臺灣博碩士論文加值系統

本研究利用自製的常壓電漿系統成長氮化矽薄膜，分別以N2或N2/H2不同氣體源來分別做為矽和氮原料成長在矽基板上。對比不同的載台高度下觀察薄膜的生成，以場發射掃描式電子顯微鏡觀察其表面，3cm 的有發現顆粒與薄膜生成，5cm 無發現有顆粒或薄膜生成，調整電漿時間對比不同的管口距離，觀察薄膜狀況，以獲得最佳氮化矽薄膜的製備條件。

In this study, a self-made normal piezoelectric slurry system was used to grow tantalum nitride films, which were grown on a tantalum substrate using N2 or N2/H2 gas sources as niobium and nitrogen materials, respectively. The film formation was observed under different heights of the stage. The surface was observed by field emission scanning electron microscope. The particles and film were found in 3 cm. No particles or film were found in 5 cm. The plasma time was adjusted to compare the height of the stage. Film condition that obtains the optimum preparation conditions for the tantalum nitride film.

摘要 I
Abstract II
誌謝 III
總目錄 IV
表目錄 VI
圖目錄 VII
第1章 緒論 1
1.1 介電膜的發展 1
1.2 氮化矽結構及薄膜製備方法 3
1.3 電漿簡介與原理 5
1.4 常壓電漿介紹 6
1.5 研究動機與目的 8
第2章 文獻回顧 9
2.1 常壓化學氣相沉積法(APCVD) 9
2.2 低壓化學氣相沉積法(LPCVD) 10
2.3 電漿增強型化學氣相沉積法(PECVD) 11
第3章 實驗方法 12
3.1 實驗流程圖 13
3.2 常壓大氣電漿系統 14
3.3 常壓大氣電漿系統設計 15
3.4 常壓大氣電漿成長氮化矽薄膜 16
3.5 實驗測量設備 17
3.5.1 X光繞射分析儀(X-ray diffractometer，XRD) 17
3.5.2 場發射掃描式電子顯微鏡（Field Emission Scanning Electron Microscope，FE-SEM） 18
第4章 結果與討論 20
4.1 常壓電漿系統成長氮化矽薄膜 20
4.1.1 X-ray繞射分析 20
4.1.2 場發射掃描式電子顯微鏡分析 23
第5章 結論 26
第6章 參考文獻 27

