|
[1] P. Kosky, R. Balmer, W. Keat and G. Wise, Exploring Engineering, 3Rd Ed, chap. 8, Elsevier, Waltham, (2013).
[2] B. Brar, G. D. Wilk and A. C. Seabaugh, Direct extraction of the electron tunneling effective mass in ultrathin SiO2, Appl. Phys. Lett. 69 (1996) 2728–2830.
[3] B. Majkusiak, Gate tunnel current in an MOS transistor, IEEE Trans Electron Dev 37 (1990) 1087–1092.
[4] E. Miranda, E. O’Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O’Connell and P. K. Hurley, Degradation dynamics and breakdown of MgO gate oxides, Microelectronic Engineering 86 (2009) 1715–1717.
[5] H.J. Quah, K.Y. Cheong, Z. Hassan and Z. Lockman, Effect of postdeposition annealing in oxygen ambient on gallium-nitride-based mos capacitors with cerium oxide gate, IEEE Trans Electron Dev 58 (2011) 122–131.
[6] J. Robertson, High dielectric constant gate oxides for metal oxide Si transistors, Rep. Prog. Phys. 69 (2006) 327–396.
[7] J. Robertson, Band structures and band offsets of high K dielectrics on Si, Applied Surface Science 190 ¬(2002) 2–10.
[8] C.Y. Hsiao, J.C. Wu, H.T. Wu and C.F. Shih, Composite Mg2TiO4(111)/MgO (111) Gate Oxide on GaN (001), J. Am. Ceram. Soc. 95 (2012) 45–48.
[9] K.F. Albertin, M.A. Valle and I. Pereyra, Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric, Journal Integrated Circuits and Systems 2 (2007) 89–93.
[10] G.K. Dalapati, A. Sridhara, A.S. Weng Wong, C.K. Chia, S.J. Lee and D. Chi, Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p- GaAs, J. Appl. Phys. 103 (2008) 034508-1–5.
[11] I. Kim, J. Koo, J. Lee and H. Jeon, A Comparison of Al2O3/HfO2 and Al2O3/ZrO2 Bilayers Deposited by the Atomic Layer Deposition Method for Potential Gate Dielectric Applications, The Japan Society of Applied Physics 45 (2006) 915–925.
[12] C. Lee, C.S. Hwang and H.J. Kim, Comparison of the Electrical Properties of High-k Gate Dielectric (HfO2 and Al2O3) Films with Pt or n+-Polycrystalline-Silicon Gate, Integrated Ferroelectrics 67 (2004) 49–57.
[13] C.W. Yang, Y.K. Fang, C.H. Chen, W.D. Wang, T.Y. Lin, M.F. Wang, T.H. Hou, J.Y. Cheng, L.G. Yao, S.C. Chen, C.H. Yu and M.S. Liang, Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with Al2O3 capping layer, Electronics Letters 38 (2002) 1223–1225.
[14] S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3Rd Ed, chap. 4, Wiley, New York, (2006).
[15] A. Vinod, M.S. Rathore and N.S. Rao, Effects of annealing on quality and stoichiometry of HfO2 thin films grown by RF magnetron sputtering, Vacuum 155 (2018) 339–344.
[16] D.R. Lamb, Electrical Conduction Mechanism in Thin Insulating Films, Methuen, London, (1967).
[17] F.C. Chiu, A Review on Conduction Mechanisms in Dielectric Films, Advances in Materials Science and Engineering, 2014 (2014) 1–18.
[18] E. Castanier and C. Noguera, Oxygen vacancies on MgO(100), Surface Science 364 (1996) 1–16.
[19] A. Fujishima, T.N. Rao and D.A. Tryk, Titanium dioxide photocatalysis, Journal of Photochemistry and Photobiology C: Photochemistry Reviews 1 (2000) 1–21.
[20] M.K. Nowotny, T. Bak, J. Nowotny and C.C. Sorrell, Titanium vacancies in nonstoichiometric TiO2 single crystal. Phys. Status Solidi B 242 (2005) R88–R90.
[21] X. Pan, M.Q. Yang, X. Fu, N. Zhang and Y.J. Xu, Defective TiO2 with oxygen vacancies: synthesis, properties and photocatalytic applications, Nanoscale 5 (2013) 3601–3614.
[22] E. Scorza, U. Birkenheuer and C. Pisani, The oxygen vacancy at the surface and in bulk MgO: An embedded-cluster study, J. Chem. Phys. 107 (1997) 9645–9658.
[23] A.M. Ferrari and G. Pacchioni, Electronic Structure of F and V Centers on the MgO Surface, J. Phys. Chem, 99 (1995) 17010–17018.
[24] A. Gibson and R. Haydock, Stability of vacancy defects in MgO: The role of charge neutrality, Physical Review B 50 (1994) 2582–2592.
[25] H.J. Quah, K.Y. Cheong, Z. Hassan and Z. Lockman, Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate, IEEE Transactions On Electron Devices 58 (2011) 122–2131.
