臺灣博碩士論文加值系統

本研究利用電漿化學氣象沉積系統將基板表面改質至超親水特性，使用旋轉塗佈法在表面改質後的基板製備單層聚苯乙烯奈米球陣列結構，再利用氧電漿蝕刻製程將奈米球尺寸縮小，並使用射頻磁控共濺鍍系統分別在未蝕刻以及蝕刻後之奈米球表面沉積厚度約200 nm之未摻雜氧化鋅薄膜，並利用快速熱退火系統在氮氣環境下進行700oC熱處理1分鐘，最後，再開發熱舉離製程，將試片浸泡丙酮溶液並適當進行震洗，以舉離方式得到不同氧化鋅奈米陣列結構。為了研究不同厚度氧化鋅對於奈米點陣列結構影響，使用射頻磁控共濺鍍系統在單層聚苯乙烯奈米球表面沉積不同厚度(100 nm及300 nm)的未摻雜氧化鋅薄膜，利用快速熱退火系統在氮氣環境下進行700oC熱處理1分鐘，再利用熱舉離製程，將試片浸泡丙酮溶液並適當進行震洗，以舉離方式得到氧化鋅奈米點陣列結構。研究透過原子粒顯微鏡(AFM)、霍爾量測、紫外光-可見光光譜儀、光激發螢光量測系統(PL)等儀器進行量測及分析表面形貌和光電特性。

In this study, a plasma chemical vapor deposition system was used to modify the substrate surface to super-hydrophilic properties, and a spin coating method was used to prepare a single-layer polystyrene nanosphere array structure on the surface-modified substrate, and then oxygen plasma etching was used The process reduces the size of the nanospheres, and uses a radio frequency magnetron co-sputtering system to deposit an undoped zinc oxide film with a thickness of about 200 nm on the surface of the unetched and etched nanospheres, and uses a rapid thermal annealing system in nitrogen. Heat treatment at 700oC for 1 minute was carried out in the environment. Finally, a thermal lift-off process was developed. The test piece was immersed in acetone solution and properly shocked, and different zinc oxide nanoarray structures were obtained by lift-off. In order to study the effect of different thicknesses of zinc oxide on the structure of nanodot arrays, a radio frequency magnetron co-sputtering system was used to deposit undoped zinc oxide films of different thicknesses (100 nm and 300 nm) on the surface of single-layer polystyrene nanospheres. Use a rapid thermal annealing system to perform heat treatment at 700oC for 1 minute in a nitrogen environment, and then use a thermal lift-off process to soak the test piece in an acetone solution and perform appropriate shock cleaning to obtain a zinc oxide nanodot array structure through lift-off. The research uses instruments such as atomic particle microscopy (AFM), Hall measurement, ultraviolet-visible light spectrometer, and photoluminescence measurement system (PL) to measure and analyze surface morphology and photoelectric properties.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vi
圖目錄...vii
第一章 緒論...1
1.2 文獻回顧...1
1.2.1 氧電漿表面改質...1
1.2.2 氧電漿蝕刻奈米球應用...1
1.2.3 傳統氧化鋅、粗糙化氧化鋅及結構化氧化鋅特性...2
第二章 理論基礎...7
2.1 電漿原理...7
2.2 氧電漿蝕刻奈米球之原理...7
2.3 射頻磁控濺鍍原理...8
2.4 薄膜成核理論...8
2.4氧化鋅薄膜簡介...9
第三章 實驗製程方法與步驟...13
3.1 實驗流程說明...13
3.2實驗系統...13
3.2.1 電漿增強化學氣相沉積系統...13
3.2.2 旋轉塗佈系統(Spin coating)...13
3.2.3 共濺鍍薄膜製作流程...13
3.3 實驗儀器量測原理...14
3.3.1 接觸角量測儀...14
3.3.2 表面輪廓分析儀...15
3.3.3 霍爾效應量測系統...15
3.3.4 原子力顯微鏡(Atomic force microscope；AFM)...15
3.3.5 光激發螢光量測系統...15
第四章 結果與討論...24
4-1氧化鋅薄膜沉積於單層陣列奈米球及其表面形貌和光電特性分析...24
4-1.1不同尺寸之奈米球陣列結構對於後續沉積氧化鋅表面形貌之影響...24
4-1.2不同大小奈米球對於氧化鋅奈米層光電特性分析...27
4-2以單層奈米球製備不同間距陣列結構氧化鋅奈米層薄膜特性分析...28
4-2.1不同大小奈米球對於陣列結構氧化鋅奈米層表面形貌之影響...29
4-2.2不同大小奈米球對於陣列結構氧化鋅奈米層光電特性分析...30
4-3不同厚度氧化鋅薄膜沉積於單層陣列奈米球及其表面形貌與光電特性分析...31
4-3.1不同厚度氧化鋅對於陣列結構氧化鋅奈米層表面形貌之影響...31
4-3.2不同厚度氧化鋅對於陣列結構氧化鋅奈米層光電特性之影響...34
第五章 結論與未來工作...58
參考文獻...60
Extended Abstract...62
Abstract...62

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