臺灣博碩士論文加值系統

本篇論文分成兩部分介紹，第一部分製備(1-x)TiO₂-xSrTiO₃陶瓷塊體材料樣品並量測各種摻雜濃度下之微波介電性質；第二部分製備(1-x)TiO₂-xSrTiO₃薄膜材料並量測在不同氣體濃度濺鍍下樣品之微波介電性質。
塊體樣品以固態反應法製備(1-x)TiO₂-xSrTiO₃，樣品煆燒溫度固定為1200℃，燒結溫度分為1200℃和1300℃，燒結時間為2小時。利用網路分析儀以微波柱狀共振技術量測樣品微波介電性質。對於燒結溫度在1200℃之樣品，樣品相對密度呈先上升後下降趨向；對於燒結溫度在1300℃之樣品，樣品相對密度呈先下降後上升趨向。在燒結溫度1300℃及摻雜x=0.075時則有最高之密度；而在燒結溫度1300℃及摻雜x=0.1時有最高介電係數，其介電係數和介電損耗為208和1.08*10⁻³。
薄膜樣品以反應性射頻磁控濺鍍法製備(1-x)TiO₂-xSrTiO₃(x=0.075)，薄膜材料為二氧化鈦(TiO₂)和鈦酸鍶(SrTiO₃)。在濺鍍時間、濺鍍功率、濺鍍壓力與玻璃基板加熱溫度相同下，僅改變氬氣(Ar)與氧氣(O₂)濃度來製備薄膜樣品，最後透過網路分析儀以共振腔擾動技術量測不同氣體濃度下樣品的微波介電性質。

The thesis is divided into two parts.The first part focuses on the preparation of (1-x)TiO₂-xSrTiO₃ bulk ceramic samples and analyze the microwave dielectric properties under various doping conditions. The second part involves the preparation of(1-x)TiO₂-xSrTiO₃ thin film materials and analyze the microwave dielectric properties under various gas concentrations during sputtering.
The bulk samples were prepared using the solid state reaction method. The samples were calcined at a fixed temperature of 1200℃, with sintering temperatures of 1200℃ and 1300℃, and a sintering time of 2 hours. Microwave dielectric properties of the samples were measured using a network analyzer with the microwave post resonance technology. At the temperature of 1200℃, the relative densities of the samples were initially increased followed by a decreasing trend. At 1300℃, the relative densities were an initially decreased followed by an increasing trend. The highest density was observed at the sintering temperature of 1300℃ with doping concentration of x=0.075. The highest dielectric constant was obtained at a sintering temperature of 1300℃ with doping concentration of x=0.1, with dielectric constant and dielectric loss of 208and 1.08x10⁻³.
Thin film samples of (1-x)TiO₂-xSrTiO₃(x=0.075) were prepared using the reactive radio frequency magnetron sputtering method, where the raw materials consisted of TiO₂ and SrTiO₃. Keeping the sputtering time, sputtering power, sputtering pressure, and glass substrate heating temperature constant, only the concentrations of Ar and O₂ were varied to prepare the films. Microwave dielectric properties of thin films were measured by the resonant cavity perturbation technique.

摘要... i
Abstract... ii
誌謝... iii
目錄... iv
表目錄... vi
圖目錄... vii
第一章 緒論... 1
1-1 前言... 1
1-2 研究背景與動機... 1
1-3 論文架構... 2
第二章 基礎理論... 3
2-1 介電理論... 3
2-1-1 介電損耗... 3
2-1-2 極化現象... 3
2-2 品質因數... 5
2-3 介電共振器... 6
2-4 介電共振模態與理論... 7
2-5 微波量測技術... 14
2-5-1 柱狀共振技術... 14
2-5-2 共振腔擾動技術... 16
2-6 塊體製作... 18
2-6-1 固態反應法... 18
2-6-2 固態反應法之優缺點... 19
2-7 燒結機構... 19
2-8 薄膜製作... 20
2-8-1 物理氣相沉積法優缺點... 20
2-8-2 化學氣相沉積法優缺點... 20
2-9 薄膜濺鍍... 21
2-9-1 電漿原理... 21
2-9-2 反應性射頻磁控濺鍍... 22
2-9-3 薄膜成長機制... 23
第三章 實驗方法... 25
3-1 陶瓷粉末介紹... 25
3-1-1 二氧化鈦... 25
3-1-2 摻雜材料(鈦酸鍶)... 30
3-2 (1-x)TiO₂-xSrTiO₃(x=0~0.1)塊體樣品製作... 31
3-2-1 塊體樣品實驗介紹... 31
3-2-2 塊體樣品製備流程... 31
3-2-3 塊體樣品介電量測分析... 31
3-3 (1-x)TiO₂-xSrTiO₃(x=0.075)薄膜樣品製作... 33
3-3-1 薄膜樣品實驗方法... 33
3-3-2 粉靶製作... 33
3-3-3 基板清洗方式... 34
3-3-4 薄膜沉積流程... 34
3-3-5 共振頻率定義... 36
3-3-6 薄膜樣品校正... 38
3-3-7 薄膜介電量測分析... 38
3-4 結構分析和特性量測方式... 38
3-4-1 密度與孔隙率量測... 38
3-4-2 網路分析儀... 40
3-4-3 X光繞射分析... 41
3-4-4 超高解析熱電子型場發射掃描式電子顯微鏡... 42
第四章 結果與討論... 43
4-1 燒結溫度不同之(1-x)TiO₂-xSrTiO₃(x=0~0.1)塊體特性影響... 43
4-1-1 XRD分析晶體結構和表面分析... 43
4-1-2 分析塊體相對密度和孔隙率... 45
4-1-3 分析塊體介電特性... 47
4-1-4 小結... 49
4-2 不同氣體比例在基板加熱對(1-x)TiO₂-xSrTiO₃(x=0.075)薄膜特性之影響... 49
4-2-1 XRD分析晶體結構和表面分析... 49
4-2-2 FE-SEM分析晶體結構和表面分析... 51
4-2-3 分析薄膜介電特性... 55
4-2-4 小結... 72
第五章 結論... 73
5-1 (1-x)TiO₂-xSrTiO₃(x=0~0.1)塊體樣品結論... 73
5-2 (1-x)TiO₂-xSrTiO₃(x=0.075)薄膜樣品結論... 73
參考文獻... 74

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