[26] H. Shinriki, M. Nakata, Y. Nishioka and K. Mukai, Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta2O5 film, IEEE Trans. Electron Device Lett. 10 (1989) 514.
[27] S. Kamiyama, T. Saeki , H. Mori and Y. Numasawa, Highly reliable 2.5 nm Ta2O5 capacitor process technology for 256 Mbit DRAMs, IEDM Tech. Dig. (1991) 827–832.
[28] D. Liu and J. Robertson, Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La addition, Appl. Phys. Lett. 94 (2009) 042904.
[29] K. Xiong and J. Robertson, Defect energy levels in HfO2 high-dielectric-constant gate oxide, Applied Physics Letters, 87 (2005) 183505.
[30] E.H. Nicollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley & Sons, New York, 1982. Ch. 7.
[31] K. Iniewski, A. Balasinski, Bogdan Majkusiak, Romuald B. Beck and A. Jakubowsi, Series resistance in a MOS capacitor with a thin gate oxide, Solid-State Electronics 32 (1989) 137–140.
[32] T. Homma, Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections, Materials Science and Engineering R23 (1998) 243-285.
[33] M. Mallak, M. Bockmeyer and P. Löbmann, Liquid phase deposition of TiO2 on glass: Systematic comparison to films prepared by sol–gel processing, Thin Solid Films 515 (2007) 8072–8077.
[34] I. Jogi, K. Kukli, J. Aarik, A. Aidl and J. Lu, Precursor-dependent structural and electrical characteristics of atomic layer deposited films: Case study on titanium oxide, Materials Science in Semiconductor Processing 9 (2006) 1084–1089.
[35] C.Y. Su, M. Frederickx, M. Menghini, L. Dillemans, R. Lieten, T. Smets, J.W. Seo and J.P. Locquet, Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy, Thin Solid Films 520 (2012) 4508–4511.
[36] C.H. Ashok, K.R. Venkateswara and C.H. Shilpa Chakra, Synthesis and characterization of MgO/TiO2 nanocomposites, J. Nanomed Nanotechnol 6 (2015) 329.
[37] B.S. Sahu, J.K. Ahn, C.J. Xian, S.G. Yoon and P. Srivastava, Experimental investigation of interfacial and electrical properties of post-deposition annealed Bi2Mg2/3Nb4/3O7 (BMN) dielectric films on silicon, J. Phys. D: Appl. Phys. 41 (2008) 135311.
[38] C.Y. Su, M. Frederickx, M. Menghini, L. Dillemans, R. Lieten, T. Smets, J.W. Seo and J.P. Locquet, Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy, Thin Solid Films 520 (2012) 4508–4511.
[39] T. Nabatame, A. Ohi and T. Chikyow, Role of oxygen transfer for high-k/SiO2/Si stack structure on flatband voltage shift, ECS Transactions, 35 (2011) 403–416.
[40] P. Hirel, P. Carrez, E. Clouet and P. Cordier, The electric charge and climb of edge dislocations in perovskite oxides: The case of high-pressure MgSiO3 bridgmanite, Acta Materialia 106 (2016) 313–321.
[41] D.K. Schroder, Semiconductor Material and Device Characterization, Chap. 5, Wiley, New York, (1998).
[42] H.J. Quah and K.Y. Cheong, Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient, Materials Chemistry and Physics 130 (2011) 1007–1015.
[43] Y. Nishioka, E.F. da Silva, Y. Wang and T.P. Ma, Dramatic Improvement of Hot-Electron-Induced Interface Degradation in MOS Structures Containing F or Cl in SiO2, IEEE Electron Device Lett. 9 (1988) 38–40.
[44] M. Sometani, R. Hasunuma, M. Ogino, H. Kuribayashi, Y. Sugahara and K. Yamabe, Suppression of Leakage Current of Deposited SiO2 with Bandgap Increasing by High Temperature Annealing, ECS Transactions, 19 (2009) 403–413.
[45] R. Perera, A. Ikeda, R. Hattori and Y. Kuroki, Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation, Microelectronic Engineering 65 (2003) 357–370.
[46] D.S. Wuu, C.C. Lin, C.N. Chen, H.H. Lee and J.J. Huang, Properties of double-layer Al2O3/TiO2 antireflection coatings by liquid phase deposition, Thin Solid Films 584 (2015) 248–252.
[47] D.Y. Shin and K.N. Kim, Synthesis of MgO Thin Film Deposited on Soda Lime Glass by Sol-gel Process, Materials Science Forum 569 (2008) 61–64.
[48]F.C. Chiu, Interface characterization and carrier transportation in metal/HfO2/silicon structure, Journal of Applied Physics 100 (2006) 114102.
[49] L.H. Chong, K. Mallik, C.H. de Groot and R. Kersting, The structural and electrical properties of thermally grown TiO2 thin films, J. Phys.: Condens. Matter 18 (2006) 645–657.
[50] C. Jin, H. Lu, Y. Zhang, H. Guan, Z. Li and Y. Zhang, Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures, Thin Solid Films 619 (2016) 48–52.
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