Cr2N薄膜。另外於氮氣(99.995%)氣氛下離電漿火炬5cm處也可以生成CrN薄膜，以及N2/H2=9氣氛下離電漿火炬5cm處也可以生成CrN+Cr2N兩種結晶相薄膜，在7cm處以生成CrN結晶相薄膜，在中心氣流比例850:150時，可以生成CrN+Cr2N兩種結晶相薄膜。經FE-SEM觀察於氮氣(99.995%)氣氛退火薄膜形成平整緻密的表面形貌，並有矩形顆粒生成；N2/H2=9退火薄膜可以觀察到有顆粒狀的形貌產生，以及破洞的表面但可以增加膜厚改善。經XPS分析以N2/H2=9氣氛退火10分鐘之薄膜，可以觀察到N-1s之峰值較N2/H2=9低，可能原因為轟擊距離近H離子解離後跟氮大量作用，轉變成NH與試片反應。經OES觀察在N2/H2=9的部分在336nm有NH的產生。以常壓電漿製備氮化鉻薄膜可大幅地降低處理時間及降低成本，因此具有快速製備薄膜之優點。

In this study, the chromium nitride thin films were prepared using atmospheric pressure plasma process. The chromium-containing precursor was coated on quartz substrate with a spin coater.The specimesns were annealed using atmospheric pressure plasma operating at 800-1100W with different operating parameters. The CrN and Cr2O3 phase were appeared at atmospheric pressure plasma with N2 (99.9%) at 1100W for 10 min. Additionally, the CrN was formed when the atmospheric pressure plasma with N2 (99.995%). The Cr2N phase was obtained as the atmospheric pressure plasma of N2/H2=9. The CrN was formed at atmospheric pressure plasma with N2 (99.995%) for 5 min and the Cr2N phase was formed at atmospheric pressure plasma of N2/H2=9 for 3 min. The CrN thin films can be obtained below bombardment distance of 5 cm under the atmospheric pressure plasma with N2 (99.995%). Moreover, the admixture of CrN and Cr2N phase were formed below the bombardment distance of 5 cm under the atmospheric pressure plasma of N2/H2=9,otherwise the CrN phase appeared at 7 cm. In axis stream atmosphere of 850:150，CrN and Cr2N can be formed. In FE-SEM analysis, thin films can be observed plane view was match and it has rectangle particles was formed in N2 (99.995%) atmosphere. In N2/H2=9 atmosphere can be observed plane view had hole and some particles. In xps analysis, thin films for 10 min in N2/H2=9 atmophere that can be observed its N-1s peak less then nitrogen atmosphere,maybe it too reach to let a large mount of H+ dissociation with N reaction,and NH was formed. In OES analysis, can be observed it have NH at 336 nm in N2/H2=9 atmosphere. The preparation of chromium nitride thin films with atmospheric plasma annealing can less more time and cost. Therefore have the advantage of rapid preparation of thin films.

摘要 I
Abstract II
致謝 IV
總目錄 V
表目錄 IX
圖目錄 XI
第 1 章 緒論 1
1.1 氮化物 1
1.2 溶膠-凝膠法 3
1.3 電漿簡介與原理 9
1.4 常壓電漿 11
1.5 研究動機/目的 16
第 2 章 文獻回顧 17
2.1 氮化鉻製備方法 17
2.2 薄膜製備方法 19
2.2.1 射頻濺鍍法 19
2.2.2 磁控濺鍍法 19
2.2.3 陰極真空電弧法 20
2.3 粉末製備方法 21
2.3.1 固體反應法 21
2.3.2 自傳播高溫合成法 22
2.4 常壓電漿氮化方法 22
2.4.1 氮化鐵 22
2.4.2 氮化鈦 23
第 3 章 實驗方法 25
3.1 實驗流程圖 25
3.2 前驅液製備 26
3.3 基材 26
3.4 鍍膜 26
3.5 常壓電漿處理 27
3.6 分析儀器及原理 31
3.6.1 高解析X光繞射儀（High Resolution X-ray Diffractometer） 31
3.6.2 場發射掃描式電子顯微鏡（Field Emission Scanning Electron Microscope, FE-SEM） 32
3.6.3 光學發射光譜儀(Optical Emission Spectroscopy, OES) 33
3.6.4 X光光電子能譜儀（X-ray photoelectron spectrometer, XPS） 35
第 4 章 結果與討論 38
4.1 常壓電漿退火溫度的關係 38
4.1.1 常壓電漿退火溫度與電漿操作瓦數的關係 38
4.1.2 常壓電漿退火溫度與轟擊距離的關係 43
4.2 凝膠試片製備與分析 51
4.3 X光繞射分析 52
4.3.1 不同電漿瓦數對氮化鉻薄膜的生長影響 52
4.3.2 不同電漿處理時間的影響 62
4.3.3 不同電漿轟擊距離之影響 69
4.3.4 不同電漿氣體成分之影響 78
4.4 電子顯微鏡分析 83
4.4.1 不同瓦數之表面形貌分析 83
4.4.2 不同轟擊時間之表面形貌分析 90
4.4.3 不同轟擊距離之表面形貌分析 95
4.4.4 不同氣體成分之表面形貌分析 102
4.5 XPS分析 106
4.6 電漿放射光譜檢測 110
4.6.1 不同氣氛下的放射光譜之檢測 113
第 5 章 結論 115
參考文獻 118
著作 121
簡歷 122

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