臺灣博碩士論文加值系統

本文使用不同濃度的氫氧化鈉 濃度生長 不同的氧化鋅奈米柱，並且使用射頻濺射鍍膜系統進行上電極的製作，然後將上電極以及氧化鋅奈米柱結合為自供電氣體感測器，並且對其進行奈米柱的形貌分析、自供電元件特性分析、基板的撓曲元件耐用性進行測試，最後使用不同濃度的一氧化氮進行壓電量測並且比較自供電氣體感測器對於不同氣體濃度之電壓輸出效能。

實驗開始使用水熱法製備 氫氧化鈉調控之 氧化鋅奈米柱，後使用 雷射雕刻定義圖形，在透過濺鍍法於 ITO基板沉積銀薄膜備製電極，然後與氫氧化鈉調控之氧化鋅奈米柱組裝成奈米發電機，利用敲擊系統驅動 其奈米發電機，其中可以發現氫氧化鈉摻雜 0.040mol的氧化鋅奈米自供電元件的輸出電壓為最佳值 (1.87V)，且通入一氧化氮後的電壓提升至2.47V，可發現氫氧化鈉調控可提升氣體感測器之電壓。

第一部分：首先使用射頻磁控濺鍍機(Radio frequency magnetron sputtering)在玻璃基板上濺鍍 100nm氧化鋅薄膜作為晶種層 再利用水熱法配置 醋 酸鋅 (Zn(CH₃COO)₂)、 四氮六甲圜 (HMTA)以及不同 濃度 之 氫氧化鈉 (0、 20、 40、 60mM)，形成 氫氧化鈉調控之氧化鋅奈米柱 。 完成 後將 試片透過場發射掃描式電子顯微鏡 (FE-SEM)、能量散佈分析儀 (EDS)、穿透式電子顯微鏡 (TEM)、 X光繞射頻譜圖分析 (XRD)及螢光光譜儀 (PL)，進行生長結構、材料成分、晶格缺陷、結晶度以及光學等等分析。

第二部分：使用雷雕技術定義圖形，在ITO PET基板上定義電極區域，以 射頻磁控濺鍍儀器，濺鍍一層銀薄膜做為電極層， 然後與銀奈米粒子修飾氧化鋅奈米柱組裝成奈米發電機，利用新穎敲擊系統驅動自供電奈米發電機，並結合氣體之量測。

Different ZnO nanocolumns were produced based on the regulation of different concentrations of sodium hydroxide the RF sputtering coating system is used to make the upper electrode then, the upper electrode and ZnO nano column are combined to form a self powered gas sensor the morphology of the nano column, the characteristics of the self powered element and the durability of the flexure element of the substrate were tested finally, different concentrations of nitric oxide are used for piezoelectric measurement, and the voltage output efficiency of self powered gas sensor for different gas concentrations is compared.
The first part: first, 100 nm ZnO film was sputtered on glass substrate by radio frequency magnetron sputtering. Then, zincAcetate Dihydrate((Zn(CH₃COO)₂), hexamethylenetetramine (HMTA) and sodium hydroxide (0, 20, 40, 60mM) were prepared by hydrothermal method formation of zinc oxide nanocolumns regulated by sodium hydroxide. Finally,the samples were analyzed by field emission scanning electron microscope (FE-SEM), energy dispersive spectrometer (EDS), transmission electron microscope (TEM), X-ray diffraction (XRD) and fluorescence spectrometer (PL).
The second part: using the laser engraving technology to define the figure, defining the electrode area on the ITO PET substrate, the electrode layer is made of a silver film sputtered by RF magnetron sputtering instrument, and then assembling the nanogenerator with the silver nanoparticles modified zinc oxide nanorods, using a novel percussion system to drive the self-powered nanogenerator, and combining with the gas measurement.

摘要.......................................................................i
Abstract..................................................................ii
誌謝......................................................................iii
目錄......................................................................iv
表目錄....................................................................vi
圖目錄...................................................................vii
第一章緒論.................................................................1
1.1 前言 ................................................................................................................................. 1
1.2 研究動機與目的 ............................................................................................................. 2
第二章理論基礎與文獻探討.............3
2.1 氧化鋅之材料特性 ......................................................................................................... 3
2.1.1 氧化鋅不同型態的結構 ....................................................................................................... 4
2.1.1 氧化鋅之光學特性 ............................................................................................................... 5
2.2 濺鍍之原理 ..................................................................................................................... 6
2.2.1 射頻濺鍍的優點 ................................................................................................................... 9
2.3 水熱法合成氧化鋅奈米柱陣列 ................................................................................... 10
2.3.1 水熱法的優點 ..................................................................................................................... 10
2.4成長氧化鋅奈米柱陣列之化學反應流程 .................................................................... 10
2.5雷射雕刻技術 ................................................................................................................ 11
2.6 壓電效應的介紹 ........................................................................................................... 11
2.7壓電效應原理 ................................................................................................................ 12
2.8 精密敲擊系統 ............................................................................................................... 14
2-8-1 精密敲擊系統原理 ............................................................................................................ 14
2-8-2 精密敲擊系統的優點 ........................................................................................................ 14
第三章實驗步驟與機台介紹..............15
3.1 實驗機台與藥品 .................................................................................................................... 15
3.2 實驗架構 ....................................................................................................................... 17
3.3基板的準備 .................................................................................................................... 17
3.4晶種層與電極之濺鍍以及奈米柱之生長 .................................................................... 18
3.4.1使用RF sputter濺鍍氧化鋅晶種層 ................................................................................ 18
3.4.2將ZnO晶種層使用水熱法生長氫氧化鈉奈米柱 ............................................................. 18
3.4.3使用RF sputter濺鍍元件之上電極 ................................................................................ 18
3.5上電極之製作 ................................................................................................................ 20
3.6元件之製作 .................................................................................................................... 21
3.7材料特性之分析 ............................................................................................................ 22
3.7.1場發射掃描式電子顯微鏡（Field-Emission Scanning Electron Microscope,FE-SEM） ..............................................22
3.7.2能量散射光譜儀(Energy Dispersive Spectrometry, EDS) .................................................. 23
3.7.3透式電子顯微鏡(Transmission Electron Microscope,TEM) .............................................. 23
3.7.4X光繞射分析儀（X-Ray Diffraction, XRD） ................................................................... 24
3.7.5光激發螢光光譜儀(PL ........................................................................................................ 26
第四章實驗內容與討論 .................................................................................................................................................................................................................... 27
4-1氫氧化鈉調控氧化鋅奈米柱之製備 ............................................................................ 27
4-1-1氫氧化鈉調控氧化鋅奈米柱表面結構與形貌(SEM)....................................................... 28
4-1-2氫氧化鈉調控氧化鋅奈米柱之晶相分析結晶性討論(XRD) .......................................... 33
4-1-3氫氧化鈉調控氧化鋅奈米柱陣列之成分分析(EDS) ....................................................... 34
4-1-4 氫氧化鈉調控氧化鋅奈米柱之光激發螢光光譜儀(PL) ................................................. 36
4-1-5 氫氧化鈉調控氧化鋅奈米柱之穿透式電子顯微鏡分析(TEM) ..................................... 37
4-2 氫氧化鈉調控氧化鋅奈米柱陣列自供電氣體感測器量測分析 ............................... 41
4-2-1 V-t量測分析比較 ............................................................................................................... 41
第五章............................................................................................................................................................................................................................................................................ 50
5-1 結論 ............................................................................................................................... 50
5-2未來展望 ........................................................................................................................ 50
參考文獻.................................................................................................................................................................................................................................................................... 51

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