鈣鈦礦因其具有良好的吸收係數、長載子壽命、低激子束縛能及高載子遷移率等優勢，被廣泛使用在太陽能電池上。傳統鈣鈦礦層之製程通常使用溶液法，但是溶液法的製程不僅對於環境條件要求很高，鈣鈦礦溶液及反溶劑的搭配也必須控制得當，製程繁瑣且一個環節出錯便會影響到整體的效率，因此本文決定使用固態法將鈣鈦礦層之製程簡化，並使用了有機、無機及無鉛之鈣鈦礦粉末進行實驗。本文使用固態法並經由儀器分析確認成功合成MAPbI3、CsPbI3、CsSnI3鈣鈦礦粉末，並且經由調控不同熱處理條件，將MAPbI3晶粒大小控制在65.8 ~ 113.7 nm、CsPbI3控制在56.1 ~ 177.2 nm，而CsSnI3控制在43.0 ~ 92.0 nm，未來可將此鈣鈦礦製程應用在太陽能電池、發光二極體、雷射或等光電元件。

As a result of its good absorption coefficient, long carrier lifetime, and low exciton binding energy, perovskites are used in solar cells in large quantities. Traditionally, perovskite layers have been manufactured through the solution method, which not only requires high environmental conditions, but also requires proper control of the blend of perovskite solution and anti-solvent. Manufacturing is a complex process and an error in one link will adversely affect the overall efficiency. Therefore, this paper decided to use the solid-state method to simplify the manufacturing process of the perovskite layer, and used organic, inorganic, and lead-free perovskite powders for experiments. In this paper, MAPbI3, CsPbI3, and CsSnI3 perovskite powders were successfully synthesized by solid-state method and instrumental analysis. The grain size of MAPbI3 was controlled by adjusting different heat treatment conditions to 65.8 ~ 113.7 nm, and that of CsPbI3 was controlled at 56.1 ~ 177.2 nm, and CsSnI3 at 43.0 ~ 92.0 nm. Eventually, this perovskite process may be applied to optoelectronic components such as solar cells, light-emitting diodes, or lasers.

摘要...i
Abstract...ii
誌謝...iv
目錄...v
表目錄...viii
圖目錄...ix
第一章 緒論...1
1.1 前言...1
1.2綠色能源...1
1.3風力能...1
1.4水力能...2
1.5生質能...3
1.6太陽能...4
1.7太陽能電池...4
1.7.1 第一代太陽能電池...5
1.7.2 第二代太陽能電池...5
1.7.3第三代太陽能電池...6
1.7.4染料敏化太陽能電池...7
1.7.5鈣鈦礦太陽能電池...8
1.8研究動機...8
第一章 理論基礎與文獻回顧...10
2.1染料敏化太陽能電池之結構...10
2.2染料敏化太陽能電池的基本工作原理...10
2.3染料敏化太陽能電池的光電特性...12
2.4鈣鈦礦...13
2.5鈣鈦礦太陽能電池結構...14
2.6溶液法...15
2.6.1一步驟溶液沉積法(One-step method)...15
2.6.2兩步驟溶液沉積法(Two-step method)...16
2.7謝樂方程式(Scherrer equation)...17
2.8文獻回顧...17
2.7儀器原理...41
2.7.1掃描式電子顯微鏡(Scanning electron microscope,SEM)...41
2.7.2 X光繞射儀(X-ray diffractometer)...42
2.7.3高溫箱型爐...42
2.7.4封樣機...43
2.7.5能量色散光譜儀(Energy-dispersive spectroscopy,EDS)...43
第三章 實驗方法與步驟...44
3.1 實驗材料...44
3.2 實驗流程圖...44
3.3 實驗步驟...45
3.4 實驗條件...45
3.4 實驗設備...46
第四章 實驗結果與討論...50
4.1 SEM表面形貌分析...50
4.1.1 MAPbI3...50
4.1.2 CsPbI3...52
4.1.3 CsSnI3...54
4.2 EDS化學組成分析...56
4.2.1 MAPbI3化學組成分析...56
4.2.2 CsPbI3化學組成分析...60
4.2.3 CsSnI3化學組成分析...65
4.3 XRD繞射圖譜分析...69
4.3.1 MAPbI3繞射圖譜分析...69
4.3.2 CsPbI3繞射圖譜分析...70
4.3.3 CsSnI3繞射圖譜分析...71
第五章 結論...74
參考文獻...75

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