臺灣博碩士論文加值系統

本論文提出兩種參考電壓電路，第一種電路為單端輸出參考電壓;第二種電路為差動輸出參考電壓。本論文提出之參考電壓電路，利用不同架構與製程參數可以形成許多不同型態的參考電壓電路，並根據結果找出哪一種型態電路的效能是最好的。第一種利用 MOSFET模組偏壓於弱反轉區產生的正溫度係數特性以及 MOSFET臨界電壓具有的負溫度係數特性產生；第二種則是利用BJT模組產生的正溫度係數特性以及BJT的基射極電壓的負溫度係數特性產生，以上兩種架構皆是將正負溫度係數以適當的權重比例組合來產生一個不隨溫度變化的零溫度係數參考電壓。相較於傳統的參考電壓電路，本論文提出之電路架構簡單，且不需使用運算放大器，所以使用的元件與晶片面積較小，可節省製造成本。

本論文提出之參考電壓電路使用TSMC 0.35微米以及TSMC 0.18微米製程參數進行佈局，並利用HSPICE和ADE(Analog Design Environment)兩種電路模擬軟體去進行佈局前/後模擬以及下線製作，佈局前/後模擬結果皆與設計理論推導一致，可證明電路的可行性。本論文提出之參考電壓電路可當作電路模組應用於各種類比、數位等積體電路設計之中。

In this thesis, two kind reference voltage circuits have been proposed. The first one is a single-ended output reference voltage and the second one is a differential output reference voltage. Different kind of reference voltage circuits can be formed by using different architectures and process parameters. According to the results, it can be found that which one will have the best performance. The first type uses the positive temperature-coefficient characteristics generated by the MOSFET module in the weak-inversion region and the negative temperature-coefficient characteristics is from the MOSFET threshold voltage. The second type uses the positive temperature-coefficient characteristics generated by the BJT module and the negative temperature-coefficient characteristic is from the base-emitter junction voltage. Both of the above two architectures combine the positive and negative temperature-coefficients with appropriate weight ratios to generate a zero temperature-coefficient reference voltage which does not change with temperature. Comparing with the traditional reference voltage circuit, the circuit structure proposed in this thesis is simple and does not need any operational amplifier, so the components and chip area used in these circuits are less than the traditional circuits, which will save manufacturing costs.

All of the reference voltage circuit proposed in this thesis use TSMC 0.35 μm and TSMC 0.18 μm process parameters for layout, and uses HSPICE and ADE (Analog Design Environment) simulation program to perform pre and post layout simulation and tape-out. Pre and post layout the simulation results are consistent with the derivation of the design theory, which can prove the feasibility of the circuit. The reference voltage circuit proposed in this thesis can be used as a circuit module in the design of various analog and digital integrated circuits.

摘要...i
Abstract...ii
誌謝...iv
目錄...v
表目錄...viii
圖目錄...ix
符號說明...xii
第一章 緒論...1
1.1 研究背景與動機...1
1.2 研究方向與重點...1
1.3 設計流程...1
1.4 論文架構...2
第二章 傳統參考電壓電路...3
2.1 傳統參考電壓電路...3
2.2 傳統參考電壓電路工作原理...3
2.3 啟動電路...4
2.4 BJT參考電壓電路架構...5
2.4.1負溫度係數特性...5
2.4.2正溫度係數特性...6
2.4.3 BJT參考電壓電路...7
2.5 MOSFET參考電壓電路架構...9
2.5.1弱反轉區與溫度係數特性...9
2.5.2 MOSFET參考電壓電路...11
第三章 單端輸出BiCMOS參考電壓設計實務...13
3.1 第一種單端輸出BiCMOS參考電壓電路...13
3.1.1 第一種單端輸出BiCMOS參考電壓電路分析...14
3.1.2 第一種單端輸出BiCMOS參考電壓電路模擬結果...16
3.1.3 第一種單端輸出BiCMOS參考電壓電路佈局圖...18
3.2 第二種單端輸出BiCMOS參考電壓電路...19
3.2.1 第二種單端輸出BiCMOS參考電壓電路分析...19
3.2.2 第二種單端輸出BiCMOS參考電壓電路模擬結果...21
3.2.3 第二種單端輸出BiCMOS參考電壓電路佈局圖...23
3.3 兩種單端輸出BiCMOS參考電壓電路模擬結果整理與討論...24
第四章 差動輸出BiCMOS參考電壓設計實務...25
4.1 傳統差動輸出參考電壓電路設計...25
4.2 第一種差動輸出BiCMOS參考電壓電路...27
4.2.1 第一種差動輸出BiCMOS參考電壓電路分析...27
4.2.2 第一種差動輸出BiCMOS參考電壓電路模擬結果...30
4.2.3 第一種差動輸出BiCMOS參考電壓電路佈局圖...32
4.3 第二種差動輸出BiCMOS參考電壓電路...33
4.3.1 第二種差動輸出BiCMOS參考電壓電路分析...33
4.3.2 第二種差動輸出BiCMOS參考電壓電路模擬結果...34
4.3.3 第二種差動輸出BiCMOS參考電壓電路佈局圖...36
4.4 第三種差動輸出BiCMOS參考電壓電路...37
4.4.1 第三種差動輸出BiCMOS參考電壓電路分析...37
4.4.2 第三種差動輸出BiCMOS參考電壓電路模擬結果...40
4.4.3 第三種差動輸出BiCMOS參考電壓電路佈局圖...42
4.5 第四種差動輸出BiCMOS參考電壓電路...43
4.5.1 第四種差動輸出BiCMOS參考電壓電路分析...43
4.5.2 第四種差動輸出BiCMOS參考電壓電路模擬結果...44
4.5.3 第四種差動輸出BiCMOS參考電壓電路佈局圖...46
4.6 四種差動輸出BiCMOS參考電壓電路模擬結果整理與討論...47
第五章 晶片實作與量測結果...48
5.1 全客製化IC設計流程...48
5.2 量測儀器與流程...49
5.3 第一種單端輸出BiCMOS參考電壓電路晶片實體與量測結果...50
5.3.1 晶片實體...50
5.3.2 晶片量測...51
5.4 第二種單端輸出BiCMOS參考電壓電路晶片實體與量測結果...53
5.4.1 晶片實體...53
5.4.2 晶片量測...54
5.5 第一種差動輸出BiCMOS參考電壓電路晶片實體與量測結果...56
5.5.1 晶片實體...56
5.5.2 晶片量測...57
5.6 第二種差動輸出BiCMOS參考電壓電路晶片實體與量測結果...59
5.6.1 晶片實體...59
5.6.2 晶片量測...60
5.7 第三種差動輸出BiCMOS參考電壓電路晶片實體與量測結果...62
5.7.1 晶片實體...62
5.7.2 晶片量測...63
5.8 第四種差動輸出BiCMOS參考電壓電路晶片實體與量測結果...65
5.8.1 晶片實體...65
5.8.2 晶片量測...66
第六章 結果與討論...70
參考文獻...71

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