臺灣博碩士論文加值系統

本研究以氧化鋅奈米柱狀結構製作出紫外光感測器元件為主題，以簡單且低成本之水熱法，對氧化鋅奈米結構進行摻雜不同濃度之鈷離子，探討如何成功製作穩定且特性良好之紫外光感測器元件，主要研究可分為兩部分：

第一部分：首先使用射頻磁控濺鍍機(Radio frequency magnetron sputtering)在玻璃基板上濺鍍100nm氧化鋅薄膜作為晶種層，再利用水熱法配置硝酸鋅(Zn(NO3)2‧6H2O)、四氮六甲圜(HMTA)以及不同濃度之硝酸鈷(Co(NO3)2‧6H2O)，生長鈷摻雜氧化鋅奈米結構，最後使用快速熱退火在500C下進行熱處理。將試片透過場發射掃描式電子顯微鏡(FE-SEM)、能量散佈分析儀(EDS)、穿透式電子顯微鏡(TEM)、X光繞射頻譜圖分析(XRD)及螢光光譜儀(PL)，進行生長結構、材料成分、晶格缺陷、結晶度以及光學等等分析。

第二部分：使用黃光微影技術，在玻璃基板上定義成長區域，以射頻磁控濺鍍儀器，濺鍍一層氧化鋅薄膜做為晶種層，並由水熱法進行特性較佳之成長條件，製備出一維(1D)奈米結構，藉由一維奈米結構之長寬比與大面積之吸附紫外光條件，來提升光感測器元件之響應。

本研究發現使用硝酸鋅及四氮六甲圜，濃度分別為0.05 M、0.025 M，而硝酸鈷濃度為10 mM，在溫度為95 oC，時間為3小時，成長出來之奈米柱結構最為優化，在紫外光照射下，具有良好之紫外光響應，靈敏度為89，光互斥比高達542。

n this study, ZnO nanostructures were doped with different concentrations of cobalt ions by a simple and low-cost hydrothermal method. We discuss how to successfully fabricate stable and well-characterized uv photodetectors. The main research can be divided into two parts:

The first part: First, use the radio frequency magnetron Sputtering 100nm zinc oxide thin film on glass substrate as seed layer, hydrothermal method was used to prepare zinc nitrate (Zn(NO3)2‧6H2O), hexamethylenetetramine (HMTA) and cobalt nitrate (Co(NO3)2‧6H2O) with different concentrations, and the nano structure of cobalt doped zinc oxide was grown. At last, rapid thermal annealing was used to heat treat at 500 ℃. The growth structure, material composition, lattice defects, crystallinity and optics were analyzed by field emission scanning electron microscope (FE-SEM), energy dispersive analyzer (EDS), transmission electron microscope (TEM), X-ray diffraction spectrum analysis (XRD) and fluorescence spectrometer (PL).

The second part: through photolithography technology, the definition of regional growth in the silicon substrate, instrument by RF sputtering, sputtering a layer of Zinc Oxide film as seed layer by hydrothermal method, and the growth characteristics of better conditions, preparation of one-dimensional (1D) nanostructures with one-dimensional nanostructures the ratio of length to width and large area of UV adsorption conditions, to improve the response of sensor element.

In this study, we found that zinc nitrate and hexamethylenetetramine were used at concentrations of 0.05 M and 0.025 M, while cobalt nitrate was 10 mm, at 95 ℃ and 3 hours, the growth of nanostructure was the most optimized, under UV irradiation, it has good UV response. Therefore, the analysis of cobalt doping has a far-reaching impact on the future components.

摘要...i
Abstract...ii
誌謝...iii
目錄...v
表目錄...vii
圖目錄...viii
第一章 緒論...1
1-1 研究背景...1
1-2 研究動機...1
1-3 文獻回顧...2
第二章 理論基礎與文獻探討...3
2-1 氧化鋅之材料特性...3
2-1-1 氧化鋅之光學特性...3
2-2 濺鍍之原理...4
2-3 水熱法合成氧化鋅奈米柱陣列...5
2-4 成長氧化鋅奈米柱陣列之化學反應流程...6
2-5 成長鈷摻雜氧化鋅奈米柱陣列之化學反應流程...6
2-6 光響應度(Responsivity)...7
2-7 內部增益( Internal gain )...8
第三章 實驗步驟及機台介紹...13
3-1 實驗機台與藥品...13
3-2 實驗架構...14
3-3 生長鈷摻雜氧化鋅奈米柱陣列...18
3-4 材料特性之分析...19
3-4-1 場發射掃描式電子顯微鏡（Field-Emission Scanning Electron Microscope,FE-SEM）...19
3-4-2 能量散射光譜儀(Energy Dispersive Spectrometry, EDS)...19
3-4-3 穿透式電子顯微鏡(Transmission Electron Microscope,TEM)...19
3-4-4 X光繞射分析儀（X-Ray Diffraction, XRD）...20
3-4-5 光激發螢光光譜儀(PL)...21
3-5 元件特性之分析...21
3-5-1 鈷摻雜氧化鋅奈米柱陣列之紫外光感測器製備...21
3-5-2 半導體分析儀(KEITHLEY 2400)...21
第四章 實驗結果與討論...25
4-1 鈷摻雜氧化鋅奈米柱之紫外光感測器製備...25
4-1-1 鈷摻雜氧化鋅奈米柱表面結構與形貌(SEM)...26
4-1-2 鈷摻雜氧化鋅奈米柱陣列之晶相分析結晶性討論(XRD)...32
4-1-3 鈷摻雜氧化鋅奈米柱陣列之成分分析(EDS)...34
4-1-4鈷摻雜氧化鋅奈米柱陣列之光激發螢光光譜儀(PL)...41
4-1-5鈷摻雜氧化鋅奈米柱陣列之穿透式電子顯微鏡分析(TEM)...42
4-2 鈷摻雜氧化鋅奈米柱陣列紫外光感測器量測分析...46
4-2-1 I-V量測分析比較...46
4-2-2 光響應(Responsivity) 量測分析...46
4-2-3 鈷摻雜氧化鋅奈米柱陣列UV週期性量測...46
第五章 結論與未來展望...54
5-1 結論...54
5-2 未來展望...54
參考文獻...55
Extended Abstract...58

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