臺灣博碩士論文加值系統

在碳化矽 (β-SiC) 的化學機械拋光 (CMP) 過程中，最大化材料去除率 (MRR) 和提高表面質量是主要目標。 分子動力學 (MD) 作為一種強大的模擬工具揭示了具有某些運動機制的 β-SiC 襯底的材料去除行為。 本研究展示了單一和多粗糙模型的深度、磨料尺寸、拋光速度、振盪幅度和頻率的特徵。 滾動聯合振動運動在兩種模型中去除了最多的原子，但 MRR 的改善在滑動運動中最為顯著。 在單一和多重粗糙模型中，逆時針滾動運動產生最高的拋光後粗糙高度。 此外，與其他運動相比，這種順時針滾動和滑動運動的運動顯著改善了拋光後的凹凸高度。 此外，在兩種模型中，均方根 (RMS) 值在逆時針滾動運動中也最高。 然而，RMS 值的改善在這次運動中也很顯著，從一個增加到三個粗糙度。 相比之下，當從單個粗糙度增加到多個粗糙度時，提高 RMS 值的能力在滾動組合振動運動中達到最低值。 我們的研究結果通過檢查表面紋理和運動機制的影響，為基於 β-SiC 襯底的材料的消除特性提供了新的見解。

During the chemical mechanical polishing (CMP) of silicon carbide (β-SiC), maximizing the material removal rate (MRR) and improving surface quality are the primary objectives. Molecular dynamics (MD) as a powerful simulation tool revealed the material removal behaviours of β-SiC substrates with some movement mechanisms. This study presents features of depths, abrasive sizes, polishing velocities, oscillating amplitude and frequency with the single and multi-asperities model. The rolling combined vibration motion removes the most atoms in both models, but the improvement in MRR is most remarkable in the sliding motion. In single and multi-asperity models, the counterclockwise rolling motion produces the highest post-polishing asperity height. In addition, this movement with the clockwise rolling and sliding motion significantly improves asperity height after polishing compared to other movements. Furthermore, the root-mean-square (RMS) value was also highest in counterclockwise rolling motion in both models. However, RMS value improvement was also remarkable in this movement, increasing from one to three asperities. In contrast, the ability to improve RMS value reached the lowest value in rolling combined vibration motion when increasing from single to multi-asperities. Our findings offer fresh insights into elimination properties in materials based on β-SiC substrate by examining the impacts of surface textured and movement mechanisms.

摘要 i
Abstract ii
Acknowledgments iii
Contents iv
List of figure captions vi
List of table captions x
List of abbreviations and symbols xi
Chapter 1 INTRODUCTION 1
1.1 Overview. 1
1.2 Thesis objectives 2
1.3 Organization of the dissertation 2
Chapter 2 LITERATURE REVIEW 4
2.1 Chemical mechanical polishing (CMP) procedure 4
2.2 Material removal rate (MRR) 4
Chapter 3 SIMULATION METHOD 8
3.1 Physical model for nano-polishing process 8
3.2 Setting calculation parameters for nano-polishing 9
3.3 Interaction potential 10
3.4 Deformation distribution and temperature distribution in nano-polishing process 11
Chapter 4 RESULTS AND DISCUSSION 12
4.1 Effect of sliding process 12
4.1.1 Effect of polishing depths and tool radius on sliding process 15
4.1.2 Effect of sliding speed on sliding process 18
4.2 Effect of rolling process (Clockwise direction) 18
4.3 Effect of rolling process (Counterclockwise direction) 21
4.4 Effect of rolling process (Drilling direction) 24
4.5 Effect of vibration process (Vertical direction) 25
4.6 Effect of vibration process (Horizontal direction) 27
4.7 Effect of rolling combined vibration process 29
4.8 Comparison of motions influence on single-and multi-asperities systems. 31
4.8.1 Comparison of motions influence on single asperity systems. 31
4.8.2 Comparison of motions influence on multi-asperity systems. 33
4.8.3 Summary and comparison 34
Chapter 5 CONCLUSIONS AND FUTURE WORK 40
5.1 Conclusion 40
5.2 Future work 40
References 42
Curriculum vitae 50

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