[1]Chii-Wen Chen、Hsin-Cheng Lai、Ying-Da Chen、Hou-Jhih Huang、Yu-Ting Chen，The Investigation of Electrical Characteristics on Different Interfacial- Layer N-MOSFETs with High-k Dielectrics，p.11-17 Vol.35, No.2, Minghsin Journal, Aug. 2009
[2]Yu-Jung Lu，Nitride Semiconductor Based Plasmonic Nanolasers，National Tsing Hua University，Department of Physics，Department of Physics，2013
[3]J Z Jiang, F Kragh, D J Frost, K Ståhl and H Lindelov. Hardness and thermal stability of cubic silicon nitride. J. Phys.: Condens. Matter. 4 June 2001, 13 (22): 515. doi:10.1088/0953-8984/13/22/111.
[4]Comparison of vertical and horizontal tube furnaces in the semiconductor industry， 2009-06-06
[5]Jun-Rong Fu，Preparation of delafossite–CuFeO2 thin films using atmospheric pressure plasma post-annealing， National Kaohsiung University of Applied Sciences，Department of Chemical and Materials Engineering，Thesis，2014
[6]E. Gomez, D. A. Rani, C. R. Cheeseman, D. Deegan, M. Wise, A. R.
[7]Boccaccini, Journal of Hazardous Material 161(2009) 614-626
[8]羅彥翔、高偉誠、劉致勛、陳宸煒，高介電常數薄膜，義守大學電子工程學系，專題製作計畫書，2015
[9]L. Bárdos, H. Baránková, Thin Solid Films 518(2010) 6705-6713
[10]D. Merche, N. Vandencasteele, F. Reniers, Thin Solid Films 520 (2012) 4219- 4236
[11]Huang, Zhi-Kai，Fracture and Interfacial Properties Characterization of PECVD Silicon Nitride Films Subjected to Rapid Thermal Annealing and Mechanical Fatigue Loading Using Indentation Technique，National Cheng Kung University， Thesis，2011
[12]許正興，半導體製程技術，國立聯合大學電機工程學系
[13]陳許峻，以電漿輔助化學氣相沉積系統製備低溫氮化矽薄膜阻障層在塑膠基財之研究，私立中原大學化學工程學系，碩士學位論文，2008
[14]林家弘，以常壓式化學氣相沉積法成長氮化矽薄膜之特性研究，私立中原大學電子工程研究所，碩士學位論文，2007
[15]半導體製程中高介電（High K）材料的介紹(碩士論文),林煥祐,國立台灣大學化研所(2004)
[16]李世平，電漿化學氣相沉積技術成長超低應力之紫外光可透性氮化矽薄膜
[17]物理氣相沉積(PVD)介紹，奈米通訊，22 卷 No.4
[18]Xiang, Dong、Xia, Huanxiong、Yang, Wang、Mou, Peng, Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma- enhanced chemical vapor deposition, July 2019
[19]Guha, Spandan、Das, Soham、Bandyopadhyay, Asish、Das, Santanu、Swain, Bibhu P., Investigation of mechanical properties of CVD grown titanium silicon nitride thin films under reduced atmosphere., Jan2018
[20]Guha, Spandan、Das, Soham、Bandyopadhyay, Asish、Das, Santanu、Swain, Bibhu P., Investigation of mechanical properties of CVD grown titanium silicon nitride thin films under reduced atmosphere., Jan2018
[21]ARNETT、YUN、BH, SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES, APPLIED PHYSICS LETTERS Volume: 26 Issue: 3 Pages: 94-96, 94-96, Published: 1975
[22]Hicham Charifi、Abdelilah Slaoui、Jean Paul Stoquert、Hassan Chaib、Abdelkrim Hannour, Opto-Structural Properties of Silicon Nitride Thin Films Deposited by ECR-PECVD, 2016
[23]Rodríguez-Gómez, A.、Moreno-Rios, M.、García-García, R.、Reyes-Gasga, J.、Pérez-Martínez, A.L., Role of the substrate on the growth of silicon quantum dots embedded in silicon nitride thin films, 1 April 2018
[24]Volpi, F.、Braccini, M.、Devos, A.、Raymond, G.、Pasturel, A.、Morin, P., Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films., 2014
[25]Wei Zhou、Jinling Yang、Yan Li、An Ji、Fuhua Yang, Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test, 2008
[26]K.B. Hyun, C.C. Hee, K.T. Wook, P.N. Man, S.G. Yong and P.S. Ju, Appl. Phys. Lett. 86 (2005) 091908.
[27]P. Mach,S.J.Rodriguez, R. Nortrup, P. Wiltzius, and J.A. Rogers.
[28]L.D. Nergo, J.H. Yi, L.C. Kimerling, S. Hamel, A. Williamson and G. Galli, Appl. Phys. Lett. 88 (2006) 183103.
[29]A. Barnabé, E. Mugnier, L. Presmanes, Ph. Tailhades, Material Letters 60 (2006) 3468-3470
[30]E. Mugnier, A. Barnabé, L. Presmanes, Ph. Tailhades, Thin Solid Films 516 (2008) 1453-1456
[31]D. H. Choi, S. J. Moon, J. S. Hong, S. Y. An, I. -B. Shim, C. S. Kim, Thin Solid Films 517 (2009) 3987-989.
[32]L. Zhang, P. Li, K. Huang, Z. Tang, G. Liu, Y. Li, Material Letters 65 (2011) 3289-3291
[33]H. Y. Chen, J. H. Wu, Applied Surface Science 258 (2012) 4844-4847
[34]S. Z. Li, J. Liu, X. Z. Wang, B. W. Yan, H. Li, J. -M. Liu, Physica B 407 (2012) 2412-2415
[35]G. G. Read, Y. Park, K. S. Choi, The Physical Chemistry Letters, 3 (2012) 1872- 1876
[36]R. K. Gupta, M. Cavas, A. A. Al-Ghamdi, Z. H. Gafer, F. El-Tantawy, F. Yakuphanoglu, Solar Energy 92 (2013) 1–6
[37]Z. Deng, X. Fang, S. Wu, Y. Zhao, W. Dong, J. Shao, S. Wang, Journal of Alloy and Compounds 577 (2013) 658-662
[38]J. Park, J. Oh, E. Gil, G. Y. Yeom, Material Research Bulletin 47 (2012) 3011- 3014
[39]H. Y. Chen, W. J. Yang, K. P. Chang, Applied Surface Science 258 (2012) 8775- 8779
[40]Y. S. Lin, D. J. Lin, P. J. Sung, S. W. Tien, Thin Solid Films 532 (2013) 36-43
[41]S. T. Lien, J. Z. Chen, Y. J. Yang, C. C. Hsu, I. C. Cheng, Ceramics International 40 (2014) 2707–2715
[42]P. Zhao, W. Zheng, Y. D. Meng, M. Nagatsu, Journal of Applied Physics 113 (2013) 123301
[43]T. R. Zhao, M. Hasegawa, H. Takei, J. Cryst. Growth 154 (1995) 322-328
[44]A. M. Sukeshini, H. Kobayashi, M. Tabuchi, H. Kageyama, Solid State Ionics 128 (2000) 33-41
[45]H. Y. Chen, J. H. Wu, Applied Surface Science 520 (2012) 5029- 5035
[46]S. P. Pavunny, A. Kumar, R. S. Katiyar, Journal of Applied Physics, 107 (2010) 013522
[47]P. Jiang, D. Prendergast, F. Borondics, S. Porsgaard, L. Giovanetti, E. Pach, J. Newberg, H. Bluhm, F. Besenbacher, M. Salmeron, The Journal of Chemical Physics 138, 024704 (2013)
[48]H. Hiraga, T. Makino, T. Fukumura, H Weng, M. Kawasaki, Physical Review B 84 (2011) 041411