本研究旨在提高半導體製程中離子佈植機水道設備的散熱效率，從而增進製程的穩定性與效率。為了達到這一目標，我們採用了有限元素法和最佳化設計。首先，我們利用有限元素法對水道結構進行了詳細的模擬分析，以評估方案的熱傳特性。透過模擬，我們能夠準確地瞭解水道內部的溫度分佈、熱流動情況以及熱傳導效率，進而識別出存在的散熱問題和潛在的改進空間。接下來，我們利用最佳化方法，尋求最佳的水道設計參數，以最大程度地提高散熱效率並降低能源消耗。通過將最佳化設計，我們能夠快速有效地搜索出最優解，從而實現對水道結構進行全面優化。研究結果顯示，通過最佳化水道設計，能夠顯著提升離子佈植機的散熱效率，有效降低系統的運行溫度，進而改善製程的穩定性和效率。此外，最佳化設計還能夠減少能源消耗，降低運行成本，具有經濟效益和環境效益的雙重優勢。總的來說，本研究的成果為半導體製程提供了重要的技術支持和參考依據，為推動半導體製程的進一步優化和提升提供了有力的技術保障。

The aim of this study is to enhance the heat dissipation efficiency of the ion implantation machine's water channel equipment in semiconductor manufacturing processes, thereby improving process stability and efficiency. To achieve this goal, we employed the finite element method and optimization design. Firstly, detailed simulation analysis of the water channel structure was conducted using the finite element method to evaluate the thermal characteristics of different schemes. Through simulations, we accurately understood the temperature distribution, heat flow, and thermal conduction efficiency inside the water channel, thereby identifying existing heat dissipation issues and potential improvement areas. Subsequently, we utilized optimization methods to seek the optimal parameters for water channel design, aiming to maximize heat dissipation efficiency and reduce energy consumption. Through optimization design, we were able to rapidly and effectively search for the optimal solution, achieving comprehensive optimization of the water channel structure. The results indicate that through optimized water channel design, significant improvement in heat dissipation efficiency of the ion implantation machine can be achieved, effectively reducing system operating temperature and enhancing process stability and efficiency. Additionally, the optimized design can reduce energy consumption, lowering operating costs, and offering dual economic and environmental benefits. In conclusion, the findings of this study provide crucial technical support and reference for semiconductor manufacturing processes, offering robust technical assurance for further optimization and enhancement of semiconductor manufacturing processes.

摘要.....i
Abstract.....ii
誌謝.....iv
目錄.....v
表目錄.....vii
圖目錄.....viii
第一章緒論.....1
1.1 研究背景與動機.....1
1.2 半導體製程離子佈植機原理.....2
1.2.1 離子佈植機製程流程.....3
1.2.2 冷卻水路.....3
1.2.3 異形水路.....4
第二章 文獻探討.....5
2.1 傳熱方式之介紹.....5
2.1.1 熱傳導.....5
2.1.2 熱對流.....5
2.2 冷卻水管之雷諾數介紹.....6
2.2.1 散熱設備.....7
2.3 傳統水路及異形水路優缺點.....8
2.4 異形水路之製造方法.....8
2.5 異形水路之類型和佈局.....9
2.5.1 螺旋形狀異形冷卻水道.....9
2.5.2 網狀狀異形水路.....9
2.6 離子佈植機.....10
2.7 六個標準差.....10
2.7.1 變異數分析(ANOVA).....11
2.7.2 殘差分析之診斷圖.....11
2.7.3 影響力分析.....12
第三章 設計流程與方法.....13
3.1 設計流程.....13
3.2 因子與水準之選擇.....14
3.2.1 異型水路之R1與R2半徑大小.....14
3.2.2 異型水路距離上下外部之尺寸(上下對稱).....15
3.2.3 異型水路距離左右外部之尺寸(左右對稱).....15
3.3 實驗設計(Design Of Experiments / DOE).....16
3.4 熱流分析.....17
3.4.1 模型與分析之基本假設.....17
3.4.2 網格品質與數量.....18
3.4.3 設備之材料性質.....19
3.4.4 熱流邊界條件設定.....19
第四章 結果與討論.....22
4.1 Ansys熱流分析之結果.....22
4.1.1 原始設計.....23
4.2 變異數分析(ANOVA).....24
4.3 殘差分析.....25
4.3.1 殘差之常態分配檢查.....25
4.3.2 殘差與預測值檢查.....26
4.3.3 殘差與實驗順序檢查.....27
4.3.4 預測值與實際值檢查.....28
4.3.5 Box-Cox轉換檢查.....29
4.3.6 殘差與因子檢查.....30
4.4 影響力分析.....33
4.4.1 LEVERAGE與實驗順序檢查.....33
4.4.2 DFFITS 與實驗順序檢查.....34
4.4.3 DFBETAS與實驗順序檢查.....35
4.4.4 Cook’s DISTANCE 與實驗順序檢查.....36
4.4.5 超出警戒線之資料點檢查.....36
4.5 最佳化之設計參數.....37
4.6 最佳化分析結果驗證.....42
4.7 原始水道設計與最佳化水道設計之鋁板溫度比較.....43
4.7.1 原始水道設計與最佳化水道設計之水道內溫度比較.....44
5 第五章 結論與未來展望.....45
5.1 結論.....45
5.2 未來展望.....45
參考文獻.....46
Extended Abstract.....47

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