臺灣博碩士論文加值系統

本研究將探討快速退火對鐵雙層膜與鐵鎳雙層膜的影響，將三種不同膜厚(20 nm、50 nm、100 nm)的鐵做為薄膜沉積於矽基板上，在三種不同溫度(0℃、350℃、450℃)下進行5分鐘的退火。快速退火誘使鐵薄膜表面團簇聚集與晶粒成長，隨後沉積三種不同膜厚(20 nm、50 nm、100 nm)的鐵與鎳薄膜。
實驗將通過SEM與AFM觀察其退火前後之表面形貌變化，使用EDS進行元素分析，並以XRD分析雙層膜之間的結晶性，此外，再通過四點探針量測薄膜退火後的影響，分析其I-V曲線與電阻在變電壓下的變化。
研究結果顯示，我們成功利用薄膜生長機制與快速退火製備出具有沙丘狀的表面結構，類似Skyrmions的半圓球顆粒，再蒸鍍上一層導電層，並觀察到電流通過表面時，電阻產生的非線性的變化。當電壓增加至一定值時，電阻會大幅上升，可能是因為薄膜中類似Skyrmions結構的顆粒與其複雜的磁性結構，造成電子的散射增加，使其電阻上升。本研究旨在提供快速退火對鐵和鐵鎳雙層膜的微觀結構和電學特性影響的見解。

This study explores the effects of rapid annealing on iron bilayers and iron-nickel bilayers. We deposited iron thin films of three different thicknesses (20 nm, 50 nm, 100 nm) on silicon wafer and annealed them at three different temperatures (0°C, 350°C, 450°C) for 5 minutes. Rapid annealing induced clustering and grain growth on the iron film surfaces, followed by the deposition thin films of iron and nickel of the three different thicknesses (20 nm, 50 nm, 100 nm).
We used SEM and AFM to observe surface morphology changes before and after annealing, conducted elemental analysis with EDS, and analyzed the crystallinity between bilayers using XRD. Additionally, we measured the thin films' electrical properties after annealing with four-point probe to analyze I-V curves and resistance changes under varying voltages.
The results showed that we successfully used the mechanism of thin film growth and rapid annealing to create a dune-like surface structure, similar to hemispherical particles of Skyrmions. After adding a conductive layer, we observed nonlinear resistance changes as current passed through the surface. When the voltage reached a certain level, the resistance increased significantly. This is likely due to increased electron scattering caused by the Skyrmion-like particles and their complex magnetic structures within the film. This study aims to provide insights into the effects of rapid annealing on the microstructure and electrical properties of iron and iron-nickel bilayers.

摘要.....i
Abstract.....ii
誌謝.....iii
目錄.....iv
表目錄.....vi
圖目錄.....vii
第一章 緒 論.....1
1.1 前言.....1
1.2 研究動機.....2
第二章 文獻探討.....3
2.1 非線性電阻.....3
2.1.1 磁阻效應.....4
2.1.2 常磁阻.....4
2.1.3 巨磁阻.....4
2.1.4 異向性磁阻.....5
2.2 Skyrmions.....6
2.2.1 Skyrmions.....6
2.2.2 Dzyaloshinskii-Moriya交互作用.....9
2.3 物理氣相沉積.....10
2.3.1 電子束蒸鍍.....10
2.3.2 薄膜沉積原理與模式.....11
2.4 快速退火.....12
2.5 電子平均自由路徑.....13
2.6 電致遷移.....15
2.7 四點探針.....17
2.8 蒸鍍靶材之性質.....18
2.8.1 鎳.....18
2.8.2 鐵.....18
2.8.3 鎳/鐵.....18
2.8.4 氧化鐵.....19
第三章 研究內容與方法.....20
3.1 實驗流程.....20
3.2 實驗設計與參數.....21
3.3 實驗設備.....23
3.3.1 電子束蒸鍍機.....23
3.3.2 快速退火爐.....24
3.4 分析儀器.....25
3.4.1 表面輪廓量測儀.....25
3.4.2 掃描式電子顯微鏡.....25
3.4.3 能量色散X射線光譜儀.....25
3.4.4 四點探針.....25
3.4.5 X光繞射儀.....25
3.4.6 原子力顯微鏡.....26
3.5 實驗材料.....27
第四章 結果與討論.....28
4.1 鐵與鎳薄膜之實際厚度.....28
4.2 不同膜厚鐵雙層膜與鐵鎳雙層膜退火前後表面形貌分析.....29
4.2.1 以SEM分析不同膜厚鐵雙層膜退火前後表面形貌分析.....29
4.2.2 以SEM分析不同膜厚鐵鎳雙層膜退火前後表面形貌分析.....32
4.2.3 以AFM分析鐵雙層膜與鐵鎳雙層膜退火後表面形貌分析.....35
4.3 鐵雙層膜及鐵鎳雙層膜退火前後之成分分析.....36
4.3.1 以EDS分析鐵雙層膜及鐵鎳雙層膜退火前後之元素成分.....36
4.3.2 以XRD分析鐵雙層膜及鐵鎳雙層膜退火前後之元素組成.....38
4.4 鐵雙層膜及鐵鎳雙層膜退火前後之電性分析.....42
4.4.1 鐵雙層膜於變電壓下的熱損傷.....43
4.4.2 鐵雙層膜之電性分析.....44
4.4.3 鐵鎳雙層膜之電性分析.....48
4.4.4 鐵與鐵鎳雙層膜退火前後電學性質趨勢分析.....52
第五章 結論.....58
參考文獻.....59
Extended Abstract.....63

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